Vishay Siliconix(12746)

Name	Manufacturer	Pricing(USD)	Quantity	Part Status	Series	Mount	Mounting Type	Operating Temperature	Packaging	Moisture Sensitivity Level (MSL)	Max Operating Temperature	Min Operating Temperature	Technology	Operating Mode	RoHS Status	Published	Datasheet	Package / Case	Length	Height	Width	Lead Free	Number of Terminations	Factory Lead Time	Weight	REACH SVHC	Resistance	Number of Pins	Pbfree Code	ECCN Code	Additional Feature	Contact Plating	Radiation Hardening	Reach Compliance Code	HTS Code	JESD-609 Code	Terminal Finish	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Pin Count	Number of Channels	Element Configuration	Time@Peak Reflow Temperature-Max (s)	Power Dissipation	Number of Elements	Subcategory	Qualification Status	JESD-30 Code	Supplier Device Package	Input Capacitance	Turn On Delay Time	Rise Time	Fall Time (Typ)	Turn-Off Delay Time	Continuous Drain Current (ID)	Gate to Source Voltage (Vgs)	Transistor Element Material	Configuration	Case Connection	Transistor Application	Drain to Source Voltage (Vdss)	DS Breakdown Voltage-Min	Threshold Voltage	Power Dissipation-Max	JEDEC-95 Code	Drain Current-Max (Abs) (ID)	Pulsed Drain Current-Max (IDM)	Drain-source On Resistance-Max	Drain to Source Resistance	Feedback Cap-Max (Crss)	Avalanche Energy Rating (Eas)	Drain to Source Breakdown Voltage	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Nominal Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On Max	Drive Voltage (Max Rds On,Min Rds On)	Vgs (Max)
SI5411EDU-T1-GE3	Vishay Siliconix		RFQ Min: 1 Mult: 1	download	TrenchFET®	Surface Mount	Surface Mount	-50°C~150°C TJ	Tape & Reel (TR)	1 (Unlimited)			MOSFET (Metal Oxide)		ROHS3 Compliant	2016	/files/vishaysiliconix-si5411edut1ge3-datasheets-8742.pdf	PowerPAK® ChipFET™ Single				Lead Free		19 Weeks						EAR99							Pure Matte Tin (Sn)				260		1	Single	30								30 ns	30ns	35 ns	70 ns	25A	8V					12V			3.1W Ta 31W Tc								-12V	P-Channel	4100pF @ 6V		8.2m Ω @ 6A, 4.5V	900mV @ 250μA	25A Tc	105nC @ 8V		1.8V 4.5V	±8V
SIR646DP-T1-GE3	Vishay Siliconix		RFQ Min: 1 Mult: 1	download	TrenchFET®		Surface Mount	-55°C~150°C TJ	Tape & Reel (TR)	1 (Unlimited)			MOSFET (Metal Oxide)		ROHS3 Compliant	2011	https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir646dpt1ge3-datasheets-9225.pdf	PowerPAK® SO-8																unknown																													40V			5W Ta 54W Tc									N-Channel	2230pF @ 20V		3.8m Ω @ 20A, 10V	2.2V @ 250μA	60A Tc	51nC @ 10V		4.5V 10V	±20V
2N6660-E3	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Bulk	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2007	/files/vishaysiliconix-2n6660e3-datasheets-9278.pdf	TO-205AD, TO-39-3 Metal Can	9.4mm	6.6mm	8.15mm		3	9 Weeks		Unknown		3	yes	EAR99	LOW THRESHOLD	Tin	No			e3			BOTTOM	WIRE	260	2	1	Single	40	725mW	1	FET General Purpose Powers									1.1A	20V	SILICON			AMPLIFIER			1.7V	725mW Ta 6.25W Tc		0.99A		3Ohm				60V	N-Channel	50pF @ 25V	1.7 V	3 Ω @ 1A, 10V	2V @ 1mA	990mA Tc			5V 10V	±20V
