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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFI510GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irfi510gpbf-datasheets-3853.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | No SVHC | 3 | No | 1 | Single | 27W | 1 | TO-220-3 | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.5A | 20V | 100V | 4V | 27W Tc | 540mOhm | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SQM40016EM_GE3 | Vishay Siliconix | $2.62 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40016emge3-datasheets-4412.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 14 Weeks | TO-263-7 | 40V | 300W Tc | N-Channel | 15000pF @ 25V | 1mOhm @ 40A, 10V | 3.5V @ 250μA | 250A Tc | 245nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP7N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihp7n60ege3-datasheets-4865.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 78W | 1 | FET General Purpose Powers | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | SILICON | SWITCHING | 2V | 78W Tc | TO-220AB | 7A | 0.6Ohm | 600V | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIHA15N50E-E3 | Vishay Siliconix | $1.83 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha15n50ee3-datasheets-5196.pdf | TO-220-3 Full Pack | 3 | 14 Weeks | 6.000006g | Unknown | 243mOhm | 3 | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 14.5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 4V | 33W Tc | TO-220AB | 28A | N-Channel | 1162pF @ 100V | 280m Ω @ 7.5A, 10V | 4V @ 250μA | 14.5A Tc | 66nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHP11N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sihp11n80ege3-datasheets-5529.pdf | TO-220-3 | 18 Weeks | 800V | 179W Tc | N-Channel | 1670pF @ 100V | 440m Ω @ 5.5A, 10V | 4V @ 250μA | 12A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irf840lcpbf-datasheets-8729.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 850mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 500V | 4V | 125W Tc | 740 ns | 850mOhm | 500V | N-Channel | 1100pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SI3493BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3493bdvt1e3-datasheets-9093.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 27.5mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2.08W | 1 | Other Transistors | 22 ns | 72ns | 84 ns | 75 ns | 7A | 8V | SILICON | SWITCHING | 20V | 2.08W Ta 2.97W Tc | 8A | -20V | P-Channel | 1805pF @ 10V | 27.5m Ω @ 7A, 4.5V | 900mV @ 250μA | 8A Tc | 43.5nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| IRF520SPBF | Vishay Siliconix | $1.06 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520spbf-datasheets-0907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 3 | No | D2PAK | 360pF | 8.8 ns | 30ns | 20 ns | 19 ns | 9.2A | 20V | 100V | 3.7W Ta 60W Tc | N-Channel | 360pF @ 25V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD690N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd690n60ege3-datasheets-1596.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 600V | 62.5W Tc | N-Channel | 347pF @ 100V | 700mOhm @ 2A, 10V | 5V @ 250μA | 6.4A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60efge3-datasheets-1996.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | D2PAK (TO-263) | 600V | 179W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS406DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis406dnt1ge3-datasheets-2843.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 20 ns | 12ns | 12 ns | 25 ns | 9A | 25V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 9A | 50A | 20 mJ | 30V | N-Channel | 1100pF @ 15V | 11m Ω @ 12A, 10V | 3V @ 250μA | 9A Ta | 28nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||
| SQJ474EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj474ept1ge3-datasheets-3703.pdf | PowerPAK® SO-8 | Lead Free | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 45W Tc | 26A | 65A | 0.03Ohm | 24 mJ | N-Channel | 1100pF @ 25V | 30m Ω @ 10A, 10V | 2.5V @ 250μA | 26A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIR664DP-T1-GE3 | Vishay Siliconix | $3.34 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir664dpt1ge3-datasheets-4773.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 8 | EAR99 | Tin | No | 5W | DUAL | C BEND | Single | 5W | 1 | R-PDSO-C5 | 12ns | 7 ns | 24 ns | 60A | 20V | DRAIN | SWITCHING | 0.006Ohm | 20 mJ | 60V | N-Channel | 1750pF @ 30V | 6m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 40nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| SIRA04DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira04dpt1ge3-datasheets-5425.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.15mOhm | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 5W | 1 | R-PDSO-C5 | 24 ns | 16 ns | 30 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 5W Ta 62.5W Tc | 20 mJ | 30V | N-Channel | 3595pF @ 15V | 1.1 V | 2.15m Ω @ 15A, 10V | 2.2V @ 250μA | 40A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||
