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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIRA12DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-sira12dpt1ge3-datasheets-3022.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 4.3mOhm | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 4.5W | 1 | FET General Purpose Power | R-PDSO-C5 | 20 ns | 20 ns | 25 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 4.5W Ta 31W Tc | 30V | N-Channel | 2070pF @ 15V | 4.3m Ω @ 10A, 10V | 2.2V @ 250μA | 25A Tc | 45nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||
| SUD20N10-66L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/vishaysiliconix-sud20n1066lge3-datasheets-3204.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.1W Ta 41.7W Tc | TO-252AA | 16.9A | 25A | 0.066Ohm | 11.25 mJ | N-Channel | 860pF @ 50V | 66m Ω @ 6.6A, 10V | 3V @ 250μA | 16.9A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIRA24DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sira24dpt1ge3-datasheets-3329.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 5W | 150°C | 12 ns | 18 ns | 44.5A | 62.5W Tc | 25V | N-Channel | 2650pF @ 10V | 1.4m Ω @ 15A, 10V | 2.1V @ 250μA | 60A Tc | 26nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3458BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si3458bdvt1e3-datasheets-9757.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 100mOhm | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | FET General Purpose Power | 5 ns | 12ns | 10 ns | 18 ns | 3.2A | 20V | SILICON | SWITCHING | 3V | 2W Ta 3.3W Tc | 60V | N-Channel | 350pF @ 30V | 3 V | 100m Ω @ 3.2A, 10V | 3V @ 250μA | 4.1A Tc | 11nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI4174DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4174dyt1ge3-datasheets-3576.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 9.5MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 40 | 2.5W | 1 | 14 ns | 12ns | 9 ns | 19 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 2.5W Ta 5W Tc | 30V | N-Channel | 985pF @ 15V | 9.5m Ω @ 10A, 10V | 2.2V @ 250μA | 17A Tc | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4396DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4396dyt1ge3-datasheets-3616.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 30 | 1 | 12.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.1W Ta 5.4W Tc | 40A | 20 mJ | 30V | N-Channel | 1675pF @ 15V | 11.5m Ω @ 10A, 10V | 2.6V @ 250μA | 16A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIA414DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia414djt1ge3-datasheets-3718.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 11MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | FET General Purpose Power | S-XDSO-N3 | 12 ns | 10ns | 20 ns | 65 ns | 12A | 5V | SILICON | DRAIN | SWITCHING | 800mV | 3.5W Ta 19W Tc | 40A | 8V | N-Channel | 1800pF @ 4V | 800 mV | 11m Ω @ 9.7A, 4.5V | 800mV @ 250μA | 12A Tc | 32nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||
| SQJ416EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj416ept1ge3-datasheets-3783.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 100V | 45W Tc | N-Channel | 800pF @ 25V | 30mOhm @ 10A, 10V | 3.5V @ 250μA | 27A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA00EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja00ept1ge3-datasheets-3789.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 48W | 1 | 175°C | R-PSSO-G4 | 13 ns | 23 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W Tc | 25.6A | 84A | 26.5 mJ | 60V | N-Channel | 1700pF @ 25V | 13m Ω @ 10A, 10V | 3.5V @ 250μA | 30A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQ7415AENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sq7415aenwt1ge3-datasheets-3802.pdf | PowerPAK® 1212-8 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60V | 53W Tc | P-Channel | 1385pF @ 25V | 65m Ω @ 5.7A, 10V | 2.5V @ 250μA | 16A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4463CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4463cdyt1ge3-datasheets-3850.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 8mOhm | 8 | Tin | No | 1 | Single | 2.7W | 1 | 150°C | 8-SO | 12 ns | 10ns | 11 ns | 70 ns | -13.6A | 12V | 20V | -600mV | 2.7W Ta 5W Tc | 6mOhm | -20V | P-Channel | 4250pF @ 15V | 8mOhm @ 13A, 10V | 1.4V @ 250μA | 13.6A Ta 49A Tc | 162nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| SQJ464EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-sqj464ept1ge3-datasheets-3981.pdf | PowerPAK® SO-8 | Lead Free | 4 | 12 Weeks | EAR99 | unknown | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 45W Tc | 32A | 130A | 0.017Ohm | 31 mJ | N-Channel | 2086pF @ 30V | 17m Ω @ 7.1A, 10V | 2.5V @ 250μA | 32A Tc | 44nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 200mOhm | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 25W Tc | 27.4 mJ | 60V | N-Channel | 400pF @ 25V | 200m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||
| SQJ474EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj474ept1ge3-datasheets-3703.pdf | PowerPAK® SO-8 | Lead Free | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 45W Tc | 26A | 65A | 0.03Ohm | 24 mJ | N-Channel | 1100pF @ 25V | 30m Ω @ 10A, 10V | 2.5V @ 250μA | 26A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR420TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irfr420pbf-datasheets-7930.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 12 Weeks | 1.437803g | Unknown | 3Ohm | 3 | No | 24A | 500V | 1 | Single | 2.5W | 1 | D-Pak | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.4A | 20V | 500V | 4V | 2.5W Ta 42W Tc | 3Ohm | 500V | N-Channel | 360pF @ 25V | 2 V | 3Ohm @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 19nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR320TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfu320pbf-datasheets-8190.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.8Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 350pF | 10 ns | 14ns | 13 ns | 30 ns | 3.1A | 20V | 400V | 2V | 2.5W Ta 42W Tc | 1.8Ohm | N-Channel | 350pF @ 25V | 1.8Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFR024TRPBF | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu024pbf-datasheets-7718.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 100mOhm | 3 | Tin | No | 1 | Single | 2.5W | 1 | D-Pak | 640pF | 13 ns | 58ns | 42 ns | 25 ns | 14A | 20V | 60V | 4V | 2.5W Ta 42W Tc | 100mOhm | N-Channel | 640pF @ 25V | 2 V | 100mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 25nC @ 10V | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQ3460EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq3460evt1ge3-datasheets-4067.pdf | SOT-23-6 Thin, TSOT-23-6 | 14 Weeks | 6-TSOP | 20V | 3.6W Tc | N-Channel | 1060pF @ 10V | 30mOhm @ 5.1A, 4.5V | 1V @ 250μA | 8A Tc | 14nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4835DDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4835ddyt1ge3-datasheets-7773.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 18MOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | 44 ns | 100ns | 15 ns | 28 ns | -13A | 25V | SILICON | SWITCHING | 30V | -3V | 2.5W Ta 5.6W Tc | -30V | P-Channel | 1960pF @ 15V | 18m Ω @ 10A, 10V | 3V @ 250μA | 13A Tc | 65nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||
| SI4491EDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4491edyt1ge3-datasheets-4134.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 8 | EAR99 | No | DUAL | GULL WING | 1 | 17.3A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.1W Ta 6.9W Tc | MS-012AA | 0.0065Ohm | P-Channel | 4620pF @ 15V | 6.5m Ω @ 13A, 10V | 2.8V @ 250μA | 17.3A Ta | 153nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9024TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-Pak | 60V | 2.5W Ta 42W Tc | P-Channel | 570pF @ 25V | 280mOhm @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7309DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si7309dnt1ge3-datasheets-4775.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | Other Transistors | S-XDSO-C5 | 10 ns | 15ns | 33 ns | 30 ns | -8A | 20V | SILICON | DRAIN | SWITCHING | 60V | 3.2W Ta 19.8W Tc | 8A | 20A | -60V | P-Channel | 600pF @ 30V | 115m Ω @ 3.9A, 10V | 3V @ 250μA | 8A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI4894BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4894bdyt1e3-datasheets-3605.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.4W | 1 | FET General Purpose Powers | 13 ns | 10ns | 10 ns | 33 ns | 12A | 20V | SILICON | 3V | 1.4W Ta | 30V | N-Channel | 1580pF @ 15V | 11m Ω @ 12A, 10V | 3V @ 250μA | 8.9A Ta | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI4431CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4431cdyt1ge3-datasheets-8251.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 38 ns | 89ns | 11 ns | 22 ns | 7A | 20V | SILICON | SWITCHING | 30V | 30V | 4.2W Tc | 7A | 0.032Ohm | P-Channel | 1006pF @ 15V | 32m Ω @ 7A, 10V | 2.5V @ 250μA | 9A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQJ418EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj418ept1ge3-datasheets-4174.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 68W Tc | 48A | 160A | 0.014Ohm | 65 mJ | N-Channel | 1700pF @ 25V | 14m Ω @ 10A, 10V | 3.5V @ 250μA | 48A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9435BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si9435bdyt1e3-datasheets-9791.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 42mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 14 ns | 14ns | 14 ns | 42 ns | -4.1A | 20V | SILICON | 30V | 30V | -3V | 1.3W Ta | P-Channel | 42m Ω @ 5.7A, 10V | 3V @ 250μA | 4.1A Ta | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQJ454EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj454ept1ge3-datasheets-4637.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | 1 | 68W | 175°C | PowerPAK® SO-8 | 14 ns | 33 ns | 13A | 20V | 200V | 68W Tc | 118mOhm | 200V | N-Channel | 2600pF @ 25V | 145mOhm @ 7.5A, 10V | 2.5V @ 250μA | 13A Tc | 85nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3438DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3438dvt1e3-datasheets-2942.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | 35.5mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | FET General Purpose Power | 16 ns | 17ns | 10 ns | 16 ns | 5.5A | 20V | SILICON | SWITCHING | 2W Ta 3.5W Tc | 7.4A | 20A | 40V | N-Channel | 640pF @ 20V | 35.5m Ω @ 5A, 10V | 3V @ 250μA | 7.4A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI4628DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4628dyt1ge3-datasheets-4807.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 15 Weeks | 186.993455mg | No SVHC | 3mOhm | 8 | No | 1 | 7.8W | 1 | 8-SO | 3.45nF | 28 ns | 20ns | 13 ns | 39 ns | 38mA | 20V | 30V | 1V | 3.5W Ta 7.8W Tc | 2.4mOhm | N-Channel | 3450pF @ 15V | 3mOhm @ 20A, 10V | 2.5V @ 1mA | 38A Tc | 87nC @ 10V | 3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIR664DP-T1-GE3 | Vishay Siliconix | $3.34 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir664dpt1ge3-datasheets-4773.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 8 | EAR99 | Tin | No | 5W | DUAL | C BEND | Single | 5W | 1 | R-PDSO-C5 | 12ns | 7 ns | 24 ns | 60A | 20V | DRAIN | SWITCHING | 0.006Ohm | 20 mJ | 60V | N-Channel | 1750pF @ 30V | 6m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 40nC @ 10V |
