Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Output Current | Forward Current | Forward Voltage | Max Voltage Rating (AC) | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Rep Pk Reverse Voltage-Max | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GBJ3508TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 800V | 5μA @ 800V | 1.1V @ 35A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GBU8KS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-gbu8ks-datasheets-1244.pdf | 4-SIP, GBU | 10 Weeks | 5.4g | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 200A | 800V | Single Phase | 5μA @ 800V | 1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TS25P01G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 50V | 10μA @ 50V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BR1010 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | 4-Square, BR-10 | 4 | 4 Weeks | 10 | PRODUCTION (Last Updated: 5 months ago) | yes | 16 | Straight | 250.25kV | 100mOhm | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-W4 | 3mm | 10A | 150A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 10A | 1kV | Single Phase | 1 | 1kV | 10μA @ 1000V | 1.1V @ 5A | ||||||||||||||||||||||||||||||||||||||||||||
BU10065S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | isoCink+™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1006 | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3.2A | 120A | 5μA | ISOLATED | SILICON | 120A | 5μA | 600V | Single Phase | 1 | 10μA @ 600V | 1.05V @ 5A | ||||||||||||||||||||||||||||||||||||||||
GBL08-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/comchiptechnology-gbl06g-datasheets-5076.pdf | 4-SIP, GBJ | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBL08 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 125A | 1 | 4A | 800V | 10μA @ 800V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||
KBP306G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 4-SIP, KBP | 15 Weeks | KBP | Single Phase | 600V | 5μA @ 600V | 1.1V @ 3A | 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GBJ1501-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-gbj1508bp-datasheets-7338.pdf | 4-SIP, GBJ | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | GBJ1501 | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 240A | 1 | 15A | 100V | 10μA @ 100V | 1.05V @ 7.5A | 15A | ||||||||||||||||||||||||||||||||||||||||||||
GBU4K-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu4bm351-datasheets-1039.pdf | 4-SIP, GBU | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 800V | Single Phase | 150A | 1 | 3A | 800V | 5μA @ 800V | 1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||
KBJ410G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-kbj406g-datasheets-9395.pdf | 4-SIP, KBJ | 25.2mm | 19.3mm | 9.7mm | 4 | 31 Weeks | 4 | no | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 4A | 1V | 120A | ISOLATED | SILICON | 5μA | 1kV | 120A | Single Phase | 1 | 4A | 700V | 5μA @ 1000V | 1V @ 2A | ||||||||||||||||||||||||||||||||||||||||
BR101 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-Square, BR-10 | 4 | 4 Weeks | 10 | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | NO | UPPER | WIRE | 4 | R-PUFM-W4 | 10A | 150A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 10A | 100V | Single Phase | 1 | 100V | 10μA @ 100V | 1.1V @ 5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
BU1010A5S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | Lead Free | 10 Weeks | 4 | Tin | BU1010 | Single | isoCINK+™ BU-5S | 3A | 880mV | 90A | 5μA | 90A | 5μA | 1kV | Single Phase | 10A | 1kV | 5μA @ 1000V | 1.1V @ 5A | 3A | |||||||||||||||||||||||||||||||||||||||||||||||
GBU4005-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/comchiptechnology-gbu406g-datasheets-1204.pdf | 4-SIP, GBU | 12 Weeks | EAR99 | 8541.10.00.80 | NOT SPECIFIED | GBU4005 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 150A | 4A | 50V | 10μA @ 50V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GSIB6A60-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gsib6a20e345-datasheets-1176.pdf | 4-SIP, GSIB-5S | 30mm | 20mm | 4.6mm | 4 | 7 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 2.8A | 150A | 10μA | ISOLATED | SILICON | 10μA | 600V | Single Phase | 1 | 600V | 10μA @ 600V | 1V @ 3A | |||||||||||||||||||||||||||||||||||||||||||||