SIB410DK-T1-GE3	Vishay Siliconix		RFQ Min: 1 Mult: 1	download	TrenchFET®	Surface Mount	Surface Mount	-55°C~150°C TJ	Tape & Reel (TR)	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2012	/files/vishaysiliconix-sib410dkt1ge3-datasheets-9115.pdf	PowerPAK® SC-75-6L				Lead Free	3	15 Weeks	95.991485mg	Unknown		6	yes	EAR99			No			e3	MATTE TIN		DUAL	C BEND	260	6	1	Single	40	2.5W	1	FET General Purpose Power		S-XDSO-C3			6 ns	10ns	10 ns	20 ns	9A	8V	SILICON		DRAIN	SWITCHING			400mV	2.5W Ta 13W Tc		9A	20A	0.042Ohm				30V	N-Channel	560pF @ 15V		42m Ω @ 3.8A, 4.5V	1V @ 250μA	9A Tc	15nC @ 8V		1.8V 4.5V	±8V
SI4038DY-T1-GE3	Vishay Siliconix		RFQ Min: 1 Mult: 1	download	TrenchFET®	Surface Mount	Surface Mount	-55°C~150°C TJ	Tape & Reel (TR)	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2015	https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4038dyt1ge3-datasheets-9275.pdf	8-SOIC (0.154, 3.90mm Width)					8		506.605978mg	Unknown		8		EAR99			No			e3	Matte Tin (Sn)		DUAL	GULL WING			1				1						13 ns	14ns	10 ns	14 ns	42.5A	20V	SILICON	SINGLE WITH BUILT-IN DIODE		SWITCHING				3.5W Ta 7.8W Tc				0.0024Ohm				40V	N-Channel	4070pF @ 20V		2.4m Ω @ 15A, 10V	2.1V @ 250μA	42.5A Tc	87nC @ 10V		4.5V 10V	±20V
2N6661JTXL02	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2012	https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf	TO-205AD, TO-39-3 Metal Can					3					3	no	EAR99	LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE				8541.21.00.95				BOTTOM	WIRE	NOT SPECIFIED	2			NOT SPECIFIED		1	FET General Purpose Powers	Not Qualified								860mA	20V	SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	90V	90V		725mW Ta 6.25W Tc		0.86A		4Ohm		10 pF			N-Channel	50pF @ 25V		4 Ω @ 1A, 10V	2V @ 1mA	860mA Tc			5V 10V	±20V
3N163-2	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2009	https://pdf.utmel.com/r/datasheets/vishaysiliconix-3n1632-datasheets-9363.pdf	TO-206AF, TO-72-4 Metal Can					4							EAR99		Lead, Tin		unknown	8541.21.00.95				BOTTOM	WIRE							1		Not Qualified	O-MBCY-W4			5 ns	13ns		25 ns	50mA	30V	SILICON	SINGLE	SUBSTRATE		40V	40V		375mW Ta		0.05A		300Ohm		0.7 pF			P-Channel	3.5pF @ 15V		250 Ω @ 100μA, 20V	5V @ 10μA	50mA Ta			20V	±30V
2N6661JTXV02	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2016	/files/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf	TO-205AD, TO-39-3 Metal Can					3					3	no	EAR99	LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE		No						BOTTOM	WIRE		2				725mW	1	FET General Purpose Powers									860mA	20V	SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	90V	90V		725mW Ta 6.25W Tc		0.86A		4Ohm					N-Channel	50pF @ 25V		4 Ω @ 1A, 10V	2V @ 1mA	860mA Tc			5V 10V	±20V
3N163	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2005	/files/vishaysiliconix-3n1632-datasheets-9363.pdf	TO-206AF, TO-72-4 Metal Can	5.84mm	5.33mm	5.84mm							4	no				No			e0	Tin/Lead (Sn/Pb)					8	1	Single		375mW		Other Transistors					5 ns	13ns		25 ns	50mA	30V					40V			375mW Ta		0.05A						-40V	P-Channel	3.5pF @ 15V		250 Ω @ 100μA, 20V	5V @ 10μA	50mA Ta			20V	±30V
