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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7382DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7382dpt1e3-datasheets-6112.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | R-XDSO-C5 | 18 ns | 16ns | 20 ns | 67 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 50A | 0.0047Ohm | 45 mJ | N-Channel | 4.7m Ω @ 24A, 10V | 3V @ 250μA | 14A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQJ958EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj958ept1ge3-datasheets-7120.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 35W | 175°C | 5 ns | 18 ns | 20A | 20V | 60V | 2 N-Channel (Dual) | 1075pF @ 30V | 34.9m Ω @ 4.5A, 10V | 2.5V @ 250μA | 20A Tc | 23nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6443DQ-T1-E3 | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6443dqt1e3-datasheets-7408.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 12MOhm | 8 | Single | 1.5W | 1 | 8-TSSOP | 21ns | 68 ns | 115 ns | 7.3A | 20V | 30V | 1.05W Ta | 12mOhm | 30V | P-Channel | 12mOhm @ 8.8A, 10V | 3V @ 250μA | 7.3A Ta | 60nC @ 5V | 12 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ952EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj952ept1ge3-datasheets-7856.pdf | PowerPAK® SO-8 Dual | Lead Free | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60V | 25W Tc | 2 N-Channel (Dual) | 1800pF @ 30V | 20m Ω @ 10.3A, 10V | 2.5V @ 250μA | 23A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3475DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3475dvt1e3-datasheets-8173.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 1.61Ohm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.2W | DUAL | GULL WING | 260 | 6 | Single | 30 | 2W | 2 | Other Transistors | 29ns | 14 ns | 23 ns | 750mA | 20V | 0.95A | 200V | P-Channel | 500pF @ 50V | 1.61 Ω @ 900mA, 10V | 4V @ 250μA | 950mA Tc | 18nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| SQ1922AEEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sq1922aeeht1ge3-datasheets-9933.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | SC-70-6 | 20V | 1.5W Tc | 2 N-Channel (Dual) | 60pF @ 10V | 300mOhm @ 400mA, 4.5V | 2.5V @ 250μA | 850mA Tc | 1.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4620DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4620dyt1e3-datasheets-8539.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2W | 1 | 16 ns | 36ns | 17 ns | 21 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta 3.1W Tc | 6A | 40A | 0.035Ohm | 30V | N-Channel | 1040pF @ 15V | 35m Ω @ 6A, 10V | 2.5V @ 250μA | 6A Ta 7.5A Tc | 13nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI4922BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4922bdyt1e3-datasheets-5484.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4922 | 8 | 2 | Dual | 30 | 2W | 2 | 13 ns | 53ns | 54 ns | 68 ns | 8A | 12V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.1W | 8A | 2 N-Channel (Dual) | 2070pF @ 15V | 1.8 V | 16m Ω @ 5A, 10V | 1.8V @ 250μA | 62nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||
| SI4487DY-T1-GE3 | Vishay Siliconix | $2.10 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4487dyt1ge3-datasheets-2217.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 15 Weeks | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.5W | 1 | 9 ns | 8ns | 10 ns | 28 ns | 8.2A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5W Ta 5W Tc | 0.0205Ohm | -30V | P-Channel | 1075pF @ 15V | 20.5m Ω @ 10A, 10V | 2.5V @ 250μA | 11.6A Tc | 36nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| SI5935CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5935cdct1e3-datasheets-1877.pdf | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 14 Weeks | 84.99187mg | No SVHC | 100MOhm | 8 | yes | EAR99 | Tin | No | e4 | Silver (Ag) | 3.1W | C BEND | 260 | SI5935 | 8 | Dual | 30 | 1.3W | 2 | Other Transistors | 10 ns | 32ns | 6 ns | 25 ns | 3.1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 4A | 2 P-Channel (Dual) | 455pF @ 10V | 100m Ω @ 3.1A, 4.5V | 1V @ 250μA | 4A | 11nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||
