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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHFR430ATRL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 500V | 110W Tc | N-Channel | 490pF @ 25V | 1.7Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5404BDC-T1-E3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5404bdct1e3-datasheets-1082.pdf | 8-SMD, Flat Lead | 3.0988mm | 1.0922mm | 1.7018mm | Lead Free | 84.99187mg | Unknown | 28mOhm | 8 | No | 1 | Single | 1.3W | 1 | 1206-8 ChipFET™ | 12 ns | 12ns | 12 ns | 25 ns | 7.5A | 12V | 20V | 600mV | 1.3W Ta | 28mOhm | 20V | N-Channel | 28mOhm @ 5.4A, 4.5V | 1.5V @ 250μA | 5.4A Ta | 11nC @ 4.5V | 28 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| IRFR9210TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu9210pbf-datasheets-5149.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 14 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | MATTE TIN | GULL WING | 260 | 3 | 1 | Single | 30 | 2.5W | 1 | R-PSSO-G2 | 8 ns | 12ns | 13 ns | 11 ns | 1.9A | 20V | SILICON | DRAIN | SWITCHING | 200V | 2.5W Ta 25W Tc | TO-252AA | 7.6A | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3 Ω @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 8.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| SI4778DY-T1-GE3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4778dyt1e3-datasheets-0263.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | 15 ns | 50ns | 10 ns | 20 ns | 8A | 16V | SILICON | SWITCHING | 2.4W Ta 5W Tc | 8A | 0.023Ohm | 25V | N-Channel | 680pF @ 13V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 8A Tc | 18nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| SIS776DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis776dnt1ge3-datasheets-1330.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | 8 | EAR99 | No | DUAL | C BEND | 8 | 1 | FET General Purpose Powers | S-XDSO-C5 | 18 ns | 11ns | 10 ns | 20 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 52W Tc | 60A | 0.0062Ohm | 20 mJ | N-Channel | 1360pF @ 15V | 6.2m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 36nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SQD30N05-20L_T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib422edkt1ge3-datasheets-2177.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 55V | 50W Tc | N-Channel | 1175pF @ 25V | 20mOhm @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 18nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR618DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir618dpt1ge3-datasheets-1367.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 200V | 48W Tc | N-Channel | 740pF @ 100V | 95mOhm @ 8A, 10V | 4V @ 250μA | 14.2A Tc | 16nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLIZ24GPBF | Vishay Siliconix | $0.35 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irliz24gpbf-datasheets-1443.pdf | TO-220-3 Full Pack | 8 Weeks | TO-220 Full Pack | 60V | 37W Tc | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ800DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sij800dpt1ge3-datasheets-1548.pdf | PowerPAK® SO-8 | 21 Weeks | Unknown | 8 | No | 35.7W | 1 | PowerPAK® SO-8 | 2.4nF | 30 ns | 15ns | 15 ns | 45 ns | 20A | 20V | 40V | 4.2W Ta 35.7W Tc | 9.5mOhm | 40V | N-Channel | 2400pF @ 20V | 9.5mOhm @ 20A, 10V | 3V @ 250μA | 20A Tc | 56nC @ 10V | 9.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIA418DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia418djt1ge3-datasheets-1726.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 15 Weeks | 6 | EAR99 | No | 1 | Single | 12A | 2.4V | 3.5W Ta 19W Tc | 30V | N-Channel | 570pF @ 15V | 18m Ω @ 9A, 10V | 2.4V @ 250μA | 12A Tc | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4431BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4431bdyt1e3-datasheets-6831.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 10 ns | 10ns | 10 ns | 70 ns | -5.7A | 20V | SILICON | 30V | 30V | -3V | 1.5W Ta | 0.03Ohm | P-Channel | 30m Ω @ 7.5A, 10V | 3V @ 250μA | 5.7A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIR624DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir624dpt1re3-datasheets-1809.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 200V | 5W Ta 52W Tc | 50mOhm | N-Channel | 1110pF @ 100V | 60mOhm @ 10A, 10V | 4V @ 250μA | 5.7A Ta 18.6A Tc | 30nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF730BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf730bpbf-datasheets-1961.pdf | TO-220-3 | 3 | 8 Weeks | No | e3 | MATTE TIN OVER NICKEL | SINGLE | 1 | R-PSFM-T3 | 12 ns | 11ns | 8 ns | 14 ns | 6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 104W Tc | TO-220AB | 6A | 13A | 1Ohm | 104 mJ | N-Channel | 311pF @ 100V | 1 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHP5N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp5n50dge3-datasheets-1990.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 104W | 1 | FET General Purpose Powers | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | SWITCHING | 500V | 500V | 3V | 104W Tc | TO-220AB | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| SIHF9520S-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9520spbf-datasheets-1890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 3.7W Ta 60W Tc | P-Channel | 390pF @ 25V | 600mOhm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ460AEP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj460aept2ge3-datasheets-2116.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 60V | 68W Tc | N-Channel | 2654pF @ 30V | 8.7mOhm @ 10.7A, 10V | 2.5V @ 250μA | 58A Tc | 106nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2301CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si2301cdst1ge3-datasheets-6412.