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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG444BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | /files/vishaysiliconix-dg444bdj-datasheets-7580.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 36V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | YES | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | 4 | Not Qualified | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb35n60efge3-datasheets-9754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 21 Weeks | D2PAK (TO-263) | 600V | 250W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 20Ohm | 8 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | GULL WING | 8 | 400mW | Multiplexer or Switches | 41 ns | 32 ns | 6V | Dual, Single | 3V | 1 | 20Ohm | 20Ohm | BREAK-BEFORE-MAKE | 75ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP050N60E-GE3 | Vishay Siliconix | $6.66 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp050n60ege3-datasheets-0118.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 278W Tc | N-Channel | 3459pF @ 100V | 50mOhm @ 23A, 10V | 5V @ 250μA | 51A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9408DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg9409dnt1e4-datasheets-6670.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | Lead Free | 1μA | 16 | 57.09594mg | Unknown | 12V | 2.7V | 7Ohm | 16 | yes | No | 1 | 1μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | 1.88W | QUAD | 260 | 5V | 0.65mm | DG9408 | 16 | 8 | 40 | 1.88W | 1 | 162 ns | 97 ns | 6V | 5V | Multiplexer | 71 ns | Dual, Single | 3V | -5V | 100mA | 7Ohm | 3.9Ohm | 81 dB | 3.6Ohm | BREAK-BEFORE-MAKE | 94ns | 2.7V~12V ±3V~6V | 8:1 | 2nA | 21pF 211pF | 70ns, 44ns | 29pC | 3.6 Ω (Max) | -85dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP12N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihf12n50ce3-datasheets-6578.pdf | TO-220-3 | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 555mOhm | 3 | yes | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 208W | 1 | FET General Purpose Power | 18 ns | 35ns | 6 ns | 23 ns | 12A | 500V | SILICON | DRAIN | SWITCHING | 3V | 208W Tc | TO-220AB | 28A | N-Channel | 1375pF @ 25V | 555m Ω @ 4A, 10V | 5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9073102EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-9073102ea-datasheets-0541.pdf | CDIP | 36V | 13V | 16 | No | 900mW | 22V | 7V | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG47N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n60efge3-datasheets-2218.pdf | TO-247-3 | Lead Free | 3 | 22 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 1 | 30 ns | 56ns | 56 ns | 91 ns | 47A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 4V | 379W Tc | TO-247AC | 0.065Ohm | N-Channel | 4854pF @ 100V | 67m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7801401XA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | 1 (Unlimited) | 125°C | -55°C | BIPOLAR | Non-RoHS Compliant | 14 | 14 | 2 | DUAL | FLAT | 14 | MILITARY | 2 | DPST | Multiplexer or Switches | Not Qualified | 18V | 30mA | 4 | MAKE-BEFORE-BREAK | 600ns | NO | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIUD401ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siud401edt1ge3-datasheets-2675.pdf | PowerPAK® 0806 | 14 Weeks | PowerPAK® 0806 | 30V | 1.25W Ta | P-Channel | 33pF @ 15V | 1.573Ohm @ 200mA, 10V | 1.4V @ 250μA | 500mA Ta | 2nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM188BXC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL9N60APBF | Vishay Siliconix | $1.34 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfsl9n60apbf-datasheets-3597.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 8 Weeks | 2.387001g | Unknown | 750mOhm | 3 | No | 1 | Single | 170W | 1 | I2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 4V | 170W Tc | 750mOhm | 600V | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2735DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2735dnt1e4-datasheets-4508.pdf | 8-UFQFN | 1.8mm | 550μm | 1.4mm | 1μA | 10 | 14 Weeks | 7.002332mg | 4.3V | 1.65V | 500mOhm | 8 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 208mW | QUAD | NO LEAD | 260 | 3V | DG2735 | 10 | 1 | 40 | 208mW | Multiplexer or Switches | 3V | Not Qualified | R-XQCC-N10 | 50MHz | 78 ns | 58 ns | Single | 4 | 2 | 500mOhm | 70 dB | 0.06Ohm | BREAK-BEFORE-MAKE | 60ns | 2:1 | 1.65V~4.3V | SPDT | 2nA | 55pF | 78ns, 58ns | 60m Ω | -70dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb22n60ee3-datasheets-1845.