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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Voltage - Input | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Main Purpose | Signal Current-Max | Nominal Vgs | Board Type | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI1499DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1499dht1e3-datasheets-4944.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | 1 | Single | 30 | 2.5W | 1 | Other Transistors | 8 ns | 40ns | 60 ns | 46 ns | 1.6A | 5V | SILICON | SWITCHING | 8V | 2.5W Ta 2.78W Tc | 0.078Ohm | -8V | P-Channel | 650pF @ 4V | 78m Ω @ 2A, 4.5V | 800mV @ 250μA | 1.6A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | 700μA | ROHS3 Compliant | 2003 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 500μA | 16 | 665.986997mg | No SVHC | 12V | 2.7V | 17Ohm | 16 | yes | VIDEO APPLICATION | No | 1 | 200μA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 5V | DG408 | 16 | 8 | 40 | 600mW | 1 | 150 ns | 150 ns | 6V | 5V | Multiplexer | 65 ns | Dual, Single | 3V | -5V | 29Ohm | 30Ohm | 70 dB | BREAK-BEFORE-MAKE | 45ns | 60ns | 2.7V~12V ±3V~6V | 0.03A | 8:1 | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4005EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sq4005eyt1ge3-datasheets-6793.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 6W | 1 | 175°C | R-PDSO-G8 | 19 ns | 73 ns | -15A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | 12V | 6W Tc | -12V | P-Channel | 3600pF @ 6V | 22m Ω@ 13.5A, 4.5V | 1V @ 250μA | 15A Tc | 38nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9461DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9461dvt1e3-datasheets-6647.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 60Ohm | 8 | yes | unknown | 1 | e3 | MATTE TIN | 400mW | DUAL | GULL WING | 260 | 3V | DG9461 | 8 | 1 | 40 | 400mW | Not Qualified | 75 ns | 50 ns | Single | 2 | 1 | 60Ohm | 74 dB | 0.4Ohm | 2:1 | 2.7V~5V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS484EN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs484ent1ge3-datasheets-7467.pdf | PowerPAK® 1212-8 | 12 Weeks | PowerPAK® 1212-8 | 40V | 62W Tc | N-Channel | 1855pF @ 25V | 9mOhm @ 16.4A, 10V | 2.5V @ 250μA | 16A Tc | 39nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG458DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 100μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg458dj-datasheets-2781.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 100μA | 16 | 1.627801g | 36V | 13V | 1.5kOhm | 16 | yes | ACTIVE OVERVOLTAGE PROTECTION | No | 1 | e3 | Matte Tin (Sn) | 1W | 15V | 2.54mm | DG458 | 16 | 8 | 1 | 250 ns | 250 ns | 18V | Multiplexer | 500 ns | Dual, Single | 4.5V | -15V | 1.5kOhm | 90 dB | 90Ohm | BREAK-BEFORE-MAKE | 0.02A | 8:1 | ±4.5V~18V | 1nA | 5pF 15pF | 250ns, 250ns | 90 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA416DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia416djt1ge3-datasheets-8270.pdf&product=vishaysiliconix-sia416djt1ge3-6835375 | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 83MOhm | 6 | yes | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 3.5W | 1 | S-PDSO-N3 | 25 ns | 100ns | 15 ns | 11.3A | 20V | SILICON | DRAIN | SWITCHING | 1.6V | 3.5W Ta 19W Tc | 0.45 mJ | 100V | N-Channel | 295pF @ 50V | 83m Ω @ 3.2A, 10V | 3V @ 250μA | 11.3A Tc | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9414DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg9415dqt1e3-datasheets-4037.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 850μm | 3mm | 5V | 1μA | 10 | 10 Weeks | 143.193441mg | 12V | 2.7V | 17Ohm | 10 | yes | Tin | No | 1 | 1μA | e3 | DUAL | GULL WING | 260 | 3V | 0.5mm | DG9414 | 10 | 4 | 40 | 1 | 125 ns | 68 ns | Multiplexer | 128 ns | Single | 20mA | 4 | 17Ohm | 17Ohm | 58 dB | 3Ohm | 75ns | 0.02A | 4:1 | 2.7V~12V | SP4T | 1nA | 10pF 24pF | 55ns, 40ns | 13pC | 1 Ω | -64dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR836DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sir836dpt1ge3-datasheets-9286.