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 14 Weeks | 1.437803g | No SVHC | 112mOhm | 3 | Tin | No | 1 | Single | 1.6W | 1 | 150°C | SOT-23-3 (TO-236) | 405pF | 11 ns | 35ns | 35 ns | 30 ns | -3.1A | 8V | 20V | -1V | 860mW Ta 1.6W Tc | 90mOhm | -20V | P-Channel | 405pF @ 10V | -400 mV | 112mOhm @ 2.8A, 4.5V | 1V @ 250μA | 3.1A Tc | 10nC @ 4.5V | 112 mΩ | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| SI8800EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8800edbt2e1-datasheets-6624.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 30 Weeks | 80mOhm | 4 | yes | EAR99 | No | e3 | MATTE TIN | BOTTOM | BALL | 260 | 4 | 2 | Dual | 30 | 900mW | 1 | FET General Purpose Power | 350 ns | 2.8A | 8V | SILICON | SWITCHING | 500mW Ta | 2A | 20V | N-Channel | 80m Ω @ 1A, 4.5V | 1V @ 250μA | 8.3nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SQ2309ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2309est1ge3-datasheets-6748.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | TO-236 (SOT-23) | 60V | 2W Tc | 125mOhm | P-Channel | 265pF @ 25V | 336mOhm @ 3.8A, 10V | 2.5V @ 250μA | 1.7A Tc | 8.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2312CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si2312cdst1ge3-datasheets-6616.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 31.8MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | FET General Purpose Powers | 150°C | 8 ns | 17ns | 8 ns | 31 ns | 6A | 8V | SILICON | SWITCHING | 1V | 1.25W Ta 2.1W Tc | 6A | 20V | N-Channel | 865pF @ 10V | 31.8m Ω @ 5A, 4.5V | 1V @ 250μA | 6A Tc | 18nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||
| SIS427EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis427ednt1ge3-datasheets-6829.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | S-PDSO-C5 | 45 ns | 40ns | 12 ns | 28 ns | -50A | 25V | SILICON | DRAIN | SWITCHING | 30V | 3.7W Ta 52W Tc | -30V | P-Channel | 1930pF @ 15V | 10.6m Ω @ 11A, 10V | 2.5V @ 250μA | 50A Tc | 66nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| SI4401DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4401ddyt1ge3-datasheets-6917.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 15mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 6.3W | 1 | Other Transistors | 150°C | 13 ns | 45 ns | -16.1A | 20V | SILICON | SWITCHING | 40V | -2.5V | 2.5W Ta 6.3W Tc | -40V | P-Channel | 3007pF @ 20V | 15m Ω @ 10.2A, 10V | 2.5V @ 250μA | 16.1A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIS413DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis413dnt1ge3-datasheets-6716.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 14 Weeks | No SVHC | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.7W | 1 | 150°C | S-PDSO-C5 | 11 ns | 11ns | 8 ns | 45 ns | -14.7A | 20V | SILICON | DRAIN | SWITCHING | 30V | -2.5V | 3.7W Ta 52W Tc | 70A | 0.0094Ohm | 20 mJ | -30V | P-Channel | 4280pF @ 15V | 9.4m Ω @ 15A, 10V | 2.5V @ 250μA | 18A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIS434DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis434dnt1ge3-datasheets-7064.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | Unknown | 7.6mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 250 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 30 ns | 25ns | 20 ns | 40 ns | 35A | 20V | SILICON | DRAIN | 2.2V | 3.8W Ta 52W Tc | 60A | 45 mJ | 40V | N-Channel | 1530pF @ 20V | 7.6m Ω @ 16.2A, 10V | 2.2V @ 250μA | 35A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SQJ457EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqj457ept1ge3-datasheets-7053.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 68W | 175°C | 15 ns | 40 ns | -36A | 20V | 60V | 68W Tc | -60V | P-Channel | 3400pF @ 25V | 25m Ω @ 10A, 10V | 2.5V @ 250μA | 36A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR426DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir426dpt1ge3-datasheets-7218.pdf | PowerPAK® SO-8 | 1.12mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 12.5MOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 41.7W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 9 ns | 15ns | 10 ns | 18 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 4.8W Ta 41.7W Tc | 70A | 20 mJ | 40V | N-Channel | 1160pF @ 20V | 2.5 V | 10.5m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SI2301CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2301cdst1ge3-datasheets-6412.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 860mW | 1 | Other Transistors | 150°C | 11 ns | 35ns | 35 ns | 30 ns | -2.3A | 8V | SILICON | SWITCHING | 20V | -1V | 860mW Ta 1.6W Tc | -20V | P-Channel | 405pF @ 10V | 112m Ω @ 2.8A, 4.5V | 1V @ 250μA | 3.1A Tc | 10nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||
| SI7386DP-T1-GE3 | Vishay Siliconix | $4.57 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7386dpt1ge3-datasheets-7400.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 14 Weeks | 506.605978mg | Unknown | 7mOhm | 8 | No | 1 | Single | 1.8W | 1 | PowerPAK® SO-8 | 12 ns | 9ns | 9 ns | 35 ns | 19A | 20V | 30V | 2.5V | 1.8W Ta | 7mOhm | 30V | N-Channel | 7mOhm @ 19A, 10V | 2.5V @ 250μA | 12A Ta | 18nC @ 4.5V | 7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIR462DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir462dpt1ge3-datasheets-7448.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 4.8W | 1 | FET General Purpose Powers | R-XDSO-C5 | 20 ns | 15ns | 10 ns | 25 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3V | 4.8W Ta 41.7W Tc | 70A | N-Channel | 1155pF @ 15V | 3 V | 7.9m Ω @ 20A, 10V | 3V @ 250μA | 30A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SI4116DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4116dyt1e3-datasheets-4103.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8.6mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Powers | 13 ns | 11ns | 15 ns | 50 ns | 18A | 12V | SILICON | SWITCHING | 600mV | 2.5W Ta 5W Tc | 25V | N-Channel | 1925pF @ 15V | 1.4 V | 8.6m Ω @ 10A, 10V | 1.4V @ 250μA | 18A Tc | 56nC @ 10V | 2.5V 10V | ±12V |