BU1008A5S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1008 | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3A | 90A | 5μA | ISOLATED | SILICON | 90A | 5μA | 800V | Single Phase | 1 | 3A | 5μA @ 800V | 1.05V @ 5A | ||||||||||||||||||||||||||||||||||||||||
GBJ3502TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 200V | 5μA @ 200V | 1.1V @ 35A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BU1010-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 10 Weeks | 4 | Tin | BU1010 | Single | isoCINK+™ BU | 3.2A | 120A | 5μA | 120A | 5μA | 1kV | Single Phase | 1kV | 5μA @ 1000V | 1.05V @ 5A | 3.2A | ||||||||||||||||||||||||||||||||||||||||||||||||||
GBJ35005TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 50V | 5μA @ 50V | 1.1V @ 35A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GBJ3501TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 100V | 5μA @ 100V | 1.1V @ 35A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GBU8G-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu8mm345-datasheets-0367.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 400V | 5μA @ 400V | 1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BR102 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 4-Square, BR-10 | 4 | 4 Weeks | 10 | PRODUCTION (Last Updated: 5 months ago) | yes | 12 | Straight | 100mOhm | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-W4 | 3mm | 10A | 250V | 150A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 10A | 200V | Single Phase | 1 | 200V | 10μA @ 200V | 1.1V @ 5A | |||||||||||||||||||||||||||||||||||||||||||||
DF1504S | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Bulk | 1 (Unlimited) | SMD/SMT | Standard | ROHS3 Compliant | 2012 | /files/diodesincorporated-df1504st-datasheets-9341.pdf | 4-SMD, Gull Wing | 8.51mm | 3.4mm | 6.5mm | 4 | 9 Weeks | 299.00242mg | 4 | no | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | DUAL | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 1.1V | 50A | SILICON | 10μA | 400V | 50A | Single Phase | 1 | 280V | 10μA @ 400V | 1.1V @ 1.5A | 1.5A | ||||||||||||||||||||||||||||||||||||||||
BU1010A-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1010 | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3A | 880mV | 90A | 5μA | ISOLATED | SILICON | 1000V | 90A | 5μA | 1kV | Single Phase | 10A | 1 | 3A | 5μA @ 1000V | 1.1V @ 5A | ||||||||||||||||||||||||||||||||||||
BU1008A-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-SIP, BU | 4 | 10 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 90A | 1 | 3A | 800V | 5μA @ 800V | 1.1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||
BR104 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2016 | 4-Square, BR-10 | 4 | 4 Weeks | 10 | PRODUCTION (Last Updated: 6 months ago) | yes | NO | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-W4 | 10A | 150A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 10A | 400V | Single Phase | 1 | 400V | 10μA @ 400V | 1.1V @ 5A | ||||||||||||||||||||||||||||||||||||||||||||||||||
BU1006A-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-SIP, BU | 4 | 10 Weeks | 4 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | 1.1V | SILICON | 90A | Single Phase | 1 | 3A | 600V | 10μA @ 600V | 1.1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||
BU1210-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu1206e345-datasheets-9901.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3.4A | 1.05V | 150A | 5μA | ISOLATED | SILICON | 150A | 5μA | 1kV | 150A | Single Phase | 1 | 5μA @ 1000V | 1.05V @ 6A | |||||||||||||||||||||||||||||||||||||||||
BU1006A-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1006 | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3A | 90A | 5μA | ISOLATED | SILICON | 90A | 5μA | 600V | Single Phase | 1 | 3A | 10μA @ 600V | 1.1V @ 5A | ||||||||||||||||||||||||||||||||||||||||
VS-2KBB80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | 2A | D | 17.5mm | 15mm | 6.5mm | 14 Weeks | Unknown | 4 | No | Single | 2A | 1.1V | 52A | 10μA | 800V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF06S | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-df04st-datasheets-9291.pdf | 600V | 1A | 4-SMD, Gull Wing | 25pF | 8.51mm | 3.4mm | 6.5mm | Exempt | 4 | 9 Weeks | 299.00242mg | 4 | no | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | DUAL | 260 | DF06 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 1A | 1.1V | 50A | SILICON | 10μA | 600V | 50A | Single Phase | 1 | 420V | 10μA @ 600V | 1.1V @ 1A |
Please send RFQ , we will respond immediately.