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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUP25P10-138-GE3 | Vishay Siliconix | $2.06 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup25p10138ge3-datasheets-2164.pdf | TO-220-3 | 3 | 6.000006g | No SVHC | 3 | EAR99 | unknown | 1 | Single | 1 | 16.3A | 20V | SILICON | DRAIN | SWITCHING | P-CHANNEL | 100V | 3.1W Ta 73.5W Tc | TO-220AB | 40A | N-Channel | 2100pF @ 50V | 13.8m Ω @ 6A, 10V | 4V @ 250μA | 16.3A Tc | 60nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIS478DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sis478dnt1ge3-datasheets-2435.pdf | PowerPAK® 1212-8 | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | FET General Purpose Power | S-PDSO-C5 | 12A | 25V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.2V | 15.6W Tc | 40A | 0.02Ohm | 5 mJ | N-Channel | 398pF @ 15V | 20m Ω @ 8A, 10V | 2.5V @ 250μA | 12A Tc | 10.5nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| SUM110N04-2M1P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sum110n042m1pe3-datasheets-2490.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 1.437803g | No SVHC | 2.1mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 312W | 1 | FET General Purpose Power | R-PSSO-G2 | 102 ns | 62ns | 60 ns | 180 ns | 11A | 20V | SILICON | SWITCHING | 1.2V | 3.13W Ta 312W Tc | 250A | 40V | N-Channel | 18800pF @ 20V | 2.1m Ω @ 30A, 10V | 2.5V @ 250μA | 29A Ta 110A Tc | 360nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SUM90N04-3M3P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sum90n043m3pe3-datasheets-2478.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 15 Weeks | 1.437803g | 3.3mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 7ns | 7 ns | 45 ns | 90A | 20V | SILICON | SWITCHING | 3.1W Ta 125W Tc | 40V | N-Channel | 5286pF @ 20V | 3.3m Ω @ 22A, 10V | 2.5V @ 250μA | 90A Tc | 131nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI4128BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4128bdyt1ge3-datasheets-2640.pdf | SOIC | 13 Weeks | 8 | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7102DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7102dnt1ge3-datasheets-0197.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 52mW | 1 | FET General Purpose Powers | S-XDSO-C5 | 27 ns | 125ns | 12 ns | 53 ns | 25A | 8V | SILICON | DRAIN | SWITCHING | 12V | 1V | 3.8W Ta 52W Tc | 35A | 60A | N-Channel | 3720pF @ 6V | 3.8m Ω @ 15A, 4.5V | 1V @ 250μA | 35A Tc | 110nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| SI4410BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4410bdyt1e3-datasheets-9808.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 12 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.4W | 1 | FET General Purpose Powers | 10 ns | 10ns | 15 ns | 40 ns | 10A | 20V | SILICON | SWITCHING | 1V | 1.4W Ta | 7.5A | 30V | N-Channel | 13.5m Ω @ 10A, 10V | 3V @ 250μA | 7.5A Ta | 20nC @ 5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIB404DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sib404dkt1ge3-datasheets-2734.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 24 Weeks | Unknown | 19mOhm | 6 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 6 | 1 | 40 | 2.5W | 1 | FET General Purpose Power | S-PDSO-C3 | 5 ns | 40ns | 20 ns | 20 ns | 9A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 350mV | 2.5W Ta 13W Tc | 9A | 35A | N-Channel | 19m Ω @ 3A, 4.5V | 800mV @ 250μA | 9A Tc | 15nC @ 4.5V | 4.5V | ±5V | ||||||||||||||||||||||||||||||||||
| SIA444DJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sia444djtt1ge3-datasheets-2722.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 15 Weeks | Unknown | 6 | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | FET General Purpose Power | S-PDSO-N3 | 12 ns | 12ns | 10 ns | 15 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 3.5W Ta 19W Tc | 40A | N-Channel | 560pF @ 15V | 17m Ω @ 7.4A, 10V | 2.2V @ 250μA | 12A Tc | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIR774DP-T1-GE3 | Vishay Siliconix | $6.79 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir774dpt1ge3-datasheets-2880.pdf | 5 | EAR99 | YES | 62.5W | DUAL | C BEND | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 62.5W | 1 | FET General Purpose Power | R-XDSO-C5 | 10ns | 10 ns | 33 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 80A | 2.1mOhm | 45 mJ | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI8469DB-T2-E1 | Vishay Siliconix | $1.71 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8469dbt2e1-datasheets-2815.pdf | 4-UFBGA | Lead Free | 4 | 15 Weeks | 64mOhm | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 4 | 1 | 780mW | 1 | Other Transistors | 15 ns | 22ns | 17 ns | 35 ns | 3.6A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 8V | 8V | 780mW Ta 1.8W Tc | P-Channel | 900pF @ 4V | 64m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 4.6A Ta | 17nC @ 4.5V | 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||
| SI4010DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4010dyt1ge3-datasheets-3123.pdf | 8-SOIC (0.154, 3.90mm Width) | 27 Weeks | 3.4mOhm | 8-SO | 30V | 6W Tc | N-Channel | 3595pF @ 15V | 3.4mOhm @ 15A, 10V | 2.3V @ 250μA | 31.3A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1428EDH-T1-GE3 | Vishay Siliconix | $25.94 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1428edht1ge3-datasheets-3524.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | EAR99 | unknown | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | 4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | 30V | 2.8W Tc | 4A | 0.045Ohm | N-Channel | 45m Ω @ 3.7A, 10V | 1.3V @ 250μA | 4A Tc | 13.5nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| SMM2348ES-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-smm2348est1ge3-datasheets-3544.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 25 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 3W Tc | 8A | 0.024Ohm | 50 pF | N-Channel | 540pF @ 15V | 24m Ω @ 12A, 10V | 2.5V @ 250μA | 8A Tc | 14.