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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Screening Level | Input Capacitance | Max Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Breakdown Voltage | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG407BDW-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-SOIC (0.295, 7.50mm Width) | 13 Weeks | NOT SPECIFIED | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 2 | 60Ohm | 12V ±5V~20V | 8:1 | 500pA | 6pF 54pF | 107ns, 88ns | 11pC | 3 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA920DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia920djt1ge3-datasheets-6134.pdf | PowerPAK® SC-70-6 Dual | 6 | 15 Weeks | 28.009329mg | 6 | EAR99 | No | 1.9W | 6 | 2 | Dual | 1.9W | 2 | FET General Purpose Powers | 5 ns | 12ns | 7 ns | 20 ns | 4.5A | 5V | SILICON | DRAIN | SWITCHING | 8V | 8V | METAL-OXIDE SEMICONDUCTOR | 7.8W | 2 N-Channel (Dual) | 470pF @ 4V | 27m Ω @ 5.3A, 4.5V | 700mV @ 250μA | 7.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9431DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg9431edyge3-datasheets-8821.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 1μA | 8 | 540.001716mg | Unknown | 12V | 2.7V | 30Ohm | 8 | yes | 1 | 1μA | e3 | MATTE TIN | 400mW | GULL WING | 260 | 3V | DG9431 | 8 | 1 | 40 | 400mW | 3/5V | Not Qualified | 75 ns | 50 ns | Multiplexer | Dual, Single | 2 | 1 | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | 2.7V~5V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA28BDP-T1-GE3 | Vishay Siliconix | $0.09 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira28bdpt1ge3-datasheets-6955.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 3.8W Ta 17W Tc | N-Channel | 582pF @ 15V | 7.5mOhm @ 10A, 10V | 2.4V @ 250μA | 18A Ta 38A Tc | 14nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG403DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg405dy-datasheets-7457.pdf | 16-DIP (0.300, 7.62mm) | 19.43mm | 4.45mm | 7.87mm | 15V | 1μA | 16 | 1.627801g | 36V | 13V | 45Ohm | 16 | no | No | 2 | e0 | Tin/Lead (Sn/Pb) | 450mW | 16 | SPDT | 450mW | Multiplexer or Switches | 2 | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 45Ohm | BREAK-BEFORE-MAKE | 1:1 | SPST - NO/NC | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 10pC | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA12BDP-T1-GE3 | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira12bdpt1ge3-datasheets-7801.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 5W Ta 38W Tc | N-Channel | 1470pF @ 15V | 4.3mOhm @ 10A, 10V | 2.4V @ 250μA | 27A Ta 60A Tc | 32nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 12 Weeks | 665.986997mg | No SVHC | 36V | 13V | 35Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 1.27mm | 16 | 600mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 35Ohm | 35Ohm | BREAK-BEFORE-MAKE | 250ns | 5V~44V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISC06DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisc06dnt1ge3-datasheets-8337.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 30V | 3.7W Ta 46.3W Tc | N-Channel | 2455pF @ 15V | 2.7mOhm @ 15A, 10V | 2.1V @ 250μA | 27.6A Ta 40A Tc | 58nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG184AP/883L | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg183bp-datasheets-7574.pdf | 16-DIP (0.300, 7.62mm) | 16 Weeks | 30Ohm | 16 | No | 2 | 16-DIP | 30Ohm | 2:1 | DPST - NO | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3437DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3437dvt1e3-datasheets-9963.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 750mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | Other Transistors | 2A | 14 ns | 29ns | 14 ns | 23 ns | 1.1A | 20V | -150V | SILICON | 150V | -4V | 2W Ta 3.2W Tc | 5A | P-Channel | 510pF @ 50V | -4 V | 750m Ω @ 1.4A, 10V | 4V @ 250μA | 1.4A Tc | 19nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 50μA | 16 | 6 Weeks | 665.986997mg | Unknown | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 12/+-15V | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ24PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfz24pbf-datasheets-1307.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 100mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 60W | 1 | FET General Purpose Power | 13 ns | 58ns | 42 ns | 25 ns | 17A | 20V | SILICON | SWITCHING | 4V | 60W Tc | TO-220AB | 68A | 60V | N-Channel | 640pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | 5.08mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg201bdy-datasheets-7652.pdf | 16-CDIP (0.300, 7.62mm) | 19.305mm | 7.62mm | 16 | 14 Weeks | 85Ohm | unknown | 4 | e0 | NO | DUAL | 15V | 16 | 1 | Multiplexer or Switches | 12/+-15V | 4 | Not Qualified | R-CDIP-T16 | -15V | SEPARATE OUTPUT | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | 200ns | 300ns | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9540PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9540pbf-datasheets-2217.pdf | -100V | -19A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 200mOhm | 3 | 1 | Single | 150W | 1 | 175°C | TO-220AB | 1.4nF | 16 ns | 73ns | 57 ns | 34 ns | -19A | 20V | 100V | -4V | 150W Tc | 260 ns | 200mOhm | -100V | P-Channel | 1400pF @ 25V | -4 V | 200mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301AAA/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg300aak883-datasheets-7683.pdf | TO-100-10 Metal Can | 10 | 36V | 13V | 50Ohm | 10 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 15V | 10 | 450mW | Multiplexer or