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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | Evaluation Kit | Nominal Supply Current | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Output Voltage | Voltage - Input | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Main Purpose | Nominal Vgs | Board Type | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG418LDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 12 Weeks | 540.001716mg | 12V | 2.7V | 20Ohm | 8 | yes | VIDEO APPLICATION | unknown | 1 | e3 | MATTE TIN | 400mW | GULL WING | 260 | 5V | DG418 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | Not Qualified | SPST | 41 ns | 32 ns | 6V | Dual, Single | 3V | -5V | 1 | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 33ns | 44ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3469EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sq3469evt1ge3-datasheets-5121.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 19.986414mg | 6 | No | 1 | Single | 6-TSOP | 1.02nF | 13 ns | 10ns | 10 ns | 32 ns | 8A | 20V | 20V | 5W Tc | 36mOhm | -20V | P-Channel | 1020pF @ 10V | 36mOhm @ 6.7A, 10V | 2.5V @ 25μA | 8A Tc | 27nC @ 10V | 36 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2733DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg2731dqt1e3-datasheets-4047.pdf | 10-VFDFN Exposed Pad | 3mm | 880μm | 3mm | 1μA | 10 | 50.008559mg | 4.3V | 1.65V | 400mOhm | 10 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.191W | DUAL | NO LEAD | 260 | 3V | 0.5mm | DG2733 | 10 | 1 | 40 | Multiplexer or Switches | 2 | Not Qualified | 110 ns | 30 ns | Single | SEPARATE OUTPUT | 450mOhm | 75 dB | 0.03Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.65V~4.3V | SPDT | 1nA | 104pF | 110ns, 30ns | 9pC | 30m Ω | -75dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4436DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4436dyt1ge3-datasheets-6502.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 36MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 10 ns | 15ns | 10 ns | 25 ns | 8A | 20V | SILICON | SWITCHING | 2.5V | 2.5W Ta 5W Tc | 8A | 25A | 60V | N-Channel | 1100pF @ 30V | 36m Ω @ 4.6A, 10V | 2.5V @ 250μA | 8A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG643DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 3.5mA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500MHz | 6mA | 16 | 547.485991mg | 21V | 10V | 15Ohm | yes | VIDEO APPLICATION | unknown | 1 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG643 | 16 | 2 | AUDIO/VIDEO SWITCH | 40 | Multiplexer or Switches | 15-3V | 2 | Not Qualified | R-PDSO-G16 | 70 ns | 50 ns | 15V | Dual, Single | 10V | -3V | SEPARATE OUTPUT | 15Ohm | 60 dB | 1Ohm | BREAK-BEFORE-MAKE | 85ns | 140ns | NO/NC | 3V~15V ±3V~15V | 2:1 | SPDT | 10nA | 12pF 12pF | 70ns, 50ns | 19pC | 1 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ481EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj481ept1ge3-datasheets-7261.pdf | 8-PowerTDFN | 12 Weeks | PowerPAK® SO-8 | 80V | 45W Tc | P-Channel | 2000pF @ 25V | 80mOhm @ 10A, 10V | 2.5V @ 250μA | 16A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9431DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg9431edyge3-datasheets-8821.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 1μA | 8 | 540.001716mg | 12V | 2.7V | 30Ohm | 8 | yes | unknown | 1 | 1μA | e3 | MATTE TIN | 400mW | DUAL | GULL WING | 260 | 3V | DG9431 | 8 | 1 | 40 | 400mW | Not Qualified | 75 ns | 50 ns | Single | 2 | 1 | 30Ohm | 30Ohm | 74 dB | 0.4Ohm | 2:1 | 2.7V~5V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2337DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si2337dst1e3-datasheets-2246.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 270MOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 760mW | 1 | Other Transistors | 15 ns | 18ns | 12 ns | 20 ns | -2.2A | 20V | SILICON | 80V | -4V | 760mW Ta 2.5W Tc | -80V | P-Channel | 500pF @ 40V | -4 V | 270m Ω @ 1.2A, 10V | 4V @ 250μA | 2.2A Tc | 17nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441LDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 10μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg441ldy-datasheets-2707.