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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7703EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7703ednt1e3-datasheets-0864.pdf | PowerPAK® 1212-8 | 6 | No SVHC | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 40 | 1.3W | 1 | Other Transistors | S-XDSO-C6 | 4 ns | 6ns | 6 ns | 23 ns | -6.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | -1V | 1.3W Ta | 4.3A | 20A | 20V | P-Channel | 48m Ω @ 6.3A, 4.5V | 1V @ 800μA | 4.3A Ta | 18nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||
| SI5913DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5913dct1e3-datasheets-6447.pdf | 8-SMD, Flat Lead | 8 | 15 Weeks | 84.99187mg | 8 | yes | EAR99 | unknown | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | Other Transistors | Not Qualified | 18 ns | 40ns | 10 ns | 18 ns | 3.7A | 12V | SILICON | SWITCHING | 20V | 1.7W Ta 3.1W Tc | 4A | -20V | P-Channel | 330pF @ 10V | 84m Ω @ 3.7A, 10V | 1.5V @ 250μA | 4A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||
| SI7635DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7635dpt1ge3-datasheets-2361.pdf | PowerPAK® SO-8 | Lead Free | 5 | 506.605978mg | Unknown | 4.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | Other Transistors | R-PDSO-C5 | 19 ns | 10ns | 13 ns | 65 ns | -40A | 16V | SILICON | DRAIN | SWITCHING | 20V | -2.2V | 5W Ta 54W Tc | 70A | -20V | P-Channel | 4595pF @ 10V | -2.2 V | 4.9m Ω @ 26A, 10V | 2.2V @ 250μA | 40A Tc | 143nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||
| SI7462DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7462dpt1e3-datasheets-6195.pdf | PowerPAK® SO-8 | Lead Free | 5 | 130MOhm | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.9W | DUAL | C BEND | 260 | 8 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 15ns | 20 ns | 40 ns | 2.6A | 20V | DRAIN | SWITCHING | 12A | 1.8 mJ | 200V | N-Channel | 130m Ω @ 4.1A, 10V | 4V @ 250μA | 2.6A Ta | 30nC @ 10V | |||||||||||||||||||||||||||||||||
| SI5440DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5440dct1ge3-datasheets-2288.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 2.5W | 2 | 20 ns | 12ns | 10 ns | 20 ns | 6A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 6.3W Tc | 30V | N-Channel | 1200pF @ 10V | 19m Ω @ 9.1A, 10V | 2.5V @ 250μA | 6A Tc | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI1305DL-T1-GE3 | Vishay Siliconix | $0.05 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1305dlt1e3-datasheets-7851.pdf | SC-70, SOT-323 | Lead Free | 3 | 3 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 3 | 30 | 290mW | 1 | Other Transistors | 8 ns | 55ns | 12 ns | 17 ns | 860mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | 8V | 290mW Ta | 0.86A | 0.28Ohm | P-Channel | 280m Ω @ 1A, 4.5V | 450mV @ 250μA (Min) | 860mA Ta | 4nC @ 4.5V | ||||||||||||||||||||||||||||||||||
| SI8445DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8445dbt2e1-datasheets-2406.pdf | 4-XFBGA, CSPBGA | 4 | 4 | yes | EAR99 | No | e3 | MATTE TIN | BOTTOM | BALL | 260 | 4 | Single | 40 | 1.8W | 1 | Other Transistors | 11 ns | 25ns | 10 ns | 37 ns | -9.8A | 5V | SILICON | SWITCHING | 20V | 1.8W Ta 11.4W Tc | 3.9A | -20V | P-Channel | 700pF @ 10V | 84m Ω @ 1A, 4.5V | 850mV @ 250μA | 9.8A Tc | 16nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||
| SI8467DB-T2-E1 | Vishay Siliconix | $0.88 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8467dbt2e1-datasheets-2409.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 73MOhm | 4 | EAR99 | No | BOTTOM | BALL | Single | 1 | Other Transistors | 25 ns | 45ns | 20 ns | 50 ns | -3.7A | -1.5V | SILICON | SWITCHING | 20V | 20V | 780mW Ta 1.8W Tc | P-Channel | 475pF @ 10V | 73m Ω @ 1A, 4.5V | 1.5V @ 250μA | 21nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SI4487DY-T1-GE3 | Vishay Siliconix | $2.10 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4487dyt1ge3-datasheets-2217.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 15 Weeks | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.5W | 1 | 9 ns | 8ns | 10 ns | 28 ns | 8.2A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5W Ta 5W Tc | 0.0205Ohm | -30V | P-Channel | 1075pF @ 15V | 20.5m Ω @ 10A, 10V | 2.5V @ 250μA | 11.6A Tc | 36nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||
