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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUD50N024-09P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n02409pe3-datasheets-9627.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 2 | yes | EAR99 | e3 | MATTE TIN OVER NICKEL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 6.5W | 1 | FET General Purpose Power | Not Qualified | 10ns | 12 ns | 25 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 6.5W Ta 39.5W Tc | 100A | 0.017Ohm | 22V | N-Channel | 1300pF @ 10V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 49A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SQJ858EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj858ept1ge3-datasheets-9633.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 40V | 68W Tc | N-Channel | 2500pF @ 20V | 6mOhm @ 11A, 10V | 2.5V @ 250μA | 75A Tc | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7804DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7804dnt1e3-datasheets-3704.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | S-XDSO-C5 | 8 ns | 12ns | 12 ns | 32 ns | 6.5A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.5W Ta | 40A | N-Channel | 18.5m Ω @ 10A, 10V | 1.8V @ 250μA | 6.5A Ta | 13nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRL520LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irl520lpbf-datasheets-9748.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.54mm | 8.76mm | 4.7mm | 3 | 12 Weeks | 6.000006g | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | 3 | 1 | Single | 1 | FET General Purpose Power | 9.8 ns | 64ns | 27 ns | 21 ns | 9.2A | 10V | SILICON | DRAIN | SWITCHING | 60W Tc | 0.27Ohm | 100V | N-Channel | 490pF @ 25V | 270m Ω @ 5.5A, 5V | 2V @ 250μA | 9.2A Tc | 12nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| SIRA52DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | /files/vishay-sira52dpt1ge3-datasheets-4741.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | S17-0173-Single | 1 | 4.8W | 150°C | PowerPAK® SO-8 | 10 ns | 38 ns | 39.6A | 40V | 48W Tc | 1.4mOhm | 40V | N-Channel | 7150pF @ 20V | 1.7mOhm @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 150nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF530STRL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf530strlpbf-datasheets-7596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 3.7W Ta 88W Tc | N-Channel | 670pF @ 25V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD100N02_3M5L4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd100n023m5l4ge3-datasheets-0114.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 20V | 83W Tc | N-Channel | 5500pF @ 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA60DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira60dpt1ge3-datasheets-7211.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 57W Tc | N-Channel | 7650pF @ 15V | 0.94mOhm @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 125nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40N06-14L_T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40n0614lge3-datasheets-8291.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 60V | 75W Tc | N-Channel | 2105pF @ 25V | 14mOhm @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 51nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5443DC-T1-E3 | Vishay Siliconix | $0.34 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5443dct1e3-datasheets-0192.pdf | 8-SMD, Flat Lead | 8 | 21 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | Not Qualified | 30ns | 30 ns | 50 ns | 3.6A | 12V | SILICON | 1.3W Ta | 0.065Ohm | 20V | P-Channel | 65m Ω @ 3.6A, 4.5V | 600mV @ 250μA (Min) | 3.6A Ta | 14nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| SI5443DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5443dct1e3-datasheets-0192.pdf | 8-SMD, Flat Lead | 8 | 21 Weeks | 65mOhm | yes | EAR99 | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 30 | 1.3W | 1 | Other Transistors | Not Qualified | R-XDSO-C8 | 3.6A | 12V | SILICON | 1.3W Ta | 20V | P-Channel | 65m Ω @ 3.6A, 4.5V | 600mV @ 250μA (Min) | 3.6A Ta | 14nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SI1069X-T1-GE3 | Vishay Siliconix | $5.37 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1069xt1ge3-datasheets-0322.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 6 | 32.006612mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | 1 | Single | 30 | 1 | Other Transistors | 19 ns | 31ns | 31 ns | 23 ns | 940mA | 12V | SILICON | SWITCHING | 20V | 236mW Ta | 0.94A | -20V | P-Channel | 308pF @ 10V | 184m Ω @ 940mA, 4.5V | 1.5V @ 250μA | 6.86nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| IRFD214PBF | Vishay Siliconix | $0.27 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd214pbf-datasheets-0387.pdf | 4-DIP (0.300, 7.62mm) | 8 Weeks | 4 | No | Single | 1W | 4-DIP, Hexdip, HVMDIP | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 450mA | 20V | 250V | 1W Ta | 2Ohm | 250V | N-Channel | 140pF @ 25V | 2Ohm @ 270mA, 10V | 4V @ 250μA | 450mA Ta | 8.2nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHP5N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp5n50dge3-datasheets-1990.pdf | TO-220-3 | 3 | 13 Weeks | 6.000006g | 3 | No | 1 | Single | 104W | 1 | FET General Purpose Powers | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | SWITCHING | 500V | 500V | 104W Tc | TO-220AB | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SIR164DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir164dpt1re3-datasheets-0464.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 69W Tc | N-Channel | 3950pF @ 15V | 2.5mOhm @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 123nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8441DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8441dbt2e1-datasheets-0564.pdf | 6-UFBGA | 6 | 6 Weeks | 6 | yes | EAR99 | unknown | e3 | MATTE TIN | BOTTOM | BALL | 260 | 6 | 40 | 2.77W | 1 | Other Transistors | Not Qualified | 30ns | 10 ns | 35 ns | -10.5A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.77W Ta 13W Tc | 4.8A | 15A | 0.198Ohm | -20V | P-Channel | 600pF @ 10V | 80m Ω @ 1A, 4.5V | 700mV @ 250μA | 10.5A Tc | 13nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||
