| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SUM70N03-09CP-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum70n0309cpe3-datasheets-3441.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 1.437803g | No SVHC | 9.5mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 80ns | 8 ns | 22 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.75W Ta 93W Tc | 30V | N-Channel | 2200pF @ 25V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 70A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SUP90N08-7M7P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup90n087m7pe3-datasheets-3459.pdf | TO-220-3 | 3 | 3 | EAR99 | No | 3 | Single | 3.75W | 1 | FET General Purpose Powers | 17 ns | 5ns | 6 ns | 22 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 3.75W Ta 208.3W Tc | TO-220AB | 0.0077Ohm | 75V | N-Channel | 4250pF @ 30V | 7.7m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SUP40N10-30-GE3 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 | 3 | 3 | EAR99 | No | SINGLE | 3 | 1 | 11 ns | 12ns | 12 ns | 30 ns | 38.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 3.1W Ta 89W Tc | TO-220AB | 75A | 61 mJ | N-Channel | 2400pF @ 25V | 30m Ω @ 15A, 10V | 4V @ 250μA | 38.5A Tc | 60nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SUP65P04-15-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup65p0415e3-datasheets-3513.pdf | TO-220-3 | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | Other Transistors | 15 ns | 380ns | 140 ns | 75 ns | -65A | 20V | SILICON | DRAIN | -3V | 3.75W Ta 120W Tc | TO-220AB | 240A | 40V | P-Channel | 5400pF @ 25V | -3 V | 15m Ω @ 30A, 10V | 3V @ 250μA | 65A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUP75P03-07-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sub75p0307e3-datasheets-7696.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 6.000006g | No SVHC | 7mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | 1 | Single | 187W | 1 | Other Transistors | 25 ns | 225ns | 210 ns | 150 ns | -75A | 20V | SILICON | DRAIN | 30V | -1V | 3.75W Ta 187W Tc | TO-220AB | 240A | -30V | P-Channel | 9000pF @ 25V | -3 V | 7m Ω @ 30A, 10V | 3V @ 250μA | 75A Tc | 240nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIR168DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sir168dpt1ge3-datasheets-3601.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PDSO-C5 | 23 ns | 70ns | 15 ns | 33 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 2.4V | 5W Ta 34.7W Tc | 0.0044Ohm | 30V | N-Channel | 2040pF @ 15V | 2.4 V | 4.4m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 75nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SUD50N04-37P-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0437pt4e3-datasheets-3671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 37mOhm | 8A | 40V | 2W Ta 10.8W Tc | N-Channel | 640pF @ 20V | 37m Ω @ 5A, 10V | 2.5V @ 250μA | 5.4A Ta 8A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8405DB-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8405dbt1e1-datasheets-6204.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | 4 | No | 1 | Single | 2.77W | 4-Microfoot | 16 ns | 32ns | 32 ns | 120 ns | -3.6A | 8V | 12V | 1.47W Ta | 55mOhm | -12V | P-Channel | 55mOhm @ 1A, 4.5V | 950mV @ 250μA | 3.6A Ta | 21nC @ 4.5V | 55 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7860DP-T1-GE3 | Vishay Siliconix | $0.86 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7860dpt1ge3-datasheets-3692.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | FET General Purpose Powers | R-XDSO-C5 | 18 ns | 12ns | 19 ns | 46 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 50A | 45 mJ | 30V | N-Channel | 8m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SUD50P10-43-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50p1043e3-datasheets-3907.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 8.3W | 1 | Other Transistors | R-PSSO-G2 | 30 ns | 115ns | 60 ns | 80 ns | 9.4A | 20V | SILICON | DRAIN | 100V | 8.3W Ta 136W Tc | 50A | 80 mJ | -100V | P-Channel | 5230pF @ 50V | 43m Ω @ 9.4A, 10V | 4V @ 250μA | 38A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUM90P10-19-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90p1019e3-datasheets-3910.