| SI8451DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si8451dbt2e1-datasheets-2412.pdf | 6-UFBGA | 6 | 80mOhm | yes | EAR99 | e3 | PURE MATTE TIN | BOTTOM | BALL | 260 | 8 | 30 | 2.77W | 1 | Other Transistors | Not Qualified | R-PBGA-B6 | 30ns | 30 ns | 45 ns | -10.8A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.77W Ta 13W Tc | 5A | 15A | -20V | P-Channel | 750pF @ 10V | 80m Ω @ 1A, 4.5V | 1V @ 250μA | 10.8A Tc | 24nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SIB455EDK-T1-GE3 | Vishay Siliconix | $4.31 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib455edkt1ge3-datasheets-2439.pdf | PowerPAK® SC-75-6L | 3 | 6 | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 6 | Single | NOT SPECIFIED | 13W | 1 | Other Transistors | Not Qualified | S-XDSO-N3 | 3.2 ns | 7.8A | 10V | SILICON | DRAIN | SWITCHING | 12V | 2.4W Ta 13W Tc | 9A | 25A | 0.027Ohm | -12V | P-Channel | 27m Ω @ 5.6A, 4.5V | 1V @ 250μA | 9A Tc | 30nC @ 8V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||
| SIA425EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia425edjt1ge3-datasheets-2443.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 6 | 6 | yes | EAR99 | unknown | DUAL | NO LEAD | 260 | 6 | 40 | 2.9W | 1 | Other Transistors | Not Qualified | 10 ns | 4.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 20V | 20V | 2.9W Ta 15.6W Tc | P-Channel | 60m Ω @ 4.2A, 4.5V | 1V @ 250μA | 4.5A Tc | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| SI7774DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7774dpt1ge3-datasheets-2402.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 5W Ta 48W Tc | N-Channel | 2630pF @ 15V | 3.8m Ω @ 15A, 10V | 2.2V @ 250μA | 60A Tc | 66nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIE832DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie832dft1e3-datasheets-6384.pdf | 10-PolarPAK® (S) | 4 | 12 Weeks | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PDSO-N4 | 45 ns | 260ns | 55 ns | 35 ns | 23.6A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 80A | 0.0055Ohm | 40V | N-Channel | 3800pF @ 20V | 5.5m Ω @ 14A, 10V | 3V @ 250μA | 50A Tc | 77nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI7621DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7621dnt1ge3-datasheets-2383.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 30 | 3.1W | 1 | Other Transistors | S-XDSO-C5 | 8 ns | 75ns | 60 ns | 25 ns | 4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 3.1W Ta 12.5W Tc | 4A | 0.09Ohm | P-Channel | 300pF @ 10V | 90m Ω @ 3.9A, 4.5V | 2V @ 250μA | 4A Tc | 6.2nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||
| SI4484EY-T1-GE3 | Vishay Siliconix | $1.73 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4484eyt1e3-datasheets-8352.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | No SVHC | 8 | 1 | Single | 1.8W | 1 | 8-SO | 4.8A | 20V | 100V | 2V | 1.8W Ta | 34mOhm | 100V | N-Channel | 34mOhm @ 6.9A, 10V | 2V @ 250μA (Min) | 4.8A Ta | 30nC @ 10V | 34 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI8475EDB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8475edbt1e1-datasheets-2473.pdf | 4-XFBGA, CSPBGA | 4 | 13 Weeks | 4 | yes | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 30 | 1 | Other Transistors | 80 μs | 7.7A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 1.1W Ta 2.7W Tc | 25A | 0.051Ohm | 80 mJ | 20V | P-Channel | 32m Ω @ 1A, 4.5V | 1.5V @ 250μA | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SIA406DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sia406djt1ge3-datasheets-2428.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 13 Weeks | Unknown | 19.8mOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | FET General Purpose Power | S-XDSO-N3 | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | 1V | 3.5W Ta 19W Tc | 20A | N-Channel | 1380pF @ 6V | 19.8m Ω @ 10.8A, 4.5V | 1V @ 250μA | 4.5A Tc | 23nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||
| SIB488DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib488dkt1ge3-datasheets-2431.pdf | PowerPAK® SC-75-6L | Lead Free | 6 | 15 Weeks | 95.991485mg | 20MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | Single | 40 | 2.4W | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 20 ns | 9A | 8V | SILICON | DRAIN | SWITCHING | 12V | 2.4W Ta 13W Tc | 9A | 35A | N-Channel | 725pF @ 6V | 20m Ω @ 6.3A, 4.5V | 1V @ 250μA | 9A Tc | 20nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||