Switches | 1 | 38535Q/M;38534H;883B | 22V | 7V | -15V | 2 | 50Ohm | BREAK-BEFORE-MAKE | 300ns | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS9N60APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 750mOhm | 3 | No | 1 | Single | 170W | 1 | D2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 4V | 170W Tc | 750mOhm | 600V | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG271AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2000 | /files/vishaysiliconix-dg271ak-datasheets-7720.pdf | 2A | 16-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 15V | 7.5mA | 25V | 50Ohm | 16 | 900mW | 4 | 16-CERDIP | 65 ns | 65 ns | 22V | 15V | Dual | 1.4kV | 50Ohm | 1:1 | SPST - NC | ±15V | 1nA | 8pF 8pF | 65ns, 65ns | -5pC | -100dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPG50PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfpg50pbf-datasheets-4430.pdf | 1kV | 6.1A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 2Ohm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.8nF | 19 ns | 35ns | 36 ns | 130 ns | 6.1A | 20V | 1000V | 4V | 190W Tc | 950 ns | 2Ohm | 1kV | N-Channel | 2800pF @ 25V | 4 V | 2Ohm @ 3.6A, 10V | 4V @ 250μA | 6.1A Tc | 190nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG300ABA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -25°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | TO-100-10 Metal Can | 2 | TO-100-10 | 50Ohm | 1:1 | SPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8409DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si8409dbt1e1-datasheets-5250.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | Lead Free | 4 | 33 Weeks | 46MOhm | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | 40 | 1.47W | 1 | Other Transistors | 20 ns | 35ns | 35 ns | 140 ns | -6.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1.47W Ta | -30V | P-Channel | 46m Ω @ 1A, 4.5V | 1.4V @ 250μA | 4.6A Ta | 26nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 547.485991mg | 44V | 4V | 85Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | YES | 640mW | GULL WING | 15V | 1.27mm | 16 | Multiplexer or Switches | +-15V | 4 | Not Qualified | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 85Ohm | 100Ohm | BREAK-BEFORE-MAKE | 300ns | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR418DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir418dpt1ge3-datasheets-6744.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 19 ns | 73ns | 12 ns | 32 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4V | 39W Tc | 23.5A | 70A | 0.005Ohm | 45 mJ | 40V | N-Channel | 2410pF @ 20V | 2.4 V | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 40A Tc | 75nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG302AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg300aak883-datasheets-7683.pdf | 14-CDIP (0.300, 7.62mm) | 36V | 13V | 50Ohm | 14 | No | 2 | 825mW | 2 | 14-CERDIP | 22V | 7V | 4 | 4 | 50Ohm | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4190ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4190adyt1ge3-datasheets-8842.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8.8MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 3W | 1 | 150°C | 12 ns | 34 ns | 13A | 20V | SILICON | SWITCHING | 1.5V | 3W Ta 6W Tc | 100V | N-Channel | 1970pF @ 50V | 1.5 V | 8.8m Ω @ 15A, 10V | 2.8V @ 250μA | 18.4A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ALDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2007 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-DIP (0.300, 7.62mm) | 26.92mm | 3.81mm | 7.11mm | 1μA | 20 | 8 Weeks | 2.508989g | 40V | 5V | 45Ohm | 20 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | NO | 890mW | 2.54mm | 20 | Multiplexer or Switches | 1 | 175 ns | 145 ns | 22V | Dual, Single | 4V | SEPARATE OUTPUT | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD80460E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud80460ege3-datasheets-9664.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 2 | 14 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 65.2W | 1 | 175°C | R-PSSO-G2 | 8 ns | 15 ns | 42A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65.2W Tc | 40A | 0.0447Ohm | 150V | N-Channel | 560pF @ 50V | 44.7m Ω @ 8.3A, 10V | 4V @ 250μA | 42A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 1μA | 16 | 15 Weeks | 36V | 13V | 35Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 900mW | 16 | 900mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 35Ohm | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NO | 5V~44V ±5V~20V | 1:1 | SPST - NO | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4401EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4401eyt1ge3-datasheets-0637.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 12 Weeks | 506.605978mg | Unknown | 8 | Tin | No | 1 | Single | 1.8W | 1 | 8-SO | 4.25nF | 58 ns | 76ns | 44 ns | 67 ns | 17.3A | 20V | 40V | -2V | 7.14W Tc | 11mOhm | -40V | P-Channel | 4250pF @ 20V | -2 V | 14mOhm @ 10.5A, 10V | 2.5V @ 250μA | 17.3A Tc | 115nC @ 10V | 14 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301AAZ/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | 20-LCC | 16 Weeks | 44V | 50Ohm | 20 | No | 1 | 50Ohm | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS61DN-T1-GE3 | Vishay Siliconix | $0.81 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss61dnt1ge3-datasheets-3034.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 20V | 5W Ta 65.8W Tc | P-Channel | 8740pF @ 10V | 3.5mOhm @ 15A, 4.5V | 900mV @ 250μA | 30.9A Ta 111.9A Tc | 231nC @ 10V | 1.8V 4.5V | ±8V |