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 13.6W | 1 | Other Transistors | R-PSSO-G2 | 30 ns | 720ns | 610 ns | 125 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 100V | 13.6W Ta 375W Tc | 90A | 90A | -100V | P-Channel | 12000pF @ 50V | 19m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUP60N06-12P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60n0612pge3-datasheets-3346.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 6.000006g | 3 | EAR99 | No | 3 | 1 | Single | 3.25W | 1 | FET General Purpose Power | 11 ns | 11ns | 8 ns | 16 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.25W Ta 100W Tc | TO-220AB | 80A | 80 mJ | N-Channel | 1970pF @ 30V | 12m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SUP90N15-18P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup90n1518pe3-datasheets-3967.pdf | TO-220-3 | Lead Free | 3 | No SVHC | 18mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | FET General Purpose Power | 15 ns | 10ns | 8 ns | 25 ns | 90A | 20V | 150V | SILICON | DRAIN | SWITCHING | 2.5V | 3.75W Ta 375W Tc | TO-220AB | N-Channel | 4180pF @ 75V | 18m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SUP85N03-04P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup85n0304pe3-datasheets-4002.pdf | TO-220-3 | 10.4902mm | 15.494mm | 4.6482mm | Lead Free | 4.3mOhm | 3 | No | Single | 166W | 1 | TO-220AB | 4.5nF | 15 ns | 12ns | 22 ns | 50 ns | 85A | 20V | 30V | 3.75W Ta 166W Tc | 4.3mOhm | 30V | N-Channel | 4500pF @ 25V | 4.3mOhm @ 30A, 10V | 3V @ 250μA | 85A Tc | 90nC @ 10V | 4.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SQD50N04-09H-GE3 | Vishay Siliconix | $0.87 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n0409hge3-datasheets-3988.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | Unknown | 3 | yes | EAR99 | No | 83W | GULL WING | 260 | 4 | Single | 40 | 83W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 14ns | 8 ns | 23 ns | 50A | 20V | DRAIN | 3.8V | 0.009Ohm | 76 mJ | 40V | N-Channel | 4240pF @ 25V | 3.8 V | 9m Ω @ 20A, 10V | 5V @ 250μA | 50A Tc | 76nC @ 10V | ||||||||||||||||||||||||||||||||||||||
| SUD50P08-26-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50p0826e3-datasheets-4091.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Single | 8.3W | 1 | TO-252, (D-Pak) | 5.16nF | 50ns | 65 ns | 90 ns | 12.9A | 20V | 80V | 8.3W Ta 136W Tc | 26mOhm | -80V | P-Channel | 5160pF @ 40V | 26mOhm @ 12.9A, 10V | 4V @ 250μA | 50A Tc | 155nC @ 10V | 26 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG30N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg30n60ege3-datasheets-4581.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 17 Weeks | 38.000013g | Unknown | 125mOhm | 3 | No | 1 | Single | 250W | 1 | TO-247AC | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| TP0202K-T1-GE3 | Vishay Siliconix | $0.03 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tp0202kt1e3-datasheets-6401.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | Single | 350mW | 1 | Other Transistors | 9 ns | 6ns | 20 ns | 30 ns | -385mA | 20V | SILICON | SWITCHING | 30V | -2V | 350mW Ta | P-Channel | 31pF @ 15V | -2 V | 1.4 Ω @ 500mA, 10V | 3V @ 250μA | 385mA Ta | 1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUM110N04-03-E3 | Vishay Siliconix | $2.25 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0403e3-datasheets-5402.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 437.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 170ns | 110 ns | 55 ns | 110A | 20V | 40V | SILICON | SWITCHING | 4V | 3.75W Ta 375W Tc | 60 ns | 440A | 0.0028Ohm | 40V | N-Channel | 8250pF @ 25V | 4 V | 2.8m Ω @ 30A, 10V | 4V @ 250μA | 110A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| SI8805EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8805edbt2e1-datasheets-6973.pdf | 4-XFBGA | 4 | 15 Weeks | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 4 | 1 | Single | 500mW | 1 | Other Transistors | 13 ns | 13ns | 17 ns | 25 ns | -3.1A | 5V | SILICON | SWITCHING | 8V | 8V | 500mW Ta | 0.088Ohm | P-Channel | 68m Ω @ 1.5A, 4.5V | 700mV @ 250μA | 10nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||
