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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF620PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irf620pbf-datasheets-8474.pdf | 250V | 5.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 800mOhm | 3 | No | 52A | 200V | 1 | Single | 50W | 1 | TO-220AB | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 2V | 50W Tc | 300 ns | 800mOhm | 200V | N-Channel | 260pF @ 25V | 2 V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF710PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf710pbf-datasheets-8514.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3.6Ohm | 3 | 1 | Single | 36W | 1 | TO-220AB | 170pF | 8 ns | 9.9ns | 11 ns | 21 ns | 2A | 20V | 400V | 4V | 36W Tc | 540 ns | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 2 V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF830BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf830bpbf-datasheets-8568.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 1 | 8.2 ns | 16ns | 16 ns | 42 ns | 5.3A | 20V | SILICON | SWITCHING | 104W Tc | TO-220AB | 500V | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF820PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf820pbf-datasheets-8574.pdf | 500V | 2.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | 1 | Single | 50W | 1 | TO-220AB | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.5A | 20V | 500V | 4V | 50W Tc | 520 ns | 3Ohm | 500V | N-Channel | 360pF @ 25V | 4 V | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRL520PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irl520pbf-datasheets-8619.pdf | 100V | 9.2A | TO-220-3 | 10.54mm | 8.76mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 270mOhm | 3 | 1 | Single | 60W | 1 | TO-220AB | 490pF | 9.8 ns | 64ns | 27 ns | 21 ns | 9.2A | 10V | 100V | 2V | 60W Tc | 270mOhm | 100V | N-Channel | 490pF @ 25V | 270mOhm @ 5.5A, 5V | 2V @ 250μA | 9.2A Tc | 12nC @ 5V | 270 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| SI4774DY-T1-GE3 | Vishay Siliconix | $1.42 |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4774dyt1ge3-datasheets-8743.pdf | 8-SOIC (0.154, 3.90mm Width) | 13 Weeks | 540.001716mg | 9.5mOhm | 1 | 8-SO | 8 ns | 13ns | 9 ns | 14 ns | 16A | 20V | 30V | 5W Tc | 7.9mOhm | N-Channel | 1025pF @ 15V | 9.5mOhm @ 10A, 10V | 2.3V @ 1mA | 16A Tc | 14.3nC @ 4.5V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3460DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si3460ddvt1ge3-datasheets-8816.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 28mOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.7W | 1 | 6 ns | 11ns | 8 ns | 21 ns | 7.9A | 8V | SILICON | SWITCHING | 20V | 20V | 400mV | 1.7W Ta 2.7W Tc | N-Channel | 666pF @ 10V | 28m Ω @ 5.1A, 4.5V | 1V @ 250μA | 7.9A Tc | 18nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SQM40P10-40L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40p1040lge3-datasheets-8725.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | No | 150W | 1 | TO-263 (D2Pak) | 10 ns | 10ns | 20 ns | 63 ns | 40A | 20V | 100V | 150W Tc | P-Channel | 5295pF @ 25V | 40mOhm @ 17A, 10V | 2.5V @ 250μA | 40A Tc | 134nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfd9110pbf-datasheets-9062.pdf | -100V | -700mA | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 3 | 8 Weeks | Unknown | 1.2Ohm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 3 | Single | 1.3W | 1 | Other Transistors | R-PDIP-T3 | 10 ns | 27ns | 27 ns | 15 ns | -700mA | 20V | SILICON | DRAIN | SWITCHING | -4V | 1.3W Ta | 0.7A | 5.6A | 100V | P-Channel | 200pF @ 25V | -4 V | 1.2 Ω @ 420mA, 10V | 4V @ 250μA | 700mA Ta | 8.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI8824EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8824edbt2e1-datasheets-8952.pdf | 4-XFBGA | 4 | 44 Weeks | Unknown | 60mOhm | 4 | EAR99 | BOTTOM | BALL | NOT SPECIFIED | NOT SPECIFIED | 1 | 2.9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 800mV | 500mW Ta | N-Channel | 400pF @ 10V | 75m Ω @ 1A, 4.5V | 800mV @ 250μA | 6nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM50P06-15L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm50p0615lge3-datasheets-8764.