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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | Switching | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG442DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 1999 | /files/vishaysiliconix-dg442dyt1-datasheets-7418.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 100μA | 16 | 6 Weeks | 665.986997mg | 36V | 13V | 85Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 900mW | GULL WING | 15V | 1.27mm | 16 | 4 | 900mW | Multiplexer or Switches | Not Qualified | SPST | 250 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | 4 Ω (Max) | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4064EY-T1_GE3 | Vishay Siliconix | $1.39 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4064eyt1ge3-datasheets-8440.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.8W | 1 | 175°C | R-PDSO-G8 | 16 ns | 33 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 6.8W Tc | 73 pF | 60V | N-Channel | 2096pF @ 25V | 19.8m Ω @ 6.1A, 10V | 2.5V @ 250μA | 12A Tc | 43nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG186AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg186ap883-datasheets-7590.pdf | 14-DIP (0.300, 7.62mm) | 14 | 10Ohm | 14 | no | Yes | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 14 | 825mW | Multiplexer or Switches | 1 | Not Qualified | 38535Q/M;38534H;883B | 18V | 10V | 2 | 10Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±15V | 10nA | 21pF 17pF | 400ns, 200ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2333DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2333dst1e3-datasheets-8489.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | Other Transistors | 25 ns | 60 ns | 72 ns | -4.1A | 8V | SILICON | SWITCHING | 12V | -1V | 750mW Ta | P-Channel | 1100pF @ 6V | -1 V | 32m Ω @ 5.3A, 4.5V | 1V @ 250μA | 4.1A Ta | 18nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG213DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg213dy-datasheets-7631.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 547.485991mg | 40V | 3V | 60Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 512/+-15V | 130 ns | 100 ns | 22V | Dual, Single | 3V | 4 | SEPARATE OUTPUT | 60Ohm | 60Ohm | BREAK-BEFORE-MAKE | 200ns | 3V~40V ±3V~22V | 1:1 | SPST - NO/NC | 500pA | 5pF 5pF | 130ns, 100ns | 1pC | 1 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7129DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7129dnt1ge3-datasheets-1220.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 11.4mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.8W | 1 | Other Transistors | S-XDSO-C5 | 50 ns | 43ns | 14 ns | 36 ns | 14.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 52.1W Tc | 35A | 60A | P-Channel | 3345pF @ 15V | 11.4m Ω @ 14.4A, 10V | 2.8V @ 250μA | 35A Tc | 71nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG184BP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -25°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -25°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg183bp-datasheets-7574.pdf | 16-DIP (0.300, 7.62mm) | 50Ohm | 16 | Yes | 2 | 900mW | 2 | 16-DIP | 18V | 10V | 4 | 4 | 50Ohm | 2:1 | DPST - NO | ±15V | 5nA | 9pF 6pF | 180ns, 150ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbe30pbf-datasheets-2300.pdf | 800V | 4.1A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | Tin | No | 48A | 800V | 1 | Single | 125W | 1 | TO-220AB | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 4V | 125W Tc | 720 ns | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 4 V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301ABK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | 14-CDIP (0.300, 7.62mm) | 14 Weeks | 1 | 14-CERDIP | 50Ohm | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP70101EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sup70101elge3-datasheets-3670.pdf | TO-220-3 | 19.31mm | 14 Weeks | EAR99 | e3 | Tin (Sn) | 260 | 1 | 30 | 375W | 175°C | 20 ns | 110 ns | -120A | 20V | 100V | 375W Tc | 8.1mOhm | -100V | P-Channel | 7000pF @ 50V | 2.5V @ 250μA | 120A Tc | 190nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG303BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-SOIC (0.154, 3.90mm Width) | 8.75mm | 1.55mm | 4mm | 15V | 1mA | 14 | 8 Weeks | 1.620005g | 36V | 13V | 50Ohm | 14 | no | No | 4 | 600mW | GULL WING | 15V | 14 | SPST | 600mW | Multiplexer or Switches | 2 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | 50Ohm | 50Ohm | BREAK-BEFORE-MAKE | 2:1 | DPST - NO/NC | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/vishaysiliconix-irfp460bpbf-datasheets-4496.pdf | TO-247-3 | 3 | 8 Weeks | 38.000013g | No SVHC | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 278W | 1 | 24 ns | 31ns | 56 ns | 117 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 4V | 278W Tc | TO-247AC | 62A | 0.25Ohm | 500V | N-Channel | 3094pF @ 100V | 250m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg300aak883-datasheets-7683.pdf | 14-CDIP (0.300, 7.62mm) | 14 | 36V | 13V | 50Ohm | 14 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 15V | 14 | 825mW | Multiplexer or Switches | 1 | 38535Q/M;38534H;883B | 22V | 7V | -15V | 2 | 50Ohm | BREAK-BEFORE-MAKE | 300ns | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB20N50KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfb20n50kpbf-datasheets-5495.