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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VQ1004P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 15 Weeks | 14 | No | 2W | 4 | 460mA | 20V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR814DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir814dpt1ge3-datasheets-9493.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | EAR99 | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 6.25W | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-C5 | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1V | 6.25W Ta 104W Tc | 0.0029Ohm | N-Channel | 3800pF @ 20V | 2.1m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 86nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-06AP-T4E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0306ape3-datasheets-0471.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | TO-252 | 3.8nF | 90A | 30V | 10W Ta 83W Tc | 5.7MOhm | N-Channel | 3800pF @ 15V | 5.7mOhm @ 20A, 10V | 2.4V @ 250μA | 90A Tc | 95nC @ 10V | 5.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1004P | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | CDIP | 19.56mm | 3.05mm | 7.87mm | Lead Free | 14 | no | No | e0 | Tin/Lead (Sn/Pb) | 2W | 14 | 4 | 2W | FET General Purpose Power | 460mA | 20V | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 3.5Ohm | 60V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660JTVP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 18 Weeks | 3 | EAR99 | unknown | 8541.21.00.95 | BOTTOM | WIRE | 2 | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 10 pF | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP1008B | Vishay Siliconix | $43.72 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | Contains Lead | 3 | 51 Weeks | 3 | EAR99 | No | e0 | TIN LEAD | BOTTOM | WIRE | 225 | 2 | 1 | Single | 30 | 1 | 11 ns | 30ns | 20 ns | 20 ns | 790mA | 20V | SILICON | DRAIN | SWITCHING | 6.25W Ta | 0.79A | 5Ohm | 25 pF | 100V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 790mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4752DY-T1-GE3 | Vishay Siliconix | $1.82 |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4752dyt1ge3-datasheets-9507.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | No SVHC | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 30 | 3W | 1 | 18 ns | 15ns | 8 ns | 25 ns | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 3W Ta 6.25W Tc | 0.0055Ohm | 30V | N-Channel | 1700pF @ 15V | 5.5m Ω @ 10A, 10V | 2.2V @ 1mA | 25A Tc | 43nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| VP0808B | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | -280mA | TO-205AD, TO-39-3 Metal Can | 9 Weeks | 3 | No | e0 | Tin/Lead (Sn/Pb) | 2 | 1 | Single | 800mW | Other Transistors | 11 ns | 30ns | 20 ns | 20 ns | 880mA | 30V | 80V | 6.25W Ta | -80V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS38N60L | Vishay Siliconix | $75.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps38n60lpbf-datasheets-4956.pdf | TO-274AA | 15.6mm | 20.3mm | 5mm | 3 | No | 1 | Single | SUPER-247™ (TO-274AA) | 7.99nF | 44 ns | 130ns | 69 ns | 92 ns | 38A | 30V | 600V | 540W Tc | 150mOhm | 600V | N-Channel | 7990pF @ 25V | 150mOhm @ 23A, 10V | 5V @ 250μA | 38A Tc | 320nC @ 10V | 150 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS334DN-T1-GE3 | Vishay Siliconix | $0.55 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis334dnt1ge3-datasheets-9524.pdf | PowerPAK® 1212-8 | 5 | 8 | EAR99 | No | DUAL | C BEND | 8 | 1 | Single | 3.8W | 1 | FET General Purpose Power | S-XDSO-C5 | 9 ns | 10ns | 8 ns | 15 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 50W Tc | 50A | 30V | N-Channel | 640pF @ 15V | 11.3m Ω @ 10A, 10V | 2.4V @ 250μA | 20A Tc | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VP0808B-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | -280mA | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | 3 | 9 Weeks | Unknown | 3 | EAR99 | e3 | MATTE TIN | BOTTOM | WIRE | NOT SPECIFIED | 2 | 1 | Single | NOT SPECIFIED | 1 | Not Qualified | 11 ns | 30ns | 20 ns | 20 ns | -3A | 20V | SILICON | DRAIN | SWITCHING | 80V | 6.25W Ta | 0.88A | 5Ohm | 25 pF | -80V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| VP0300B-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | 13 Weeks | 3 | 800mW | Single | 6.25W | 1 | 150pF | -3A | 20V | 30V | 2.5Ohm | -30V | P-Channel | 150pF @ 15V | 2.5Ohm @ 1A, 12V | 4.5V @ 1mA | 320mA Ta | 2.5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP26N60L | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp26n60lpbf-datasheets-4818.pdf | TO-247-3 | TO-247-3 | 600V | 470W Tc | N-Channel | 5020pF @ 25V | 250mOhm @ 16A, 10V | 5V @ 250μA | 26A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660JTXP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 18 Weeks | 3 | EAR99 | unknown | 8541.21.00.95 | BOTTOM | WIRE | 2 | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 10 pF | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP0808B-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | EAR99 | No | 8541.29.00.75 | BOTTOM | WIRE | 1 | 11 ns | 30ns | 20 ns | 20 ns | 880mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 6.25W Ta | 0.88A | 3A | 5Ohm | 25 pF | P-Channel | 150pF @ 25V | 60ns | 55ns | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS448DN-T1-GE3 | Vishay Siliconix | $3.56 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis448dnt1ge3-datasheets-9595.pdf | PowerPAK® 1212-8 | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | FET General Purpose Powers | S-PDSO-C5 | 35A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.7W Ta 52W Tc | 70A | 0.0056Ohm | 20 mJ | 30V | N-Channel | 1575pF @ 15V | 5.6m Ω @ 10A, 10V | 2.3V @ 250μA | 35A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIS330DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis330dnt1ge3-datasheets-9599.pdf | PowerPAK® 1212-8 | 3.15mm | 1.12mm | 3.15mm | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PDSO-C5 | 16 ns | 19 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.7W Ta 52W Tc | 70A | 0.0056Ohm | 20 mJ | 30V | N-Channel | 1300pF @ 15V | 5.6m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 2N6660 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | Lead Free | 3Ohm | 3 | No | 11A | 60V | 1 | Single | 6.25W | 1 | TO-205AD (TO-39) | 50pF | 1.1A | 20V | 60V | 725mW Ta 6.25W Tc | 3Ohm | 60V | N-Channel | 50pF @ 25V | 3Ohm @ 1A, 10V | 2V @ 1mA | 990mA Tc | 3 Ω | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP53P06-20-GE3 | Vishay Siliconix | $1.00 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup53p0620e3-datasheets-0883.pdf | TO-220-3 | Lead Free | 15 Weeks | 3 | yes | EAR99 | Tin | No | 260 | 30 | 3.1W | 1 | Other Transistors | 10 ns | 7ns | 40 ns | 70 ns | 9.2A | 20V | Single | 60V | 3.1W Ta 104.2W Tc | P-Channel | 3500pF @ 25V | 19.5m Ω @ 30A, 10V | 3V @ 250μA | 9.2A Ta 53A Tc | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1004P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | 14 | 18 Weeks | 14 | EAR99 | No | 8541.29.00.75 | DUAL | 4 | 460mA | 20V | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 0.46A | 2A | 3.5Ohm | 10 pF | 10ns | 10ns | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw23n60ege3-datasheets-0102.pdf | TO-247-3 | 3 | 19 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | SWITCHING | 600V | 227W Tc | TO-247AD | 650V | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP50N10-21P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf830bpbf-datasheets-8569.pdf | TO-220-3 | Lead Free | 3 | 15 Weeks | 6.000006g | 21mOhm | yes | EAR99 | No | e3 | PURE MATTE TIN | 260 | 1 | Single | 30 | 1 | R-PSFM-T3 | 10 ns | 20ns | 14 ns | 22 ns | 50A | 20V | SILICON | SWITCHING | 3.1W Ta 125W Tc | TO-220AB | 60A | 80 mJ | 100V | N-Channel | 2055pF @ 50V | 21m Ω @ 10A, 10V | 4V @ 250μA | 50A Tc | 68nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFD213 | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 4-DIP (0.300, 7.62mm) | 3 | 639.990485mg | 4 | EAR99 | unknown | 1W | DUAL | 4 | 1 | Single | 1 | Not Qualified | R-PDIP-T3 | 450mA | SILICON | 250V | TO-250AA | N-Channel | 140pF @ 25V | 2 Ω @ 270mA, 10V | 4V @ 250μA | 450mA Ta | 8.2nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTVP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | 10 pF | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA34DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira34dpt1ge3-datasheets-0575.pdf | PowerPAK® SO-8 | 5 | 22 Weeks | 506.605978mg | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.3W | 1 | FET General Purpose Power | R-PDSO-C5 | 11 ns | 11ns | 6 ns | 19 ns | 40A | -16V | SILICON | DRAIN | SWITCHING | 3.3W Ta 31.25W Tc | 0.0067Ohm | 5 mJ | 30V | N-Channel | 1100pF @ 15V | 6.7m Ω @ 10A, 10V | 2.4V @ 250μA | 40A Tc | 25nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SUD06N10-225L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/vishaysiliconix-sud06n10225lge3-datasheets-0233.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 1.437803g | No SVHC | 200mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | SUD06N10 | 4 | 1 | Single | 30 | 1 | R-PSSO-G2 | 7 ns | 8ns | 9 ns | 8 ns | 6.5A | 20V | SILICON | DRAIN | 1.25W Ta 16.7W Tc | 8A | 100V | N-Channel | 240pF @ 25V | 200m Ω @ 3A, 10V | 3V @ 250μA | 6.5A Tc | 4nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIR330DP-T1-GE3 | Vishay Siliconix | $3.58 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir330dpt1ge3-datasheets-0546.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 1 | FET General Purpose Power | R-PDSO-C5 | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5W Ta 27.7W Tc | 70A | 0.0056Ohm | 20 mJ | 30V | N-Channel | 1300pF @ 15V | 5.6m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n7002t1e3-datasheets-0519.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 1.437803g | No SVHC | 7.5Ohm | 3 | EAR99 | No | 3A | e3 | Matte Tin (Sn) | 60V | DUAL | GULL WING | 3 | 1 | Single | 200mW | 1 | FET General Purpose Power | 7 ns | 11 ns | 115mA | 20V | 60V | SILICON | 2.1V | 200mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 2 V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI5415EDU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5415edut1ge3-datasheets-1196.pdf | PowerPAK® ChipFET™ Single | 15 Weeks | 8 | EAR99 | No | Single | 45ns | 25 ns | 75 ns | 25A | -1V | 20V | 3.1W Ta 31W Tc | -20V | P-Channel | 4300pF @ 10V | 9.8m Ω @ 10A, 4.5V | 1V @ 250μA | 25A Tc | 120nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2392DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2392dst1ge3-datasheets-1189.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | 68ns | 20 ns | 10 ns | 3.1A | 3V | SILICON | SWITCHING | 1.25W Ta 2.5W Tc | 0.126Ohm | 100V | N-Channel | 196pF @ 50V | 126m Ω @ 2A, 10V | 3V @ 250μA | 3.1A Tc | 10.4nC @ 10V | 4.5V 10V | ±20V |