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 60V | 150W Tc | P-Channel | 6120pF @ 25V | 15mOhm @ 17A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISA96DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sisa96dnt1ge3-datasheets-9179.pdf | PowerPAK® 1212-8 | 1.17mm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.5W | 150°C | 8 ns | 13 ns | 14.8A | 26.5W Tc | 30V | N-Channel | 1385pF @ 15V | 8.8m Ω @ 10A, 10V | 2.2V @ 250μA | 16A Tc | 15nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3474DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3474dvt1ge3-datasheets-9311.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | 6 | 14 Weeks | No SVHC | 6 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 2W | 1 | 150°C | 8 ns | 68ns | 20 ns | 10 ns | 2.8A | 20V | SILICON | SWITCHING | 3.6W Tc | 3.8A | 100V | N-Channel | 196pF @ 50V | 126m Ω @ 2A, 10V | 3V @ 250μA | 3.8A Tc | 10.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI8812DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si8812dbt2e1-datasheets-9171.pdf | 4-UFBGA | Lead Free | 4 | 44 Weeks | 4 | EAR99 | unknown | e3 | Matte Tin (Sn) | BOTTOM | BALL | 1 | Single | 900mW | 1 | 3.2A | 8V | SILICON | SWITCHING | 20V | 20V | 500mW Ta | 0.065Ohm | N-Channel | 59m Ω @ 1A, 4.5V | 1V @ 250μA | 17nC @ 8V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8465DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8465dbt2e1-datasheets-9388.pdf | 4-XFBGA, CSPBGA | 4 | 46 Weeks | Unknown | 4 | yes | EAR99 | No | e3 | PURE MATTE TIN | BOTTOM | BALL | 260 | 4 | Single | 30 | 1 | 20 ns | 20ns | 10 ns | 25 ns | -3.8A | 12V | SILICON | SWITCHING | 20V | 20V | -1.5V | 780mW Ta 1.8W Tc | 2.5A | P-Channel | 450pF @ 10V | 104m Ω @ 1.5A, 4.5V | 1.5V @ 250μA | 18nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| SI2305CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2305cdst1ge3-datasheets-9390.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 35mOhm | 3 | yes | EAR99 | No | 58A | e3 | Matte Tin (Sn) | 8V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 960mW | 1 | Other Transistors | 150°C | 20 ns | 20ns | 20 ns | 40 ns | -4.4A | 8V | SILICON | SWITCHING | -400mV | 960mW Ta 1.7W Tc | -8V | P-Channel | 960pF @ 4V | 35m Ω @ 4.4A, 4.5V | 1V @ 250μA | 5.8A Tc | 30nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI3443CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3443cdvt1e3-datasheets-8804.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 60mOhm | 6 | yes | EAR99 | Tin | No | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 3.2W | 1 | Other Transistors | 27 ns | 59ns | 11 ns | 30 ns | 3.9A | 12V | SILICON | SWITCHING | 20V | -600mV | 2W Ta 3.2W Tc | 5.97A | -20V | P-Channel | 610pF @ 10V | -600 mV | 60m Ω @ 4.7A, 4.5V | 1.5V @ 250μA | 5.97A Tc | 12.4nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||
| SI1032X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1032rt1ge3-datasheets-5605.pdf | SC-89, SOT-490 | 1.7mm | 800μm | 950μm | Lead Free | 3 | 14 Weeks | 29.993795mg | Unknown | 5Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 3 | 1 | Single | 30 | 300mW | 1 | FET General Purpose Power | 50 ns | 25ns | 25 ns | 50 ns | 200mA | 6V | SILICON | SWITCHING | 20V | 20V | 700mV | 300mW Ta | 0.2A | N-Channel | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 200mA Ta | 0.75nC @ 4.5V | 1.5V 4.5V | ±6V | ||||||||||||||||||||||||||||||||
| SI1013CX-T1-GE3 | Vishay Siliconix | $0.38 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1013cxt1ge3-datasheets-9530.pdf | SC-89, SOT-490 | 3 | 14 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 3 | 1 | 190mW | 1 | Other Transistors | 1 ns | 8ns | 5 ns | 9 ns | 450mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 190mW Ta | 0.45A | 0.76Ohm | -20V | P-Channel | 45pF @ 10V | 760m Ω @ 400mA, 4.5V | 1V @ 250μA | 450mA Ta | 2.5nC @ 4.5V | 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| SI3407DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3407dvt1ge3-datasheets-9665.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 24mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | -8A | 12V | SILICON | 20V | -1.5V | 4.2W Tc | 7.5A | -20V | P-Channel | 1670pF @ 10V | -1.5 V | 24m Ω @ 7.5A, 4.5V | 1.5V @ 250μA | 8A Tc | 63nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SQ1431EH-T1_GE3 | Vishay Siliconix | $0.47 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq1431eht1ge3-datasheets-9563.