| SI1304BDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1304bdlt1e3-datasheets-7824.pdf | SC-70, SOT-323 | 3 | 3 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 3 | 30 | 340mW | 1 | FET General Purpose Powers | 10 ns | 30ns | 10 ns | 5 ns | 850mA | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 340mW Ta 370mW Tc | 0.85A | 0.27Ohm | N-Channel | 100pF @ 15V | 270m Ω @ 900mA, 4.5V | 1.3V @ 250μA | 900mA Tc | 2.7nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||
| SI6467BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6467bdqt1e3-datasheets-6035.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.05W | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.05W | 1 | Other Transistors | 45 ns | 85ns | 85 ns | 220 ns | -8A | 8V | 12V | P-Channel | 12.5m Ω @ 8A, 4.5V | 850mV @ 450μA | 6.8A Ta | 70nC @ 4.5V | |||||||||||||||||||||||||||||||||||||
| SIE854DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie854dft1ge3-datasheets-2529.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 15 ns | 10ns | 10 ns | 30 ns | 13.2A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 60A | 60A | 80 mJ | 100V | N-Channel | 3100pF @ 50V | 14.2m Ω @ 13.2A, 10V | 4.4V @ 250μA | 60A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SI8473EDB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8473edbt1e1-datasheets-2419.pdf | 4-XFBGA, CSPBGA | 4 | Unknown | 4 | yes | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | Single | 30 | 1 | Other Transistors | -7.1A | 12V | SILICON | SWITCHING | 20V | -1.5V | 1.1W Ta 2.7W Tc | 0.055Ohm | -20V | P-Channel | 41m Ω @ 1A, 4.5V | 1.5V @ 250μA | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SIE860DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie860dft1ge3-datasheets-2541.pdf | 10-PolarPAK® (M) | 4 | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 35 ns | 20ns | 30 ns | 50 ns | 38A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5.2W Ta 104W Tc | 60A | 80A | N-Channel | 4500pF @ 15V | 2.1m Ω @ 21.7A, 10V | 2.5V @ 250μA | 60A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIE836DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie836dft1ge3-datasheets-2516.pdf | 10-PolarPAK® (SH) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 15 ns | 10ns | 10 ns | 20 ns | 4.1A | 30V | SILICON | DRAIN SOURCE | SWITCHING | 5.2W Ta 104W Tc | 18.3A | 15A | 0.13Ohm | 1.25 mJ | 200V | N-Channel | 1200pF @ 100V | 130m Ω @ 4.1A, 10V | 4.5V @ 250μA | 18.3A Tc | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| SIE848DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sie848dft1ge3-datasheets-2513.pdf | 10-PolarPAK® (L) | 4 | Unknown | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 125W | 1 | FET General Purpose Power | R-PDSO-N4 | 45 ns | 30ns | 40 ns | 70 ns | 43A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 1.8V | 5.2W Ta 125W Tc | 0.0022Ohm | 30V | N-Channel | 6100pF @ 15V | 1.8 V | 1.6m Ω @ 25A, 10V | 2.5V @ 250μA | 60A Tc | 138nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SIR838DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir838dpt1ge3-datasheets-2564.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 40 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 11ns | 10 ns | 23 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.4W Ta 96W Tc | 60A | 0.033Ohm | 45 mJ | 150V | N-Channel | 2075pF @ 75V | 33m Ω @ 8.3A, 10V | 4V @ 250μA | 35A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SIR876DP-T1-GE3 | Vishay Siliconix | $9.04 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir876dpt1ge3-datasheets-2553.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | Single | 40 | 5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 28 ns | 31ns | 17 ns | 36 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5W Ta 62.5W Tc | 100V | N-Channel | 1640pF @ 50V | 10.8m Ω @ 20A, 10V | 2.8V @ 250μA | 40A Tc | 48nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI5433BDC-T1-GE3 | Vishay Siliconix | $0.22 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5433bdct1e3-datasheets-8454.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | 12 ns | 25ns | 55 ns | 80 ns | -5A | 8V | SILICON | 20V | 1.3W Ta | 0.037Ohm | -20V | P-Channel | 37m Ω @ 4.8A, 4.5V | 1V @ 250μA | 4.8A Ta | 22nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| SIR412DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sir412dpt1ge3-datasheets-2592.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 13 ns | 13ns | 10 ns | 13 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.9W Ta 15.6W Tc | 50A | 25V | N-Channel | 600pF @ 10V | 12m Ω @ 10A, 10V | 2.5V @ 250μA | 20A Tc | 16nC @ 10V | 4.5V 10V | ±20V |
