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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI8487DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si8487dbt1e1-datasheets-0357.pdf | 4-UFBGA | 21 Weeks | No SVHC | 4 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | Other Transistors | 7 ns | 10ns | 60 ns | 290 ns | -7.7A | 12V | 30V | -600mV | 1.1W Ta 2.7W Tc | -30V | P-Channel | 2240pF @ 15V | 31m Ω @ 2A, 10V | 1.2V @ 250μA | 80nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2361AEES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2361aeest1ge3-datasheets-0653.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 12 Weeks | 2 | EAR99 | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 2W | 1 | 175°C | R-PDSO-G3 | 9 ns | 9ns | 4 ns | 24 ns | -2.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 2W Tc | 45 pF | -60V | P-Channel | 620pF @ 30V | 170m Ω @ 2.4A, 10V | 2.5V @ 250μA | 2.8A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4172DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4172dyt1ge3-datasheets-0618.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | 12mOhm | 8 | yes | EAR99 | Tin | No | e4 | Silver (Ag) | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.5W | 1 | FET General Purpose Power | 8 ns | 10ns | 8 ns | 16 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 4.5W Tc | 30V | N-Channel | 820pF @ 15V | 12m Ω @ 11A, 10V | 2.5V @ 250μA | 15A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI3464DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3464dvt1ge3-datasheets-0715.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1.1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 30 | 2W | 1 | FET General Purpose Powers | 3 ns | 12ns | 8 ns | 22 ns | 8A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta 3.6W Tc | 8A | 0.024Ohm | 20V | N-Channel | 1065pF @ 10V | 450 mV | 24m Ω @ 7.5A, 4.5V | 1V @ 250μA | 8A Tc | 18nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SIA436DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia436djt1ge3-datasheets-0775.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 1 | Single | 3.5W | 1 | FET General Purpose Power | S-PDSO-N3 | 11 ns | 10ns | 8 ns | 30 ns | 12A | 5V | SILICON | DRAIN | SWITCHING | 350mV | 3.5W Ta 19W Tc | 50A | 0.0094Ohm | 8V | N-Channel | 1508pF @ 4V | 9.4m Ω @ 15.7A, 4.5V | 800mV @ 250μA | 12A Tc | 25.2nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||
| SI8851EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8851edbt2e1-datasheets-0756.pdf | 30-XFBGA | 30 | 21 Weeks | Unknown | 30 | EAR99 | BOTTOM | BALL | 260 | SI8851 | 40 | 1 | 35 ns | 40ns | 35 ns | 115 ns | 16.7A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | -1V | 660mW Ta | 80A | 0.0086Ohm | 20V | P-Channel | 6900pF @ 10V | 8m Ω @ 7A, 4.5V | 1V @ 250μA | 7.7A Ta | 180nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3426EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq3426evt1ge3-datasheets-0848.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 5W Tc | 7A | 0.042Ohm | 70 pF | N-Channel | 720pF @ 30V | 42m Ω @ 5A, 10V | 2.5V @ 250μA | 7A Tc | 12nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3419AEEV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq3419aeevt1ge3-datasheets-0873.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | 6 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 5W | 1 | 175°C | R-PDSO-G6 | 9 ns | 26 ns | -6.9A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 5W Tc | -40V | P-Channel | 975pF @ 20V | 61m Ω @ 2.5A, 10V | 2.5V @ 250μA | 6.9A Tc | 12.5nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ148EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj148ept1ge3-datasheets-0932.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 45W Tc | 14A | 40A | 0.033Ohm | 6 mJ | N-Channel | 600pF @ 25V | 33m Ω @ 7A, 10V | 2.5V @ 250μA | 15A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4178DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4178dyt1ge3-datasheets-0934.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 21mOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | 8 | 1 | Single | 2.4W | 1 | 20 ns | 10 ns | 12 ns | 12A | 25V | SILICON | SWITCHING | 30V | 30V | 2.8V | 2.4W Ta 5W Tc | N-Channel | 405pF @ 15V | 1.4 V | 21m Ω @ 8.4A, 10V | 2.8V @ 250μA | 12A Tc | 12nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| SQ3426AEEV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sq3426aeevt1ge3-datasheets-1035.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | 6-TSOP | 7 ns | 10ns | 4 ns | 20 ns | 7A | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF740BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf740bpbf-datasheets-1180.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | No SVHC | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 1 | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | SILICON | SWITCHING | 400V | 400V | 5V | 147W Tc | TO-220AB | 0.6Ohm | N-Channel | 526pF @ 100V | 600m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL510PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irl510pbf-datasheets-1186.pdf | 100V | 5.6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | No SVHC | 540mOhm | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 250pF | 9.3 ns | 47ns | 18 ns | 16 ns | 5.6A | 10V | 100V | 2V | 43W Tc | 130 ns | 540mOhm | 100V | N-Channel | 250pF @ 25V | 2 V | 540mOhm @ 3.4A, 5V | 2V @ 250μA | 5.6A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| IRF644PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf644pbf-datasheets-1274.pdf | 250V | 14A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 280mOhm | 3 | Tin | No | 1 | Single | 125W | 1 | TO-220AB | 1.3nF | 11 ns | 24ns | 49 ns | 53 ns | 14A | 20V | 250V | 4V | 125W Tc | 500 ns | 280mOhm | 250V | N-Channel | 1300pF @ 25V | 4 V | 280mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF9Z34SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-irf9z34strrpbf-datasheets-5811.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 140mOhm | 3 | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | R-PSSO-G2 | 18 ns | 120ns | 58 ns | 20 ns | 18A | 20V | SILICON | SWITCHING | 60V | 60V | -4V | 3.7W Ta 88W Tc | 72A | P-Channel | 1100pF @ 25V | 140m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF840BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf840bpbf-datasheets-1324.