2N6660JTXL02	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf	TO-205AD, TO-39-3 Metal Can					3					3		EAR99									BOTTOM	WIRE		2				725mW	1	FET General Purpose Powers									990mA	20V	SILICON	SINGLE WITH BUILT-IN DIODE		AMPLIFIER	60V	60V		725mW Ta 6.25W Tc		0.99A		3Ohm					N-Channel	50pF @ 25V		3 Ω @ 1A, 10V	2V @ 1mA	990mA Tc			5V 10V	±20V
2N6661	Vishay Siliconix	$16.59	RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)	150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf	TO-205AD, TO-39-3 Metal Can	9.4mm	6.6mm	8.15mm							3				Lead, Tin	No										1	Single		6.25W	1				TO-39	50pF					860mA	20V					90V			725mW Ta 6.25W Tc					4Ohm			90V	N-Channel	50pF @ 25V		4Ohm @ 1A, 10V	2V @ 1mA	860mA Tc		4 Ω	5V 10V	±20V
2N6661JTXP02	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2012	https://pdf.utmel.com/r/datasheets/vishay-2n6661jtxp02-datasheets-9343.pdf	TO-205AD, TO-39-3 Metal Can					3	36 Weeks				3	no	EAR99	LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE			unknown	8541.21.00.95				BOTTOM	WIRE	NOT SPECIFIED	2			NOT SPECIFIED		1	FET General Purpose Powers	Not Qualified								860mA	20V	SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	90V	90V		725mW Ta 6.25W Tc		0.86A		4Ohm		10 pF			N-Channel	50pF @ 25V		4 Ω @ 1A, 10V	2V @ 1mA	860mA Tc			5V 10V	±20V
2N6661JAN02	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)		Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf	TO-205AD, TO-39-3 Metal Can										3																													860mA	20V					90V			725mW Ta 6.25W Tc									N-Channel	50pF @ 25V		4 Ω @ 1A, 10V	2V @ 1mA	860mA Tc			5V 10V	±20V
SIHB30N60E-E3	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Surface Mount	Surface Mount	-55°C~150°C TJ	Tape & Reel (TR)	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb30n60ee3-datasheets-9414.pdf	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2		1.437803g			3			AVALANCHE RATED		No							GULL WING		3	1	Single		250W	1			R-PSSO-G2			19 ns	32ns	36 ns	63 ns	29A	20V	SILICON			SWITCHING				250W Tc			65A				690 mJ	600V	N-Channel	2600pF @ 100V		125m Ω @ 15A, 10V	4V @ 250μA	29A Tc	130nC @ 10V		10V	±30V
2N6660JTXV02	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2009	https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf	TO-205AD, TO-39-3 Metal Can					3					3		EAR99			No						BOTTOM	WIRE		2				725mW	1	FET General Purpose Powers									990mA	20V	SILICON	SINGLE WITH BUILT-IN DIODE		AMPLIFIER	60V	60V		725mW Ta 6.25W Tc		0.99A		3Ohm					N-Channel	50pF @ 25V		3 Ω @ 1A, 10V	2V @ 1mA	990mA Tc			5V 10V	±20V
SIHW47N65E-GE3	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2014	https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw47n65ege3-datasheets-9424.pdf	TO-247-3					3	19 Weeks	38.000013g			3					No										1	Single		417W	1						47 ns	87ns	103 ns	156 ns	47A	20V	SILICON			SWITCHING	650V	650V		417W Tc	TO-247AD			0.072Ohm					N-Channel	5682pF @ 100V		72m Ω @ 24A, 10V	4V @ 250μA	47A Tc	273nC @ 10V		10V	±20V
