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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRL620SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl620spbf-datasheets-5093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 360pF | 4.2 ns | 31ns | 17 ns | 18 ns | 5.2A | 10V | 200V | 2V | 3.1W Ta 50W Tc | 800mOhm | N-Channel | 360pF @ 25V | 800mOhm @ 3.1A, 10V | 2V @ 250μA | 5.2A Tc | 16nC @ 5V | 800 mΩ | 4V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFI9Z14GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfi9z14gpbf-datasheets-5098.pdf | -60V | -5.3A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | 3 | No | 1 | Single | 27W | TO-220-3 | 270pF | 11 ns | 63ns | 31 ns | 9.6 ns | -5.3A | 20V | 60V | 27W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | 500mOhm @ 3.2A, 10V | 4V @ 250μA | 5.3A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHB15N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb15n50ege3-datasheets-5110.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | Unknown | 3 | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSSO-G2 | 14.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 156W Tc | 28A | 0.28Ohm | 500V | N-Channel | 1162pF @ 100V | 280m Ω @ 7.5A, 10V | 4V @ 250μA | 14.5A Tc | 66nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI820GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfi820gpbf-datasheets-5120.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | yes | No | e3 | MATTE TIN | 260 | 3 | 1 | Single | 40 | 30W | 1 | 2kV | 8 ns | 8.6ns | 16 ns | 33 ns | 2.1A | 20V | SILICON | SWITCHING | 4V | 30W Tc | TO-220AB | 520 ns | 8.4A | 500V | N-Channel | 360pF @ 25V | 3 Ω @ 1.3A, 10V | 4V @ 250μA | 2.1A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHF7N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihf7n60ege3-datasheets-4918.pdf | TO-220-3 Full Pack | 14 Weeks | 6.000006g | Unknown | 3 | EAR99 | No | 1 | Single | 31W | FET General Purpose Powers | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | 600V | 2V | 31W Tc | 7A | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA15N50E-E3 | Vishay Siliconix | $1.83 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha15n50ee3-datasheets-5196.pdf | TO-220-3 Full Pack | 3 | 14 Weeks | 6.000006g | Unknown | 243mOhm | 3 | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 14.5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 4V | 33W Tc | TO-220AB | 28A | N-Channel | 1162pF @ 100V | 280m Ω @ 7.5A, 10V | 4V @ 250μA | 14.5A Tc | 66nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQP120N06-06_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp120n0606ge3-datasheets-5221.pdf | TO-220-3 | 12 Weeks | TO-220AB | 60V | 175W Tc | N-Channel | 6495pF @ 25V | 6mOhm @ 30A, 10V | 3.5V @ 250μA | 119A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP240N60E-GE3 | Vishay Siliconix | $0.61 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp240n60ege3-datasheets-5223.pdf | TO-220-3 | 18 Weeks | TO-220AB | 600V | 78W Tc | N-Channel | 795pF @ 100V | 240mOhm @ 5.5A, 10V | 5V @ 250μA | 12A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM40020EL_GE3 | Vishay Siliconix | $1.89 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40020elge3-datasheets-5226.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 40V | 150W Tc | N-Channel | 8800pF @ 25V | 2.2mOhm @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 165nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF6N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihf6n65ege3-datasheets-5252.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | Tin | NOT SPECIFIED | Single | NOT SPECIFIED | 31W | 1 | 14 ns | 12ns | 20 ns | 30 ns | 7A | 20V | SILICON | ISOLATED | SWITCHING | 31W Tc | TO-220AB | 7A | 0.6Ohm | 56 mJ | 650V | N-Channel | 820pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHA240N60E-GE3 | Vishay Siliconix | $0.60 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha240n60ege3-datasheets-5258.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 600V | 31W Tc | N-Channel | 783pF @ 100V | 240mOhm @ 5.5A, 10V | 5V @ 250μA | 12A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP14N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp14n50de3-datasheets-5260.pdf | TO-220-3 | 3 | 15 Weeks | 6.000006g | 3 | No | 1 | Single | 208W | 1 | 16 ns | 27ns | 26 ns | 29 ns | 14A | 30V | SILICON | SWITCHING | 500V | 500V | 208W Tc | TO-220AB | 0.4Ohm | 56 mJ | N-Channel | 1144pF @ 100V | 400m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQP10250E_GE3 | Vishay Siliconix | $1.67 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp10250ege3-datasheets-5267.pdf | TO-220-3 | 12 Weeks | TO-220AB | 250V | 250W Tc | N-Channel | 4050pF @ 25V | 30mOhm @ 15A, 10V | 3.5V @ 250μA | 53A Tc | 75nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP20N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-sihp20n50ege3-datasheets-5294.pdf | TO-220-3 | 3 | 18 Weeks | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 17 ns | 27ns | 25 ns | 48 ns | 19A | 20V | SILICON | SWITCHING | 500V | 500V | 4V | 179W Tc | TO-220AB | 42A | 204 mJ | N-Channel | 1640pF @ 100V | 184m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIB7N50APBF | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfib7n50apbf-datasheets-5299.pdf | 500V | 6.6A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 520MOhm | 3 | No | 1 | Single | 60W | 1 | TO-220-3 | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 6.6A | 30V | 500V | 4V | 60W Tc | 520mOhm | 500V | N-Channel | 1423pF @ 25V | 520mOhm @ 4A, 