| SIHA2N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha2n80ege3-datasheets-6696.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 800V | 29W Tc | N-Channel | 315pF @ 100V | 2.75Ohm @ 1A, 10V | 4V @ 250μA | 2.8A Tc | 19.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR844DP-T1-GE3 | Vishay Siliconix | $4.75 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir844dpt1ge3-datasheets-8137.pdf | PowerPAK® SO-8 | 5 | 21 Weeks | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 40 | 1 | R-XDSO-C5 | 23 ns | 21ns | 18 ns | 39 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5W Ta 50W Tc | 30A | 70A | 0.0028Ohm | 80 mJ | 25V | N-Channel | 3215pF @ 10V | 2.8m Ω @ 15A, 10V | 2.6V @ 250μA | 50A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF540STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf540spbf-datasheets-3481.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 77mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK (TO-263) | 1.7nF | 8.8 ns | 30ns | 20 ns | 19 ns | 28A | 20V | 100V | 3.7W Ta 150W Tc | 270mOhm | 100V | N-Channel | 1700pF @ 25V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 12 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF740STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf740spbf-datasheets-9653.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 550mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIR618DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir618dpt1ge3-datasheets-1367.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 200V | 48W Tc | N-Channel | 740pF @ 100V | 95mOhm @ 8A, 10V | 4V @ 250μA | 14.2A Tc | 16nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS413DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis413dnt1ge3-datasheets-6716.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 14 Weeks | No SVHC | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.7W | 1 | 150°C | S-PDSO-C5 | 11 ns | 11ns | 8 ns | 45 ns | -14.7A | 20V | SILICON | DRAIN | SWITCHING | 30V | -2.5V | 3.7W Ta 52W Tc | 70A | 0.0094Ohm | 20 mJ | -30V | P-Channel | 4280pF @ 15V | 9.4m Ω @ 15A, 10V | 2.5V @ 250μA | 18A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SISHA14DN-T1-GE3 | Vishay Siliconix | $0.51 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisha14dnt1ge3-datasheets-8025.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.57W Ta 26.5W Tc | N-Channel | 1450pF @ 15V | 5.1mOhm @ 10A, 10V | 2.2V @ 250μA | 19.7A Ta 20A Tc | 29nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS22LDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss22ldnt1ge3-datasheets-8625.pdf | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 60V | 5W Ta 65.7W Tc | N-Channel | 2540pF @ 30V | 3.65mOhm @ 15A, 10V | 2.5V @ 250μA | 25.5A Ta 92.5A Tc | 56nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ188DP-T1-GE3 | Vishay Siliconix | $1.48 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij188dpt1ge3-datasheets-8902.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 5W Ta 65.7W Tc | N-Channel | 1920pF @ 30V | 3.85mOhm @ 10A, 10V | 3.6V @ 250μA | 25.5A Ta 92.4A Tc | 44nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA46EP-T1_GE3 | Vishay Siliconix | $61.88 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja46ept1ge3-datasheets-9363.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 68W Tc | N-Channel | 5000pF @ 25V | 3mOhm @ 10A, 10V | 3.5V @ 250μA | 60A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD214PBF | Vishay Siliconix | $0.27 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd214pbf-datasheets-0387.pdf | 4-DIP (0.300, 7.62mm) | 8 Weeks | 4 | No | Single | 1W | 4-DIP, Hexdip, HVMDIP | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 450mA | 20V | 250V | 1W Ta | 2Ohm | 250V | N-Channel | 140pF @ 25V | 2Ohm @ 270mA, 10V | 4V @ 250μA | 450mA Ta | 8.2nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF20SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishay-irfbf20spbf-datasheets-6251.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 8Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 4V | 3.1W Ta 54W Tc | 8Ohm | N-Channel | 490pF @ 25V | 4 V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFP054PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irfp054pbf-datasheets-1299.pdf | 60V | 70A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 8 Weeks | 38.000013g | 14mOhm | 3 | yes | EAR99 | No | 3 | 1 | Single | 230W | 1 | 20 ns | 160ns | 150 ns | 83 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | 540 ns | 60V | N-Channel | 4500pF @ 25V | 14m Ω @ 54A, 10V | 4V @ 250μA | 70A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHU4N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu4n80aege3-datasheets-1544.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 8.5mm | 18 Weeks | 1 | 69W | 150°C | IPAK (TO-251) | 12 ns | 26 ns | 4.3A | 30V | 800V | 69W Tc | 1.1Ohm | 800V | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA12N60E-E3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha12n60ee3-datasheets-2772.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 6.000006g | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 14 ns | 19ns | 19 ns | 35 ns | 12A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 4V | 33W Tc | TO-220AB | 27A | N-Channel | 937pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIAA02DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siaa02djt1ge3-datasheets-3084.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 20V | 3.5W Ta 19W Tc | N-Channel | 1250pF @ 10V | 4.7mOhm @ 8A, 10V | 1.6V @ 250μA | 22A Ta 52A Tc | 33nC @ 10V | 2.5V 10V | +12V, -8V |