2N6661-2	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2014	https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf	TO-205AD, TO-39-3 Metal Can	9.4mm	6.6mm	8.15mm	Contains Lead	3	26 Weeks			4Ohm	3	no	EAR99	LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE	Lead, Tin	No						BOTTOM	WIRE		2	1	Single		725mW	1	FET General Purpose Powers									860mA	20V	SILICON		DRAIN	SWITCHING	90V	90V		725mW Ta 6.25W Tc		0.86A							N-Channel	50pF @ 25V		4 Ω @ 1A, 10V	2V @ 1mA	860mA Tc			5V 10V	±20V
SI8809EDB-T2-E1	Vishay Siliconix		RFQ Min: 1 Mult: 1	download	TrenchFET®	Surface Mount	Surface Mount	-55°C~150°C TJ	Tape & Reel (TR)	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2017	https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8809edbt2e1-datasheets-9437.pdf	4-XFBGA				Lead Free	4	15 Weeks				4		EAR99			No				Pure Matte Tin (Sn)		BOTTOM	BALL	260	4	1	Single	30	500mW	1	Other Transistors									-2.6A	8V	SILICON			SWITCHING	20V	20V		500mW Ta									P-Channel			90m Ω @ 1.5A, 4.5V	900mV @ 250μA		15nC @ 8V		1.8V 4.5V	±8V
IRFD9123	Vishay Siliconix	$0.59	RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole		Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2015		4-DIP (0.300, 7.62mm)				Contains Lead	3		639.990485mg			4		EAR99				unknown				1.3W	DUAL			4	1	Single			1		Not Qualified	R-PDIP-T3							1A	4V	SILICON		DRAIN		100V				TO-250AA	0.8A		0.8Ohm				-100V	P-Channel	390pF @ 25V		600m Ω @ 600mA, 10V	4V @ 250μA	1A Ta	18nC @ 10V
2N6661-E3	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)	150°C	-55°C	MOSFET (Metal Oxide)		ROHS3 Compliant	2014	https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf	TO-205AD, TO-39-3 Metal Can	9.4mm	6.6mm	8.15mm	Lead Free						3				Tin	No										1	Single		725mW	1				TO-39	50pF					860mA	20V					90V			725mW Ta 6.25W Tc					4Ohm			90V	N-Channel	50pF @ 25V		4Ohm @ 1A, 10V	2V @ 1mA	860mA Tc		4 Ω	5V 10V	±20V
2N6661JTX02	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf	TO-205AD, TO-39-3 Metal Can				Contains Lead	3					3	no	EAR99	LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE		No						BOTTOM	WIRE		2				725mW	1	FET General Purpose Powers									860mA	20V	SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	90V	90V		725mW Ta 6.25W Tc		0.86A		4Ohm					N-Channel	50pF @ 25V		4 Ω @ 1A, 10V	2V @ 1mA	860mA Tc			5V 10V	±20V
3N164	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant		/files/vishaysiliconix-3n1632-datasheets-9363.pdf	TO-206AF, TO-72-4 Metal Can										4	no			Lead, Tin		unknown		e0	Tin/Lead (Sn/Pb)					8		Single		375mW	1	Other Transistors					5 ns	13ns		25 ns	-50mA	30V								375mW Ta		0.05A						-30V	P-Channel	3.5pF @ 15V		300 Ω @ 100μA, 20V	5V @ 10μA	50mA Ta			20V	±30V
3N163-E3	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Bulk	1 (Unlimited)	150°C	-55°C	MOSFET (Metal Oxide)		ROHS3 Compliant	2000	https://pdf.utmel.com/r/datasheets/vishaysiliconix-3n1632-datasheets-9363.pdf	TO-206AF, TO-72-4 Metal Can				Lead Free				Unknown	250Ohm	4				Tin	No										1	Single		375mW					TO-72	3.5pF	5 ns	13ns		25 ns	-50mA	30V					40V		-2.5V	375mW Ta					250Ohm			-40V	P-Channel	3.5pF @ 15V	-2.5 V	250Ohm @ 100μA, 20V	5V @ 10μA	50mA Ta		250 Ω	20V	±30V
