Products
Manufacturer
RFQ
NEWS
ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIA467EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia467edjt1ge3-datasheets-1496.pdf | PowerPAK® SC-70-6 | 3 | 15 Weeks | yes | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 19W | 1 | S-PDSO-N3 | 25ns | 50 ns | 90 ns | 31A | 8V | SILICON | DRAIN | SWITCHING | 12V | 3.5W Ta 19W Tc | 60A | 0.0145Ohm | 5.8 mJ | -12V | P-Channel | 2520pF @ 6V | 13m Ω @ 5A, 4.5V | 1V @ 250μA | 31A Tc | 72nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SUD42N03-3M9P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud42n033m9pge3-datasheets-0504.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 1.437803g | No SVHC | 2 | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 11 ns | 10ns | 10 ns | 35 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 1V | 2.5W Ta 73.5W Tc | 0.0039Ohm | 30V | N-Channel | 3535pF @ 15V | 3.9m Ω @ 22A, 10V | 2.5V @ 250μA | 42A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIA439EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia439edjt1ge3-datasheets-1696.pdf | PowerPAK® SC-70-6 | 3 | 25 Weeks | yes | EAR99 | No | DUAL | Single | 19W | 1 | S-PDSO-N3 | 20ns | 25 ns | 95 ns | 28A | 8V | SILICON | DRAIN | SWITCHING | 20V | 3.5W Ta 19W Tc | 60A | 0.018Ohm | 5.8 mJ | -20V | P-Channel | 2410pF @ 10V | 16.5m Ω @ 5A, 4.5V | 1V @ 250μA | 28A Tc | 69nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SQ2319ES-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sq2319est1ge3-datasheets-6546.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Unknown | 3 | yes | EAR99 | No | 3W | DUAL | GULL WING | 260 | SQ2319 | 3 | Single | 40 | 3W | 1 | Other Transistors | 7 ns | 15ns | 25 ns | 25 ns | -4.6A | 20V | SWITCHING | 40V | -2V | 0.082Ohm | -40V | P-Channel | 620pF @ 25V | 75m Ω @ 3A, 10V | 2.5V @ 250μA | 4.6A Tc | 16nC @ 10V | ||||||||||||||||||||||||||||||||||||||||
| SIR788DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir788dpt1ge3-datasheets-8652.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | 5 | 15 Weeks | 506.605978mg | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | FET General Purpose Powers | R-PDSO-C5 | 21 ns | 11ns | 9 ns | 29 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 48W Tc | 0.0034Ohm | 30V | N-Channel | 2873pF @ 15V | 3.4m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 75nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI8416DB-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8416dbt2e1-datasheets-8279.pdf | 6-UFBGA | 6 | 16A | 8V | 2.77W Ta 13W Tc | N-Channel | 1470pF @ 4V | 23m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 16A Tc | 26nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5429DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5429dut1ge3-datasheets-8656.pdf | PowerPAK® ChipFET™ Dual | 3.08mm | 850μm | 1.98mm | No SVHC | 8 | EAR99 | No | 31W | Single | 31W | 1 | 35 ns | 50ns | 20 ns | 60 ns | 12A | 20V | 30V | -1V | -30V | P-Channel | 2320pF @ 15V | 15m Ω @ 7A, 10V | 2.2V @ 250μA | 12A Tc | 63nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD17N25-165-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud17n25165e3-datasheets-9722.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 16 Weeks | 1.437803g | 165mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 3W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 130ns | 100 ns | 30 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 3W Ta 136W Tc | 20A | N-Channel | 1950pF @ 25V | 165m Ω @ 14A, 10V | 4V @ 250μA | 17A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIA850DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia850djt1ge3-datasheets-9719.pdf | PowerPAK® SC-70-6 Dual | 6 | 6 | yes | EAR99 | No | e3 | MATTE TIN | C BEND | 260 | 6 | 40 | 7W | 1 | FET General Purpose Power | 10 ns | 15ns | 15 ns | 25 ns | 950mA | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.9W Ta 7W Tc | 0.95A | 190V | N-Channel | 90pF @ 100V | 3.8 Ω @ 360mA, 4.5V | 1.4V @ 250μA | 950mA Tc | 4.5nC @ 10V | Schottky Diode (Isolated) | 1.8V 4.5V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| SIB408DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib408dkt1ge3-datasheets-9779.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | Lead Free | 3 | 15 Weeks | 95.991485mg | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | 40 | 2.4W | 1 | FET General Purpose Power | R-PDSO-N3 | 13 ns | 11ns | 9 ns | 13 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 6A | 20A | 0.04Ohm | 5 mJ | 30V | N-Channel | 350pF @ 15V | 40m Ω @ 6A, 10V | 2.5V @ 250μA | 7A Tc | 9.