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | No SVHC | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 1 | 13 ns | 16ns | 11 ns | 17 ns | 8.7A | 30V | SILICON | SWITCHING | 5V | 156W Tc | TO-220AB | 0.85Ohm | 29 mJ | 500V | N-Channel | 527pF @ 100V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8.7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z24SPBF | Vishay Siliconix | $1.27 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z24spbf-datasheets-1340.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 280mOhm | 3 | No | 1 | Single | 60W | 1 | D2PAK | 570pF | 13 ns | 68ns | 29 ns | 15 ns | 11A | 20V | 60V | -4V | 3.7W Ta 60W Tc | 280mOhm | -60V | P-Channel | 570pF @ 25V | -4 V | 280mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI4823DY-T1-GE3 | Vishay Siliconix | $0.67 |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4823dyt1ge3-datasheets-0720.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.7W | 1 | 18 ns | 40ns | 10 ns | 18 ns | 3.3A | 12V | SILICON | 20V | 1.7W Ta 2.8W Tc | -20V | P-Channel | 660pF @ 10V | 108m Ω @ 3.3A, 4.5V | 1.5V @ 250μA | 4.1A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF640PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf640pbf-datasheets-1387.pdf&product=vishaysiliconix-irf640pbf-6842900 | 200V | 18A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 180mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.3nF | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | 200V | 4V | 125W Tc | 180mOhm | 200V | N-Channel | 1300pF @ 25V | 2 V | 180mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 180 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLZ34PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irlz34pbf-datasheets-1446.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 50mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 30A | 10V | 60V | 2V | 88W Tc | 50mOhm | 60V | N-Channel | 1600pF @ 25V | 2 V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfbc30pbf-datasheets-1456.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 2.2Ohm | 3 | No | 44A | 600V | 1 | Single | 74W | 1 | TO-220AB | 660pF | 11 ns | 13ns | 14 ns | 35 ns | 3.6A | 20V | 600V | 4V | 74W Tc | 810 ns | 2.2Ohm | 600V | N-Channel | 660pF @ 25V | 4 V | 2.2Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 31nC @ 10V | 2.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFZ20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfz20pbf-datasheets-1493.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 100MOhm | 3 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | No | 260 | 3 | 1 | Single | 40 | 40W | 1 | FET General Purpose Power | 15 ns | 45ns | 15 ns | 20 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 4V | 40W Tc | TO-220AB | 60A | 5 mJ | 50V | N-Channel | 850pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 15A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF840SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irf840spbf-datasheets-1527.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 5.08mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | No SVHC | 850mOhm | 3 | No | 1 | Single | 3.1W | 1 | 150°C | D2PAK | 1.3nF | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | 500V | 500V | 2V | 3.1W Ta 125W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 850 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF9610PBF | Vishay Siliconix | $0.88 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9610pbf-datasheets-1546.pdf | -200V | -1.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | No | 200V | 1 | Single | 20W | 1 | TO-220AB | 170pF | 8 ns | 15ns | 8 ns | 10 ns | -1.8A | 20V | 200V | -4V | 20W Tc | 360 ns | 3Ohm | -200V | P-Channel | 170pF @ 25V | -4 V | 3Ohm @ 900mA, 10V | 4V @ 250μA | 1.8A Tc | 11nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF9640SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9640strlpbf-datasheets-0346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 500mOhm | 3 | 1 | Single | 125W | 1 | D2PAK | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | -11A | 20V | 200V | -4V | 3W Ta 125W Tc | 500mOhm | -200V | P-Channel | 1200pF @ 25V | -4 V | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQP50P03-07_GE3 | Vishay Siliconix | $2.28 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp50p0307ge3-datasheets-1693.pdf | TO-220-3 | 12 Weeks | TO-220AB | 30V | 150W Tc | P-Channel | 5380pF @ 25V | 7mOhm @ 30A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF620SPBF | Vishay Siliconix | $15.79 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf620strlpbf-datasheets-3318.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 800MOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 200V | 3W Ta 50W Tc | 800mOhm | 200V | N-Channel | 260pF @ 25V | 4 V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFI9530GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfi9530gpbf-datasheets-1713.pdf | -100V | -7.7A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 300mOhm | 3 | No | 1 | Single | 38W | 1 | TO-220-3 | 860pF | 2.5kV | 12 ns | 52ns | 39 ns | 31 ns | -7.7A | 20V | 100V | -4V | 42W Tc | 300mOhm | -100V | P-Channel | 860pF @ 25V | -4 V | 300mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 38nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRLZ44PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irlz44pbf-datasheets-1724.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 28mOhm | 3 | 1 | Single | 150W | 1 | TO-220AB | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 50A | 10V | 60V | 2V | 150W Tc | 28mOhm | 60V | N-Channel | 3300pF @ 25V | 2 V | 28mOhm @ 31A, 5V | 2V @ 250μA | 50A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFB11N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfb11n50apbf-datasheets-1825.pdf | 500V | 11A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 520mOhm | 3 | No | 1 | Single | 170W | 1 | TO-220AB | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 4V | 170W Tc | 520mOhm | 500V | N-Channel | 1423pF @ 25V | 4 V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V |
