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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Lead Length | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SQP120N06-6M7_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | TO-220-3 Full Pack | 12 Weeks | TO-220AB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF7N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihf7n60ege3-datasheets-4918.pdf | TO-220-3 Full Pack | 14 Weeks | 6.000006g | Unknown | 3 | EAR99 | No | 1 | Single | 31W | FET General Purpose Powers | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | 600V | 2V | 31W Tc | 7A | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfbc30apbf-datasheets-5471.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 2.2Ohm | 3 | No | 44A | 600V | 1 | Single | 74W | 1 | TO-220AB | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 4.5V | 74W Tc | 2.2Ohm | 600V | N-Channel | 510pF @ 25V | 4.5 V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRF9Z34PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z34pbf-datasheets-8721.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 140mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 1.1nF | 18 ns | 120ns | 58 ns | 20 ns | 18A | 20V | 60V | -4V | 88W Tc | 140mOhm | P-Channel | 1100pF @ 25V | -4 V | 140mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 34nC @ 10V | 140 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFI540GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfi540gpbf-datasheets-9758.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 77mOhm | 3 | No | 1 | Single | 48W | 1 | TO-220-3 | 1.7nF | 2.5kV | 11 ns | 44ns | 43 ns | 53 ns | 17A | 20V | 100V | 4V | 48W Tc | 77mOhm | N-Channel | 1700pF @ 25V | 4 V | 77mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 72nC @ 10V | 77 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFU014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfr014trlpbf-datasheets-8479.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 200mOhm | 3 | yes | EAR99 | No | 9.65mm | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 10 ns | 50ns | 19 ns | 13 ns | 7.7A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 4V | 2.5W Ta 25W Tc | 27.4 mJ | N-Channel | 300pF @ 25V | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIHU4N80AE-GE3 | Vishay Siliconix | $1.35 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu4n80aege3-datasheets-1544.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 14 Weeks | IPAK (TO-251) | 800V | 69W Tc | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH125N60EF-T1GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh125n60eft1ge3-datasheets-1962.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 156W Tc | N-Channel | 1533pF @ 100V | 125mOhm @ 12A, 10V | 5V @ 250μA | 23A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4134DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4134dyt1ge3-datasheets-8902.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 14 Weeks | 186.993455mg | 14mOhm | 8 | No | 1 | Single | 8-SO | 846pF | 9 ns | 9ns | 8 ns | 14 ns | 14A | 20V | 30V | 2.5W Ta 5W Tc | 14.5mOhm | 30V | N-Channel | 846pF @ 15V | 14mOhm @ 10A, 10V | 2.5V @ 250μA | 14A Tc | 23nC @ 10V | 14 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLR014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 200mOhm | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 25W Tc | 27.4 mJ | 60V | N-Channel | 400pF @ 25V | 200m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||
| SI4628DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4628dyt1ge3-datasheets-4807.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 15 Weeks | 186.993455mg | No SVHC | 3mOhm | 8 | No | 1 | 7.8W | 1 | 8-SO | 3.45nF | 28 ns | 20ns | 13 ns | 39 ns | 38mA | 20V | 30V | 1V | 3.5W Ta 7.8W Tc | 2.4mOhm | N-Channel | 3450pF @ 15V | 3mOhm @ 20A, 10V | 2.5V @ 1mA | 38A Tc | 87nC @ 10V | 3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI7465DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7465dpt1e3-datasheets-7224.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 64MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | R-XDSO-C5 | 8 ns | 9ns | 9 ns | 65 ns | -5A | 20V | SILICON | DRAIN | 60V | -3V | 1.5W Ta | 3.2A | 25A | 24.2 mJ | -60V | P-Channel | -3 V | 64m Ω @ 5A, 10V | 3V @ 250μA | 3.2A Ta | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SI7108DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7108dnt1ge3-datasheets-8585.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 4.9mOhm | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 60 ns | 22A | 16V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 60A | 24 mJ | 20V | N-Channel | 2 V | 4.9m Ω @ 22A, 10V | 2V @ 250μA | 14A Ta | 30nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||