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 210mOhm | 3 | No | 1 | Single | 280W | 1 | TO-220AB | 2.87nF | 22 ns | 74ns | 33 ns | 45 ns | 20A | 30V | 500V | 5V | 280W Tc | 250mOhm | 500V | N-Channel | 2870pF @ 25V | 250mOhm @ 12A, 10V | 5V @ 250μA | 20A Tc | 110nC @ 10V | 250 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishay-dg308bak883-datasheets-8509.pdf | 16-CDIP (0.300, 7.62mm) | 16 | 18 Weeks | 44V | 4V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 15V | 16 | Multiplexer or Switches | +-15V | 4 | 22V | 4V | -15V | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | 300ns | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7172ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7172adpt1re3-datasheets-5978.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 200V | N-Channel | 1110pF @ 100V | 50mOhm @ 10A, 10V | 3.1V @ 250μA | 19.5nC @ 10V | 7.5V 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG387AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg384aak883-datasheets-7766.pdf | 14-CDIP (0.300, 7.62mm) | 14 | 36V | 13V | 50Ohm | 14 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 15V | 14 | SPDT | Multiplexer or Switches | +-15V | 2 | 38535Q/M;38534H;883B | 22V | 7V | -15V | 50Ohm | BREAK-BEFORE-MAKE | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 10pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD014PBF | Vishay Siliconix | $1.17 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd014pbf-datasheets-8969.pdf | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 200mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 310pF | 10 ns | 50ns | 50 ns | 13 ns | 1.7A | 20V | 60V | 4V | 1.3W Ta | 140 ns | 200mOhm | 60V | N-Channel | 310pF @ 25V | 200mOhm @ 1A, 10V | 4V @ 250μA | 1.7A Ta | 11nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309AK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 16-DIP (0.300, 7.62mm) | 16 | 36V | 13V | 100Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | DUAL | 15V | 16 | 900mW | Multiplexer or Switches | +-15V | 22V | 7V | -15V | 4 | SEPARATE OUTPUT | 100Ohm | BREAK-BEFORE-MAKE | 200ns | NC | 1:1 | SPST - NC | ±15V | 1nA | 11pF 8pF | 200ns, 150ns | -10pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ14PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfz14pbf-datasheets-9763.pdf | 60V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 200mOhm | 3 | yes | EAR99 | No | 3 | 1 | Single | 36W | 1 | 10 ns | 50ns | 19 ns | 13 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 2V | 43W Tc | TO-220AB | 140 ns | 40A | 47 mJ | 60V | N-Channel | 300pF @ 25V | 4 V | 200m Ω @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | 16-DIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 500μA | 16 | 36V | 5V | 100Ohm | 16 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | NO | 900mW | 16 | 4 | DIFFERENTIAL MULTIPLEXER | Multiplexer or Switches | 2 | 150 ns | 150 ns | 20V | 15V | Dual, Single | 5V | 100Ohm | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 4:1 | SP4T | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu120pbf-datasheets-9324.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 270mOhm | 3 | No | 77A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 360pF | 6.8 ns | 27ns | 17 ns | 18 ns | 7.7A | 20V | 100V | 100V | 4V | 2.5W Ta 42W Tc | 270mOhm | N-Channel | 360pF @ 25V | 4 V | 270mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412HSAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 16-CDIP (0.300, 7.62mm) | 14 Weeks | 4 | 16-CERDIP | 35Ohm | 12V ±5V~20V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS67DN-T1-GE3 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss67dnt1ge3-datasheets-3158.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 30V | 65.8W Tc | P-Channel | 4380pF @ 15V | 5.5mOhm @ 15A, 10V | 2.5V @ 250μA | 60A Tc | 111nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Contains Lead | 1μA | 16 | 665.986997mg | 36V | 13V | 35Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 68 dB | BREAK-BEFORE-MAKE | 220ns | 5V~44V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR210TRRPBF | Vishay Siliconix | $0.85 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 200V | 200V | 2.5W Ta 25W Tc | TO-252AA | N-Channel | 140pF @ 25V | 1.5 Ω @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417BAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2016 | 8-CDIP (0.300, 7.62mm) | 7.62mm | 8 | 15 Weeks | 36V | 13V | 35Ohm | 8 | 1 | DUAL | 15V | 2.54mm | 8 | 1 | 600mW | Multiplexer or Switches | Not Qualified | 20V | 7V | -15V | 1 | SEPARATE OUTPUT | 35Ohm | 82 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 62ns, 53ns | 38pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR622DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir622dpt1ge3-datasheets-8525.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 150V | 6.25W Ta 104W Tc | N-Channel | 1516pF @ 75V | 17.7mOhm @ 20A, 10V | 4.5V @ 250μA | 12.6A Ta 51.6A Tc | 41nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2524DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg2523dnt1ge4-datasheets-8508.pdf | 19 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9010PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9010pbf-datasheets-4325.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 25W | 1 | Other Transistors | R-PSSO-G2 | 6.1 ns | 47ns | 35 ns | 13 ns | 5.3A | 20V | SILICON | DRAIN | SWITCHING | 50V | 25W Tc | 0.5Ohm | -50V | P-Channel | 240pF @ 25V | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 5.3A Tc | 9.1nC @ 10V | 10V | ±20V |
