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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| IRFB20N50KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfb20n50kpbf-datasheets-5495.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 210mOhm | 3 | No | 1 | Single | 280W | 1 | TO-220AB | 2.87nF | 22 ns | 74ns | 33 ns | 45 ns | 20A | 30V | 500V | 5V | 280W Tc | 250mOhm | 500V | N-Channel | 2870pF @ 25V | 250mOhm @ 12A, 10V | 5V @ 250μA | 20A Tc | 110nC @ 10V | 250 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishay-dg308bak883-datasheets-8509.pdf | 16-CDIP (0.300, 7.62mm) | 16 | 18 Weeks | 44V | 4V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 15V | 16 | Multiplexer or Switches | +-15V | 4 | 22V | 4V | -15V | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | 300ns | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7172ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7172adpt1re3-datasheets-5978.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 200V | N-Channel | 1110pF @ 100V | 50mOhm @ 10A, 10V | 3.1V @ 250μA | 19.5nC @ 10V | 7.5V 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG387AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg384aak883-datasheets-7766.pdf | 14-CDIP (0.300, 7.62mm) | 14 | 36V | 13V | 50Ohm | 14 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 15V | 14 | SPDT | Multiplexer or Switches | +-15V | 2 | 38535Q/M;38534H;883B | 22V | 7V | -15V | 50Ohm | BREAK-BEFORE-MAKE | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 10pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD014PBF | Vishay Siliconix | $1.17 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd014pbf-datasheets-8969.pdf | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 200mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 310pF | 10 ns | 50ns | 50 ns | 13 ns | 1.7A | 20V | 60V | 4V | 1.3W Ta | 140 ns | 200mOhm | 60V | N-Channel | 310pF @ 25V | 200mOhm @ 1A, 10V | 4V @ 250μA | 1.7A Ta | 11nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309AK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 16-DIP (0.300, 7.62mm) | 16 | 36V | 13V | 100Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | DUAL | 15V | 16 | 900mW | Multiplexer or Switches | +-15V | 22V | 7V | -15V | 4 | SEPARATE OUTPUT | 100Ohm | BREAK-BEFORE-MAKE | 200ns | NC | 1:1 | SPST - NC | ±15V | 1nA | 11pF 8pF | 200ns, 150ns | -10pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ14PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfz14pbf-datasheets-9763.pdf | 60V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 200mOhm | 3 | yes | EAR99 | No | 3 | 1 | Single | 36W | 1 | 10 ns | 50ns | 19 ns | 13 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 2V | 43W Tc | TO-220AB | 140 ns | 40A | 47 mJ | 60V | N-Channel | 300pF @ 25V | 4 V | 200m Ω @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | 16-DIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 500μA | 16 | 36V | 5V | 100Ohm | 16 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | NO | 900mW | 16 | 4 | DIFFERENTIAL MULTIPLEXER | Multiplexer or Switches | 2 | 150 ns | 150 ns | 20V | 15V | Dual, Single | 5V | 100Ohm | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 4:1 | SP4T | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu120pbf-datasheets-9324.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 270mOhm | 3 | No | 77A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 360pF | 6.8 ns | 27ns | 17 ns | 18 ns | 7.7A | 20V | 100V | 100V | 4V | 2.5W Ta 42W Tc | 270mOhm | N-Channel | 360pF @ 25V | 4 V | 270mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412HSAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 16-CDIP (0.300, 7.62mm) | 14 Weeks | 4 | 16-CERDIP | 35Ohm | 12V ±5V~20V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS67DN-T1-GE3 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss67dnt1ge3-datasheets-3158.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 30V | 65.8W Tc | P-Channel | 4380pF @ 15V | 5.5mOhm @ 15A, 10V | 2.5V @ 250μA | 60A Tc | 111nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Contains Lead | 1μA | 16 | 665.986997mg | 36V | 13V | 35Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 68 dB | BREAK-BEFORE-MAKE | 220ns | 5V~44V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR210TRRPBF | Vishay Siliconix | $0.85 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 200V | 200V | 2.5W Ta 25W Tc | TO-252AA | N-Channel | 140pF @ 25V | 1.5 Ω @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417BAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2016 | 8-CDIP (0.300, 7.62mm) | 7.62mm | 8 | 15 Weeks | 36V | 13V | 35Ohm | 8 | 1 | DUAL | 15V | 2.54mm | 8 | 1 | 600mW | Multiplexer or Switches | Not Qualified | 20V | 7V | -15V | 1 | SEPARATE OUTPUT | 35Ohm | 82 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 62ns, 53ns | 38pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR622DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir622dpt1ge3-datasheets-8525.