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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Turn On Delay Time | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Application | DS Breakdown Voltage-Min | Threshold Voltage | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| W1748LC220 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | W4 | Standard Recovery >500ns, > 200mA (Io) | Standard | 2200V | 30mA @ 2200V | 1.93V @ 3770A | 1748A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS10-018AS | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2004 | /files/ixys-dgsk20018a-datasheets-6339.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.59999g | EAR99 | HIGH SWITCHING SPEED | 8541.10.00.80 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 15A | 1.1V | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | GALLIUM ARSENIDE | 20A | 1.3mA | 180V | Schottky | 180V | 15A | 1 | 0.013μs | 1.3mA @ 180V | 1.1V @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSAI35-16A | IXYS |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dsi3512a-datasheets-3486.pdf | DO-203AB, DO-5, Stud | Lead Free | 1 | 6 Weeks | No SVHC | 2 | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | 1.55V | 650A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4mA | 1.6kV | 690A | 1.6kV | Avalanche | 1.6kV | 49A | 1 | 1600V | 4mA @ 1600V | 1.55V @ 150A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS1-60BA | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-dss160ba-datasheets-1764.pdf | DO-214AC, SMA | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW NOISE, HIGH RELIABILITY | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 580mV | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 42A | Schottky | 60V | 1A | 1A | 100μA @ 60V | 500mV @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS2-100AB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-dss2100ab-datasheets-1924.pdf | DO-214AA, SMB | 2 | 2 | yes | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 820mV | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | Schottky | 100V | 2A | 1 | 2A | 500μA @ 100V | 740mV @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS20-018AS-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/ixys-dgsk40018a-datasheets-7890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 180V | 2mA @ 180V | 1V @ 7.5A | 23A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH48P20P | IXYS | $1.13 |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth48p20p-datasheets-1938.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 462W Tc | TO-247AD | 144A | 0.085Ohm | 2500 mJ | P-Channel | 5400pF @ 25V | 85m Ω @ 500mA, 10V | 4.5V @ 250μA | 48A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKN75N60C | IXYS | $21.98 |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkn75n60c-datasheets-2217.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 36MOhm | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 3 | 560W | 1 | FET General Purpose Power | 30ns | 10 ns | 110 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 560W Tc | 250A | 600V | N-Channel | 36m Ω @ 50A, 10V | 3.9V @ 5mA | 75A Tc | 500nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFY36N20X3 | IXYS | $3.09 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy36n20x3-datasheets-3750.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 19 Weeks | AVALANCHE RATED | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 176W Tc | TO-252AA | 36A | 50A | 0.045Ohm | 300 mJ | N-Channel | 1425pF @ 25V | 45m Ω @ 18A, 10V | 4.5V @ 500μA | 36A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP160N10T | IXYS | $4.46 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp160n10t-datasheets-3929.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3 | Single | 430W | 1 | FET General Purpose Powers | R-PSFM-T3 | 61ns | 42 ns | 49 ns | 160A | SILICON | DRAIN | SWITCHING | 430W Tc | TO-220AB | 430A | 0.007Ohm | 500 mJ | 100V | N-Channel | 6600pF @ 25V | 7m Ω @ 25A, 10V | 4.5V @ 250μA | 160A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL38N100Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfl38n100q2-datasheets-4910.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.21mm | Lead Free | 3 | 8 Weeks | 264 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 380W | 1 | FET General Purpose Power | R-PSIP-T3 | 25 ns | 28ns | 15 ns | 57 ns | 29A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 380W Tc | 0.28Ohm | 5000 mJ | 1kV | N-Channel | 13500pF @ 25V | 280m Ω @ 19A, 10V | 5.5V @ 8mA | 29A Tc | 250nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK120N30P3 | IXYS | $15.07 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk120n30p3-datasheets-1840.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 30 Weeks | 3 | Single | 26 ns | 60 ns | 120A | 20V | 300V | 1130W Tc | N-Channel | 8630pF @ 25V | 27m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT220N20X3HV | IXYS | $17.14 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft220n20x3hv-datasheets-2115.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 200V | 960W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 220A Tc | 204nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH340N075T2 | IXYS | $8.86 |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfh340n075t2-datasheets-2443.pdf | TO-247-3 | Lead Free | 30 Weeks | 935W | 1 | TO-247AD (IXFH) | 19nF | 340A | 20V | 75V | 935W Tc | N-Channel | 19000pF @ 25V | 3.2mOhm @ 100A, 10V | 4V @ 3mA | 340A Tc | 300nC @ 10V | 3.2 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA3N120 | IXYS | $17.02 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfa3n120-datasheets-5453.