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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIR846DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir846dpt1ge3-datasheets-8430.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.8mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 6.25W | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 18ns | 20 ns | 36 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 6.25W Ta 104W Tc | 20A | 100V | N-Channel | 2870pF @ 50V | 3.5 V | 7.8m Ω @ 20A, 10V | 3.5V @ 250μA | 60A Tc | 72nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIHG47N60AE-GE3 | Vishay Siliconix | $6.62 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg47n60aege3-datasheets-8468.pdf | TO-247-3 | 18 Weeks | 600V | 313W Tc | N-Channel | 3600pF @ 100V | 65m Ω @ 24A, 10V | 4V @ 250μA | 43A Tc | 182nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR668DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sir668dpt1re3-datasheets-8472.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 150°C | 17 ns | 30 ns | 23.2A | 20V | 104W Tc | 100V | N-Channel | 5400pF @ 50V | 4.8m Ω @ 20A, 10V | 3.4V @ 250μA | 95A Tc | 83nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLD014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irld014pbf-datasheets-8551.pdf | 60V | 1.7A | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 200mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 400pF | 9.3 ns | 110ns | 110 ns | 17 ns | 1.7A | 10V | 60V | 2V | 1.3W Ta | 130 ns | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 1A, 5V | 2V @ 250μA | 1.7A Ta | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| IRL530PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irl530pbf-datasheets-8562.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 160mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 930pF | 4.7 ns | 100ns | 48 ns | 22 ns | 15A | 10V | 100V | 2V | 88W Tc | 160mOhm | 100V | N-Channel | 930pF @ 25V | 1 V | 160mOhm @ 9A, 5V | 2V @ 250μA | 15A Tc | 28nC @ 5V | 160 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| IRF830PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf830pbf-datasheets-8583.pdf | 500V | 4.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 1.5Ohm | 3 | Tin | No | 1 | Single | 74W | 1 | TO-220AB | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | 500V | 4V | 74W Tc | 640 ns | 1.5Ohm | 500V | N-Channel | 610pF @ 25V | 4 V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF9Z34PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z34pbf-datasheets-8721.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 140mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 1.1nF | 18 ns | 120ns | 58 ns | 20 ns | 18A | 20V | 60V | -4V | 88W Tc | 140mOhm | P-Channel | 1100pF @ 25V | -4 V | 140mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 34nC @ 10V | 140 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF840LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irf840lcpbf-datasheets-8729.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 850mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 500V | 4V | 125W Tc | 740 ns | 850mOhm | 500V | N-Channel | 1100pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SQM40031EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqm40031elge3-datasheets-8739.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | 2 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-G2 | 21 ns | 250 ns | -120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 375W Tc | 300A | 0.003Ohm | -40V | P-Channel | 39000pF @ 25V | 3m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 800nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQM90142E_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sqm90142ege3-datasheets-8711.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | 2 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-G2 | 17 ns | 39 ns | 95A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 375W Tc | 205 mJ | 200V | N-Channel | 4200pF @ 25V | 15.3m Ω @ 20A, 10V | 3.5V @ 250μA | 95A Tc | 85nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840ASPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf840astrrpbf-datasheets-6542.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 850mOhm | 3 | 1 | Single | 3.1W | 1 | D2PAK | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 4V | 3.1W Ta 125W Tc | 850mOhm | N-Channel | 1018pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF740APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf740apbf-datasheets-8854.pdf | 400V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | No SVHC | 550mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.03nF | 10 ns | 35ns | 22 ns | 24 ns | 10A | 30V | 400V | 4V | 125W Tc | 550mOhm | 400V | N-Channel | 1030pF @ 25V | 4 V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIR882ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir882adpt1ge3-datasheets-8411.pdf | PowerPAK® SO-8 | Lead Free | 14 Weeks | 506.605978mg | Unknown | 8.7mOhm | 8 | No | 1 | Single | 5.4W | 1 | PowerPAK® SO-8 | 1.975nF | 11 ns | 12ns | 9 ns | 34 ns | 60A | 20V | 100V | 1.2V | 5.4W Ta 83W Tc | 7.2mOhm | N-Channel | 1975pF @ 50V | 8.7mOhm @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 60nC @ 10V | 8.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFP350PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp350pbf-datasheets-8897.pdf | 400V | 16A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | No SVHC | 300mOhm | 3 | Tin | 16A | 400V | 1 | Single | 190W | 1 | TO-247-3 | 2.6nF | 16 ns | 49ns | 47 ns | 87 ns | 16A | 20V | 400V | 4V | 190W Tc | 570 ns | 300mOhm | 400V | N-Channel | 2600pF @ 25V | 2 V | 300mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 150nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUG80050E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sug80050ege3-datasheets-8985.pdf | TO-247-3 | 25.11mm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 500W | 175°C | 18 ns | 72 ns | 100A | 20V | 500W Tc | 150V | N-Channel | 6250pF @ 75V | 5.4m Ω @ 20A, 10V | 4V @ 250μA | 100A Tc | 165nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP90P06-07L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp90p0607lge3-datasheets-9098.