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1002R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1002rt1ge3-datasheets-3562.pdf | SC-75A | 3 | 25 Weeks | 560mOhm | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 220mW Ta | N-Channel | 36pF @ 15V | 560m Ω @ 500mA, 4.5V | 1V @ 250μA | 610mA Ta | 2nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS778DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis778dnt1ge3-datasheets-3566.pdf | PowerPAK® 1212-8 | 5 | EAR99 | unknown | YES | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 1 | FET General Purpose Power | S-XDSO-C5 | 11 ns | 12ns | 9 ns | 20 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 52W Tc | 60A | 0.005Ohm | 20 mJ | N-Channel | 1390pF @ 15V | 5m Ω @ 10A, 10V | 2.2V @ 250μA | 35A Tc | 42.5nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI5446DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5442dut1ge3-datasheets-8289.pdf | PowerPAK® ChipFET™ Single | PowerPAK® ChipFet Single | 30V | 31W Tc | N-Channel | 1610pF @ 15V | 6.4mOhm @ 10A, 10V | 2.5V @ 250μA | 25A Tc | 30nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS612EDNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis612edntt1ge3-datasheets-3590.pdf | PowerPAK® 1212-8S | Lead Free | 13 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 2.06nF | 50A | 20V | 3.7W Ta 52W Tc | N-Channel | 2060pF @ 10V | 3.9mOhm @ 14A, 4.5V | 1.2V @ 1mA | 50A Tc | 70nC @ 10V | 3.9 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP45P03-09-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup45p0309ge3-datasheets-3613.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 73.5W Tc | TO-220AB | 45A | 100A | 0.0087Ohm | 61 mJ | P-Channel | 2700pF @ 15V | 8.7m Ω @ 20A, 10V | 2.5V @ 250μA | 45A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4833BDY-T1-GE3 | Vishay Siliconix | $0.31 |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4833bdyt1ge3-datasheets-3568.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 1.75W | 1 | 8-SOIC | 3.8A | 20V | 30V | 2.75W Tc | P-Channel | 350pF @ 15V | 68mOhm @ 3.6A, 10V | 2.5V @ 250μA | 4.6A Tc | 14nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS626DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis626dnt1ge3-datasheets-3630.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 25V | 52W Tc | N-Channel | 1925pF @ 15V | 9mOhm @ 10A, 10V | 1.4V @ 250μA | 16A Tc | 60nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120N04-1M4L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS496EDNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | /files/vishaysiliconix-sis496edntt1ge3-datasheets-3696.pdf | PowerPAK® 1212-8 | 5 | 13 Weeks | EAR99 | unknown | YES | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 52W Tc | 50A | 200A | 0.0048Ohm | 31 mJ | N-Channel | 1515pF @ 15V | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4712DY-T1-GE3 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4712dyt1ge3-datasheets-4346.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 1 | 16 ns | 18ns | 10 ns | 15 ns | 14.6A | 2.5V | SILICON | SINGLE WITH BUILT-IN DIODE | 2.5W Ta 5W Tc | 30V | N-Channel | 1084pF @ 15V | 2.5 V | 13m Ω @ 15A, 10V | 2.5V @ 1mA | 14.6A Tc | 28nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIR798DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/vishaysiliconix-sir798dpt1ge3-datasheets-4673.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | EAR99 | Tin | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-C5 | 17 ns | 11ns | 9 ns | 43 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1V | 83W Tc | 0.00205Ohm | N-Channel | 5050pF @ 15V | 2.05 Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 130nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIB437EDKT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sib437edktt1ge3-datasheets-4889.pdf | PowerPAK® TSC-75-6 | 3 | 15 Weeks | 95.991485mg | Unknown | 6 | EAR99 | No | DUAL | 6 | 1 | Single | 2.4W | 1 | Other Transistors | S-PDSO-N3 | 90 ns | 170ns | 630 ns | 690 ns | 7.5A | 5V | SILICON | DRAIN | SWITCHING | 8V | -350mV | 2.4W Ta 13W Tc | 9A | 25A | 0.034Ohm | -8V | P-Channel | 34m Ω @ 3A, 4.5V | 700mV @ 250μA | 9A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||
| SIR864DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sir864dpt1ge3-datasheets-4722.pdf | PowerPAK® SO-8 | 5 | 13 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 40A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.2V | 5W Ta 54W Tc | 70A | 0.0036Ohm | 45 mJ | N-Channel | 2460pF @ 15V | 1.2 V | 3.6m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 65nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI7792DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® Gen III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7792dpt1ge3-datasheets-5025.pdf | PowerPAK® SO-8 | 5 | 22 Weeks | EAR99 | Tin | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-C5 | 15 ns | 13ns | 12 ns | 40 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 6.25W Ta 104W Tc | 100A | 0.0021Ohm | 125 mJ | N-Channel | 4.735nF @ 15V | 2.1m Ω @ 20A, 10V | 2.5V @ 250μA | 40.6A Ta 60A Tc | 135nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI7794DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® Gen III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7794dpt1ge3-datasheets-5030.pdf | PowerPAK® SO-8 | 5 | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 30 | 5W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 10ns | 10 ns | 30 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 5W Ta 48W Tc | 0.0034Ohm | N-Channel | 2.52nF @ 15V | 3.4m Ω @ 20A, 10V | 2.5V @ 250μA | 28.6A Ta 60A Tc | 72nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHP22N60AEL-GE3 | Vishay Siliconix | $3.41 |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp22n60aelge3-datasheets-5280.pdf | TO-220-3 | TO-220AB | 600V | 208W Tc | N-Channel | 1757pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 82nC @ 10V | 10V | ±30V |