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 200W | 1 | R-PSSO-G2 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 200W Tc | 3A | 700 mJ | 1.2kV | N-Channel | 1050pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 1.5mA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT170N10P | IXYS | $17.20 |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtt170n10p-datasheets-5567.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 714W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50ns | 33 ns | 90 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 715W Tc | 350A | 0.009Ohm | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 9m Ω @ 500mA, 10V | 5V @ 250μA | 170A Tc | 198nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH32N100X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft32n100xhv-datasheets-5642.pdf | TO-247-3 | 19 Weeks | 1000V | 890W Tc | N-Channel | 4075pF @ 25V | 220m Ω @ 16A, 10V | 6V @ 4mA | 32A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA10P50P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixta10p50ptrl-datasheets-0774.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 1Ohm | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 300W | 1 | Other Transistors | R-PSSO-G2 | 28ns | 44 ns | 52 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | 30A | -500V | P-Channel | 2840pF @ 25V | 1 Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH96N20P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq96n20p-datasheets-5608.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | No SVHC | 24MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 30ns | 30 ns | 75 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | TO-247AD | 225A | 1500 mJ | 200V | N-Channel | 4800pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 250μA | 96A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH2N170D2 | IXYS | $16.96 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt2n170d2-datasheets-9412.pdf | TO-247-3 | Lead Free | 568W | 1 | FET General Purpose Power | 2A | 20V | Single | 1700V | 568W Tc | N-Channel | 3650pF @ 10V | 6.5 Ω @ 1A, 0V | 2A Tj | 110nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN32N100Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfn32n100q3-datasheets-2167.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 4 | 30 Weeks | 4 | AVALANCHE RATED, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | Single | 780W | 1 | FET General Purpose Power | 45 ns | 300ns | 54 ns | 28A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 780W Tc | 96A | 0.32Ohm | 3000 mJ | 1kV | N-Channel | 9940pF @ 25V | 320m Ω @ 16A, 10V | 6.5V @ 8mA | 28A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH15N100Q3 | IXYS | $3.64 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n100q3-datasheets-1455.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | Lead Free | 3 | 20 Weeks | 3 | AVALANCHE RATED | unknown | 3 | 1 | Single | 690W | 1 | FET General Purpose Power | 28 ns | 250ns | 30 ns | 15A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 690W Tc | 45A | 1kV | N-Channel | 3250pF @ 25V | 1.05 Ω @ 7.5A, 10V | 6.5V @ 4mA | 15A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA60N10T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 100V | 176W Tc | N-Channel | 2650pF @ 25V | 18m Ω @ 25A, 10V | 4.5V @ 50μA | 60A Tc | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA110N055T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 55V | 180W Tc | N-Channel | 3060pF @ 25V | 6.6m Ω @ 25A, 10V | 4V @ 250μA | 110A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N70X2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/ixys-ixty8n70x2-datasheets-0423.pdf | TO-220-3 | 15 Weeks | yes | 700V | 150W Tc | N-Channel | 800pF @ 10V | 500m Ω @ 500mA, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ28N60P3 | IXYS | $5.43 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfq28n60p3-datasheets-3522.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | 3 | Single | 695W | 1 | FET General Purpose Power | Not Qualified | 27 ns | 18ns | 19 ns | 48 ns | 28A | 30V | SILICON | DRAIN | SWITCHING | 695W Tc | 70A | 0.26Ohm | 500 mJ | 600V | N-Channel | 3560pF @ 25V | 260m Ω @ 14A, 10V | 5V @ 2.5mA | 28A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT6N100F | IXYS |
Min: 1 Mult: 1 |
download | HiPerRF™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n100f-datasheets-9071.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 10 Weeks | 3 | yes | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | R-PSSO-G2 | 8.6ns | 8.3 ns | 31 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 180W Tc | 6A | 24A | 700 mJ | 1kV | N-Channel | 1770pF @ 25V | 1.9 Ω @ 3A, 10V | 5.5V @ 2.5mA | 6A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT15N100Q3 | IXYS | $15.47 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n100q3-datasheets-1455.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 690W | 1 | FET General Purpose Power | R-PSSO-G2 | 28 ns | 250ns | 30 ns | 15A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 690W Tc | 45A | 1000 mJ | 1kV | N-Channel | 3250pF @ 25V | 1.05 Ω @ 7.5A, 10V | 6.5V @ 4mA | 15A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK17N120L | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtk17n120l-datasheets-3780.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 24 Weeks | 900MOhm | 3 | yes | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 39ns | 63 ns | 75 ns | 17A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 700W Tc | 2500 mJ | 1.2kV | N-Channel | 8300pF @ 25V | 900m Ω @ 8.5A, 20V | 5V @ 250μA | 17A Tc | 155nC @ 15V | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH30N60X | IXYS | $31.94 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfq30n60x-datasheets-3713.pdf | TO-247-3 | 19 Weeks | 30A | 600V | 500W Tc | N-Channel | 2270pF @ 25V | 155m Ω @ 15A, 10V | 4.5V @ 4mA | 30A Tc | 56nC @ 10V | 10V | ±30V |