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | SC-70-6 (SOT-363) | 30V | 3W Tc | P-Channel | 205pF @ 25V | 175mOhm @ 2A, 10V | 2V @ 250μA | 3A Tc | 6.5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2303CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2303cdst1ge3-datasheets-4410.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | 190MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 2.3W | 1 | Other Transistors | 36 ns | 37ns | 37 ns | 12 ns | 1.9A | 20V | SILICON | SWITCHING | 30V | 2.3W Tc | 2.7A | -30V | P-Channel | 155pF @ 15V | 190m Ω @ 1.9A, 10V | 3V @ 250μA | 2.7A Tc | 8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF720PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf720pbf-datasheets-9729.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.8Ohm | 3 | No | 33A | 400V | 1 | Single | 50W | 1 | TO-220AB | 410pF | 10 ns | 14ns | 13 ns | 30 ns | 3.3A | 20V | 400V | 4V | 50W Tc | 600 ns | 1.8Ohm | 400V | N-Channel | 410pF @ 25V | 4 V | 1.8Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI2301BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2301bdst1e3-datasheets-4774.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 100MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 700mW | 1 | Other Transistors | 20 ns | 40ns | 40 ns | 30 ns | -2.2A | 8V | SILICON | 20V | -950mV | 700mW Ta | -20V | P-Channel | 375pF @ 6V | -950 mV | 100m Ω @ 2.8A, 4.5V | 950mV @ 250μA | 2.2A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| SI1330EDL-T1-GE3 | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1330edlt1e3-datasheets-1598.pdf | SC-70, SOT-323 | 3 | 14 Weeks | 124.596154mg | 3 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 280mW | 1 | FET General Purpose Powers | 3.8 ns | 4.8ns | 9.6 ns | 12.8 ns | 240mA | 20V | SILICON | SWITCHING | 60V | 60V | 280mW Ta | 0.24A | N-Channel | 2.5 Ω @ 250mA, 10V | 2.5V @ 250μA | 240mA Ta | 0.6nC @ 4.5V | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI8483DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8483dbt2e1-datasheets-9921.pdf | 6-UFBGA | 1.5mm | 310μm | 1mm | 6 | 21 Weeks | No SVHC | 6 | EAR99 | Tin | No | e3 | BOTTOM | BALL | 1 | Single | 2.77W | 1 | Other Transistors | 20 ns | 20ns | 20 ns | 80 ns | -16A | 10V | SILICON | SWITCHING | 12V | -400mV | 2.77W Ta 13W Tc | 25A | 0.035Ohm | P-Channel | 1840pF @ 6V | 26m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 16A Tc | 65nC @ 10V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| SQ2308CES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq2308cest1ge3-datasheets-9997.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 2W | 1 | 175°C | R-PDSO-G3 | 4 ns | 12 ns | 2.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 2V | 2W Tc | TO-236AB | 60V | N-Channel | 205pF @ 30V | 150m Ω @ 2.3A, 10V | 2.5V @ 250μA | 2.3A Tc | 5.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI8439DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8439dbt1e1-datasheets-9962.pdf | 4-UFBGA | 4 | 13 Weeks | No SVHC | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 1 | Single | 1 | 30 ns | 25ns | 210 ns | 330 ns | -9.2A | -800mV | SILICON | SWITCHING | 8V | -400mV | 1.1W Ta 2.7W Tc | 0.025Ohm | -8V | P-Channel | 25m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 50nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQ7414AEN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sq7414aent1ge3-datasheets-0330.pdf | PowerPAK® 1212-8 | 1.17mm | Lead Free | 12 Weeks | No SVHC | 22mOhm | 8 | EAR99 | SQ7414AEN-T1_GE3 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 62W | 175°C | 9 ns | 20 ns | 16A | 20V | 2V | 62W Tc | 60V | N-Channel | 980pF @ 30V | 26m Ω @ 5.7A, 10V | 2.5V @ 250μA | 16A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA36DP-T1-GE3 | Vishay Siliconix | $0.42 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | PowerPAK® SO-8 | 14 Weeks | 506.605978mg | 8 | No | 44.6W | 1 | Single | 4.1W | 1 | PowerPAK® SO-8 | 2.815nF | 12 ns | 10ns | 9 ns | 26 ns | 40A | -16V | 30V | 2.8mOhm | 30V | N-Channel | 2815pF @ 15V | 2.8mOhm @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 56nC @ 10V | 2.8 mΩ | 4.5V 10V | +20V, -16V |
