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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4124DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4124dyt1ge3-datasheets-3524.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 30 ns | 14ns | 11 ns | 38 ns | 13.6A | 20V | SILICON | SWITCHING | 40V | 40V | 2.5W Ta 5.7W Tc | 20.5A | 0.0075Ohm | N-Channel | 3540pF @ 20V | 7.5m Ω @ 14A, 10V | 3V @ 250μA | 20.5A Tc | 77nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI7110DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7110dnt1e3-datasheets-6972.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | S-XDSO-C5 | 12 ns | 10ns | 10 ns | 36 ns | 21.1A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 1.5W Ta | 60A | 0.0053Ohm | 20V | N-Channel | 5.3m Ω @ 21.1A, 10V | 2.5V @ 250μA | 13.5A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI7155DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7155dpt1ge3-datasheets-3485.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 6.25W Ta 104W Tc | P-Channel | 12900pF @ 20V | 3.6mOhm @ 20A, 10V | 2.3V @ 250μA | 31A Ta 100A Tc | 330nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM70060E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum70060ege3-datasheets-3536.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 131A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 375W Tc | 240A | 0.0062Ohm | 125 mJ | N-Channel | 3330pF @ 50V | 5.6m Ω @ 30A, 10V | 4V @ 250μA | 131A Tc | 81nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQR40N10-25_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqr40n1025ge3-datasheets-3561.pdf | TO-252-4, DPak (3 Leads + Tab) | 12 Weeks | TO-252 (DPAK) Reverse Lead | 100V | 136W Tc | N-Channel | 3380pF @ 25V | 25mOhm @ 40A, 10V | 2.5V @ 250μA | 40A Tc | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD35N10-26P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sud35n1026pe3-datasheets-3743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | 2 | 14 Weeks | 1.437803g | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 8.3W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 10ns | 10 ns | 15 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 100V | 8.3W Ta 83W Tc | 35A | 40A | 0.026Ohm | 55 mJ | N-Channel | 2000pF @ 12V | 26m Ω @ 12A, 10V | 4.4V @ 250μA | 35A Tc | 47nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SQJ410EP-T1_GE3 | Vishay Siliconix | $1.94 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj410ept1ge3-datasheets-3697.pdf | PowerPAK® SO-8 | 12 Weeks | 5 | No | 83W | 1 | PowerPAK® SO-8 | 15 ns | 11ns | 9 ns | 40 ns | 32A | 20V | 30V | 83W Tc | N-Channel | 6210pF @ 15V | 3.9mOhm @ 10.3A, 10V | 2.5V @ 250μA | 32A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA00DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sira00dpt1ge3-datasheets-3704.pdf | PowerPAK® SO-8 | 5.99mm | 1.07mm | 5mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 4mOhm | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 6.25W | 1 | R-PDSO-C5 | 18 ns | 14ns | 11 ns | 67 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 6.25W Ta 104W Tc | 400A | 30V | N-Channel | 11700pF @ 15V | 1.1 V | 1m Ω @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 220nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||
| SUD35N10-26P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud35n1026pe3-datasheets-3743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 14 Weeks | 1.437803g | 26MOhm | 3 | Tin | unknown | GULL WING | 1 | Single | 1 | R-PSSO-G2 | 10 ns | 10ns | 10 ns | 15 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 100V | 8.3W Ta 83W Tc | TO-252AA | 40A | 55 mJ | N-Channel | 2000pF @ 12V | 26m Ω @ 12A, 10V | 4.4V @ 250μA | 35A Tc | 47nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI7858ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7858adpt1ge3-datasheets-0758.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 2.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 40 ns | 40ns | 70 ns | 140 ns | 29A | 8V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 20A | 60A | 12V | N-Channel | 5700pF @ 6V | 2.6m Ω @ 29A, 4.5V | 1.5V @ 250μA | 20A Ta | 80nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| SI4866DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4866dyt1e3-datasheets-3926.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 5.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 8 | 1 | Single | 1.6W | 1 | 28 ns | 32ns | 35 ns | 82 ns | 17A | 8V | SILICON | SWITCHING | 1.6W Ta | 12V | N-Channel | 600 mV | 5.5m Ω @ 17A, 4.5V | 600mV @ 250μA (Min) | 11A Ta | 30nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SQJ412EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj412ept1ge3-datasheets-3855.pdf | PowerPAK® SO-8 | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 83W | 1 | PowerPAK® SO-8 | 5.95nF | 45 ns | 150ns | 55 ns | 50 ns | 32A | 20V | 40V | 2V | 83W Tc | 4.5mOhm | N-Channel | 5950pF @ 20V | 2 V | 4.1mOhm @ 10.3A, 10V | 2.5V @ 250μA | 32A Tc | 120nC @ 10V | 4.1 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7116DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7116dnt1e3-datasheets-0566.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 7.8MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 36 ns | 10.5A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 1.5W Ta | 60A | N-Channel | 7.8m Ω @ 16.4A, 10V | 2.5V @ 250μA | 10.5A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SQM70060EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqm70060elge3-datasheets-3982.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 166W Tc | 67A | 180A | 0.0059Ohm | 180 mJ | N-Channel | 5500pF @ 25V | 5.9m Ω @ 30A, 10V | 2.5V @ 250μA | 75A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE882DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie882dft1ge3-datasheets-4337.pdf | 10-PolarPAK® (L) | 4 | 14 Weeks | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | unknown | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 10 | 1 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N4 | 45 ns | 170ns | 85 ns | 65 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 25V | 25V | 5.2W Ta 125W Tc | N-Channel | 6400pF @ 12.5V | 1.4m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 145nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFR9220TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | 200V | 42W Tc | 1.5Ohm | P-Channel | 340pF @ 25V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIE820DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie820dft1ge3-datasheets-4394.pdf | 10-PolarPAK® (S) | 4 | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 30A | 12V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 50A | 80A | 0.0035Ohm | 45 mJ | 20V | N-Channel | 4300pF @ 10V | 3.5m Ω @ 18A, 4.5V | 2V @ 250μA | 50A Tc | 143nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| SI4842BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4842bdyt1ge3-datasheets-3156.