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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Reach Compliance Code | Number of Functions | Voltage - Input (Max) | JESD-609 Code | Feature | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Power | Output Voltage | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Max Output Power | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Input Voltage-Nom | Power Dissipation-Max | Topology | Synchronous Rectifier | Efficiency | Control Mode | Switcher Configuration | Voltage - Output (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Voltage - Input (Min) | Switch-on Time-Max | Avalanche Energy Rating (Eas) | Current - Output | Voltage - Output (Min/Fixed) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Frequency - Switching | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 3N163-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-3n1632-datasheets-9363.pdf | TO-206AF, TO-72-4 Metal Can | Lead Free | Unknown | 250Ohm | 4 | Tin | No | 1 | Single | 375mW | TO-72 | 3.5pF | 5 ns | 13ns | 25 ns | -50mA | 30V | 40V | -2.5V | 375mW Ta | 250Ohm | -40V | P-Channel | 3.5pF @ 15V | -2.5 V | 250Ohm @ 100μA, 20V | 5V @ 10μA | 50mA Ta | 250 Ω | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD19N20-90-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud19n2090e3-datasheets-2162.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 90mOhm | 3 | yes | EAR99 | Tin | No | 19A | e3 | 200V | GULL WING | 260 | 4 | 1 | Single | 30 | 3W | 1 | FET General Purpose Powers | R-PSSO-G2 | 15 ns | 50ns | 60 ns | 30 ns | 19A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 3W Ta 136W Tc | 200V | N-Channel | 1800pF @ 25V | 4 V | 90m Ω @ 5A, 10V | 4V @ 250μA | 19A Tc | 51nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS38N60L | Vishay Siliconix | $75.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps38n60lpbf-datasheets-4956.pdf | TO-274AA | 15.6mm | 20.3mm | 5mm | 3 | No | 1 | Single | SUPER-247™ (TO-274AA) | 7.99nF | 44 ns | 130ns | 69 ns | 92 ns | 38A | 30V | 600V | 540W Tc | 150mOhm | 600V | N-Channel | 7990pF @ 25V | 150mOhm @ 23A, 10V | 5V @ 250μA | 38A Tc | 320nC @ 10V | 150 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7157DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7157dpt1ge3-datasheets-4683.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 6.25W | 1 | R-PDSO-C5 | 20 ns | 14ns | 55 ns | 220 ns | -60A | 12V | SILICON | DRAIN | SWITCHING | 20V | -1.4V | 6.25W Ta 104W Tc | 300A | -20V | P-Channel | 22000pF @ 10V | 1.6m Ω @ 25A, 10V | 1.4V @ 250μA | 60A Tc | 625nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA34DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira34dpt1ge3-datasheets-0575.pdf | PowerPAK® SO-8 | 5 | 22 Weeks | 506.605978mg | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.3W | 1 | FET General Purpose Power | R-PDSO-C5 | 11 ns | 11ns | 6 ns | 19 ns | 40A | -16V | SILICON | DRAIN | SWITCHING | 3.3W Ta 31.25W Tc | 0.0067Ohm | 5 mJ | 30V | N-Channel | 1100pF @ 15V | 6.7m Ω @ 10A, 10V | 2.4V @ 250μA | 40A Tc | 25nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRC16DP-T1-GE3 | Vishay Siliconix | $2.40 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sirc16dpt1ge3-datasheets-6826.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 25V | 54.3W Tc | N-Channel | 5150pF @ 10V | 0.96m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 48nC @ 4.5V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1406DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1406dht1ge3-datasheets-1976.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | Unknown | 65mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 40 | 1W | 1 | FET General Purpose Powers | 155pF | 27 ns | 47ns | 29 ns | 54 ns | 3.1A | 8V | SILICON | SWITCHING | 450mV | 1W Ta | 20V | N-Channel | 450 mV | 65m Ω @ 3.9A, 4.5V | 1.2V @ 250μA | 3.1A Ta | 7.5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7818DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7818dnt1e3-datasheets-8452.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 135mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | R-XDSO-C5 | 10 ns | 10ns | 10 ns | 25 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 150V | 4V | 1.5W Ta | 2.2A | 4 mJ | N-Channel | 135m Ω @ 3.4A, 10V | 4V @ 250μA | 2.2A Ta | 30nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-12P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0312pge3-datasheets-2078.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | Tin | 1 | Single | TO-252 | 1.6nF | 9 ns | 15ns | 12 ns | 20 ns | 17.5A | 20V | 30V | 39W Tc | 12mOhm | 30V | N-Channel | 1600pF @ 25V | 17mOhm @ 20A, 10V | 3V @ 250μA | 16.8A Ta | 42nC @ 10V | 17 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ431EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj431ept1ge3-datasheets-9445.