| SIE836DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie836dft1ge3-datasheets-2516.pdf | 10-PolarPAK® (SH) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 15 ns | 10ns | 10 ns | 20 ns | 4.1A | 30V | SILICON | DRAIN SOURCE | SWITCHING | 5.2W Ta 104W Tc | 18.3A | 15A | 0.13Ohm | 1.25 mJ | 200V | N-Channel | 1200pF @ 100V | 130m Ω @ 4.1A, 10V | 4.5V @ 250μA | 18.3A Tc | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SQ9945BEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq9945beyt1ge3-datasheets-4115.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 12 Weeks | 506.605978mg | Unknown | 64mOhm | 8 | No | 4W | 2 | Dual | 8-SO | 470pF | 6 ns | 2.8ns | 1.7 ns | 17 ns | 5.4A | 20V | 60V | 2V | 4W | 64mOhm | 60V | 2 N-Channel (Dual) | 470pF @ 25V | 64mOhm @ 3.4A, 10V | 2.5V @ 250μA | 5.4A | 12nC @ 10V | Logic Level Gate | 64 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7840BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7840bdpt1e3-datasheets-3139.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | 8.5mOhm | yes | EAR99 | FAST SWITCHING | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 17 ns | 14ns | 14 ns | 39 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 50A | 20 mJ | N-Channel | 8.5m Ω @ 16.5A, 10V | 3V @ 250μA | 11A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI5515CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5515cdct1e3-datasheets-6614.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | DUAL | C BEND | 260 | SI5515 | 8 | 30 | 1.3W | 2 | 4A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 4A | 0.036Ohm | N and P-Channel | 632pF @ 10V | 36m Ω @ 6A, 4.5V | 800mV @ 250μA | 11.3nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI7886ADP-T1-GE3 | Vishay Siliconix | $1.22 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7886adpt1e3-datasheets-3150.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 4mOhm | 1 | Single | PowerPAK® SO-8 | 6.45nF | 17 ns | 14ns | 43 ns | 158 ns | 15A | 12V | 30V | 1.9W Ta | 4mOhm | 30V | N-Channel | 6450pF @ 15V | 4mOhm @ 25A, 10V | 1.5V @ 250μA | 15A Ta | 60nC @ 4.5V | 4 mΩ | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ963EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqj963ept1ge3-datasheets-5777.pdf | PowerPAK® SO-8 Dual | 12 Weeks | 8 | No | 27W | 2 | Dual | 27W | 2 | PowerPAK® SO-8 Dual | 11 ns | 13ns | 8 ns | 36 ns | 8A | 20V | 60V | 27W Tc | 115mOhm | 2 P-Channel (Dual) | 1140pF @ 30V | 85mOhm @ 3.5A, 10V | 2.5V @ 250μA | 8A Tc | 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD25N04-25-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud25n0425e3-datasheets-3228.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 1.437803g | 1 | Single | 3W | 1 | TO-252, (D-Pak) | 510pF | 5 ns | 47ns | 5 ns | 15 ns | 25A | 20V | 40V | 3W Ta 33W Tc | 25mOhm | 40V | N-Channel | 510pF @ 25V | 25mOhm @ 25A, 10V | 3V @ 250μA | 25A Tc | 20nC @ 10V | 25 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7994DP-T1-GE3 | Vishay Siliconix | $22.56 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7994dpt1ge3-datasheets-7311.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | Unknown | 56MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.5W | C BEND | 260 | SI7994 | 8 | 2 | 40 | 3.5W | 2 | FET General Purpose Powers | R-XDSO-C6 | 35 ns | 15ns | 15 ns | 40 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 46W | 2 N-Channel (Dual) | 3500pF @ 15V | 5.6m Ω @ 20A, 10V | 3V @ 250μA | 80nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| SUD45P03-15-E3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud45p0315e3-datasheets-3272.pdf | -30V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 1.437803g | 3 | 1 | Single | 70W | TO-252, (D-Pak) | 3.2nF | 15 ns | 18ns | 47 ns | 60 ns | 13A | 20V | 30V | 4W Ta 70W Tc | 15mOhm | P-Channel | 3200pF @ 25V | 15mOhm @ 13A, 10V | 1V @ 250μA (Min) | 125nC @ 10V | 15 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120N10-3M8_GE3 | Vishay Siliconix | $3.23 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n103m8ge3-datasheets-9534.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 100V | 375W Tc | N-Channel | 7230pF @ 25V | 3.8mOhm @ 20A, 10V | 3.5V @ 250μA | 120A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP60N10-18P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup60n1018pe3-datasheets-3313.pdf | TO-220-3 | Lead Free | 3 | Unknown | 18.3mOhm | 3 | EAR99 | No | SINGLE | 3 | 3.75W | 1 | FET General Purpose Power | 12 ns | 10ns | 8 ns | 18 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 4.5V | 3.75W Ta 150W Tc | TO-220AB | N-Channel | 2600pF @ 50V | 4.5 V | 18.3m Ω @ 15A, 10V | 4.5V @ 250μA | 60A Tc | 75nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIZ704DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz704dtt1ge3-datasheets-4818.