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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI5419DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si5419dut1ge3-datasheets-1876.pdf | 8-PowerVDFN | 3mm | 750μm | 1.9mm | Lead Free | 3 | 14 Weeks | 20MOhm | 8 | EAR99 | e3 | MATTE TIN | DUAL | NO LEAD | 260 | 8 | 1 | Single | 40 | 3.1W | 1 | Not Qualified | R-XDSO-N3 | 10 ns | 10ns | 12 ns | 40 ns | 9.9A | 20V | SILICON | DRAIN | SWITCHING | 30V | 3.1W Ta 31W Tc | 40A | -30V | P-Channel | 1400pF @ 15V | 20m Ω @ 6.6A, 10V | 2.5V @ 250μA | 12A Tc | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI8461DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8461dbt2e1-datasheets-1707.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 15 Weeks | Unknown | 100mOhm | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | Single | 30 | 780mW | 1 | Other Transistors | 15 ns | 25ns | 10 ns | 35 ns | -3.7A | 8V | SILICON | SWITCHING | 20V | -1V | 780mW Ta 1.8W Tc | 2.5A | -20V | P-Channel | 610pF @ 10V | 100m Ω @ 1.5A, 4.5V | 1V @ 250μA | 24nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SIB406EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib406edkt1ge3-datasheets-1256.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | 3 | 14 Weeks | 95.991485mg | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | 40 | 1.95W | 1 | FET General Purpose Powers | S-XDSO-N3 | 5 ns | 12ns | 12 ns | 15 ns | 5.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.95W Ta 10W Tc | 6A | 20V | N-Channel | 350pF @ 10V | 46m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 6A Tc | 12nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| SI8457DB-T1-E1 | Vishay Siliconix | $2.97 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8457dbt1e1-datasheets-2199.pdf | 4-UFBGA | 21 Weeks | Unknown | 15mOhm | 4 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | -10.2A | 12V | -900mV | 1.1W Ta 2.7W Tc | P-Channel | 2900pF @ 6V | 19m Ω @ 3A, 4.5V | 700mV @ 250μA | 93nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2361ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2361est1ge3-datasheets-2383.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 12 Weeks | EAR99 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 1 | 10 | 2W | 1 | 175°C | R-PDSO-G3 | 8 ns | 22 ns | -2.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 2W Tc | 42 pF | -60V | P-Channel | 550pF @ 30V | 177m Ω @ 2.4A, 10V | 2.5V @ 250μA | 2.8A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI5448DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si5448dut1ge3-datasheets-3652.pdf | PowerPAK® ChipFET™ Single | 850μm | 14 Weeks | EAR99 | e3 | Tin (Sn) | 260 | 1 | 30 | 3.1W | 150°C | 10 ns | 15 ns | 15.9A | 20V | 31W Tc | 40V | N-Channel | 1765pF @ 20V | 7.75m Ω @ 15A, 10V | 2.5V @ 250μA | 25A Tc | 20nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3424BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3424bdvt1ge3-datasheets-2612.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 28MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1 | FET General Purpose Power | 18 ns | 85ns | 12 ns | 17 ns | 7A | 20V | SILICON | SWITCHING | 2.1W Ta 2.98W Tc | 7A | 30V | N-Channel | 735pF @ 15V | 28m Ω @ 7A, 10V | 3V @ 250μA | 8A Tc | 19.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SQA410EJ-T1_GE3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa410ejt1ge3-datasheets-2530.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 20V | 13.6W Tc | N-Channel | 485pF @ 10V | 28mOhm @ 5A, 4.5V | 1.1V @ 250μA | 7.8A Tc | 8nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7464DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7464dpt1e3-datasheets-2721.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 1.8W | 1 | R-PDSO-F5 | 10 ns | 12ns | 12 ns | 15 ns | 2.8A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 8A | 0.24Ohm | 0.45 mJ | 200V | N-Channel | 50ns | 35ns | 4 V | 240m Ω @ 2.8A, 10V | 4V @ 250μA | 1.8A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI7898DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7898dpt1e3-datasheets-9418.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 85mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 9 ns | 10ns | 10 ns | 24 ns | 3A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 3A | 25A | 150V | N-Channel | 4 V | 85m Ω @ 3.5A, 10V | 4V @ 250μA | 3A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||
| SIR626DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir626dpt1re3-datasheets-2749.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 104W Tc | 100A | 200A | 0.002Ohm | 125 mJ | N-Channel | 5130pF @ 30V | 78ns | 88ns | 1.7m Ω @ 20A, 10V | 3.4V @ 250μA | 100A Tc | 78nC @ 7.5V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ401EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | /files/vishaysiliconix-sqj401ept1ge3-datasheets-2735.pdf | PowerPAK® SO-8 | 12 Weeks | 5 | No | 83W | 1 | PowerPAK® SO-8 | 43 ns | 63ns | 166 ns | 263 ns | 32A | 8V | 12V | 83W Tc | P-Channel | 10015pF @ 6V | 6mOhm @ 15A, 4.5V | 1.5V @ 250μA | 32A Tc | 164nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR880ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir880adpt1ge3-datasheets-2763.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8.9MOhm | 8 | EAR99 | No | C BEND | 2 | Dual | 5.4W | 1 | FET General Purpose Powers | R-PDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 5.4W Ta 83W Tc | 45 mJ | 80V | N-Channel | 2289pF @ 40V | 6.3m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 72nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7464DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7464dpt1e3-datasheets-2721.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 1.8W | 1 | R-PDSO-F5 | 10 ns | 12ns | 15 ns | 15 ns | 1.8A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 8A | 0.24Ohm | 0.45 mJ | 200V | N-Channel | 50ns | 35ns | 240m Ω @ 2.8A, 10V | 4V @ 250μA | 1.8A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIR158DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sir158dpt1re3-datasheets-9659.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 1.8MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 5.4W | 1 | FET General Purpose Power | R-PDSO-C5 | 28 ns | 36ns | 16 ns | 47 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 60A | 30V | N-Channel | 4980pF @ 15V | 1.8m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI4488DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4488dyt1e3-datasheets-8822.