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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Max Output Current | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Rep Pk Reverse Voltage-Max | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
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| TS25P05G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 25A | 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU802-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu801g-datasheets-5908.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBU802 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 200A | 1 | 8A | 200V | 10μA @ 200V | 1V @ 4A | 8A | ||||||||||||||||||||||||||||||||||||||||||
| TS25P04G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 400V | 10μA @ 400V | 1.1V @ 25A | 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU806-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu801g-datasheets-5908.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBU806 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 200A | 1 | 8A | 600V | 10μA @ 600V | 1V @ 4A | 8A | ||||||||||||||||||||||||||||||||||||||||||
| KBU1002G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu1005gt0-datasheets-5816.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 100V | 5μA @ 100V | 1.1V @ 10A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| G5SBA60-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-g5sba60m351-datasheets-0955.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 600V | 5μA @ 600V | 1.05V @ 3A | 2.8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU8G-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu8mm345-datasheets-0367.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 400V | 5μA @ 400V | 1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BU1008A-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1008 | 4 | Single | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3A | 1.1V | 90A | 5μA | ISOLATED | SILICON | 90A | 5μA | 800V | 90A | Single Phase | 10A | 1 | 3A | 5μA @ 800V | 1.1V @ 5A | ||||||||||||||||||||||||||||
| BU1510-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1506e345-datasheets-0177.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3.4A | 200A | 5μA | ISOLATED | SILICON | 1000V | 200A | 5μA | 1kV | Single Phase | 1 | 5μA @ 1000V | 1.05V @ 7.5A | |||||||||||||||||||||||||||||||||
| GBU408-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-gbu406g-datasheets-1204.pdf | 4-SIP, GBU | 12 Weeks | EAR99 | 8541.10.00.80 | NOT SPECIFIED | GBU408 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 150A | 4A | 800V | 10μA @ 800V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||
| DF10S | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-df04st-datasheets-9291.pdf | 1kV | 1A | 4-SMD, Gull Wing | 25pF | 8.51mm | 3.4mm | 6.5mm | Exempt | 4 | 9 Weeks | 299.00242mg | 4 | no | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | DUAL | 260 | DF10 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 1A | 1.1V | 50A | SILICON | 10μA | 1kV | 50A | Single Phase | 1 | 700V | 10μA @ 1000V | 1.1V @ 1A | ||||||||||||||||||||||||||
| TS25P02G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 100V | 10μA @ 100V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ2501-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-gbj2510bp-datasheets-0796.pdf | 4-SIP, GBJ | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | GBJ2501 | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 350A | 1 | 25A | 100V | 10μA @ 100V | 1.05V @ 12.5A | 25A | ||||||||||||||||||||||||||||||||||||
| GSIB640-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Wire | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-gsib660e345-datasheets-7707.pdf | 4-SIP, GSIB-5S | 30mm | 20mm | 4.6mm | 4 | 10 Weeks | No SVHC | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 6A | 6A | 950mV | 180A | 10μA | ISOLATED | SILICON | 180A | 10μA | 400V | 180A | Single Phase | 1 | 10μA @ 400V | 950mV @ 3A | 2.8A | |||||||||||||||||||||||||||||||
| GBU6G-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 175A | 6A | 400V | 5μA @ 400V | 1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||
| GSIB6A80-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gsib6a20e345-datasheets-1176.pdf | 4-SIP, GSIB-5S | 30mm | 20mm | 4.6mm | 4 | 7 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 2.8A | 1V | 150A | 10μA | ISOLATED | SILICON | 10μA | 800V | 150A | Single Phase | 1 | 10μA @ 800V | 1V @ 3A | ||||||||||||||||||||||||||||||||||||
| BU1010A-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-SIP, BU | 4 | 10 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 90A | 1 | 3A | 1kV | 5μA @ 1000V | 1.1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||||||||
| GBU8D-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu8mm345-datasheets-0367.pdf | 4-SIP, GBU | 13 Weeks | GBU | Single Phase | 200V | 5μA @ 200V | 1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| G5SBA80-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-g5sba60m351-datasheets-0955.pdf | 4-SIP, GBU | 13 Weeks | GBU | Single Phase | 800V | 5μA @ 800V | 1.05V @ 3A | 2.8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU404-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/comchiptechnology-gbu406g-datasheets-1204.pdf | 4-SIP, GBU | 12 Weeks | EAR99 | 8541.10.00.80 | NOT SPECIFIED | GBU404 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 150A | 4A | 400V | 10μA @ 400V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||
| TS40P05G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts40p05ghd2g-datasheets-9305.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 20A | 40A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU1007G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu1005gt0-datasheets-5816.pdf | 4-SIP, KBU | 4 | 5 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 1000V | Single Phase | 200A | 1 | 10A | 1kV | 5μA @ 1000V | 1.1V @ 10A | 10A | |||||||||||||||||||||||||||||||||||||||||||
| TS25P07G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 25A | 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU1001G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu1005gt0-datasheets-5816.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 50V | 5μA @ 50V | 1.1V @ 10A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS25P01G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 50V | 10μA @ 50V | 1.1V @ 25A | 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ2506G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-SIP, KBJ | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | NO | 4 | Bridge Rectifier Diodes | 25A | 350A | 5μA | 5A | 600V | Single Phase | 600V | 10μA @ 600V | 1.05V @ 12.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ3504TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 400V | 5μA @ 400V | 1.1V @ 35A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS25P06G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF1506S | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Bulk | 1 (Unlimited) | SMD/SMT | Standard | ROHS3 Compliant | 2012 | /files/diodesincorporated-df1504st-datasheets-9341.pdf | 4-SMD, Gull Wing | 8.51mm | 3.4mm | 6.5mm | 4 | 9 Weeks | 299.00242mg | 4 | no | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | DUAL | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 1.1V | 50A | SILICON | 10μA | 600V | 50A | Single Phase | 1 | 420V | 10μA @ 600V | 1.1V @ 1.5A | 1.5A | ||||||||||||||||||||||||||||||||
| GBU6B-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 175A | 6A | 100V | 5μA @ 100V | 1V @ 6A | 6A |