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 200V | 83W Tc | 178mOhm | P-Channel | 4355pF @ 25V | 213mOhm @ 1A, 4V | 3.5V @ 250μA | 12A Tc | 160nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1428EDH-T1-GE3 | Vishay Siliconix | $25.94 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1428edht1ge3-datasheets-3524.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | EAR99 | unknown | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | 4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | 30V | 2.8W Tc | 4A | 0.045Ohm | N-Channel | 45m Ω @ 3.7A, 10V | 1.3V @ 250μA | 4A Tc | 13.5nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS410DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis410dnt1ge3-datasheets-2517.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 4.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 8 | Single | 5.2W | 1 | FET General Purpose Power | S-PDSO-C5 | 25 ns | 15ns | 15 ns | 30 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.8W Ta 52W Tc | 22A | 60A | N-Channel | 1600pF @ 10V | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7794DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® Gen III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7794dpt1ge3-datasheets-5030.pdf | PowerPAK® SO-8 | 5 | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 30 | 5W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 10ns | 10 ns | 30 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 5W Ta 48W Tc | 0.0034Ohm | N-Channel | 2.52nF @ 15V | 3.4m Ω @ 20A, 10V | 2.5V @ 250μA | 28.6A Ta 60A Tc | 72nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1012CR-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1012crt1ge3-datasheets-5114.pdf | SC-75, SOT-416 | 1.68mm | 800μm | 860μm | Lead Free | 3 | 14 Weeks | 2.012816mg | No SVHC | 396mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | Single | 240mW | 1 | 150°C | 11 ns | 16ns | 11 ns | 26 ns | 630mA | 8V | SILICON | SWITCHING | 400mV | 240mW Ta | 20V | N-Channel | 43pF @ 10V | 396m Ω @ 600mA, 4.5V | 1V @ 250μA | 2nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32416DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Digi-Reel® | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sip32416dnpt1ge4-datasheets-6370.pdf | 8-UFDFN Exposed Pad | 8 | 14 Weeks | 50.008559mg | Unknown | 76mOhm | 8 | On/Off | EAR99 | 5.5V | 1 | Load Discharge, Slew Rate Controlled | 580mW | DUAL | NO LEAD | NOT SPECIFIED | 0.5mm | SIP32416 | 8 | DUAL SWITCHING CONTROLLER | NOT SPECIFIED | 580mW | 2.4A | 5V | 2A | N-Channel | 1.1V~5.5V | 3.8 ms | 1 μs | 2 | General Purpose | High Side | Reverse Current | 5V | Not Required | 62m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2312BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2312bdst1e3-datasheets-6507.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 31mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 9 ns | 30ns | 10 ns | 35 ns | 5A | 8V | 20V | SILICON | SWITCHING | 850mV | 750mW Ta | 20V | N-Channel | 450 mV | 31m Ω @ 5A, 4.5V | 850mV @ 250μA | 3.9A Ta | 12nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32441DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | Non-RoHS Compliant | /files/vishaysiliconix-sip32441dnpt1ge4-datasheets-4020.pdf | 4-UDFN Exposed Pad | 16 Weeks | On/Off | EAR99 | unknown | e4 | Slew Rate Controlled | Palladium/Gold (Pd/Au) | 260 | 30 | N-Channel | 1.7V~5.5V | 1 | General Purpose | High Side | Reverse Current, UVLO | 3A | Not Required | 38m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3456DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3456ddvt1ge3-datasheets-0664.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 40mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.7W | 1 | FET General Purpose Power | 12 ns | 13ns | 13 ns | 16 ns | 5A | 20V | SILICON | SWITCHING | 1.2V | 1.7W Ta 2.7W Tc | 5A | 30V | N-Channel | 325pF @ 15V | 40m Ω @ 5A, 10V | 3V @ 250μA | 6.3A Tc | 9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32408DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sip32409dnpt1ge4-datasheets-0144.pdf | 4-UFDFN Exposed Pad | Lead Free | 4 | 16 Weeks | 50.008559mg | Unknown | 52mOhm | 4 | On/Off | 5.5V | 1 | Slew Rate Controlled | 735mW | DUAL | NO LEAD | NOT SPECIFIED | 1.2V | 0.5mm | 1 | AUDIO/VIDEO SWITCH | NOT SPECIFIED | 735mW | 3.5A | 3.5A | N-Channel | 1.1V~5.5V | 1.8 ms | 1 μs | 1 | General Purpose | High Side | Reverse Current | 3800000ns | Not Required | 44m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISF02DN-T1-GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisf02dnt1ge3-datasheets-1923.