10V | 4V @ 250μA | 6.6A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHP12N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp12n60ege3-datasheets-3444.pdf | TO-220-3 | Lead Free | 19 Weeks | 6.000006g | 380mOhm | 3 | No | 1 | Single | 147W | 1 | TO-220AB | 937pF | 14 ns | 19ns | 19 ns | 35 ns | 12A | 20V | 600V | 147W Tc | 320mOhm | 600V | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 380 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF12N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihf12n60ee3-datasheets-5348.pdf | TO-220-3 Full Pack | Lead Free | 6.000006g | Unknown | 380mOhm | 3 | No | 1 | Single | 33W | 1 | TO-220 Full Pack | 937pF | 14 ns | 19ns | 19 ns | 35 ns | 12A | 20V | 600V | 2V | 33W Tc | 380mOhm | 600V | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 380 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFI840GLCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfi840glcpbf-datasheets-5358.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 850mOhm | 3 | 1 | Single | 40W | 1 | TO-220-3 | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 4.5A | 30V | 500V | 4V | 40W Tc | 850mOhm | 500V | N-Channel | 1100pF @ 25V | 850mOhm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48RPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfz48rpbf-datasheets-5378.pdf | 60V | 50A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | 1 | Single | 190W | 1 | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 190W Tc | TO-220AB | 180 ns | 290A | 60V | N-Channel | 2400pF @ 25V | 18m Ω @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF740ALPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf740alpbf-datasheets-5440.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | Lead Free | 2.387001g | Unknown | 550mOhm | 3 | 1 | Single | 3.1W | 1 | I2PAK | 1.03nF | 10 ns | 35ns | 22 ns | 24 ns | 10A | 30V | 400V | 4V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1030pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfbc30apbf-datasheets-5471.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 2.2Ohm | 3 | No | 44A | 600V | 1 | Single | 74W | 1 | TO-220AB | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 4.5V | 74W Tc | 2.2Ohm | 600V | N-Channel | 510pF @ 25V | 4.5 V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHP11N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sihp11n80ege3-datasheets-5529.pdf | TO-220-3 | 18 Weeks | 800V | 179W Tc | N-Channel | 1670pF @ 100V | 440m Ω @ 5.5A, 10V | 4V @ 250μA | 12A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB6N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihb6n65ege3-datasheets-5579.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 14 Weeks | Unknown | 600mOhm | 3 | yes | No | GULL WING | Single | 78W | 1 | R-PSSO-G2 | 14 ns | 12ns | 20 ns | 30 ns | 7A | 20V | SILICON | SWITCHING | 2V | 78W Tc | 7A | 56 mJ | 650V | N-Channel | 820pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS40N60KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfps40n60kpbf-datasheets-5634.pdf | TO-274AA | 16.1mm | 20.8mm | 5.3mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 130MOhm | 3 | No | 1 | Single | 570W | 1 | SUPER-247™ (TO-274AA) | 7.97nF | 47 ns | 110ns | 60 ns | 97 ns | 40A | 30V | 600V | 5V | 570W Tc | 130mOhm | 600V | N-Channel | 7970pF @ 25V | 130mOhm @ 24A, 10V | 5V @ 250μA | 40A Tc | 330nC @ 10V | 130 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SQP120N10-09_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqp120n1009ge3-datasheets-5665.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 375W Tc | TO-220AB | 120A | 480A | 0.0095Ohm | 266 mJ | N-Channel | 8645pF @ 25V | 9.5m Ω @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8447DB-T2-E1 | Vishay Siliconix | $0.67 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8447dbt2e1-datasheets-5723.pdf | 6-UFBGA | 6 | 75mOhm | yes | EAR99 | e3 | PURE MATTE TIN | BOTTOM | BALL | 260 | 6 | 30 | 2.77W | 1 | Other Transistors | Not Qualified | R-PBGA-B6 | 10ns | 15 ns | 30 ns | 11A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.77W Ta 13W Tc | 5.1A | 15A | -20V | P-Channel | 600pF @ 10V | 75m Ω @ 1A, 4.5V | 1.2V @ 250μA | 11A Tc | 25nC @ 10V | 1.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| SI5499DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5499dct1ge3-datasheets-5811.pdf | 8-SMD, Flat Lead | 8 | Single | 2.5W | 1206-8 ChipFET™ | 1.29nF | -6A | 5V | 8V | 2.5W Ta 6.2W Tc | 36mOhm | 8V | P-Channel | 1290pF @ 4V | 36mOhm @ 5.1A, 4.5V | 800mV @ 250μA | 6A Tc | 35nC @ 8V | 36 mΩ | 1.5V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIUD412ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-siud412edt1ge3-datasheets-5952.pdf | PowerPAK® 0806 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | 1.25W Ta | 0.34Ohm | N-Channel | 21pF @ 6V | 340m Ω @ 500mA, 4.5V | 900mV @ 250μA | 500mA Tc | 0.71nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irlz14pbf-datasheets-8320.pdf | 60V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 200mOhm | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 10A | 10V | 60V | 2V | 43W Tc | 130 ns | 200mOhm | 60V | N-Channel | 400pF @ 25V | 2 V | 200mOhm @ 6A, 5V | 2V @ 250μA | 10A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| SIR610DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sir610dpt1re3-datasheets-8328.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 150°C | 9 ns | 20 ns | 8.6A | 20V | 104W Tc | 200V | N-Channel | 1380pF @ 100V | 31.9m Ω @ 10A, 10V | 4V @ 250μA | 35.4A Tc | 38nC @ 10V | 7.5V 10V | ±20V |