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 22.5MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 14 ns | 19ns | 11 ns | 17 ns | 21A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.9W Ta 15.6W Tc | 50A | 5 mJ | 40V | N-Channel | 600pF @ 20V | 1.2 V | 19m Ω @ 10A, 10V | 2.5V @ 250μA | 21A Tc | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG611AEN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg612aent1e4-datasheets-7227.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | Lead Free | 100μA | 16 | 14 Weeks | 12V | 2.7V | 72Ohm | 16 | yes | ALSO OPERATE WITH 5V AND 3V SUPPLY | No | 4 | 525mW | QUAD | 3V | DG611 | 16 | 1 | 525mW | Multiplexer or Switches | 720MHz | SPST | 55 ns | 35 ns | 5V | Dual, Single | 2.7V | -3V | 4 | SEPARATE OUTPUT | 115Ohm | 62 dB | 0.7Ohm | BREAK-BEFORE-MAKE | 50ns | 90ns | NC | 2.7V~12V ±2.7V~5V | 1:1 | SPST - NC | 100pA | 2pF 3pF | 55ns, 35ns | 1pC | 700m Ω | -90dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA96EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja96ept1ge3-datasheets-0202.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 48W | 1 | 175°C | R-PSSO-G4 | 13 ns | 21 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W Tc | 80A | 24 mJ | 80V | N-Channel | 1200pF @ 25V | 21.5m Ω @ 10A, 10V | 3.5V @ 250μA | 30A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG485DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg485az883-datasheets-2762.pdf | 16-DIP (0.300, 7.62mm) | 3μA | 6 Weeks | 25V | 85Ohm | 16 | 1nA | 470mW | 8 | 16-PDIP | 200 ns | 200 ns | 85Ohm | 1:1 | SPST - NO/NC | ±15V | 1nA | 7pF 43pF | 200ns, 200ns | 17pC | 5.1Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2302CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2302cdst1e3-datasheets-4810.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 57mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 710mW | 1 | FET General Purpose Powers | 150°C | 8 ns | 7ns | 7 ns | 30 ns | 2.9A | 8V | SILICON | SWITCHING | 850mV | 710mW Ta | 2.6A | 20V | N-Channel | 57m Ω @ 3.6A, 4.5V | 850mV @ 250μA | 2.6A Ta | 5.5nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32462EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32462dbt2ge1-datasheets-3105.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32462 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS468DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis468dnt1ge3-datasheets-5885.pdf | PowerPAK® 1212-8 | 3.4mm | 1.12mm | 3.4mm | Lead Free | 5 | 14 Weeks | Unknown | 19.5MOhm | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.7W | 1 | FET General Purpose Powers | 150°C | S-PDSO-C5 | 8 ns | 15 ns | 9.8A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 3.7W Ta 52W Tc | 30A | 60A | 5 mJ | 80V | N-Channel | 780pF @ 40V | 19.5m Ω @ 10A, 10V | 3V @ 250μA | 30A Tc | 28nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC463EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sic464edt1ge3-datasheets-4714.pdf | 15 Weeks | 4.5V~60V | SIC463 | 4A | Board(s) | DC/DC, Step Down | Fully Populated | 1, Non-Isolated | Buck | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR214TRLPBF | Vishay Siliconix | $0.81 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu214pbf-datasheets-4957.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 2.2A | 20V | 250V | 2.5W Ta 25W Tc | 2Ohm | N-Channel | 140pF @ 25V | 2Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC467EVB-D | Vishay Siliconix |
Min: 1 Mult: 1 |