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI1406DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1406dht1ge3-datasheets-1976.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | Unknown | 65mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 40 | 1W | 1 | FET General Purpose Powers | 155pF | 27 ns | 47ns | 29 ns | 54 ns | 3.1A | 8V | SILICON | SWITCHING | 450mV | 1W Ta | 20V | N-Channel | 450 mV | 65m Ω @ 3.9A, 4.5V | 1.2V @ 250μA | 3.1A Ta | 7.5nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SIHB22N60S-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb22n60se3-datasheets-9796.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | Unknown | 190mOhm | 3 | yes | No | GULL WING | 260 | 4 | Single | 40 | 250W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 68ns | 59 ns | 77 ns | 22A | 20V | DRAIN | SWITCHING | 2V | 250W Tc | 65A | 690 mJ | 600V | N-Channel | 2810pF @ 25V | 190m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIE876DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie876dft1ge3-datasheets-9833.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 22 ns | 10ns | 10 ns | 25 ns | 60mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 5.2W Ta 125W Tc | 22A | 60A | 60V | N-Channel | 3100pF @ 30V | 6.1m Ω @ 20A, 10V | 4.4V @ 250μA | 60A Tc | 77nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI5855CDC-T1-E3 | Vishay Siliconix | $0.08 |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5855cdct1e3-datasheets-9830.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 1.9W | 1 | 11 ns | 34ns | 34 ns | 22 ns | -3.7A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 1.3W Ta 2.8W Tc | 2.5A | -20V | P-Channel | 276pF @ 10V | 144m Ω @ 2.5A, 4.5V | 1V @ 250μA | 3.7A Tc | 6.8nC @ 5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SUP90N06-5M0P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Strip | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup90n065m0pe3-datasheets-9886.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | 23 ns | 15ns | 8 ns | 36 ns | 90A | 20V | 60V | SILICON | DRAIN | SWITCHING | 3.75W Ta 300W Tc | TO-220AB | 240A | 0.005Ohm | 245 mJ | N-Channel | 6190pF @ 30V | 5m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI4410BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4410bdyt1e3-datasheets-9808.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 186.993455mg | Unknown | 13.5mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.4W | 1 | FET General Purpose Powers | 10 ns | 10ns | 10 ns | 40 ns | 7.5A | 20V | SILICON | SWITCHING | 1V | 1.4W Ta | 30V | N-Channel | 1 V | 13.5m Ω @ 10A, 10V | 3V @ 250μA | 7.5A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SUD45P03-10-E3 | Vishay Siliconix | $1.12 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud45p0310e3-datasheets-9915.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 10mOhm | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 20 | 4W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 15 ns | 375ns | 140 ns | 100 ns | -15A | 20V | -30V | SILICON | DRAIN | 30V | -3V | 4W Ta 70W Tc | P-Channel | 6000pF @ 25V | -1 V | 10m Ω @ 15A, 10V | 3V @ 250μA | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIE726DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie726dft1e3-datasheets-3160.pdf | 10-PolarPAK® (L) | Lead Free | 4 | 3.3mOhm | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 60 ns | 10ns | 10 ns | 55 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 60A | 80A | 125 mJ | 30V | N-Channel | 7400pF @ 15V | 2.4m Ω @ 25A, 10V | 3V @ 250μA | 60A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SUM110N03-04P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0304pe3-datasheets-9890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 12ns | 10 ns | 40 ns | 110A | 20V | SILICON | SWITCHING | 1V | 3.75W Ta 120W Tc | 0.0042Ohm | 30V | N-Channel | 5100pF @ 25V | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 110A Tc | 60nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUD50N02-06P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud50n0206pe3-datasheets-9904.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 15 Weeks | 1.437803g | 6mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 6.