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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Input Voltage (Max) | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG3157ADN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg3157bdnt1e4-datasheets-4600.pdf | 6-UFDFN | 1μA | 6 | 5.5V | 1.65V | 15Ohm | 6 | yes | No | 1 | e4 | PALLADIUM GOLD OVER NICKEL | 160mW | DUAL | 260 | 3V | 0.4mm | DG3157 | 6 | 1 | 30 | Multiplexer or Switches | 1 | 300MHz | 25 ns | 21 ns | Single | SEPARATE OUTPUT | 15Ohm | 57 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 45ns | 50ns | 2:1 | 1.65V~5.5V | SPDT | 7pF | 25ns, 21ns | 7pC | 800m Ω | -64dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG33N65E-GE3 | Vishay Siliconix | $5.78 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg33n65ege3-datasheets-4651.pdf | TO-247-3 | 18 Weeks | 3 | TO-247AC | 4.04nF | 32.4A | 650V | 4V | 313W Tc | 90mOhm | N-Channel | 4040pF @ 100V | 105mOhm @ 16.5A, 10V | 4V @ 250μA | 32.4A Tc | 173nC @ 10V | 105 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4157DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 50nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4157dnt1e4-datasheets-4690.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 500nA | 6 | 12 Weeks | 5.5V | 1.65V | 1.2Ohm | 6 | yes | No | 1 | e3 | Matte Tin (Sn) | 250mW | DUAL | GULL WING | 260 | 3V | DG4157 | 6 | 1 | 40 | 250mW | Multiplexer or Switches | 117MHz | 55 ns | 27 ns | Single | 2 | 1 | 1.2Ohm | 31 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 30ns | 2:1 | 1.65V~5.5V | SPDT | 2nA | 20pF | 37ns, 23ns | 50pC | 120m Ω (Max) | -63dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR224PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | 250V | 250V | 2.5W Ta 42W Tc | 400 ns | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 4 V | 1.1Ohm @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2004DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 20nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2005dqt1e3-datasheets-5288.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | 1μA | 139.989945mg | 5.5V | 1.8V | 2.5Ohm | 8 | No | 320mW | DG2004 | 2 | 320mW | 2 | 8-MSOP | SPST | 28 ns | 22 ns | Single | 2 | 2 | 2.5Ohm | 1:1 | 1.8V~5.5V | SPST - NC | 1nA | 51pF | 28ns, 22ns | 1pC | -67dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP50020E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup50020ege3-datasheets-7899.pdf | TO-220-3 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 375W Tc | N-Channel | 2.4m Ω @ 30A, 10V | 4V @ 250μA | 120A Tc | 128nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2303DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2303dlt1e3-datasheets-5353.pdf | 5-TSSOP, SC-70-5, SOT-353 | 2mm | 1μA | 5 | 12 Weeks | 5.5V | 1.65V | 15Ohm | 5 | yes | No | 1 | 1μA | e3 | MATTE TIN | 250mW | DUAL | GULL WING | 260 | 1.8V | DG2303 | 5 | 1 | 40 | 250mW | Multiplexer or Switches | SPST | 4.4 ns | 14.3 ns | Single | 1 | 7Ohm | 50 dB | 1:1 | 1.65V~5.5V | SPST - NO | 10μA | 9pF | 2ns, 7.5ns | 0.5pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha15n65ege3-datasheets-8897.pdf | TO-220-3 Full Pack | 18.1mm | 18 Weeks | 1 | 34W | 150°C | 18 ns | 48 ns | 15A | 30V | 34W Tc | 650V | N-Channel | 2460pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2301DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2301dlt1e3-datasheets-5383.pdf | 5-TSSOP, SC-70-5, SOT-353 | 2mm | 1μA | 5 | 5.5V | 4V | 20Ohm | 5 | yes | No | 1 | 10nA | e3 | MATTE TIN | 250mW | DUAL | GULL WING | 260 | 5V | DG2301 | 5 | 1 | 40 | Multiplexer or Switches | 5V | 1 | SPST | 4.5 ns | 4.2 ns | Single | 7Ohm | 1:1 | 4V~5.5V | SPST - NO | 10μA | 5pF | 3.9ns, 4ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2367DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si2367dst1ge3-datasheets-1090.