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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUD23N06-31L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud23n0631lt4e3-datasheets-7979.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | 1.437803g | No SVHC | 31mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 15ns | 25 ns | 30 ns | 23A | 20V | 60V | SILICON | DRAIN | SWITCHING | 2V | 3W Ta 100W Tc | 50A | 20 mJ | 60V | N-Channel | 670pF @ 25V | 2 V | 31m Ω @ 15A, 10V | 3V @ 250μA | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SIR640DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir640dpt1ge3-datasheets-2960.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | YES | DUAL | C BEND | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 6.25W Ta 104W Tc | 60A | 100A | 0.0022Ohm | 80 mJ | N-Channel | 4930pF @ 20V | 1.7m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 113nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SUD40N04-10A-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud40n0410ae3-datasheets-2968.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | Lead Free | 2 | 10mOhm | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 71W | 1 | FET General Purpose Power | 14 ns | 7.5ns | 14 ns | 30 ns | 40A | 20V | SILICON | DRAIN | 71W Tc | 40V | N-Channel | 1700pF @ 25V | 10m Ω @ 40A, 10V | 3V @ 250μA | 40A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUP75N03-04-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sup75n0304e3-datasheets-3010.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 187W | 1 | FET General Purpose Power | 20 ns | 40ns | 95 ns | 190 ns | 75A | 20V | SILICON | DRAIN | 3.7W Ta 187W Tc | TO-220AB | 250A | 0.006Ohm | 280 mJ | 30V | N-Channel | 10742pF @ 25V | 4m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 250nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUD50N03-09P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud50n0309pge3-datasheets-3255.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 1.437803g | 9.5MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 7.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 15ns | 8 ns | 22 ns | 63A | 20V | SILICON | DRAIN | SWITCHING | 7.5W Ta 65.2W Tc | 50A | 50A | 30V | N-Channel | 2200pF @ 25V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 63A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SUM110N05-06L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | Digi-Reel® | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110n0506le3-datasheets-3043.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.414mm | 4.826mm | 9.652mm | Lead Free | 2 | No SVHC | 6mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 36W | GULL WING | 4 | Single | 3.7W | 1 | FET General Purpose Powers | R-PSSO-G2 | 15 ns | 15ns | 15 ns | 35 ns | 110A | 20V | 55V | SWITCHING | 70 ns | 240A | 55V | N-Channel | 3300pF @ 25V | 3 V | 6m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 100nC @ 10V | |||||||||||||||||||||||||||||||||||
| SUD50P04-13L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud50p0413lge3-datasheets-4867.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 13mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 93.7mW | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 10ns | 20 ns | 50 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | -3V | 3W Ta 93.7W Tc | 50A | 80 mJ | 40V | P-Channel | 3120pF @ 25V | 13m Ω @ 30A, 10V | 3V @ 250μA | 60A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SUD50P04-15-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0415e3-datasheets-3027.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 26 Weeks | 1.437803g | No SVHC | 15mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 100W | 1 | Other Transistors | R-PSSO-G2 | 15 ns | 380ns | 140 ns | 75 ns | -50A | 20V | SILICON | DRAIN | 40V | -1V | 3W Ta 100W Tc | -40V | P-Channel | 5400pF @ 25V | -1 V | 15m Ω @ 30A, 10V | 1V @ 250μA (Min) | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SUP70N03-09BP-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70n0309bpe3-datasheets-3111.pdf | TO-220-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 93W | 1 | FET General Purpose Power | 10 ns | 8ns | 9 ns | 25 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 93W Tc | TO-220AB | 70A | 200A | 0.009Ohm | 30V | N-Channel | 1500pF @ 25V | 800 mV | 9m Ω @ 30A, 10V | 2V @ 250μA | 70A Tc | 19nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI4836DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4836dyt1ge3-datasheets-6582.