download | /files/vishaysiliconix-sic469edt1ge3-datasheets-4516.pdf | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ848EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sqj848ept1ge3-datasheets-7427.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | 8 | yes | EAR99 | No | GULL WING | 260 | 8 | Single | 40 | 68W | 1 | FET General Purpose Power | R-PSSO-G4 | 18 ns | 10ns | 17 ns | 38 ns | 30A | 20V | SILICON | DRAIN | 68W Tc | 47A | 0.009Ohm | 40V | N-Channel | 2500pF @ 20V | 2 V | 7.5m Ω @ 10.3A, 10V | 2.5V @ 250μA | 47A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V30368-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7423DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7423dnt1e3-datasheets-7837.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 18mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | R-XDSO-C5 | 11 ns | 10ns | 10 ns | 74 ns | -11.7A | 20V | SILICON | DRAIN | SWITCHING | 30V | -1V | 1.5W Ta | 7.4A | 30A | -30V | P-Channel | -1 V | 18m Ω @ 11.7A, 10V | 3V @ 250μA | 7.4A Ta | 56nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB30N60E-GE3 | Vishay Siliconix | $4.69 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb30n60ee3-datasheets-9414.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 18 Weeks | 1.437803g | Unknown | 125mOhm | 3 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 1 | Single | 30 | 250W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | SILICON | SWITCHING | 2V | 250W Tc | 65A | 690 mJ | 600V | N-Channel | 2600pF @ 100V | 125m Ω @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7108DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7108dnt1ge3-datasheets-8585.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 60 ns | 22A | 16V | SILICON | DRAIN | SWITCHING | 2V | 1.5W Ta | 60A | 0.0049Ohm | 24 mJ | 20V | N-Channel | 4.9m Ω @ 22A, 10V | 2V @ 250μA | 14A Ta | 30nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA430DJ-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia430djt4ge3-datasheets-5346.pdf | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 Single | 20V | 3.5W Ta 19.2W Tc | N-Channel | 800pF @ 10V | 13.5mOhm @ 7A, 10V | 3V @ 250μA | 12A Ta 12A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ488EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj488ept1ge3-datasheets-8574.pdf | 8-PowerTDFN | 4.9mm | 1.07mm | 4.37mm | Lead Free | 4 | 12 Weeks | EAR99 | unknown | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G4 | 4 ns | 11ns | 4.6 ns | 20 ns | 32A | 2V | SILICON | DRAIN | 100V | 83W Tc | 42A | N-Channel | 979pF @ 25V | 21m Ω @ 7.4A, 10V | 2.5V @ 250μA | 42A Tc | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI614GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfi614g-datasheets-8520.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Contains Lead | 8 Weeks | 6.000006g | No SVHC | 2kOhm | 3 | No | 1 | Single | TO-220-3 | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 2.1A | 20V | 250V | 250V | 4V | 23W Tc | 2Ohm | N-Channel | 140pF @ 25V | 4 V | 2Ohm @ 1.3A, 10V | 4V @ 250μA | 2.1A Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7790DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7790dpt1ge3-datasheets-9703.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 15 Weeks | 506.605978mg | Unknown | 4.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 5.2W | 1 | FET General Purpose Powers | R-XDSO-C5 | 42 ns | 34ns | 28 ns | 45 ns | 50A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.5V | 5.2W Ta 69W Tc | 70A | N-Channel | 4200pF @ 20V | 4.5m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 95nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA6N65E-E3 | Vishay Siliconix | $7.56 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha6n65ee3-datasheets-3221.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 650V | 31W Tc | N-Channel | 1640pF @ 100V | 600mOhm @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH120N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh120n60et1ge3-datasheets-1103.pdf | 8-PowerTDFN | 18 Weeks | PowerPAK® 8 x 8 | 600V | 156W Tc | N-Channel | 1600pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 24A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG17N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sihg17n80ege3-datasheets-3823.pdf | TO-247-3 | 24.99mm | 14 Weeks | 1 | 208W | 150°C | 22 ns | 71 ns | 15A | 30V | 208W Tc | 800V | N-Channel | 2408pF @ 100V | 290m Ω @ 8.5A, 10V | 4V @ 250μA | 15A Tc | 122nC @ 10V | 10V | ±30V |