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 172.98879mg | Unknown | 12V | 2.7V | 35Ohm | 16 | yes | 4 | e3 | PURE MATTE TIN | 450mW | GULL WING | 260 | 5V | 0.65mm | DG441 | 16 | 1 | 30 | 450mW | Multiplexer or Switches | Not Qualified | 280MHz | SPST | 60 ns | 35 ns | 6V | 5V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 30Ohm | 17Ohm | 68 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 70ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4134DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-si4134dyt1ge3-datasheets-8902.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 14MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 5W | 1 | 15 ns | 12ns | 10 ns | 14 ns | 9.9A | 20V | SILICON | SWITCHING | 1.8V | 2.5W Ta 5W Tc | 30V | N-Channel | 846pF @ 15V | 14m Ω @ 10A, 10V | 2.5V @ 250μA | 14A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG612AEQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612aent1e4-datasheets-7227.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 100μA | 16 | 172.98879mg | 12V | 2.7V | 72Ohm | 16 | yes | ALSO OPERATE WITH 5V AND 3V SUPPLY | 4 | e3 | Matte Tin (Sn) | 450mW | GULL WING | NOT SPECIFIED | 3V | 0.65mm | DG612 | 16 | 1 | NOT SPECIFIED | 450mW | Multiplexer or Switches | Not Qualified | 720MHz | SPST | 55 ns | 35 ns | 5V | Dual, Single | 2.7V | -3V | 4 | SEPARATE OUTPUT | 115Ohm | 62 dB | 0.7Ohm | BREAK-BEFORE-MAKE | 50ns | 90ns | NO | 2.7V~12V ±2.7V~5V | 1:1 | SPST - NO | 100pA | 2pF 3pF | 55ns, 35ns | 1pC | 700m Ω | -90dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS850EN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqs850ent1ge3-datasheets-9787.pdf | PowerPAK® 1212-8 | 5 | 12 Weeks | EAR99 | AEC-Q101 | YES | DUAL | FLAT | 240 | 40 | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 33W Tc | 12A | 48A | 0.0215Ohm | 26 mJ | N-Channel | 2021pF @ 30V | 21.5m Ω @ 6.1A, 10V | 2.5V @ 250μA | 12A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9426DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 5μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg9424dqt1-datasheets-2818.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 1μA | 16 | 172.98879mg | No SVHC | 12V | 2.7V | 3Ohm | 16 | 4 | 20nA | e3 | Matte Tin (Sn) | 450mW | GULL WING | 0.635mm | DG9426 | DPDT | 450mW | Multiplexer or Switches | 3/12/+-5V | Not Qualified | SPST | 57 ns | 42 ns | 6V | Dual, Single | 3V | 4 | SEPARATE OUTPUT | 3Ohm | BREAK-BEFORE-MAKE | 3V~16V ±3V~8V | 1:1 | SPST - NO/NC | 1nA | 49pF 37pF | 51ns, 35ns | 38pC | -77dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA469DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sia469djt1ge3-datasheets-1253.pdf | PowerPAK® SC-70-6 | 850μm | 14 Weeks | EAR99 | C-07431-SINGLE | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.3W | 150°C | 7 ns | 30 ns | -8.8A | 20V | 30V | 15.6W Tc | -30V | P-Channel | 1020pF @ 15V | 26.5m Ω @ 5A, 10V | 3V @ 250μA | 12A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32461EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32462dbt2ge1-datasheets-3105.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32461 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5418DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si5418dut1ge3-datasheets-5479.pdf | PowerPAK® ChipFET™ Single | 3mm | 750μm | 1.9mm | Lead Free | 3 | 14 Weeks | Unknown | 14.5MOhm | 8 | EAR99 | e3 | MATTE TIN | DUAL | NO LEAD | 260 | 8 | 1 | 40 | 3.1W | 1 | Not Qualified | R-PDSO-N3 | 20 ns | 10ns | 10 ns | 20 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 3.1W Ta 31W Tc | 40A | 30V | N-Channel | 1350pF @ 15V | 14.5m Ω @ 7.7A, 10V | 3V @ 250μA | 12A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC403DB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | microBUCK® | 1 (Unlimited) | Non-RoHS Compliant | 2011 | /files/vishaysiliconix-sic401db-datasheets-6199.pdf | 8 Weeks | Yes | 5.5V | 3V~28V | SiC403 | 6A 200mA | Board(s) | DC/DC, Step Down with LDO | Fully Populated | 2, Non-Isolated | Buck | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD23N06-31-T4-GE3 | Vishay Siliconix | $0.87 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud23n0631ge3-datasheets-2119.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252, (D-Pak) | 670pF | 21.4A | 60V | 5.7W Ta 31.25W Tc | N-Channel | 670pF @ 25V | 31mOhm @ 15A, 10V | 3V @ 250μA | 21.4A Tc | 17nC @ 10V | 31 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC478EVB-E | Vishay Siliconix |
