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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4866BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4866bdyt1ge3-datasheets-4881.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 186.993455mg | Unknown | 5.3mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 150°C | 13 ns | 12ns | 9 ns | 57 ns | 16.1A | 8V | SILICON | SWITCHING | 1V | 2.5W Ta 4.45W Tc | 12V | N-Channel | 5020pF @ 6V | 5.3m Ω @ 12A, 4.5V | 1V @ 250μA | 21.5A Tc | 80nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SQD10950E_GE3 | Vishay Siliconix | $1.26 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd10950ege3-datasheets-4870.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 250V | 62W Tc | N-Channel | 785pF @ 25V | 162mOhm @ 12A, 10V | 3.5V @ 250μA | 11.5A Tc | 16nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4636DY-T1-GE3 | Vishay Siliconix | $7.19 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4636dyt1ge3-datasheets-4992.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.5W | 1 | 32 ns | 87ns | 19 ns | 43 ns | 12.7A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 4.4W Tc | 60A | 20 mJ | 30V | N-Channel | 2635pF @ 15V | 8.5m Ω @ 10A, 10V | 2.5V @ 250μA | 17A Tc | 60nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| SQJ872EP-T1_GE3 | Vishay Siliconix | $1.16 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj872ept1ge3-datasheets-4995.pdf | 8-PowerTDFN | 12 Weeks | PowerPAK® SO-8 | 150V | 55W Tc | N-Channel | 1045pF @ 25V | 35.5mOhm @ 10A, 10V | 3.5V @ 250μA | 24.5A Tc | 22nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA90EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja90ept1ge3-datasheets-4914.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 68W | 1 | 175°C | R-PSSO-G4 | 16 ns | 26 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | 0.0076Ohm | 57 mJ | 80V | N-Channel | 3500pF @ 25V | 7.6m Ω @ 10A, 10V | 3.5V @ 250μA | 60A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SUD19P06-60-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sud19p0660ge3-datasheets-5898.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | 60mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 2.3W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 8 ns | 9ns | 30 ns | 65 ns | -18.3A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2.3W Ta 38.5W Tc | 24.2 mJ | -60V | P-Channel | 1710pF @ 25V | 60m Ω @ 10A, 10V | 3V @ 250μA | 18.3A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI4186DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4186dyt1ge3-datasheets-5077.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 540.001716mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3W | 1 | 29 ns | 16ns | 13 ns | 40 ns | 35.8A | 20V | SILICON | SWITCHING | 3W Ta 6W Tc | 25.3A | 0.0026Ohm | 20V | N-Channel | 3630pF @ 10V | 2.4 V | 2.6m Ω @ 15A, 10V | 2.4V @ 250μA | 35.8A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIRA06DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira06dpt1ge3-datasheets-5133.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | Lead Free | 14 Weeks | 506.605978mg | Unknown | 2.5mOhm | 8 | EAR99 | Tin | No | 260 | 1 | Single | 30 | 5W | 24 ns | 20 ns | 30 ns | 40A | 20V | 1.1V | 5W Ta 62.5W Tc | 30V | N-Channel | 3595pF @ 15V | 2.5m Ω @ 15A, 10V | 2.2V @ 250μA | 40A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR120TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfu120pbf-datasheets-9324.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 270mOhm | 3 | yes | EAR99 | AVALANCHE RATED | Tin | No | 77A | 100V | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | R-PSSO-G2 | 6.8 ns | 27ns | 17 ns | 18 ns | 7.7A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | TO-252AA | 100V | N-Channel | 360pF @ 25V | 2 V | 270m Ω @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| SI7121DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7121dnt1ge3-datasheets-5243.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | No SVHC | 18mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 44 ns | 100ns | 15 ns | 28 ns | -16A | 25V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | -3V | 3.7W Ta 52W Tc | 50A | 20 mJ | -30V | P-Channel | 1960pF @ 15V | -3 V | 18m Ω @ 10A, 10V | 3V @ 250μA | 16A Tc | 65nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||
| SQJ409EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj409ept1ge3-datasheets-5187.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 68W | 1 | 175°C | R-PSSO-G4 | 23 ns | 75 ns | -60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 68W Tc | 0.007Ohm | 84 mJ | -40V | P-Channel | 11000pF @ 25V | 7m Ω @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 260nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIR494DP-T1-GE3 | Vishay Siliconix | $6.30 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir494dpt1ge3-datasheets-5105.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | No | 1 | PowerPAK® SO-8 | 6.9nF | 42 ns | 60ns | 54 ns | 54 ns | 60A | 20V | 12V | 6.25W Ta 104W Tc | 1mOhm | 12V | N-Channel | 6900pF @ 6V | 1.2mOhm @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 150nC @ 10V | 1.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIR698DP-T1-GE3 | Vishay Siliconix | $5.02 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir698dpt1ge3-datasheets-5366.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.7W | 1 | R-PDSO-C5 | 7 ns | 11ns | 11 ns | 8 ns | 7.5A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 3.7W Ta 23W Tc | 100V | N-Channel | 210pF @ 50V | 195m Ω @ 2.5A, 10V | 3.5V @ 250μA | 7.5A Tc | 8nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI4378DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4378dyt1ge3-datasheets-6038.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | Unknown | 2.7mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.6W | 1 | FET General Purpose Powers | 85 ns | 65ns | 65 ns | 140 ns | 25A | 12V | SILICON | SWITCHING | 600mV | 1.6W Ta | 20V | N-Channel | 8500pF @ 10V | 600 mV | 2.7m Ω @ 25A, 4.5V | 1.8V @ 250μA | 19A Ta | 55nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||
| SI7465DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7465dpt1e3-datasheets-7224.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 64MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | R-XDSO-C5 | 8 ns | 9ns | 9 ns | 65 ns | -5A | 20V | SILICON | DRAIN | 60V | -3V | 1.5W Ta | 3.2A | 25A | 24.2 mJ | -60V | P-Channel | -3 V | 64m Ω @ 5A, 10V | 3V @ 250μA | 3.2A Ta | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| SIRA04DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira04dpt1ge3-datasheets-5425.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.15mOhm | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 5W | 1 | R-PDSO-C5 | 24 ns | 16 ns | 30 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 5W Ta 62.5W Tc | 20 mJ | 30V | N-Channel | 3595pF @ 15V | 1.1 V | 2.15m Ω @ 15A, 10V | 2.2V @ 250μA | 40A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||
| IRFR224TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.1Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | 250V | 4V | 2.5W Ta 42W Tc | 1.1Ohm | N-Channel | 260pF @ 25V | 2 V | 1.1Ohm @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFR110TRLPBF | Vishay Siliconix | $5.72 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr110trpbf-datasheets-0113.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.3A | 20V | 100V | 25W Tc | 540mOhm | N-Channel | 180pF @ 25V | 540mOhm @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SQR70090ELR_GE3 | Vishay Siliconix | $2.99 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqr70090elrge3-datasheets-5889.pdf | TO-252-4, DPak (3 Leads + Tab) | 3 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 1 | R-PSSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 136W Tc | 86A | 150A | 0.0087Ohm | 101 mJ | N-Channel | 3500pF @ 25V | 8.7m Ω @ 25A, 10V | 2.5V @ 250μA | 86A Tc | 65nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4477DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4477dyt1ge3-datasheets-5940.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 8 | EAR99 | Tin | No | DUAL | GULL WING | 8 | 1 | 3W | 1 | 42 ns | 42ns | 42 ns | 100 ns | -26.6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | -1.5V | 3W Ta 6.6W Tc | 0.0062Ohm | -20V | P-Channel | 4600pF @ 10V | 6.2m Ω @ 18A, 4.5V | 1.5V @ 250μA | 26.6A Tc | 190nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| IRFR1N60ATRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 7Ohm | 3 | Tin | No | 1 | Single | 36W | 1 | D-Pak | 229pF | 9.8 ns | 14ns | 20 ns | 18 ns | 1.4A | 30V | 600V | 36W Tc | 7Ohm | N-Channel | 229pF @ 25V | 7Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 7 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIJ420DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sij420dpt1ge3-datasheets-6040.pdf | PowerPAK® SO-8 | 4 | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 8 | 1 | 40 | 4.8W | 1 | R-PSSO-G4 | 29 ns | 16ns | 13 ns | 40 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.2V | 4.8W Ta 62.5W Tc | 32A | 0.0026Ohm | 45 mJ | N-Channel | 3630pF @ 10V | 1.2 V | 2.6m Ω @ 15A, 10V | 2.4V @ 250μA | 50A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4166DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4166dyt1ge3-datasheets-6071.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 3.9MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 3W | 1 | 30 ns | 19ns | 15 ns | 35 ns | 20.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.2V | 3W Ta 6.5W Tc | 30V | N-Channel | 2730pF @ 15V | 3.9m Ω @ 15A, 10V | 2.4V @ 250μA | 30.5A Tc | 65nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIR166DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sir166dpt1ge3-datasheets-6062.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 4MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 28 ns | 21ns | 16 ns | 44 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5W Ta 48W Tc | 70A | 30V | N-Channel | 3340pF @ 15V | 1.2 V | 3.2m Ω @ 15A, 10V | 2.2V @ 250μA | 40A Tc | 77nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SISS26DN-T1-GE3 | Vishay Siliconix | $1.27 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss26dnt1ge3-datasheets-6162.pdf | PowerPAK® 1212-8S | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60V | 57W Tc | N-Channel | 1710pF @ 30V | 4.5m Ω @ 15A, 10V | 3.6V @ 250μA | 60A Tc | 37nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7892BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7892bdpt1ge3-datasheets-7461.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 4.2mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.8W | 1 | FET General Purpose Powers | R-XDSO-C5 | 20 ns | 20ns | 35 ns | 62 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 1.8W Ta | 60A | N-Channel | 3775pF @ 15V | 1 V | 4.2m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| IRF510STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf510spbf-datasheets-1259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 540mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 43W Tc | 540mOhm | N-Channel | 180pF @ 25V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SQD97N06-6M3L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqr97n066m3lge3-datasheets-3737.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 97A | 60V | 136W Tc | N-Channel | 6060pF @ 25V | 6.3m Ω @ 25A, 10V | 2.5V @ 250μA | 97A Tc | 125nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL510STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl510strlpbf-datasheets-6331.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 250pF | 9.3 ns | 47ns | 18 ns | 16 ns | 5.6A | 10V | 100V | 3.7W Ta 43W Tc | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 3.4A, 5V | 2V @ 250μA | 5.6A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| SQD50N05-11L_GE3 | Vishay Siliconix | $8.86 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n0511lge3-datasheets-6346.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 1.437803g | Unknown | 11mOhm | 3 | No | 1 | Single | TO-252AA | 2.106nF | 8.5 ns | 11.5ns | 7.5 ns | 22.5 ns | 50A | 20V | 50V | 2V | 75W Tc | 9mOhm | N-Channel | 2106pF @ 25V | 11mOhm @ 45A, 10V | 2.5V @ 250μA | 50A Tc | 52nC @ 10V | 11 mΩ | 4.5V 10V | ±20V |