| SQD100N04-3M6L_GE3 | Vishay Siliconix | $8.98 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd100n043m6lge3-datasheets-8118.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 12 Weeks | 3 | Single | 136W | 1 | TO-252AA | 4.88nF | 9 ns | 39 ns | 100A | 20V | 40V | 136W Tc | 7mOhm | N-Channel | 6700pF @ 25V | 3.6mOhm @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF820STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf820spbf-datasheets-4619.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 12 Weeks | 1.437803g | 3Ohm | No | 1 | Single | 3.1W | 1 | D2PAK | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.5A | 20V | 500V | 3.1W Ta 50W Tc | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF730ASTRLPBF | Vishay Siliconix | $2.99 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf730aspbf-datasheets-5061.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | 1 | Single | 74W | 1 | D2PAK | 600pF | 10 ns | 22ns | 16 ns | 20 ns | 5.5A | 30V | 400V | 74W Tc | 1Ohm | 400V | N-Channel | 600pF @ 25V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIS776DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis776dnt1ge3-datasheets-1330.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | 8 | EAR99 | No | DUAL | C BEND | 8 | 1 | FET General Purpose Powers | S-XDSO-C5 | 18 ns | 11ns | 10 ns | 20 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 52W Tc | 60A | 0.0062Ohm | 20 mJ | N-Channel | 1360pF @ 15V | 6.2m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 36nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIS427EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis427ednt1ge3-datasheets-6829.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | S-PDSO-C5 | 45 ns | 40ns | 12 ns | 28 ns | -50A | 25V | SILICON | DRAIN | SWITCHING | 30V | 3.7W Ta 52W Tc | -30V | P-Channel | 1930pF @ 15V | 10.6m Ω @ 11A, 10V | 2.5V @ 250μA | 50A Tc | 66nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| SISS10ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss10adnt1ge3-datasheets-7983.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 40V | 4.8W Ta 56.8W Tc | N-Channel | 3030pF @ 20V | 2.65mOhm @ 15A, 10V | 2.4V @ 250μA | 31.7A Ta 109A Tc | 61nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA42EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja42ept1ge3-datasheets-8583.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 27W Tc | N-Channel | 1700pF @ 25V | 9.4mOhm @ 6A, 10V | 2.3V @ 250μA | 20A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA78EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja78ept1ge3-datasheets-8909.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 68W Tc | N-Channel | 5100pF @ 25V | 5.3mOhm @ 10A, 10V | 3.3V @ 250μA | 72A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA90DP-T1-GE3 | Vishay Siliconix | $0.56 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira90dpt1re3-datasheets-5783.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 104W Tc | N-Channel | 10180pF @ 15V | 0.8mOhm @ 20A, 10V | 2V @ 250μA | 100A Tc | 153nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5443DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5443dct1e3-datasheets-0192.pdf | 8-SMD, Flat Lead | 8 | 21 Weeks | 65mOhm | yes | EAR99 | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 30 | 1.3W | 1 | Other Transistors | Not Qualified | R-XDSO-C8 | 3.6A | 12V | SILICON | 1.3W Ta | 20V | P-Channel | 65m Ω @ 3.6A, 4.5V | 600mV @ 250μA (Min) | 3.6A Ta | 14nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7703EDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7703ednt1e3-datasheets-0864.pdf | PowerPAK® 1212-8 | 6 | 49 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 40 | 1.3W | 1 | Other Transistors | S-XDSO-C6 | 4 ns | 6ns | 6 ns | 23 ns | -6.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 1.3W Ta | 4.3A | 20A | 20V | P-Channel | 48m Ω @ 6.3A, 4.5V | 1V @ 800μA | 4.3A Ta | 18nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| IRF634PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf634pbf-datasheets-1281.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 450mOhm | 3 | No | 1 | Single | 74W | 1 | TO-220AB | 770pF | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | 250V | 4V | 74W Tc | 450mOhm | N-Channel | 770pF @ 25V | 4 V | 450mOhm @ 5.1A, 10V | 4V @ 250μA | 8.1A Tc | 41nC @ 10V | 450 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF9Z20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z20pbf-datasheets-2328.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220AB | 480pF | 8.2 ns | 57ns | 25 ns | 12 ns | 9.7A | 20V | 50V | -4V | 40W Tc | 280mOhm | P-Channel | 480pF @ 25V | -4 V | 280mOhm @ 5.6A, 10V | 4V @ 250μA | 9.7A Tc | 26nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHB22N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n65ege3-datasheets-2757.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | Unknown | 3 | yes | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 227W | 1 | R-PSSO-G2 | 33ns | 38 ns | 73 ns | 22A | 4V | SILICON | SWITCHING | 227W Tc | 56A | 650V | N-Channel | 2415pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SIS415DNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis415dntt1ge3-datasheets-3135.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | 8 | EAR99 | unknown | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 3.7W | 1 | S-PDSO-F5 | 38ns | 25 ns | 82 ns | 35A | -1.5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 3.7W Ta 52W Tc | 0.004Ohm | 20 mJ | -20V | P-Channel | 5460pF @ 10V | 4m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 180nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| SIR474DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 29.8W Tc | N-Channel | 985pF @ 15V | 9.5mOhm @ 10A, 10V | 2.2V @ 250μA | 20A Tc | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU3N50DA-GE3 | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu3n50dage3-datasheets-4476.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 8 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 500V | 69W Tc | N-Channel | 177pF @ 100V | 3.2 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V |