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 14 Weeks | 1.437803g | Unknown | 180mOhm | 3 | Tin | No | 1 | Single | 227W | 1 | D2PAK | 1.92nF | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | 600V | 2V | 227W Tc | 180mOhm | 600V | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 180 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3157BDN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg3157bdnt1e4-datasheets-4600.pdf | 6-UFDFN | 1μA | 14 Weeks | 5.5V | 1.65V | 15Ohm | 6 | No | 160mW | DG3157 | 1 | 6-miniQFN | 300MHz | SPDT | 25 ns | 21 ns | Single | 15Ohm | 2:1 | 1.65V~5.5V | SPDT | 1μA | 7pF | 25ns, 21ns | 7pC | 800mOhm | -64dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS38N60LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfps38n60lpbf-datasheets-4956.pdf | TO-274AA | 15.6mm | 20.3mm | 5mm | Lead Free | 8 Weeks | Unknown | 150MOhm | 3 | No | 1 | Single | 540W | 1 | SUPER-247™ (TO-274AA) | 7.99nF | 44 ns | 130ns | 69 ns | 92 ns | 38A | 30V | 600V | 5V | 540W Tc | 120mOhm | 600V | N-Channel | 7990pF @ 25V | 150mOhm @ 23A, 10V | 5V @ 250μA | 38A Tc | 320nC @ 10V | 150 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9421DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | -1μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg9422dvt1e3-datasheets-4676.pdf | 100mA | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 5V | Lead Free | 1μA | 6 | 14 Weeks | 19.986414mg | No SVHC | 12V | 2.7V | 3Ohm | 6 | yes | No | 1 | e3 | Matte Tin (Sn) | 570mW | GULL WING | 260 | 5V | 0.95mm | DG9421 | 6 | 1 | 40 | 570mW | Multiplexer or Switches | SPST | 45 ns | 47 ns | 6V | Dual, Single | 2.7V | -5V | 1 | 3Ohm | 3Ohm | 57 dB | BREAK-BEFORE-MAKE | 97ns | NC | 2.7V~12V ±2.7V~6V | 1:1 | SPST - NC | 1nA | 31pF 30pF | 45ns, 47ns | 43pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU420APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfr420apbf-datasheets-7258.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | 3 | 12 Weeks | 329.988449mg | Unknown | 3 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 83W | 1 | 8.1 ns | 12ns | 13 ns | 16 ns | 3.3A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 4.5V | 83W Tc | 3Ohm | N-Channel | 340pF @ 25V | 4.5 V | 3 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3.3A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2034DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2034dnt1e4-datasheets-5325.pdf | 12-VFQFN Exposed Pad | 3mm | 900μm | 3mm | 5V | 1μA | 12 | 21.99923mg | 5.5V | 1.8V | 5.5Ohm | 12 | yes | No | 1 | e3 | Matte Tin (Sn) | 1.295W | QUAD | 260 | 3V | 0.5mm | DG2034 | 12 | 4 | 40 | 1.295W | 1 | 35 ns | 25 ns | Multiplexer | 45 ns | Single | 4 | 5.5Ohm | 73 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 0.05A | 4:1 | 1.8V~5.5V | SP4T | 1nA | 13pF 43pF | 30ns, 20ns | -4.4pC | 160m Ω | -77dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG25N40D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg25n40de3-datasheets-8122.pdf | TO-247-3 | 3 | 13 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 21 ns | 57ns | 37 ns | 40 ns | 25A | 30V | SILICON | DRAIN | SWITCHING | 400V | 400V | 278W Tc | TO-247AC | 78A | 556 mJ | N-Channel | 1707pF @ 100V | 170m Ω @ 13A, 10V | 5V @ 250μA | 25A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2513DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2511dnt1e4-datasheets-5355.pdf | 6-UFDFN | 1.2mm | 550μm | 1mm | 1μA | 6 | 57.09594mg | 5.5V | 1.8V | 1.3Ohm | 6 | yes | unknown | 1 | e4 | NICKEL PALLADIUM GOLD | 160mW | DUAL | NO LEAD | 260 | 3V | 0.4mm | DG251* | 6 | 1 | 40 | 160mW | Multiplexer or Switches | 3/5V | Not Qualified | SPST | 35 ns | 31 ns | Single | 1 | 1.3Ohm | 58 dB | 0.15Ohm | BREAK-BEFORE-MAKE | 34ns | 49ns | NO | 1:1 | 1.8V~5.5V | SPST - NO | 2nA | 19pF | 35ns, 31ns | 14pC | 150m Ω (Max) | -64dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3481EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq3481evt1ge3-datasheets-9078.