Min: 1 Mult: 1 |
download | /files/vishaysiliconix-sic479edt1ge3-datasheets-5940.pdf | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ462DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sij462dpt1ge3-datasheets-7300.pdf | PowerPAK® SO-8 | 4 | 14 Weeks | Unknown | 8 | EAR99 | No | 31.2W | GULL WING | 1 | Single | 1 | R-PSSO-G4 | 10 ns | 10ns | 8 ns | 24 ns | 46.5A | 20V | DRAIN | SWITCHING | 20 mJ | 60V | N-Channel | 1400pF @ 30V | 8m Ω @ 20A, 10V | 2.5V @ 250μA | 46.5A Tc | 32nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC463EVB-B | Vishay Siliconix |
Min: 1 Mult: 1 |
download | /files/vishaysiliconix-sic464edt1ge3-datasheets-4714.pdf | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS04DN-T1-GE3 | Vishay Siliconix | $1.20 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss04dnt1ge3-datasheets-7695.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 30V | 5W Ta 65.7W Tc | N-Channel | 4460pF @ 15V | 1.2mOhm @ 15A, 10V | 2.2V @ 250μA | 50.5A Ta 80A Tc | 93nC @ 10V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V30406-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA80DP-T1-RE3 | Vishay Siliconix | $1.31 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira80dpt1re3-datasheets-8471.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 104W Tc | N-Channel | 9530pF @ 15V | 0.62mOhm @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 188nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1070X-T1-GE3 | Vishay Siliconix | $0.95 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1070xt1e3-datasheets-7798.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 6 | 14 Weeks | 32.006612mg | Unknown | 6 | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | 260 | 6 | 1 | Single | 40 | 1 | FET General Purpose Powers | 10 ns | 22ns | 22 ns | 14 ns | 1.2A | 12V | SILICON | SWITCHING | 236mW Ta | 0.099Ohm | 30V | N-Channel | 385pF @ 15V | 1.55 V | 99m Ω @ 1.2A, 4.5V | 1.55V @ 250μA | 8.3nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR873DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir873dpt1ge3-datasheets-8924.pdf | PowerPAK® SO-8 | 1.12mm | 5 | 14 Weeks | EAR99 | S17-0173_SINGLE | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 1 | 150°C | R-PDSO-F5 | 15 ns | 28 ns | -9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 104W Tc | 37A | 50A | 0.0475Ohm | 80 mJ | -150V | P-Channel | 1805pF @ 75V | 47.5m Ω @ 10A, 10V | 4V @ 250μA | 37A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP21N60LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfp21n60l-datasheets-9473.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 330W | 1 | TO-247-3 | 4nF | 20 ns | 58ns | 10 ns | 33 ns | 21A | 30V | 600V | 5V | 330W Tc | 320mOhm | 600V | N-Channel | 4000pF @ 25V | 5 V | 320mOhm @ 13A, 10V | 5V @ 250μA | 21A Tc | 150nC @ 10V | 320 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7460DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7460dpt1ge3-datasheets-4772.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 9.6mOhm | 8 | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 20 ns | 16ns | 30 ns | 75 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 40A | 60V | N-Channel | 9.6m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf830strlpbf-datasheets-8512.pdf | 500V | 1.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | 500V | 3.1W Ta 74W Tc | 1.5Ohm | 500V | N-Channel | 610pF @ 25V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7862ADP-T1-E3 | Vishay Siliconix | $4.02 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7862adpt1e3-datasheets-0452.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 3mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 42 ns | 38ns | 38 ns | 120 ns | 18A | 8V | SILICON | DRAIN | SWITCHING | 16V | 1.9W Ta | 60A | N-Channel | 7340pF @ 8V | 3m Ω @ 29A, 4.5V | 2V @ 250μA | 18A Ta | 80nC @ 4.5V | 2.5V 4.5V | ±8V |