| SI1414DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1414dht1ge3-datasheets-8434.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 15 Weeks | 28.009329mg | 46mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.56W | 1 | FET General Purpose Power | 6 ns | 10ns | 10 ns | 20 ns | 4A | 8V | SILICON | SWITCHING | 2.8W Tc | 4A | 30V | N-Channel | 560pF @ 15V | 46m Ω @ 4A, 4.5V | 1V @ 250μA | 4A Tc | 15nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SUP85N03-3M6P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-sup85n033m6pge3-datasheets-8506.pdf | TO-220-3 | 3 | 6.000006g | No SVHC | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 30 | 3.1W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 10ns | 10 ns | 35 ns | 85A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.1W Ta 78.1W Tc | TO-220AB | 30V | N-Channel | 3535pF @ 15V | 3.6m Ω @ 22A, 10V | 2.5V @ 250μA | 85A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI1489EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1489edht1ge3-datasheets-8490.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 15 Weeks | 7.512624mg | 48mOhm | 6 | EAR99 | No | DUAL | GULL WING | 6 | 1 | Single | 156W | 1 | Other Transistors | 90 ns | 170ns | 630 ns | 690 ns | 2A | 5V | SILICON | SWITCHING | 8V | 2.8W Tc | 2A | -8V | P-Channel | 48m Ω @ 3A, 4.5V | 700mV @ 250μA | 2A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||
| SIR172DP-T1-GE3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir172dpt1ge3-datasheets-8454.pdf | PowerPAK® SO-8 | Lead Free | 5 | 12 Weeks | 506.605978mg | Unknown | 12.4MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 19 ns | 19ns | 13 ns | 19 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.5V | 29.8W Tc | 50A | 22 mJ | N-Channel | 997pF @ 15V | 2.5 V | 8.9m Ω @ 16.1A, 10V | 2.5V @ 250μA | 20A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| SI1315DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1315dlt1ge3-datasheets-8442.pdf | SC-70, SOT-323 | Lead Free | 3 | 15 Weeks | 124.596154mg | No SVHC | 336mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | Single | 300mW | 1 | Other Transistors | 10 ns | 15ns | 8 ns | 14 ns | -900mA | 8V | SILICON | SWITCHING | -400mV | 300mW Ta 400mW Tc | 0.9A | -8V | P-Channel | 112pF @ 4V | 336m Ω @ 800mA, 4.5V | 800mV @ 250μA | 900mA Tc | 3.4nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI4866BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4866bdyt1ge3-datasheets-4881.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | 5.3MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 150°C | 13 ns | 12ns | 9 ns | 57 ns | 16.1A | 8V | SILICON | SWITCHING | 1V | 4.45W Tc | 50A | 20 mJ | 12V | N-Channel | 5020pF @ 6V | 5.3m Ω @ 12A, 4.5V | 1V @ 250μA | 21.5A Tc | 80nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||
| SIA448DJ-T1-GE3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia448djt1ge3-datasheets-1655.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 13 Weeks | Unknown | 6 | EAR99 | No | 2 | Dual | 3.5W | 1 | S-PDSO-N3 | 8 ns | 30 ns | 12A | 8V | SILICON | DRAIN | SWITCHING | 400mV | 3.5W Ta 19.2W Tc | 30A | 20V | N-Channel | 1380pF @ 1V | 15m Ω @ 12.4A, 4.5V | 1V @ 250μA | 12A Tc | 35nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SISA18DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisa18dnt1ge3-datasheets-2778.pdf | PowerPAK® 1212-8 | 7.5mOhm | 1 | PowerPAK® 1212-8 | 1nF | 22 ns | 20ns | 14 ns | 30 ns | 38.3A | 2.4V | 30V | 3.2W Ta 19.8W Tc | 7.5mOhm | 30V | N-Channel | 1000pF @ 15V | 7.5mOhm @ 10A, 10V | 2.4V @ 250μA | 38.3A Tc | 21.5nC @ 10V | 7.5 mΩ | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR642DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir462dpt1ge3-datasheets-7448.pdf | PowerPAK® SO-8 | 6.15mm | 1.04mm | 5.15mm | 5 | 51 Weeks | 506.605978mg | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | Single | NOT SPECIFIED | 5.4W | 1 | R-PDSO-C5 | 30 ns | 105ns | 12 ns | 38 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 4.8W Ta 41.7W Tc | 0.0024Ohm | 40V | N-Channel | 4155pF @ 20V | 2.4m Ω @ 15A, 10V | 2.3V @ 250μA | 60A Tc | 84nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SUD35N05-26L-E3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud35n0526le3-datasheets-2955.pdf | 55V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | Lead Free | No SVHC | 20mOhm | 3 | No | Single | 50W | 1 | TO-252, (D-Pak) | 885pF | 5 ns | 18ns | 100 ns | 20 ns | 35A | 20V | 55V | 55V | 1V | 7.5W Ta 50W Tc | 20mOhm | 55V | N-Channel | 885pF @ 25V | 1 V | 20mOhm @ 20A, 10V | 1V @ 250μA (Min) | 35A Tc | 13nC @ 5V | 20 mΩ | 4.5V 10V | ±20V |
Please send RFQ , we will respond immediately.