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 25V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2650pF @ 10V | 3.5mOhm @ 7A, 10V | 2.3V @ 250μA | 30.5A Ta 60A Tc | 56nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3865CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3865cdvt1ge3-datasheets-0081.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | On/Off | No | Slew Rate Controlled | 830mW | SI3865 | Dual | 830mW | 6-TSOP | 1A | P-Channel | 1.8V~12V | 2.8A | 8V | 1 | General Purpose | High Side | 2.8A | 60mOhm | 50mOhm | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1023X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1023xt1ge3-datasheets-3425.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 8.193012mg | Unknown | 1.2Ohm | 6 | 250mW | SI1023 | 2 | Dual | 250mW | 2 | SC-89-6 | 14ns | 46 ns | -350mA | 6V | 20V | 250mW | 2.7Ohm | -20V | 2 P-Channel (Dual) | -450 mV | 1.2Ohm @ 350mA, 4.5V | 450mV @ 250μA (Min) | 370mA | 1.5nC @ 4.5V | Logic Level Gate | 1.2 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32411DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32411drt1ge3-datasheets-9261.pdf | 4-UFDFN Exposed Pad | 4 | 16 Weeks | 50.008559mg | 76mOhm | 4 | On/Off | yes | No | 5.5V | 1 | Load Discharge, Slew Rate Controlled | 324mW | DUAL | 260 | 5V | 0.5mm | SIP32411 | 4 | 1 | SPST | 40 | 324mW | 2A | 2A | N-Channel | 1.1V~5.5V | 210 μs | 1 μs | 1 | General Purpose | High Side | Reverse Current | 220000ns | Not Required | 62m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1912EDH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1912edht1e3-datasheets-4349.pdf | 6-TSSOP, SC-88, SOT-363 | 2.05mm | 900μm | 1.25mm | Lead Free | 6 | No SVHC | 280mOhm | 6 | yes | EAR99 | ESD PROTECTION | No | e3 | Matte Tin (Sn) | 570mW | GULL WING | 260 | SI1912 | 6 | Dual | 30 | 570mW | 2 | FET General Purpose Powers | 45 ns | 85ns | 85 ns | 350 ns | 1.28A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 450mV | 1.13A | 20V | 2 N-Channel (Dual) | 450 mV | 280m Ω @ 1.13A, 4.5V | 450mV @ 100μA (Min) | 1.13A | 1nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC438AED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic438aedt1ge3-datasheets-3237.pdf | 24-PowerWFQFN | 12 Weeks | 28V | PowerPAK® MLP44-24 | 20V | Adjustable | Step-Down | 1 | Positive | Buck | Yes | 20V | 3V | 8A | 0.6V | 300kHz~1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4567DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4567dyt1e3-datasheets-4470.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No SVHC | 60mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.95W | GULL WING | 260 | SI4567 | 8 | Dual | 40 | 2.75W | 2 | Other Transistors | 93ns | 93 ns | 19 ns | 3.6A | 16V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.2V | 2.75W 2.95W | 4.1A | 40V | N and P-Channel | 355pF @ 20V | 2.2 V | 60m Ω @ 4.1A, 10V | 2.2V @ 250μA | 5A 4.4A | 12nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP12504DMP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | PowerPAK® MLP33-6 | 14 Weeks | SIP12504 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4973DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4973dyt1e3-datasheets-4561.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | Unknown | 23mOhm | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4973 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | Not Qualified | 10 ns | 15ns | 90 ns | 115 ns | 7.6A | 25V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30V | 2 P-Channel (Dual) | -3 V | 23m Ω @ 7.6A, 10V | 3V @ 250μA | 5.8A | 56nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9102DN02-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BCDMOS | 4.57mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9102dn02t1e3-datasheets-5233.pdf | 20-LCC (J-Lead) | 8.9662mm | 8.9662mm | 13.5V | Lead Free | 20 | 722.005655mg | 20 | yes | EAR99 | 120V | e3 | Matte Tin (Sn) | QUAD | J BEND | 250 | SI9102 | SWITCHING REGULATOR | 40 | Switching Regulator or Controllers | 3W | 4V | 150μA | Fixed | Step-Up/Step-Down | 1 | 3W | Positive, Isolation Capable | 10V | Flyback, Forward Converter | No | 80 % | CURRENT-MODE | SINGLE | 10V | 40kHz~1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5513DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5513dct1e3-datasheets-4604.pdf | 8-SMD, Flat Lead | 3.0988mm | 1.0922mm | 1.7018mm | Lead Free | No SVHC | 155mOhm | 8 | No | 1.1W | SI5513 | Dual | 1.1W | 2 | 1206-8 ChipFET™ | 13 ns | 35ns | 35 ns | 25 ns | 4.2A | 12V | 20V | 20V | 1.5V | 1.1W | 130mOhm | 20V | N and P-Channel | 1.5 V | 75mOhm @ 3.1A, 4.5V | 1.5V @ 250μA | 3.1A 2.1A | 6nC @ 4.5V | Logic Level Gate | 75 mΩ |