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 150V | 6.25W Ta 104W Tc | N-Channel | 1516pF @ 75V | 17.7mOhm @ 20A, 10V | 4.5V @ 250μA | 12.6A Ta 51.6A Tc | 41nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2524DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg2523dnt1ge4-datasheets-8508.pdf | 19 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9010PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9010pbf-datasheets-4325.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 25W | 1 | Other Transistors | R-PSSO-G2 | 6.1 ns | 47ns | 35 ns | 13 ns | 5.3A | 20V | SILICON | DRAIN | SWITCHING | 50V | 25W Tc | 0.5Ohm | -50V | P-Channel | 240pF @ 25V | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 5.3A Tc | 9.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442LEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg442ledyt1ge3-datasheets-7337.pdf | 16-TSSOP (0.173, 4.40mm Width) | 20 Weeks | 26Ohm | 16 | NOT SPECIFIED | NOT SPECIFIED | 4 | 26Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 60ns, 35ns | 6.6pC | 100m Ω | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR140DP-T1-GE3 | Vishay Siliconix | $2.10 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr140dpt1ge3-datasheets-4746.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 25V | 6.25W Ta 125W Tc | N-Channel | 8150pF @ 10V | 0.67mOhm @ 20A, 10V | 2.1V @ 250μA | 79A Ta 100A Tc | 170nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9233EDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg9233edyge3-datasheets-1801.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 4mm | 8 | 21 Weeks | 2 | YES | DUAL | GULL WING | NOT SPECIFIED | 3V | 5.5V | 1 | NOT SPECIFIED | 2 | R-PDSO-G8 | 25Ohm | 1:1 | 2.7V~5.5V | SPST - NO | 100pA | 3.8pF | 75ns, 50ns | -0.78pC | 400m Ω | -108dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU220PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfu220pbf-datasheets-5110.pdf | 200V | 4.8A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 800mOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | Not Qualified | 7.2 ns | 22ns | 13 ns | 19 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 200V | N-Channel | 260pF @ 25V | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 4.8A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LEDJ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 5.08mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-PowerDIP (0.300, 7.62mm) | 20.13mm | 7.62mm | 16 | 16 Weeks | 26Ohm | 16 | 4 | Pure Matte Tin (Sn) | NO | DUAL | NOT SPECIFIED | 5V | 1 | NOT SPECIFIED | 4 | -5V | 26Ohm | 68 dB | 60ns | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ34SPBF | Vishay Siliconix | $1.88 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz34spbf-datasheets-5430.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 8 Weeks | 50MOhm | 3 | No | 1 | TO-263 (D2Pak) | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 30A | 10V | 60V | 3.7W Ta 88W Tc | 50mOhm | N-Channel | 1600pF @ 25V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 8-CDIP (0.300, 7.62mm) | 10.16mm | 3.94mm | 7.62mm | 1μA | 8 | 36V | 13V | 35Ohm | 8 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | NO | 600mW | 2.54mm | 8 | Multiplexer or Switches | 1 | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 35Ohm | 35Ohm | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP70090E-GE3 | Vishay Siliconix | $2.53 |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70090ege3-datasheets-5818.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 125W Tc | TO-220AB | 120A | 0.0089Ohm | 80 mJ | N-Channel | 1950pF @ 50V | 8.9m Ω @ 20A, 10V | 4V @ 250μA | 50A Tc | 50nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 8-CDIP (0.300, 7.62mm) | 7.62mm | 8 | 14 Weeks | 12V | 2.7V | 20Ohm | 8 | no | No | 1 | NO | DUAL | 5V | 2.54mm | 8 | 1 | Multiplexer or Switches | 1 | 6V | 3V | -5V | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 32ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP180N60E-GE3 | Vishay Siliconix | $2.76 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp180n60ege3-datasheets-6043.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 156W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg442bdj-datasheets-7370.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 25V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | YES | 900mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | 4 | Not Qualified | 220 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG21N60EF-GE3 | Vishay Siliconix | $15.48 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg21n60efge3-datasheets-6421.pdf | TO-247-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 227W Tc | TO-247AC | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG642DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 15V | 500MHz | 6mA | 8 | 930.006106mg | Unknown | 18V | 10V | 8Ohm | 8 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 300mW | DUAL | 8 | DPST | 300mW | Multiplexer or Switches | 100 ns | 60 ns | 15V | 12V | Single | 10V | 2 | 1 | 8Ohm | 8Ohm | BREAK-BEFORE-MAKE | 3V~15V ±3V~15V | 2:1 | SPDT | 10nA | 20pF 20pF | 100ns, 60ns | 40pC | 500m Ω | -85dB @ 5MHz |
