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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7726DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7726dnt1ge3-datasheets-4456.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 3.8W | 1 | FET General Purpose Power | S-XDSO-C5 | 23 ns | 10ns | 14 ns | 27 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 52W Tc | 60A | 0.0095Ohm | 20 mJ | N-Channel | 1765pF @ 15V | 2.6 V | 9.5m Ω @ 10A, 10V | 2.6V @ 250μA | 35A Tc | 43nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||
| SIR403EDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sir403edpt1ge3-datasheets-4467.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 8 | yes | EAR99 | Tin | No | DUAL | C BEND | 240 | 40 | 5W | 1 | R-PDSO-C5 | 40A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 5W Ta 56.8W Tc | 60A | 0.0065Ohm | P-Channel | 4620pF @ 15V | 6.5m Ω @ 13A, 10V | 2.8V @ 250μA | 40A Tc | 153nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||
| SIHU3N50DA-GE3 | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu3n50dage3-datasheets-4476.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 8 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 500V | 69W Tc | N-Channel | 177pF @ 100V | 3.2 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF530-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihfr420age3-datasheets-4094.pdf | TO-220-3 | 12 Weeks | TO-220AB | 100V | 88W Tc | N-Channel | 670pF @ 25V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB417EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sib417edkt1ge3-datasheets-4611.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | 3 | 14 Weeks | 95.991485mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 6 | 1 | Single | 40 | 2.4W | 1 | Other Transistors | S-XDSO-N3 | 12 ns | 31ns | 17 ns | 30 ns | -9A | 5V | SILICON | DRAIN | SWITCHING | 8V | 8V | -1V | 2.4W Ta 13W Tc | 5.8A | 0.058Ohm | P-Channel | 565pF @ 4V | -1 V | 58m Ω @ 5.8A, 4.5V | 1V @ 250μA | 9A Tc | 12nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||
| SIA438EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia438edjt1ge3-datasheets-4635.pdf | PowerPAK® SC-70-6 | 3 | 15 Weeks | 46mOhm | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | NO LEAD | 260 | 6 | 40 | 2.4W | 1 | FET General Purpose Powers | Not Qualified | S-XDSO-N3 | 12ns | 10 ns | 15 ns | 6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 11.4W Tc | 5.7A | 15A | 20V | N-Channel | 350pF @ 10V | 46m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 6A Tc | 12nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||
| SI8406DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8406dbt2e1-datasheets-4645.pdf | 6-UFBGA | 1.5mm | 310μm | 1mm | Lead Free | 43 Weeks | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | 7 ns | 18ns | 10 ns | 30 ns | 16A | 8V | 400mV | 2.77W Ta 13W Tc | 20V | N-Channel | 830pF @ 10V | 33m Ω @ 1A, 4.5V | 850mV @ 250μA | 16A Tc | 20nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SIA810DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia810djt1ge3-datasheets-4651.pdf | PowerPAK® SC-70-6 Dual | 6 | 15 Weeks | 6 | EAR99 | No | 6 | 1 | FET General Purpose Power | 5 ns | 32ns | 53 ns | 30 ns | 4.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.9W Ta 6.5W Tc | 20A | 0.053Ohm | N-Channel | 400pF @ 10V | 53m Ω @ 3.7A, 4.5V | 1V @ 250μA | 4.5A Tc | 11.5nC @ 8V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SIHLL110TR-GE3 | Vishay Siliconix | $0.53 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irll110trpbf-datasheets-8859.pdf | TO-261-4, TO-261AA | 12 Weeks | SOT-223 | 100V | 2W Ta 3.1W Tc | N-Channel | 250pF @ 25V | 540mOhm @ 900mA, 5V | 2V @ 250μA | 1.5A Tc | 6.1nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1431DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1431dht1e3-datasheets-4980.