Products
Manufacturer
RFQ
NEWS
ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TS25P03G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 200V | 10μA @ 200V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GSIB15A40-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gsib15a60e345-datasheets-8227.pdf | 4-SIP, GSIB-5S | 30mm | 20mm | 4.6mm | 4 | 7 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 3.5A | 1V | 200A | 10μA | ISOLATED | SILICON | 10μA | 400V | 200A | Single Phase | 1 | 10μA @ 400V | 1V @ 7.5A | |||||||||||||||||||||||||||||
| TS25P04GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 400V | 10μA @ 400V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6A-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 175A | 6A | 50V | 5μA @ 50V | 1V @ 6A | 3.8A | |||||||||||||||||||||||||||||||||||||||||
| GBU810-G | Comchip Technology | $1.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu801g-datasheets-5908.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBU810 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 200A | 1 | 8A | 1kV | 10μA @ 1000V | 1V @ 4A | 8A | ||||||||||||||||||||||||||||||||||
| GBU601-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu6005g-datasheets-1436.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBU601 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 175A | 1 | 6A | 100V | 10μA @ 100V | 1V @ 3A | 6A | |||||||||||||||||||||||||||||||||||
| KBU3502-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbu3510g-datasheets-9733.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 400A | 1 | 35A | 200V | 10μA @ 200V | 1.1V @ 17.5A | 4.2A | |||||||||||||||||||||||||||||||||||
| DFB2010 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-dfb2080-datasheets-7235.pdf | 4-SIP, TS-6P | 4 | 11 Weeks | 7g | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | UL RECOGNIZED | No | e3 | Tin (Sn) | Single | 1 | Bridge Rectifier Diodes | 20A | 1.1V | 250A | ISOLATED | SILICON | 250A | 10μA | 100V | 250A | Single Phase | 1 | 70V | 10μA @ 50V | 1.1V @ 20A | |||||||||||||||||||||||||||||
| TS25P03GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 200V | 10μA @ 200V | 1.1V @ 25A | 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TS25P07GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DFB20100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-dfb2080-datasheets-7235.pdf | 4-SIP, TS-6P | 4 | 11 Weeks | 7g | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | UL RECOGNIZED | No | e3 | Tin (Sn) | Single | 1 | Bridge Rectifier Diodes | 20A | 1.1V | 250A | ISOLATED | SILICON | 250A | 10μA | 1kV | 250A | Single Phase | 1 | 10μA @ 50V | 1.1V @ 20A | ||||||||||||||||||||||||||||||
| GBU606-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu6005g-datasheets-1436.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBU606 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 175A | 1 | 6A | 600V | 10μA @ 600V | 1V @ 3A | 6A | |||||||||||||||||||||||||||||||||||
| TS25P01GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 50V | 10μA @ 50V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU602-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu6005g-datasheets-1436.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBU602 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 175A | 1 | 6A | 200V | 5μA @ 200V | 1V @ 3A | 6A | |||||||||||||||||||||||||||||||||||
| BU12065S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | isoCink+™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1206e345-datasheets-9901.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3.4A | 1.05V | 150A | 5μA | ISOLATED | SILICON | 150A | 5μA | 600V | 150A | Single Phase | 1 | 5μA @ 600V | 1.05V @ 6A | |||||||||||||||||||||||||
| TS40P06G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts40p05ghd2g-datasheets-9305.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 20A | 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TS25P02GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 100V | 10μA @ 100V | 1.1V @ 25A | 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TS25P06GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TS35P05G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts35p05gc2g-datasheets-5647.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 17.5A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS25P05GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 25A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TS35P06G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts35p05gc2g-datasheets-5647.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 17.5A | 35A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TS35P07G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts35p05gc2g-datasheets-5647.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 17.5A | 35A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU604-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-gbu6005g-datasheets-1436.pdf | 4-SIP, GBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NOT SPECIFIED | GBU604 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 175A | 1 | 6A | 400V | 10μA @ 400V | 1V @ 3A | 6A | |||||||||||||||||||||||||||||||||||
| DF1501S | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | Standard | ROHS3 Compliant | 2012 | /files/diodesincorporated-df1504st-datasheets-9341.pdf | 4-SMD, Gull Wing | 8.51mm | 3.4mm | 6.5mm | Lead Free | 4 | 9 Weeks | 299.00242mg | 4 | no | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | DUAL | 260 | DF1501 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 1.1V | 50A | SILICON | 10μA | 100V | 50A | Single Phase | 1.5A | 1 | 70V | 10μA @ 100V | 1.1V @ 1.5A | ||||||||||||||||||||||
| GBU8D-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-gbu8mm345-datasheets-0367.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 200V | 5μA @ 200V | 1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6C-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbu6me345-datasheets-7734.pdf | 4-SIP, GBU | 21 Weeks | 4 | GBU | Single Phase | 150V | 5μA @ 150V | 1V @ 6A | 3.8A | |||||||||||||||||||||||||||||||||||||||||||||||||
| TS25P07GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 25A | 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU8K-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu8mm345-datasheets-0367.pdf | 4-SIP, GBU | 8 Weeks | EAR99 | unknown | Single Phase | 800V | 5μA @ 800V | 1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||
| BU1006-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-SIP, BU | 4 | 10 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 120A | 1 | 3.2A | 600V | 5μA @ 600V | 1.05V @ 5A | 10A | |||||||||||||||||||||||||||||||||||
| TS25P03G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts25p05gd2g-datasheets-0979.pdf | 4-SIP, TS-6P | 6 Weeks | TS-6P | Single Phase | 200V | 10μA @ 200V | 1.1V @ 25A | 25A |