2N6660JTX02	Vishay Siliconix		RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf	TO-205AD, TO-39-3 Metal Can				Contains Lead	3					3		EAR99			No						BOTTOM	WIRE		2				725mW	1	FET General Purpose Powers									990mA	20V	SILICON	SINGLE WITH BUILT-IN DIODE		AMPLIFIER	60V	60V		725mW Ta 6.25W Tc		0.99A		3Ohm					N-Channel	50pF @ 25V		3 Ω @ 1A, 10V	2V @ 1mA	990mA Tc			5V 10V	±20V
IRFPS40N60K	Vishay Siliconix	$5.83	RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)	150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2017	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps40n60kpbf-datasheets-5634.pdf	TO-274AA	16.1mm	20.8mm	5.3mm				38.000013g			3					No										1	Single		570W					SUPER-247™ (TO-274AA)	7.97nF	47 ns	110ns	60 ns	97 ns	40A	30V					600V			570W Tc					130mOhm			600V	N-Channel	7970pF @ 25V		130mOhm @ 24A, 10V	5V @ 250μA	40A Tc	330nC @ 10V	130 mΩ	10V	±30V
SIR482DP-T1-GE3	Vishay Siliconix		RFQ Min: 1 Mult: 1	download	TrenchFET®	Surface Mount	Surface Mount	-55°C~150°C TJ	Tape & Reel (TR)	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir482dpt1ge3-datasheets-9469.pdf	PowerPAK® SO-8					5		506.605978mg					EAR99			No			e3	MATTE TIN		DUAL	C BEND	260	8	1	Single	40		1	FET General Purpose Powers		R-PDSO-C5							35A	20V	SILICON		DRAIN	SWITCHING	30V	30V		5W Ta 27.7W Tc			70A	0.0075Ohm			20 mJ		N-Channel	1575pF @ 15V		5.6m Ω @ 20A, 10V	2.3V @ 250μA	35A Tc	38nC @ 10V		4.5V 10V	±20V
IRFP21N60L	Vishay Siliconix		RFQ Min: 1 Mult: 1	download			Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)		Non-RoHS Compliant	2016	/files/vishaysiliconix-irfp21n60l-datasheets-9473.pdf	TO-247-3																																	TO-247-3												600V			330W Tc									N-Channel	4000pF @ 25V		320mOhm @ 13A, 10V	5V @ 250μA	21A Tc	150nC @ 10V		10V	±30V
IRFP22N60K	Vishay Siliconix	$1.26	RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)	150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2017	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp22n60kpbf-datasheets-2968.pdf	TO-247-3	15.87mm	20.7mm	5.31mm				38.000013g			3					No										1	Single		370W					TO-247-3	3.57nF	26 ns	99ns	37 ns	48 ns	22A	30V					600V			370W Tc					280mOhm			600V	N-Channel	3570pF @ 25V		280mOhm @ 13A, 10V	5V @ 250μA	22A Tc	150nC @ 10V	280 mΩ	10V	±30V
IRFD113	Vishay Siliconix	$0.90	RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)			MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd113pbf-datasheets-5477.pdf	4-DIP (0.300, 7.62mm)					2					4		EAR99				unknown					DUAL		NOT SPECIFIED	2	1	Single	NOT SPECIFIED		1	FET General Purpose Power		R-PDIP-T2							800mA		SILICON		DRAIN	SWITCHING	60V	60V		1W Tc		0.8A		0.8Ohm		25 pF			N-Channel	200pF @ 25V		800m Ω @ 800mA, 10V	4V @ 250μA	800mA Tc	7nC @ 10V		10V	±20V
2N6660-2	Vishay Siliconix	$25.03	RFQ Min: 1 Mult: 1	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)	150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf	TO-205AD, TO-39-3 Metal Can										3					No													725mW	1				TO-205AD (TO-39)	50pF					990mA	20V					60V			725mW Ta 6.25W Tc									N-Channel	50pF @ 25V		3Ohm @ 1A, 10V	2V @ 1mA	990mA Tc		3 Ω	5V 10V	±20V

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