| SQD45P03-12-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd45p0312ge3-datasheets-8650.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 30V | 71W Tc | P-Channel | 3495pF @ 15V | 10mOhm @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 83nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7806ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7806adnt1e3-datasheets-6105.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 13 ns | 10ns | 10 ns | 33 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 9A | 40A | 30V | N-Channel | 11m Ω @ 14A, 10V | 3V @ 250μA | 9A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFR214PBF | Vishay Siliconix | $0.97 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu214pbf-datasheets-4957.pdf | 250V | 2.2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 2.2A | 20V | 250V | 4V | 2.5W Ta 25W Tc | 390 ns | 2Ohm | 250V | N-Channel | 140pF @ 25V | 2Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFR010TRPBF | Vishay Siliconix | $1.65 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr010pbf-datasheets-4965.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | 1.437803g | 3 | No | 1 | Single | D-Pak | 250pF | 10 ns | 50ns | 19 ns | 13 ns | 8.2A | 20V | 50V | 25W Tc | 200mOhm | 60V | N-Channel | 250pF @ 25V | 200mOhm @ 4.6A, 10V | 4V @ 250μA | 8.2A Tc | 10nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4638DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4638dyt1e3-datasheets-0786.pdf | 8-SOIC (0.154, 3.90mm Width) | 13 Weeks | 8-SO | 4.19nF | 19ns | 18 ns | 44 ns | 22.4A | 20V | 30V | 3W Ta 5.9W Tc | 6.5mOhm | 30V | N-Channel | 4190pF @ 15V | 6.5mOhm @ 15A, 10V | 2.7V @ 1mA | 22.4A Tc | 100nC @ 10V | 6.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7230DN-T1-GE3 | Vishay Siliconix | $0.25 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7230dnt1e3-datasheets-3689.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | S-XDSO-C5 | 13 ns | 10ns | 10 ns | 33 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3V | 1.5W Ta | 9A | 40A | N-Channel | 12m Ω @ 14A, 10V | 3V @ 250μA | 9A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFR010TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfr010pbf-datasheets-4965.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 11 Weeks | 1.437803g | 3 | yes | EAR99 | No | GULL WING | 1 | Single | 1 | R-PSSO-G2 | 10 ns | 50ns | 19 ns | 13 ns | 8.2A | 20V | SILICON | 50V | 25W Tc | TO-252AA | 0.2Ohm | 60V | N-Channel | 250pF @ 25V | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 8.2A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI6469DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6469dqt1ge3-datasheets-0848.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 15 Weeks | 28mOhm | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.5W | 1 | Other Transistors | Not Qualified | 6A | 8V | SILICON | SWITCHING | 1.5W Ta | 6A | 30A | 8V | P-Channel | 28m Ω @ 6A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| SQD50P08-28-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0828ge3-datasheets-4795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 80V | 136W Tc | P-Channel | 6035pF @ 25V | 28mOhm @ 12.5A, 10V | 3.5V @ 250μA | 48A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4666DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4666dyt1ge3-datasheets-0673.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.5W | 1 | 13 ns | 12ns | 10 ns | 27 ns | 16.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 5W Tc | 25V | N-Channel | 1145pF @ 10V | 600 mV | 10m Ω @ 10A, 10V | 1.5V @ 250μA | 16.5A Tc | 34nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||
| SI7703EDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7703ednt1e3-datasheets-0864.pdf | PowerPAK® 1212-8 | 6 | 49 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 40 | 1.3W | 1 | Other Transistors | S-XDSO-C6 | 4 ns | 6ns | 6 ns | 23 ns | -6.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 1.3W Ta | 4.3A | 20A | 20V | P-Channel | 48m Ω @ 6.3A, 4.5V | 1V @ 800μA | 4.3A Ta | 18nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| SQD40N10-25-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40n1025t4ge3-datasheets-0946.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 100V | 136W Tc | N-Channel | 3380pF @ 25V | 25mOhm @ 40A, 10V | 2.5V @ 250μA | 40A Tc | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF20SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishay-irfbf20spbf-datasheets-6251.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 8Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 4V | 3.1W Ta 54W Tc | 8Ohm | N-Channel | 490pF @ 25V | 4 V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SQR100N04-3M8R_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks |