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | FET General Purpose Powers | 12 ns | 7ns | 10 ns | 22 ns | 5A | 20V | SILICON | 2V | 1.56W Ta | 0.05Ohm | 150V | N-Channel | 50m Ω @ 5A, 10V | 2V @ 250μA (Min) | 3.5A Ta | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SUD40151EL-GE3 | Vishay Siliconix | $1.49 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud40151elge3-datasheets-2921.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 40V | 50W Tc | P-Channel | 5340pF @ 20V | 12mOhm @ 17.5A, 10V | 2.5V @ 250μA | 42A Tc | 112nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL640STRLPBF | Vishay Siliconix | $1.68 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irl640strlpbf-datasheets-2956.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 180mOhm | 3 | Tin | No | 17A | 200V | 1 | Single | 3.1W | 1 | D2PAK | 4.39nF | 8 ns | 83ns | 52 ns | 44 ns | 17A | 10V | 200V | 3.1W Ta 125W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 180mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 2.7 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| SI4465ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si4465adyt1ge3-datasheets-7618.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 9mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | Single | 40 | 3W | 1 | Other Transistors | 33 ns | 170ns | 112 ns | 168 ns | -13.7A | 8V | SILICON | 8V | -450mV | 3W Ta 6.5W Tc | 20A | P-Channel | 9m Ω @ 14A, 4.5V | 1V @ 250μA | 85nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| IRFR9024TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 280mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 68ns | 29 ns | 15 ns | -8.8A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 42W Tc | P-Channel | 570pF @ 25V | 280m Ω @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIR440DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir440dpt1ge3-datasheets-3061.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 1.55mOhm | 8 | yes | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 6.25W | 1 | FET General Purpose Powers | Not Qualified | R-XDSO-C5 | 45 ns | 29ns | 48 ns | 81 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 6.25W Ta 104W Tc | 47A | 20V | N-Channel | 6000pF @ 10V | 2.5 V | 1.55m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 150nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI4842BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4842bdyt1ge3-datasheets-3156.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 125 ns | 190ns | 13 ns | 38 ns | 28A | 20V | SILICON | 30V | 30V | 3W Ta 6.25W Tc | 20A | 0.0042Ohm | N-Channel | 3650pF @ 15V | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 28A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI7370DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7370dpt1ge3-datasheets-8633.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | No SVHC | 11MOhm | 8 | yes | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 12ns | 12 ns | 50 ns | 15.8A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 9.6A | 50A | 60V | N-Channel | 4 V | 11m Ω @ 12A, 10V | 4V @ 250μA | 9.6A Ta | 57nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIR640ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir640adpt1ge3-datasheets-3002.pdf | PowerPAK® SO-8 | 6.15mm | 1.04mm | 5.15mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | DUAL | FLAT | 260 | 1 | Single | 30 | 6.25W | 1 | R-PDSO-F5 | 38 ns | 70ns | 12 ns | 42 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2V | 6.25W Ta 104W Tc | 350A | 0.0025Ohm | 40V | N-Channel | 4240pF @ 20V | 2m Ω @ 20A, 10V | 2V @ 250μA | 41.6A Ta 100A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF620STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf620strlpbf-datasheets-3318.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 800mOhm | 3 | Tin | No | 1 | Single | 3W | 1 | D2PAK | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 3W Ta 50W Tc | 800mOhm | 200V | N-Channel | 260pF @ 25V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIR688DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir688dpt1ge3-datasheets-3256.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 8 | EAR99 | No | DUAL | C BEND | Single | 5.4W | 1 | R-PDSO-C5 | 8ns | 8 ns | 31 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 5.4W Ta 83W Tc | 0.0035Ohm | 45 mJ | N-Channel | 3105pF @ 30V | 3.5m Ω @ 20A, 10V | 2.7V @ 250μA | 60A Tc | 66nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ402E-T1_GE3 | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq402et1ge3-datasheets-3394.pdf | PowerPAK® 8 x 8 Single | 4 | 12 Weeks | EAR99 | unknown | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 150W Tc | 200A | 300A | 0.0017Ohm | 361 mJ | N-Channel | 13500pF @ 20V | 1.7m Ω @ 20A, 10V | 2.5V @ 250μA | 200A Tc | 260nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR638DP-T1-GE3 | Vishay Siliconix | $1.59 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr638dpt1ge3-datasheets-3409.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 40V | 125W Tc | N-Channel | 10500pF @ 20V | 0.88m Ω @ 20A, 10V | 2.3V @ 250μA | 100A Tc | 204nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7190DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7190dpt1ge3-datasheets-3307.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 118MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 30 | 96W | 1 | FET General Purpose Power | R-XDSO-C5 | 13 ns | 12ns | 9 ns | 28 ns | 4.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 2V | 5.4W Ta 96W Tc | 30A | N-Channel | 2214pF @ 125V | 118m Ω @ 4.4A, 10V | 4V @ 250μA | 18.4A Tc | 72nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI7634BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7634bdpt1ge3-datasheets-3414.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 5.4mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 30 ns | 12ns | 12 ns | 34 ns | 22.5A | 20V | SILICON | DRAIN | 1.4V | 5W Ta 48W Tc | 40A | 70A | 45 mJ | 30V | N-Channel | 3150pF @ 15V | 5.4m Ω @ 15A, 10V | 2.6V @ 250μA | 40A Tc | 68nC @ 10V | 4.5V 10V | ±20V |