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 4.2mOhm | 8 | yes | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 20 | 6.25W | 1 | FET General Purpose Powers | Not Qualified | 125 ns | 190ns | 13 ns | 38 ns | 28A | 20V | SILICON | 3W Ta 6.25W Tc | 30V | N-Channel | 3650pF @ 15V | 1.4 V | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 28A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI4421DY-T1-GE3 | Vishay Siliconix | $1.88 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4421dyt1e3-datasheets-9294.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | 45 ns | 90ns | 170 ns | 350 ns | -14A | 8V | SILICON | SWITCHING | 20V | 20V | -800mV | 1.5W Ta | P-Channel | 8.75m Ω @ 14A, 4.5V | 800mV @ 850μA | 10A Ta | 125nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SQD50P03-07_GE3 | Vishay Siliconix | $12.16 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0307ge3-datasheets-4543.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 136W | 1 | TO-252AA | 11 ns | 12ns | 28 ns | 63 ns | 50A | 20V | 30V | 136W Tc | P-Channel | 5490pF @ 25V | 7mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 146nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE868DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie868dft1ge3-datasheets-4585.pdf | 10-PolarPAK® (L) | 4 | 15 Weeks | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 40 ns | 165ns | 110 ns | 65 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 60A | 0.0029Ohm | 40V | N-Channel | 6100pF @ 20V | 2.3m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 145nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIR826ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir826adpt1ge3-datasheets-4671.pdf&product=vishaysiliconix-sir826adpt1ge3-6841328 | PowerPAK® SO-8 | 1.12mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 5.5mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | DUAL | C BEND | 8 | 1 | Single | 6.25W | 1 | 150°C | R-PDSO-C5 | 9 ns | 15ns | 8 ns | 34 ns | 23.8A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 6.25W Ta 104W Tc | 60A | 80V | N-Channel | 2800pF @ 40V | 5.5m Ω @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 86nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF9530STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irf9530spbf-datasheets-9674.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 300mOhm | 3 | Tin | No | 1 | Single | 3.7W | 1 | D2PAK | 860pF | 12 ns | 52ns | 39 ns | 31 ns | 12A | 20V | 100V | 3.7W Ta 88W Tc | 300mOhm | -100V | P-Channel | 860pF @ 25V | 300mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 38nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI7430DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7430dpt1ge3-datasheets-4795.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 45mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.2W | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 12ns | 7 ns | 20 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 5.2W Ta 64W Tc | 7.2A | 50A | 20 mJ | 150V | N-Channel | 1735pF @ 50V | 45m Ω @ 5A, 10V | 4.5V @ 250μA | 26A Tc | 43nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||
| SI9407BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si9407bdyt1ge3-datasheets-7869.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 506.605978mg | No SVHC | 120mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.4W | 1 | Other Transistors | 150°C | 10 ns | 70ns | 30 ns | 35 ns | -4.7A | 20V | SILICON | SWITCHING | 60V | -3V | 2.4W Ta 5W Tc | -60V | P-Channel | 600pF @ 30V | 120m Ω @ 3.2A, 10V | 3V @ 250μA | 4.7A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7611DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7611dnt1ge3-datasheets-7908.pdf | PowerPAK® 1212-8 | 3.05mm | 1.17mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.7W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 10 ns | 11ns | 9 ns | 30 ns | -18A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | -1V | 3.7W Ta 39W Tc | 9.3A | 20A | 26 mJ | -40V | P-Channel | 1980pF @ 20V | -3 V | 25m Ω @ 9.3A, 10V | 3V @ 250μA | 18A Tc | 62nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| IRF9640PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9640pbf-datasheets-8001.pdf | -200V | -11A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 500mOhm | 3 | Tin | No | 1 | Single | 125W | 1 | 150°C | TO-220AB | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | -11A | 20V | 200V | -4V | 125W Tc | 300 ns | 500mOhm | -200V | P-Channel | 1200pF @ 25V | -4 V | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SUM55P06-19L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sum55p0619le3-datasheets-8087.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 19mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 125W | 1 | Other Transistors | R-PSSO-G2 | 12 ns | 15ns | 230 ns | 80 ns | -5.5A | 20V | SILICON | SWITCHING | 60V | -1V | 3.75W Ta 125W Tc | 55A | -60V | P-Channel | 3500pF @ 25V | 19m Ω @ 30A, 10V | 3V @ 250μA | 55A Tc | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFBG30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irfbg30pbf-datasheets-8239.pdf | 1kV | 3.1A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 5Ohm | 3 | Tin | 1 | Single | 125W | 1 | 150°C | TO-220AB | 980pF | 12 ns | 25ns | 20 ns | 89 ns | 3.1A | 20V | 1000V | 2V | 125W Tc | 620 ns | 5Ohm | 1kV | N-Channel | 980pF @ 25V | 4 V | 5Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 80nC @ 10V | 5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF9520PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf9520pbf-datasheets-8466.pdf | -100V | -6.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 600mOhm | 3 | No | 1 | Single | 60W | 1 | TO-220AB | 390pF | 9.6 ns | 29ns | 25 ns | 21 ns | -6.8A | 20V | 100V | -4V | 60W Tc | 200 ns | 600mOhm | -100V | P-Channel | 390pF @ 25V | -2 V | 600mOhm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V |