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 Weeks | 6 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 40 | 950mW | 1 | Other Transistors | Not Qualified | 40ns | 40 ns | 10 ns | 1.7A | 20V | SILICON | SWITCHING | 950mW Ta | 0.2Ohm | 30V | P-Channel | 200m Ω @ 2A, 10V | 3V @ 100μA | 1.7A Ta | 4nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI5458DU-T1-GE3 | Vishay Siliconix | $0.47 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5458dut1ge3-datasheets-4945.pdf | 8-PowerVDFN | Lead Free | 3 | 14 Weeks | 41mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 8 | 1 | Single | 30 | 1 | R-PDSO-N3 | 12 ns | 13ns | 11 ns | 11 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.5W Ta 10.4W Tc | 6A | 20A | N-Channel | 325pF @ 15V | 3 V | 41m Ω @ 7.1A, 10V | 3V @ 250μA | 6A Tc | 9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SI1404BDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1404bdht1ge3-datasheets-5004.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 Weeks | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | 1.9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.32W Ta 2.28W Tc | 0.238Ohm | N-Channel | 100pF @ 15V | 238m Ω @ 1.9A, 4.5V | 1.3V @ 250μA | 1.9A Ta 2.37A Tc | 2.7nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| SI1431DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1431dht1e3-datasheets-4980.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 Weeks | yes | EAR99 | unknown | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | 1.7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 950mW Ta | 0.2Ohm | P-Channel | 200m Ω @ 2A, 10V | 3V @ 100μA | 1.7A Ta | 4nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI3465DV-T1-GE3 | Vishay Siliconix | $1.64 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3465dvt1ge3-datasheets-5048.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 15 Weeks | 6 | unknown | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1.14W | 1 | 3A | 20V | SILICON | SWITCHING | 1.14W Ta | 3A | 0.08Ohm | 20V | P-Channel | 80m Ω @ 4A, 10V | 3V @ 250μA | 3A Ta | 5.5nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI3465DV-T1-E3 | Vishay Siliconix | $1.32 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3465dvt1ge3-datasheets-5048.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 21 Weeks | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 40 | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | 13ns | 13 ns | 19 ns | -4A | 20V | SILICON | SWITCHING | 1.14W Ta | 3A | 0.08Ohm | P-Channel | 80m Ω @ 4A, 10V | 3V @ 250μA | 3A Ta | 5.5nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI3442BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3442bdvt1e3-datasheets-3334.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 860mW | 1 | FET General Purpose Power | 35 ns | 50ns | 15 ns | 20 ns | 4.2A | 12V | SILICON | 20V | 20V | 1.8V | 860mW Ta | 3A | 0.057Ohm | N-Channel | 295pF @ 10V | 1.8 V | 57m Ω @ 4A, 4.5V | 1.8V @ 250μA | 3A Ta | 5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||
| SIHFL9110TR-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfl9110trpbf-datasheets-9205.pdf | TO-261-4, TO-261AA | 8 Weeks | SOT-223 | 100V | 2W Ta 3.1W Tc | P-Channel | 200pF @ 25V | 1.2Ohm @ 660mA, 10V | 4V @ 250μA | 1.1A Tc | 8.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ7002K-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq7002kt1ge3-datasheets-5441.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 21 Weeks | 3 | EAR99 | No | DUAL | GULL WING | 3 | 500mW | 1 | FET General Purpose Power | 14.6 ns | 15.3ns | 10.6 ns | 8.6 ns | 320mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 500mW Tc | N-Channel | 24pF @ 30V | 1.3 Ω @ 500mA, 10V | 2.5V @ 250μA | 320mA Tc | 1.4nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI4178DY-T1-E3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4178dyt1e3-datasheets-5445.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 405pF | 12A | 30V | 2.4W Ta 5W Tc | N-Channel | 405pF @ 15V | 21mOhm @ 8.4A, 10V | 2.8V @ 250μA | 12A Tc | 12nC @ 10V | 21 mΩ | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5424DC-T1-E3 | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5424dct1e3-datasheets-5453.pdf | 8-SMD, Flat Lead | 8 | 21 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 2.5W | 1 | FET General Purpose Power | 38ns | 9 ns | 26 ns | 6A | 25V | SILICON | SWITCHING | 2.5W Ta 6.25W Tc | 6A | 40A | 0.024Ohm | 30V | N-Channel | 950pF @ 15V | 24m Ω @ 4.8A, 10V | 2.3V @ 250μA | 6A Tc | 32nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||