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 300W Tc | TO-220AB | 120A | 480A | 0.0067Ohm | 320 mJ | P-Channel | 14280pF @ 25V | 6.7m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 270nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP9240PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irfp9240pbf-datasheets-9137.pdf | -200V | -12A | TO-247-3 | 15.87mm | 25.11mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 500mOhm | 3 | Tin | No | 1 | Single | 150W | 1 | 150°C | TO-247-3 | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | -12A | 20V | -200V | 200V | -4V | 150W Tc | 300 ns | 500mOhm | -200V | P-Channel | 1200pF @ 25V | -4 V | 500mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SQM120P10_10M1LGE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120p1010m1lge3-datasheets-8835.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | 2 | 12 Weeks | 3 | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-G2 | 20 ns | 120 ns | -120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 375W Tc | 480A | -100V | P-Channel | 9000pF @ 25V | 10.1m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 190nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI8823EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si8823edbt2e1-datasheets-9323.pdf | 4-XFBGA | 30 Weeks | EAR99 | 20V | 900mW Tc | P-Channel | 580pF @ 10V | 95m Ω @ 1A, 4.5V | 800mV @ 250μA | 2.7A Tc | 10nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8821EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8821edbt2e1-datasheets-9398.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 30 Weeks | Unknown | 4 | yes | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | Single | 30 | 1 | 20ns | 15 ns | 40 ns | -2.3A | 12V | SILICON | SWITCHING | 30V | 30V | -600mV | 500mW Ta | 0.15Ohm | P-Channel | 440pF @ 15V | 135m Ω @ 1A, 4.5V | 1.3V @ 250μA | 17nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIA477EDJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia477edjtt1ge3-datasheets-9564.pdf | PowerPAK® SC-70-6 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 12V | 19W Tc | P-Channel | 3050pF @ 6V | 13m Ω @ 5A, 4.5V | 1V @ 250μA | 12A Tc | 50nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8424CDB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si8424cdbt1e1-datasheets-9622.pdf | 4-UFBGA, WLCSP | Lead Free | 4 | 21 Weeks | No SVHC | 20mOhm | 4 | EAR99 | Tin | No | BOTTOM | BALL | 1 | Single | 2.7W | 1 | FET General Purpose Power | 30 ns | 40ns | 40 ns | 150 ns | 10A | 5V | SILICON | SWITCHING | 8V | 8V | 800mV | 1.1W Ta 2.7W Tc | N-Channel | 2340pF @ 4V | 20m Ω @ 2A, 4.5V | 800mV @ 250μA | 40nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFI540GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfi540gpbf-datasheets-9758.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 77mOhm | 3 | No | 1 | Single | 48W | 1 | TO-220-3 | 1.7nF | 2.5kV | 11 ns | 44ns | 43 ns | 53 ns | 17A | 20V | 100V | 4V | 48W Tc | 77mOhm | N-Channel | 1700pF @ 25V | 4 V | 77mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 72nC @ 10V | 77 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI3493BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3493bdvt1e3-datasheets-9093.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 27.5mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2.08W | 1 | Other Transistors | 22 ns | 72ns | 84 ns | 75 ns | 7A | 8V | SILICON | SWITCHING | 20V | 2.08W Ta 2.97W Tc | 8A | -20V | P-Channel | 1805pF @ 10V | 27.5m Ω @ 7A, 4.5V | 900mV @ 250μA | 8A Tc | 43.5nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SQ4080EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq4080eyt1ge3-datasheets-0060.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 12 Weeks | unknown | YES | DUAL | GULL WING | 1 | 7.1W | 1 | 175°C | R-PDSO-G8 | 11.4 ns | 19.1 ns | 18A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 7.1W Tc | 0.085Ohm | 55 pF | 150V | N-Channel | 1590pF @ 75V | 85m Ω @ 10A, 10V | 4V @ 250μA | 18A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS40DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siss40dnt1ge3-datasheets-0129.pdf | PowerPAK® 1212-8S | 5 | 14 Weeks | 8 | EAR99 | No | DUAL | 1 | Single | 3.7W | 1 | S-PDSO-N5 | 14 ns | 5ns | 5 ns | 14 ns | 36.5A | 20V | SILICON | DRAIN | SWITCHING | 3.7W Ta 52W Tc | 60A | 20 mJ | 100V | N-Channel | 845pF @ 50V | 21m Ω @ 10A, 10V | 3.5V @ 250μA | 36.5A Tc | 24nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ444EP-T1_GE3 | Vishay Siliconix | $1.13 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj444ept1ge3-datasheets-0087.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 68W Tc | N-Channel | 5000pF @ 25V | 3.2mOhm @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR632DP-T1-RE3 | Vishay Siliconix | $1.14 |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir632dpt1re3-datasheets-0172.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 150V | 69.5W Tc | N-Channel | 740pF @ 75V | 34.5m Ω @ 10A, 10V | 4V @ 250μA | 29A Tc | 17nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR818DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sir818dpt1ge3-datasheets-0329.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | 2.8mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.2W | 1 | FET General Purpose Power | R-PDSO-C5 | 14 ns | 15ns | 10 ns | 36 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 69W Tc | 30V | N-Channel | 3660pF @ 15V | 2.8m Ω @ 20A, 10V | 2.4V @ 250μA | 50A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF510STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf510spbf-datasheets-1259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | TO-263 (D2Pak) | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 3.7W Ta 43W Tc | 540mOhm | 100V | N-Channel | 180pF @ 25V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V |
