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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHH186N60EF-T1GE3 | Vishay Siliconix | $4.07 |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh186n60eft1ge3-datasheets-1744.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 114W Tc | N-Channel | 1081pF @ 100V | 193mOhm @ 9.5A, 10V | 5V @ 250μA | 16A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA105N60EF-GE3 | Vishay Siliconix | $2.79 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha105n60efge3-datasheets-1650.pdf | TO-220-3 Full Pack | TO-220 Full Pack | 600V | 35W Tc | N-Channel | 1804pF @ 100V | 102mOhm @ 13A, 10V | 5V @ 250μA | 29A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfbe20pbf-datasheets-1770.pdf | 800V | 1.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 6.5Ohm | 3 | Tin | No | 1 | Single | 54W | 1 | TO-220AB | 530pF | 8.2 ns | 17ns | 27 ns | 58 ns | 1.8A | 20V | 800V | 4V | 54W Tc | 6.5Ohm | 800V | N-Channel | 530pF @ 25V | 4 V | 6.5Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 38nC @ 10V | 6.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHD186N60EF-GE3 | Vishay Siliconix | $2.61 |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd186n60efge3-datasheets-1917.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 600V | 156W Tc | N-Channel | 1118pF @ 100V | 201mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP40012EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup40012elge3-datasheets-1932.pdf | TO-220-3 | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 40V | 150W Tc | N-Channel | 10930pF @ 20V | 1.79m Ω @ 30A, 10V | 2.5V @ 250μA | 150A Tc | 195nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG105N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg105n60efge3-datasheets-1831.pdf | TO-247-3 | TO-247AC | 600V | 208W Tc | N-Channel | 1804pF @ 100V | 102mOhm @ 13A, 10V | 5V @ 250μA | 29A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp22n60efge3-datasheets-1971.pdf | TO-220-3 | 21 Weeks | TO-220AB | 600V | 179W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48PBF | Vishay Siliconix | $1.99 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfz48pbf-datasheets-1974.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 11 Weeks | 6.000006g | 3 | No | 1 | Single | 190W | 1 | TO-220AB | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | 60V | 190W Tc | 18mOhm | 60V | N-Channel | 2400pF @ 25V | 4 V | 18mOhm @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFZ48RSPBF | Vishay Siliconix | $1.77 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz48rspbf-datasheets-1989.pdf | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.437803g | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | GULL WING | 260 | 4 | 1 | Single | 40 | 190W | 1 | R-PSSO-G2 | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 190W Tc | 290A | 60V | N-Channel | 2400pF @ 25V | 18m Ω @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHP052N60EF-GE3 | Vishay Siliconix | $5.94 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp052n60efge3-datasheets-1984.pdf | TO-220-3 | TO-220AB | 600V | 278W Tc | N-Channel | 3380pF @ 100V | 52mOhm @ 23A, 10V | 5V @ 250μA | 48A Tc | 101nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH125N60EF-T1GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh125n60eft1ge3-datasheets-1962.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 156W Tc | N-Channel | 1533pF @ 100V | 125mOhm @ 12A, 10V | 5V @ 250μA | 23A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60efge3-datasheets-1996.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | D2PAK (TO-263) | 600V | 179W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP186N60EF-GE3 | Vishay Siliconix | $3.05 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp186n60efge3-datasheets-2015.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 156W Tc | N-Channel | 1081pF @ 100V | 193mOhm @ 9.5A, 10V | 5V @ 250μA | 18A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP125N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp125n60efge3-datasheets-2031.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 179W Tc | N-Channel | 1533pF @ 100V | 125mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH070N60EF-T1GE3 | Vishay Siliconix | $6.46 |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh070n60eft1ge3-datasheets-2019.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 202W Tc | N-Channel | 2647pF @ 100V | 71mOhm @ 15A, 10V | 5V @ 250μA | 36A Tc | 75nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA22N60EF-GE3 | Vishay Siliconix | $2.86 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha22n60efge3-datasheets-2059.pdf | TO-220-3 Full Pack | 17 Weeks | TO-220 Full Pack | 600V | 33W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG052N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg052n60efge3-datasheets-2023.pdf | TO-247-3 | TO-247AC | 600V | 278W Tc | N-Channel | 3380pF @ 100V | 52mOhm @ 23A, 10V | 5V @ 250μA | 48A Tc | 101nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG21N80AE-GE3 | Vishay Siliconix | $3.69 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg21n80aege3-datasheets-2080.pdf | TO-247-3 | 14 Weeks | TO-247AC | 800V | 32W Tc | N-Channel | 1388pF @ 100V | 235mOhm @ 11A, 10V | 4V @ 250μA | 17.4A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA70EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja70ept1ge3-datasheets-2212.