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 3mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | FET General Purpose Power | 860pF | 35 ns | 41ns | 115 ns | 190 ns | 17A | 8V | SILICON | SWITCHING | 1.6W Ta | 12V | N-Channel | 3m Ω @ 25A, 4.5V | 400mV @ 250μA (Min) | 17A Ta | 75nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SI4404DY-T1-E3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4404dyt1ge3-datasheets-6289.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 6.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | 2nF | 20 ns | 15ns | 40 ns | 105 ns | 23A | 20V | SILICON | 1.6W Ta | 30V | N-Channel | 1 V | 6.5m Ω @ 23A, 10V | 3V @ 250μA | 15A Ta | 55nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI2335DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2335dst1ge3-datasheets-6121.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Unknown | 51mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 30 | 750mW | 1 | Other Transistors | 13 ns | 15ns | 15 ns | 50 ns | -4A | 8V | SILICON | 12V | 750mW Ta | -12V | P-Channel | 1225pF @ 6V | -450 mV | 51m Ω @ 4A, 4.5V | 450mV @ 250μA (Min) | 3.2A Ta | 15nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SI2305ADS-T1-E3 | Vishay Siliconix | $1.28 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2305adst1ge3-datasheets-0154.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 40mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 3 | Single | 30 | 1 | Other Transistors | 11ns | 11 ns | 22 ns | 4.1A | 8V | SILICON | SWITCHING | 960mW Ta 1.7W Tc | 5.4A | -8V | P-Channel | 740pF @ 4V | 40m Ω @ 4.1A, 4.5V | 800mV @ 250μA | 5.4A Tc | 15nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SI4860DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4860dyt1ge3-datasheets-6401.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.6W | 1 | FET General Purpose Powers | 4.5nF | 18 ns | 12ns | 12 ns | 46 ns | 16A | 20V | SILICON | SWITCHING | 1V | 1.6W Ta | 30V | N-Channel | 1 V | 8m Ω @ 16A, 10V | 1V @ 250μA (Min) | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI4401DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4401dyt1ge3-datasheets-6298.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 506.605978mg | No SVHC | 15.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 17 ns | 18ns | 55 ns | 122 ns | -10.5A | 20V | SILICON | 40V | 40V | -1V | 1.5W Ta | P-Channel | -1 V | 15.5m Ω @ 10.5A, 10V | 1V @ 250μA (Min) | 8.7A Ta | 50nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI3445ADV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3445advt1ge3-datasheets-6097.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 42mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 40 | 1.1W | 1 | Other Transistors | 260pF | 20 ns | 40ns | 60 ns | 80 ns | 4.4A | 8V | SILICON | 1.1W Ta | -8V | P-Channel | 42m Ω @ 5.8A, 4.5V | 1V @ 250μA | 4.4A Ta | 19nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| SI4412ADY-T1-E3 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4412adyt1ge3-datasheets-6274.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 24mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.3W | 1 | 15 ns | 6ns | 6 ns | 26 ns | 5.8A | 20V | SILICON | 1.3W Ta | 30A | 30V | N-Channel | 24m Ω @ 8A, 10V | 1V @ 250μA (Min) | 5.8A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI4888DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4888dyt1ge3-datasheets-6431.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | Unknown | 7mOhm | 8 | No | Single | 1.6W | 1 | 8-SO | 14 ns | 10ns | 10 ns | 44 ns | 16A | 20V | 30V | 1.6W Ta | 7mOhm | 30V | N-Channel | 800 mV | 7mOhm @ 16A, 10V | 1.6V @ 250μA | 11A Ta | 24nC @ 5V | 7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SUP75P05-08-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sup75p0508e3-datasheets-3242.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 3 | Single | 30 | 250W | 1 | Other Transistors | Not Qualified | 13 ns | 140ns | 175 ns | 115 ns | -75A | 20V | SILICON | DRAIN | 55V | -2V | 3.7W Ta 250W Tc | TO-220AB | 240A | 0.008Ohm | 30V | P-Channel | 8500pF @ 25V | -2 V | 8m Ω @ 30A, 10V | 3V @ 250μA | 75A Tc | 225nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SUP40N10-30-E3 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup40n1030e3-datasheets-3260.pdf | TO-220-3 | Lead Free | 3 | 30mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | FET General Purpose Power | 11 ns | 12ns | 12 ns | 30 ns | 40A | 20V | SILICON | SWITCHING | 3.75W Ta 107W Tc | TO-220AB | 75A | 100V | N-Channel | 2400pF @ 25V | 30m Ω @ 15A, 10V | 4V @ 250μA | 40A Tc | 60nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI1405DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1405dlt1ge3-datasheets-6027.pdf | 6-TSSOP, SC-88, SOT-363 | 2.3876mm | 990.6μm | 1.3462mm | Lead Free | 125mOhm | 6 | No | Single | 568mW | SC-70-6 (SOT-363) | 8 ns | 36ns | 36 ns | 33 ns | 1.6A | 8V | 8V | 568mW Ta | 210mOhm | 8V | P-Channel | 125mOhm @ 1.8A, 4.5V | 450mV @ 250μA (Min) | 1.6A Ta | 7nC @ 4.5V | 54 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI1307DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1307dlt1ge3-datasheets-6164.pdf | SC-70, SOT-323 | 2.1844mm | 990.6μm | 1.3462mm | Lead Free | 3 | 290mOhm | 3 | yes | EAR99 | 68A | unknown | e3 | MATTE TIN | 12V | DUAL | GULL WING | 260 | 3 | Single | 40 | 290mW | 1 | Not Qualified | 7.5 ns | 32ns | 32 ns | 17 ns | 850mA | 8V | SILICON | 290mW Ta | -12V | P-Channel | 290m Ω @ 1A, 4.5V | 450mV @ 250μA (Min) | 850mA Ta | 5nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SI1011X-T1-GE3 | Vishay Siliconix | $1.40 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1011xt1ge3-datasheets-3456.pdf | SC-89, SOT-490 | Lead Free | 3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 190mW | 1 | 480mA | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 190mW Ta | 0.64Ohm | P-Channel | 62pF @ 6V | 640m Ω @ 400mA, 4.5V | 800mV @ 250μA | 4nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7860DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7860dpt1ge3-datasheets-3692.pdf | PowerPAK® SO-8 | 5.969mm | 1.0668mm | 5.0038mm | Lead Free | 5 | No SVHC | 8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 3.45nF | 18 ns | 12ns | 12 ns | 46 ns | 18A | 20V | 30V | SILICON | DRAIN | SWITCHING | 3V | 1.8W Ta | 50A | 45 mJ | 30V | N-Channel | 3 V | 8m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SI3445DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3445dvt1ge3-datasheets-6159.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 19.986414mg | No SVHC | 42MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | Other Transistors | 3.15nF | 20 ns | 50ns | 60 ns | 110 ns | 5.6A | 8V | -8V | SILICON | -1V | 2W Ta | 20A | -8V | P-Channel | -1 V | 42m Ω @ 5.6A, 4.5V | 1V @ 250μA | 25nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SIB417AEDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib417aedkt1ge3-datasheets-3636.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 32mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 1 | 2.4W | 1 | Other Transistors | S-PDSO-N3 | 19 ns | 27ns | 29 ns | 32 ns | 9A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 9A | 8V | P-Channel | 878pF @ 4V | 32m Ω @ 3A, 4.5V | 1V @ 250μA | 9A Tc | 18.5nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||
| SUD50N06-07L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0607lge3-datasheets-4822.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 30 | 136W | 1 | FET General Purpose Powers | 15 ns | 13ns | 14 ns | 62 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 136W Tc | 50A | 60V | N-Channel | 5800pF @ 25V | 7.4m Ω @ 20A, 10V | 3V @ 250μA | 96A Tc | 144nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI3460DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3460dvt1ge3-datasheets-6204.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 990.6μm | 1.65mm | Lead Free | 6 | 19.986414mg | 27mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.1W | 1 | FET General Purpose Power | 15 ns | 30ns | 30 ns | 70 ns | 6.8A | 8V | SILICON | 1.1W Ta | 20V | N-Channel | 27m Ω @ 5.1A, 4.5V | 450mV @ 1mA (Min) | 5.1A Ta | 20nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SIA453EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia453edjt1ge3-datasheets-8760.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 15 Weeks | 23.5mOhm | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | DUAL | NO LEAD | 1 | Single | 1 | S-PDSO-N3 | 25 ns | 45ns | 28 ns | 65 ns | 24A | 12V | SILICON | DRAIN | SWITCHING | 30V | 3.5W Ta 19W Tc | 80A | 5 mJ | -30V | P-Channel | 1900pF @ 15V | 18.5m Ω @ 5A, 10V | 1.4V @ 250μA | 24A Tc | 66nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SIR644DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir644dpt1ge3-datasheets-8356.pdf | PowerPAK® SO-8 | 5 | 15 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 5.2W | 1 | R-PDSO-C5 | 13 ns | 5ns | 5 ns | 29 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 69W Tc | 200A | 0.0027Ohm | 40V | N-Channel | 3200pF @ 20V | 2.7m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 71nC @ 10V | 4.5V 10V | ±20V |