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 66MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 960mW | 1 | Other Transistors | 8 ns | 9ns | 9 ns | 35 ns | -3.8A | 8V | SILICON | SWITCHING | 20V | 20V | -400mV | 960mW Ta 1.7W Tc | P-Channel | 561pF @ 10V | 66m Ω @ 2.5A, 4.5V | 1V @ 250μA | 3.8A Tc | 23nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2721DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | 0.6mm | ROHS3 Compliant | 10-UFQFN | 3V | 10 | 4.3V | 2.6V | 7Ohm | 10 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | QUAD | NO LEAD | 260 | 3V | DG2721 | 10 | 2 | 40 | 208mW | Multiplexer or Switches | 3V | 1 | Not Qualified | 620MHz | SPDT | Single | 4 | 7Ohm | 30 dB | 0.35Ohm | BREAK-BEFORE-MAKE | 30ns | 2:2 | DTDT | 100nA | 4pF | 30ns, 25ns | 0.5pC | 350m Ω | -49dB @ 240MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3127DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3127dvt1ge3-datasheets-2508.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 2W Ta 4.2W Tc | MO-193AA | 5.1A | 0.089Ohm | P-Channel | 833pF @ 20V | 89m Ω @ 1.5A, 4.5V | 3V @ 250μA | 3.5A Ta 13A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2741DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | 1.45mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2743dst1e3-datasheets-5403.pdf | SOT-23-8 | 1.65mm | 1μA | 8 | 3.6V | 1.5V | 8Ohm | 8 | yes | VIDEO APPLICATION | 2 | 10nA | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1.8V | 0.65mm | DG2741 | 8 | 1 | 10 | Multiplexer or Switches | Not Qualified | SPST | 45 ns | 40 ns | Single | 2 | SEPARATE OUTPUT | 800mOhm | 55 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 50ns | NO | 1:1 | 1.5V~3.6V | SPST - NO | 1nA | 81pF | 30ns, 28ns | 5.8pC | -89dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3476DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3476dvt1ge3-datasheets-3402.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | No SVHC | 6 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1 | 26 ns | 50ns | 15 ns | 12 ns | 4.6A | 20V | SILICON | SWITCHING | 2W Ta 3.6W Tc | 0.093Ohm | 80V | N-Channel | 195pF @ 40V | 93m Ω @ 3.5A, 10V | 3V @ 250μA | 4.6A Tc | 7.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2753DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 1.041mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2753dnt1e4-datasheets-5435.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.075mm | 4.4mm | 1μA | 16 | 4.3V | 1.65V | 600mOhm | 16 | yes | 3 | 1μA | e3 | Matte Tin (Sn) | 1.385W | DUAL | GULL WING | 260 | 2.7V | 0.65mm | DG2753 | 16 | 1 | 40 | Multiplexer or Switches | 3 | Not Qualified | 65 ns | 40 ns | Single | SEPARATE OUTPUT | 1.2Ohm | 90 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 60ns | 2:1 | 1.65V~4.3V | SPDT | 2nA | 35pF | 60ns, 30ns | -25pC | 600m Ω (Max) | -90dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1469DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1469dht1e3-datasheets-7724.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.5W | 1 | Other Transistors | 3.2A | 12V | SILICON | SWITCHING | 20V | 20V | 1.5W Ta 2.78W Tc | 2.7A | 8A | 0.08Ohm | P-Channel | 470pF @ 10V | 80m Ω @ 2A, 10V | 1.5V @ 250μA | 2.7A Tc | 8.5nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LDQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 172.98879mg | 12V | 2.7V | 50Ohm | 16 | yes | 4 | e3 | Matte Tin (Sn) | 450mW | GULL WING | 260 | 5V | 0.65mm | DG412 | 16 | 1 | 40 | Multiplexer or Switches | 3/12/+-5V | 4 | Not Qualified | 280MHz | SPST | 50 ns | 35 ns | 6V | Dual, Single | 3V | -5V | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3460BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3460bdvt1e3-datasheets-9746.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | FET General Purpose Power | 5 ns | 15ns | 5 ns | 25 ns | 6.7A | 8V | SILICON | SWITCHING | 1V | 2W Ta 3.5W Tc | 8A | 20A | 0.027Ohm | 20V | N-Channel | 860pF @ 10V | 1 V | 27m Ω @ 5.1A, 4.5V | 1V @ 250μA | 8A Tc | 24nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9262DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9263dy-datasheets-2747.