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 4W | 1 | 6-TSOP | 9 ns | 15ns | 12 ns | 28 ns | 7.5A | 20V | 30V | 4W Tc | P-Channel | 870pF @ 15V | 43mOhm @ 5.3A, 10V | 2.5V @ 250μA | 7.5A Tc | 23.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2618DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 100nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2616dnt1e4-datasheets-5372.pdf | 10-VFDFN Exposed Pad | 3mm | 880μm | 3mm | 3V | 300μA | 10 | 50.008559mg | 3.6V | 1.5V | 7Ohm | 10 | yes | Gold | unknown | 2 | e4 | Non-Inverting | 1.191W | DUAL | NO LEAD | 260 | 3V | 0.5mm | DG2618 | 10 | 1 | 40 | 1.191W | Multiplexer or Switches | 3V | Not Qualified | 69 ns | 39 ns | Single | 4 | 150mA | 2 | 7Ohm | 32 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 76ns | 2:1 | 1.5V~3.6V | SPDT | 2nA | 9pF | 69ns, 39ns | 7pC | 100m Ω | -80dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1031R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1031rt1ge3-datasheets-1079.pdf | SC-75A | 1.58mm | 700μm | 760μm | Lead Free | 3 | 14 Weeks | No SVHC | 8Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 250mW | 1 | Other Transistors | 55 ns | 30ns | 30 ns | 60 ns | 140mA | 6V | SILICON | SWITCHING | 20V | 20V | 900mV | 250mW Ta | P-Channel | 8 Ω @ 150mA, 4.5V | 1.2V @ 250μA | 140mA Ta | 1.5nC @ 4.5V | 1.5V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2612DX-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg2613dxt1e3-datasheets-5384.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 1μA | 6 | 32.006612mg | 5.5V | 1.8V | 1.4Ohm | yes | unknown | 1 | e3 | MATTE TIN | 172mW | DUAL | FLAT | 260 | 3V | 0.5mm | DG2612 | 6 | 1 | 40 | Multiplexer or Switches | 3V | 1 | Not Qualified | R-PDSO-F6 | 60 ns | 35 ns | Single | SEPARATE OUTPUT | 1.4Ohm | 67 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 37ns | 63ns | NC | 2:1 | 1.8V~5.5V | SPDT | 2nA | 36pF | 60ns, 35ns | 2.4pC | 100m Ω (Max) | -73dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2308BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/vishaysiliconix-si2308bdst1ge3-datasheets-6743.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 156MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.09W | 1 | FET General Purpose Powers | 150°C | 4 ns | 16ns | 16 ns | 10 ns | 1.9A | 20V | SILICON | SWITCHING | 1V | 1.09W Ta 1.66W Tc | 60V | N-Channel | 190pF @ 30V | 156m Ω @ 1.9A, 10V | 3V @ 250μA | 2.3A Tc | 6.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2617DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2616dnt1e4-datasheets-5372.pdf | 10-VFDFN Exposed Pad | 3mm | 880μm | 3mm | 300μA | 10 | 50.008559mg | 3.6V | 1.5V | 7Ohm | 10 | yes | 2 | e4 | NICKEL PALLADIUM GOLD | 1.191W | DUAL | NO LEAD | 260 | 3V | 0.5mm | DG2617 | 10 | 1 | 40 | 1.191W | Multiplexer or Switches | 3V | Not Qualified | 69 ns | 39 ns | Single | 4 | 2 | 7Ohm | 32 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 76ns | 2:1 | 1.5V~3.6V | SPDT | 2nA | 9pF | 69ns, 39ns | 7pC | 100m Ω | -80dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA18DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira18dpt1ge3-datasheets-3935.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | Tin | No | DUAL | FLAT | 240 | 40 | 3.3W | 1 | FET General Purpose Powers | R-PDSO-F5 | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.2V | 3.3W Ta 14.7W Tc | 70A | 0.0075Ohm | N-Channel | 1000pF @ 15V | 7.5m Ω @ 10A, 10V | 2.4V @ 250μA | 33A Tc | 21.5nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 700μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 500μA | 16 | 547.485991mg | 12V | 2.7V | 17Ohm | 16 | yes | EAR99 | VIDEO APPLICATION | Tin | No | 1 | e3 | 600mW | GULL WING | 260 | 5V | DG408 | 16 | 8 | 40 | 600mW | 1 | 150 ns | 150 ns | 6V | 5V | Multiplexer | Dual, Single | 3V | -5V | 30mA | 29Ohm | 70 dB | BREAK-BEFORE-MAKE | 45ns | 60ns | 2.7V~12V ±3V~6V | 0.03A | 8:1 | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2325ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2325est1ge3-datasheets-5161.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 3 | 3W | 1 | TO-236 (SOT-23) | 1A | 20V | 150V | 3W Tc | P-Channel | 250pF @ 50V | 1.77Ohm @ 500mA, 10V | 3.5V @ 250μA | 840mA Tc | 10nC @ 10V | 10V | ±20V |