| SIA436DJ-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia436djt1ge3-datasheets-0775.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 8V | 3.5W Ta 19W Tc | N-Channel | 1508pF @ 4V | 9.4mOhm @ 15.7A, 4.5V | 800mV @ 250μA | 12A Tc | 25.2nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS322DNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-sis322dntt1ge3-datasheets-5324.pdf | PowerPAK® 1212-8 | 5 | 13 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | FET General Purpose Powers | S-PDSO-C5 | 30 ns | 20ns | 14 ns | 30 ns | 38.3A | 2.4V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.2V | 3.2W Ta 19.8W Tc | 70A | 0.0075Ohm | 5 mJ | N-Channel | 1000pF @ 15V | 7.5m Ω @ 10A, 10V | 2.4V @ 250μA | 38.3A Tc | 21.5nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||
| SI3443BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3443bdvt1e3-datasheets-3274.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1 | Other Transistors | 22 ns | 35ns | 25 ns | 45 ns | 3.6A | 12V | SILICON | 20V | 20V | 1.1W Ta | P-Channel | 60m Ω @ 4.7A, 4.5V | 1.4V @ 250μA | 3.6A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||
| SIHFR9014-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-PAK (TO-252AA) | 60V | 2.5W Ta 25W Tc | P-Channel | 270pF @ 25V | 500mOhm @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1404BDH-T1-E3 | Vishay Siliconix | $0.04 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1404bdht1ge3-datasheets-5004.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 13 Weeks | 6 | yes | EAR99 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 6 | Single | 40 | 1 | FET General Purpose Power | Not Qualified | 30ns | 10 ns | 5 ns | 1.9A | 12V | SILICON | SWITCHING | 30V | 30V | 1.32W Ta 2.28W Tc | 2.37A | 0.238Ohm | N-Channel | 100pF @ 15V | 238m Ω @ 1.9A, 4.5V | 1.3V @ 250μA | 1.9A Ta 2.37A Tc | 2.7nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||
| SIHFR220-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu220pbf-datasheets-5110.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-PAK (TO-252AA) | 200V | 2.5W Ta 42W Tc | N-Channel | 260pF @ 25V | 800mOhm @ 2.9A, 10V | 4V @ 250μA | 4.8A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2316DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2316dst1e3-datasheets-5080.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 1.437803g | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Powers | 9 ns | 14 ns | 3.4A | 20V | SILICON | SWITCHING | 30V | 700mW Ta | 2.9A | 0.05Ohm | N-Channel | 215pF @ 15V | 50m Ω @ 3.4A, 10V | 800mV @ 250μA (Min) | 2.9A Ta | 7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI4176DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4176dyt1e3-datasheets-5845.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 490pF | 12A | 30V | 2.4W Ta 5W Tc | N-Channel | 490pF @ 15V | 20mOhm @ 8.3A, 10V | 2.2V @ 250μA | 12A Tc | 15nC @ 10V | 20 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4196DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4196dyt1ge3-datasheets-6002.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | 8A | 20V | 2W Ta 4.6W Tc | N-Channel | 830pF @ 10V | 27m Ω @ 8A, 4.5V | 1V @ 250μA | 8A Tc | 22nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFR9120-GE3 | Vishay Siliconix | $0.65 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-PAK (TO-252AA) | 100V | 2.5W Ta 42W Tc | P-Channel | 390pF @ 25V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 10V | ±20V |