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 27W Tc | 14.7A | 18A | 0.208Ohm | 5 mJ | N-Channel | 220pF @ 25V | 95m Ω @ 4A, 10V | 3.5V @ 250μA | 14.7A Tc | 7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3427AEEV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq3427aeevt1ge3-datasheets-2238.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 12 Weeks | No SVHC | 6 | EAR99 | unknown | DUAL | GULL WING | 1 | 5W | 1 | 175°C | 8 ns | 24ns | 33 ns | 26 ns | -5.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | -2V | 5W Tc | 0.095Ohm | 75 pF | -60V | P-Channel | 1000pF @ 30V | 95m Ω @ 4.5A, 10V | 2.5V @ 250μA | 5.3A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIR484DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sir484dpt1ge3-datasheets-2155.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 15 Weeks | 506.605978mg | 8.3mOhm | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 12ns | 10 ns | 17 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.9W Ta 29.8W Tc | 50A | 24 mJ | 20V | N-Channel | 830pF @ 10V | 8.3m Ω @ 17.2A, 10V | 2.5V @ 250μA | 20A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIRA14DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira14dpt1ge3-datasheets-2376.pdf | PowerPAK® SO-8 | 5.969mm | 1.0668mm | 5.0038mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | DUAL | FLAT | 1 | Single | 3.6W | 1 | FET General Purpose Power | R-PDSO-F5 | 15 ns | 16 ns | 18 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 3.6W Ta 31.2W Tc | 30V | N-Channel | 1450pF @ 15V | 5.1m Ω @ 10A, 10V | 2.2V @ 250μA | 58A Tc | 29nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||
| SI3473CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3473cdvt1ge3-datasheets-5198.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 22MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | Other Transistors | 10 ns | 15ns | 35 ns | 62 ns | 8A | 8V | SILICON | SWITCHING | 12V | 4.2W Tc | 8A | -12V | P-Channel | 2010pF @ 6V | 22m Ω @ 8.1A, 4.5V | 1V @ 250μA | 8A Tc | 65nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SIHW21N80AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw21n80aege3-datasheets-2452.pdf | TO-247-3 | 14 Weeks | TO-247AD | 800V | 32W Tc | N-Channel | 1388pF @ 100V | 235mOhm @ 11A, 10V | 4V @ 250μA | 17.4A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4812BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4812bdyt1e3-datasheets-2638.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | Unknown | 16mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 1.4W | 1 | FET General Purpose Power | 15 ns | 13ns | 13 ns | 20 ns | 9.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 3V | 1.4W Ta | 7.3A | 30V | N-Channel | 3 V | 16m Ω @ 9.5A, 10V | 3V @ 250μA | 7.3A Ta | 13nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRLL014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irll014trpbf-datasheets-2710.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 3 | 8 Weeks | 250.212891mg | Unknown | 200mOhm | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | No | 2A | 55V | DUAL | GULL WING | 260 | 4 | 1 | 40 | 2W | 1 | R-PDSO-G3 | 9.3 ns | 110ns | 26 ns | 17 ns | 2.7A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2W Ta 3.1W Tc | 60V | N-Channel | 400pF @ 25V | 1 V | 200m Ω @ 1.6A, 5V | 2V @ 250μA | 2.7A Tc | 8.4nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||
| SI4134DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4134dyt1ge3-datasheets-8902.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 14 Weeks | 186.993455mg | 14mOhm | 8 | No | 1 | Single | 8-SO | 846pF | 9 ns | 9ns | 8 ns | 14 ns | 14A | 20V | 30V | 2.5W Ta 5W Tc | 14.5mOhm | 30V | N-Channel | 846pF @ 15V | 14mOhm @ 10A, 10V | 2.5V @ 250μA | 14A Tc | 23nC @ 10V | 14 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIS406DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis406dnt1ge3-datasheets-2843.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 20 ns | 12ns | 12 ns | 25 ns | 9A | 25V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 9A | 50A | 20 mJ | 30V | N-Channel | 1100pF @ 15V | 11m Ω @ 12A, 10V | 3V @ 250μA | 9A Ta | 28nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||
| SI4812BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4812bdyt1e3-datasheets-2638.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 13 Weeks | 186.993455mg | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 30 | 1.4W | 1 | FET General Purpose Power | 15 ns | 13ns | 8 ns | 20 ns | 7.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 1V | 1.4W Ta | N-Channel | 16m Ω @ 9.5A, 10V | 3V @ 250μA | 7.3A Ta | 13nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIR436DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir436dpt1ge3-datasheets-2797.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 22 ns | 11ns | 9 ns | 32 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 50W Tc | 25A | 0.0046Ohm | 25V | N-Channel | 1715pF @ 15V | 4.6m Ω @ 20A, 10V | 3V @ 250μA | 40A Tc | 47nC @ 10V | 4.5V 10V | ±20V |