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 6 | 14 Weeks | 6 | yes | EAR99 | No | e3 | MATTE TIN | 30W | 260 | SIZ704 | 6 | 2 | Dual | 40 | 2 | FET General Purpose Power | 15 ns | 12ns | 10 ns | 13 ns | 16A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 20W 30W | 9.4A | 30A | 5 mJ | 30V | 2 N-Channel (Half Bridge) | 435pF @ 15V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 12A 16A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SUM70N03-09CP-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum70n0309cpe3-datasheets-3441.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 1.437803g | No SVHC | 9.5mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 80ns | 8 ns | 22 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.75W Ta 93W Tc | 30V | N-Channel | 2200pF @ 25V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 70A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI6968BEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si6968bedqt1e3-datasheets-5597.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | 22MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1W | GULL WING | 260 | SI6968 | 8 | Dual | 30 | 1W | 2 | FET General Purpose Powers | 150°C | 245 ns | 330ns | 330 ns | 860 ns | 5.2A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) Common Drain | 22m Ω @ 6.5A, 4.5V | 1.6V @ 250μA | 18nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SIHG30N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg30n60ege3-datasheets-4581.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 17 Weeks | 38.000013g | Unknown | 125mOhm | 3 | No | 1 | Single | 250W | 1 | TO-247AC | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SI2318DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2318dst1e3-datasheets-7122.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 45mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 150°C | 5 ns | 12ns | 12 ns | 20 ns | 3.9A | 20V | SILICON | SWITCHING | 3V | 750mW Ta | 3A | 40V | N-Channel | 540pF @ 20V | 3 V | 45m Ω @ 3.9A, 10V | 3V @ 250μA | 3A Ta | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SUD40N04-10A-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud40n0410ae3-datasheets-2968.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | Lead Free | 2 | 10mOhm | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 71W | 1 | FET General Purpose Power | 14 ns | 7.5ns | 14 ns | 30 ns | 40A | 20V | SILICON | DRAIN | 71W Tc | 40V | N-Channel | 1700pF @ 25V | 10m Ω @ 40A, 10V | 3V @ 250μA | 40A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLL110TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irll110trpbf-datasheets-8859.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 3 | 8 Weeks | 250.212891mg | Unknown | 540mOhm | 4 | yes | EAR99 | AVALANCHE RATED | Tin | No | DUAL | GULL WING | 260 | 4 | 1 | 40 | 2W | 1 | 150°C | R-PDSO-G3 | 9.3 ns | 47ns | 18 ns | 16 ns | 1.5A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2W Ta 3.1W Tc | 50 mJ | 100V | N-Channel | 250pF @ 25V | 540m Ω @ 900mA, 5V | 2V @ 250μA | 1.5A Tc | 6.1nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||
| SUP75P05-08-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sup75p0508e3-datasheets-3242.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 3 | Single | 30 | 250W | 1 | Other Transistors | Not Qualified | 13 ns | 140ns | 175 ns | 115 ns | -75A | 20V | SILICON | DRAIN | 55V | -2V | 3.7W Ta 250W Tc | TO-220AB | 240A | 0.008Ohm | 30V | P-Channel | 8500pF @ 25V | -2 V | 8m Ω @ 30A, 10V | 3V @ 250μA | 75A Tc | 225nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI7852DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7852dpt1e3-datasheets-0287.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 16.5mOhm | 8 | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 17 ns | 11ns | 11 ns | 40 ns | 12.5A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 7.6A | 50A | 80V | N-Channel | 2 V | 16.5m Ω @ 10A, 10V | 2V @ 250μA (Min) | 7.6A Ta | 41nC @ 10V | 6V 10V | ±20V |