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 540.001716mg | 12V | 2.7V | 60Ohm | 8 | 400mW | DG9262 | 2 | 400mW | 2 | 8-SOIC | SPST | 75 ns | 50 ns | Single | 2 | 2 | 60Ohm | 1:1 | 2.7V~12V | SPST - NC | 100pA | 7pF | 75ns, 50ns | 2pC | 400mOhm | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS482EN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs482ent1ge3-datasheets-7303.pdf | PowerPAK® 1212-8 | 12 Weeks | PowerPAK® 1212-8 | 30V | 62W Tc | N-Channel | 1865pF @ 25V | 8.5mOhm @ 16.4A, 10V | 2.5V @ 250μA | 16A Tc | 39nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4599DL-T1-E3-HF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 10nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg4599dlt1e3-datasheets-3973.pdf | 6-TSSOP, SC-88, SOT-363 | 60Ohm | DG4599 | 1 | Single | 60Ohm | 2:1 | 2.25V~5.5V | SPDT | 1nA | 7pF 20pF | 30ns, 25ns | 5pC | -70dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8416DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8416dbt2e1-datasheets-8279.pdf | 6-UFBGA | 1.5mm | 310μm | 1mm | 43 Weeks | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | 2.77W | FET General Purpose Powers | 13 ns | 30ns | 20 ns | 40 ns | 16A | 5V | 8V | 350mV | 2.77W Ta 13W Tc | N-Channel | 1470pF @ 4V | 23m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 16A Tc | 26nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG429DW-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 20μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg428dje3-datasheets-5967.pdf | 18-SOIC (0.295, 7.50mm Width) | 12.45mm | 2.6mm | 8mm | 100μA | 18 | 8 Weeks | 36V | 13V | 150Ohm | 18 | No | 1 | 100μA | e3 | Matte Tin (Sn) | 470mW | GULL WING | 15V | DG429 | 18 | 4 | 470mW | 2 | 300 ns | 300 ns | 22V | Multiplexer | 250 ns | Dual, Single | 7V | -15V | 8 | 100Ohm | 75 dB | 5Ohm | BREAK-BEFORE-MAKE | 12V ±15V | 0.03A | 4:1 | SP4T | 500pA | 11pF 20pF | 150ns, 150ns | 1pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3459BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3459bdvt1ge3-datasheets-5068.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 216MOhm | 6 | yes | EAR99 | No | e4 | Silver (Ag) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 5 ns | 12ns | 10 ns | 18 ns | -2.9A | 20V | SILICON | SWITCHING | 60V | -3V | 3.3W Tc | 0.0022A | 30 pF | P-Channel | 350pF @ 30V | -3 V | 216m Ω @ 2.2A, 10V | 3V @ 250μA | 2.9A Tc | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG636EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg636ent1e4-datasheets-4736.pdf | 14-TSSOP (0.173, 4.40mm Width) | 5mm | 900μm | 4.4mm | Lead Free | 500nA | 14 | 12 Weeks | 140.30179mg | 12V | 2.7V | 160Ohm | 14 | yes | No | 2 | e3 | Matte Tin (Sn) | Non-Inverting | 450mW | GULL WING | 5V | DG636 | 14 | 2 | 450mW | 610MHz | 60 ns | 52 ns | 5V | 3V | Dual, Single | 2.7V | -5V | 4 | 30mA | 5V | 2 | 115Ohm | 58 dB | 1Ohm | BREAK-BEFORE-MAKE | 76ns | 90ns | 2.7V~12V ±2.7V~5V | 100A | 2:1 | SPDT | 100pA | 2.1pF 4.2pF | 60ns, 52ns | 0.1pC | 1 Ω | -88dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4884BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4884bdyt1e3-datasheets-0139.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 506.605978mg | 9mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 8 ns | 11ns | 8 ns | 22 ns | 16.5A | 20V | SILICON | SWITCHING | 2.5W Ta 4.45W Tc | 30V | N-Channel | 1525pF @ 15V | 9m Ω @ 10A, 10V | 3V @ 250μA | 16.5A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32453EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32453dbt2ge1-datasheets-8330.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32453 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA88DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sira88dpt1ge3-datasheets-1796.pdf | PowerPAK® SO-8 | 1.17mm | 5 | 14 Weeks | EAR99 | S17-0173-Single | unknown | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.3W | 1 | 150°C | R-PDSO-F5 | 28 ns | 8 ns | 16.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25W Tc | 45.5A | 0.0067Ohm | 5 mJ | 30V | N-Channel | 985pF @ 15V | 6.7m Ω @ 10A, 10V | 2.4V @ 250μA | 45.5A Tc | 12.5nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32468EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32468dbt2ge1-datasheets-2879.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32468 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4100DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4100dyt1e3-datasheets-6999.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 10 ns | 12ns | 10 ns | 15 ns | 4.4A | 20V | SILICON | SWITCHING | 2V | 2.5W Ta 6W Tc | 0.063Ohm | 100V | N-Channel | 600pF @ 50V | 63m Ω @ 4.4A, 10V | 4.5V @ 250μA | 6.8A Tc | 20nC @ 10V | 6V 10V | ±20V |