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 10ns | 9 ns | 24 ns | 26A | 20V | 20V | SILICON | DRAIN | SWITCHING | 6.8W Ta 65W Tc | 20V | N-Channel | 2550pF @ 10V | 3 V | 6m Ω @ 20A, 10V | 3V @ 250μA | 50A Tc | 30nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFZ44STRRPBF | Vishay Siliconix | $2.79 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz44spbf-datasheets-3540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 1.437803g | 8 | yes | EAR99 | No | GULL WING | 260 | 4 | 1 | Single | 40 | 1 | R-PSSO-G2 | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | SILICON | SWITCHING | 3.7W Ta 150W Tc | 200A | 60V | N-Channel | 1900pF @ 25V | 28m Ω @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHF22N60S-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf22n60se3-datasheets-0345.pdf | TO-220-3 Full Pack | Lead Free | 3 | 17 Weeks | Unknown | 190mOhm | 3 | yes | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 250W | 1 | FET General Purpose Power | 24 ns | 68ns | 59 ns | 77 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2V | 250W Tc | TO-220AB | 65A | 690 mJ | 600V | N-Channel | 2810pF @ 25V | 190m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | ||||||||||||||||||||||||||||||||||||||||
| SIS436DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis436dnt1ge3-datasheets-9936.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 13 Weeks | 4.5mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 15 ns | 12ns | 10 ns | 15 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 3.5W Ta 27.7W Tc | 32A | N-Channel | 855pF @ 10V | 10.5m Ω @ 10A, 10V | 2.3V @ 250μA | 16A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIR808DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir808dpt1ge3-datasheets-2044.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-C5 | 5 ns | 10ns | 7 ns | 14 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 1V | 29.8W Tc | 50A | 22 mJ | 25V | N-Channel | 815pF @ 12.5V | 8.9m Ω @ 17A, 10V | 2.5V @ 250μA | 20A Tc | 22.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SUM50P10-42-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50p1042e3-datasheets-2049.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | SINGLE | GULL WING | 4 | 18.8W | 1 | R-PSSO-G2 | 36A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 100V | 18.8W Ta 125W Tc | 40A | 0.042Ohm | 80 mJ | N-Channel | 4600pF @ 50V | 4.2m Ω @ 14A, 10V | 3V @ 250μA | 36A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SUM120N04-1M7L-GE3 | Vishay Siliconix | $1.51 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum120n041m7lge3-datasheets-2065.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | EAR99 | unknown | SINGLE | GULL WING | 1 | R-PSSO-G2 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 375W Tc | 480A | 0.0017Ohm | 423 mJ | N-Channel | 11685pF @ 20V | 17m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 285nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-12P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0312pge3-datasheets-2078.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | Tin | 1 | Single | TO-252 | 1.6nF | 9 ns | 15ns | 12 ns | 20 ns | 17.5A | 20V | 30V | 39W Tc | 12mOhm | 30V | N-Channel | 1600pF @ 25V | 17mOhm @ 20A, 10V | 3V @ 250μA | 16.8A Ta | 42nC @ 10V | 17 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM25P10-138-E3 | Vishay Siliconix | $9.55 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum25p10138e3-datasheets-2086.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | No SVHC | 3 | EAR99 | unknown | SINGLE | GULL WING | 1 | R-PSSO-G2 | 16.7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 100V | 100V | 3.75W Ta 88.2W Tc | 40A | 0.142Ohm | N-Channel | 2110pF @ 25V | 13.8m Ω @ 6A, 10V | 4V @ 250μA | 16.7A Tc | 60nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N02-09P-GE3 | Vishay Siliconix | $2.76 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0209pge3-datasheets-2090.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.437803g | 8kOhm | 3 | No | 1 | 8 ns | 10ns | 12 ns | 25 ns | 20A | 20V | 39.5W Tc | N-Channel | 1300pF @ 10V | 14m Ω @ 20A, 10V | 3V @ 250μA | 20A Ta | 16nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD45P04-16P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud45p0416pge3-datasheets-2151.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 13 Weeks | 3 | EAR99 | No | GULL WING | 4 | 1 | Single | 2.1W | 1 | Other Transistors | R-PSSO-G2 | 10 ns | 20ns | 20 ns | 42 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 2.1W Ta 41.7W Tc | P-Channel | 2765pF @ 20V | 16.2m Ω @ 14A, 20V | 2.5V @ 250μA | 36A Tc | 100nC @ 10V | 4.5V 10V | ±20V |
