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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFH70N30Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | 3 | 30 Weeks | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 830W | 1 | FET General Purpose Power | 33 ns | 250ns | 38 ns | 70A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | TO-247AD | 210A | 0.054Ohm | 1500 mJ | 300V | N-Channel | 4735pF @ 25V | 54m Ω @ 35A, 10V | 6.5V @ 4mA | 70A Tc | 98nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTR102N65X2 | IXYS | $16.81 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtr102n65x2-datasheets-0625.pdf | ISOPLUS247™ | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 54A | 650V | 330W Tc | N-Channel | 10900pF @ 25V | 33m Ω @ 51A, 10V | 5V @ 250μA | 54A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT44N50Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh44n50q3-datasheets-0657.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 830W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 250ns | 37 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 0.14Ohm | 1500 mJ | 500V | N-Channel | 4800pF @ 25V | 140m Ω @ 22A, 10V | 6.5V @ 4mA | 44A Tc | 93nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFR90N20 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | ISOPLUS247™ | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 200V | 200V | 0.022Ohm | N-Channel | 90A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK73N30Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx73n30q-datasheets-0740.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 36ns | 12 ns | 82 ns | 73A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 292A | 0.045Ohm | 2500 mJ | 300V | N-Channel | 5400pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 4mA | 73A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFX20N120 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx20n120-datasheets-0789.pdf | TO-247-3 | Lead Free | 3 | 6g | No SVHC | 750mOhm | 3 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 780W | 1 | 45ns | 20 ns | 75 ns | 20A | 30V | 1.2kV | SILICON | DRAIN | SWITCHING | 1200V | 4.5V | 780W Tc | 300 ns | 80A | 2000 mJ | 1.2kV | N-Channel | 7400pF @ 25V | 4.5 V | 750m Ω @ 500mA, 10V | 4.5V @ 8mA | 20A Tc | 160nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| FMD47-06KC5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-fmd4706kc5-datasheets-0824.pdf | ISOPLUSi5-Pak™ | 5 | 32 Weeks | 5 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 47A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFR27N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr27n80q-datasheets-0859.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 28ns | 13 ns | 50 ns | 27A | 20V | SILICON | ISOLATED | SWITCHING | 500W Tc | 108A | 2500 mJ | 800V | N-Channel | 7600pF @ 25V | 300m Ω @ 13.5A, 10V | 4.5V @ 4mA | 27A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFK48N60Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx48n60q3-datasheets-3687.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 1kW | 1 | FET General Purpose Power | 37 ns | 300ns | 40 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 120A | 0.14Ohm | 2000 mJ | 600V | N-Channel | 7020pF @ 25V | 140m Ω @ 24A, 10V | 6.5V @ 4mA | 48A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFR12N100Q | IXYS | $2.81 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfr12n100q-datasheets-0945.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 23ns | 15 ns | 40 ns | 10A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 250W Tc | 48A | 1kV | N-Channel | 2900pF @ 25V | 1.1 Ω @ 6A, 10V | 5.5V @ 4mA | 10A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFL44N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfl44n60-datasheets-0989.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.21mm | 3 | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSIP-T3 | 42 ns | 55ns | 45 ns | 110 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 500W Tc | 176A | 0.13Ohm | 3000 mJ | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 8mA | 41A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFN40N90P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn40n90p-datasheets-1026.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 695W | 1 | FET General Purpose Power | Not Qualified | 33A | 30V | SILICON | ISOLATED | SWITCHING | 695W Tc | 80A | 900V | N-Channel | 14000pF @ 25V | 210m Ω @ 20A, 10V | 6.5V @ 1mA | 33A Tc | 230nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFR30N110P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr30n110p-datasheets-1060.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 320W | 1 | FET General Purpose Power | Not Qualified | 48ns | 52 ns | 83 ns | 16A | 30V | SILICON | ISOLATED | SWITCHING | 1100V | 320W Tc | 75A | 0.4Ohm | 1500 mJ | 1.1kV | N-Channel | 13600pF @ 25V | 400m Ω @ 15A, 10V | 6.5V @ 1mA | 16A Tc | 235nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| MMIX1F230N20T | IXYS | $42.82 |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f230n20t-datasheets-1091.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 30 Weeks | 24 | EAR99 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 1 | R-PDSO-G21 | 58 ns | 62 ns | 168A | 30V | SILICON | ISOLATED | SWITCHING | 200V | 200V | 600W Tc | 630A | 0.0083Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 8.3m Ω @ 60A, 10V | 5V @ 8mA | 168A Tc | 378nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTN21N100 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixtk21n100-datasheets-1027.pdf | 1kV | 21A | SOT-227-4, miniBLOC | Lead Free | 4 | No SVHC | 550mOhm | 3 | EAR99 | unknown | 8541.29.00.95 | UPPER | UNSPECIFIED | 4 | 520W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 50ns | 40 ns | 100 ns | 21A | 20V | 1kV | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 4.5V | 520W Tc | 84A | 1kV | N-Channel | 8400pF @ 25V | 4.5 V | 550m Ω @ 500mA, 10V | 4.5V @ 500μA | 21A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFK60N55Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx60n55q2-datasheets-0940.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 88MOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | Not Qualified | 22 ns | 14ns | 9 ns | 57 ns | 60A | 30V | SILICON | DRAIN | 735W Tc | 240A | 4000 mJ | 550V | N-Channel | 7300pF @ 25V | 88m Ω @ 30A, 10V | 4.5V @ 8mA | 60A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTP2N80 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80-datasheets-9546.pdf | TO-220-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 54W | 1 | Not Qualified | 18ns | 15 ns | 30 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 54W Tc | TO-220AB | 2A | 8A | 200 mJ | 800V | N-Channel | 440pF @ 25V | 6.2 Ω @ 500mA, 10V | 5.5V @ 250μA | 2A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA110N055T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta110n055t7-datasheets-1667.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | R-PSFM-G6 | 30ns | 24 ns | 40 ns | 110A | SILICON | DRAIN | SWITCHING | 230W Tc | 112A | 300A | 0.007Ohm | 750 mJ | 55V | N-Channel | 3080pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 100μA | 110A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTA102N15T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 150V | 455W Tc | N-Channel | 5220pF @ 25V | 18m Ω @ 51A, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R4N120P | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixty1r4n120p-datasheets-4117.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | FET General Purpose Power | 1.4A | Single | 86W | 1200V | N-Channel | 4.5V @ 100μA | 1.4A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA340N04T4-7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixta340n04t4-datasheets-9966.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 24 Weeks | yes | unknown | 340A | 40V | 480W Tc | N-Channel | 13000pF @ 25V | 1.7m Ω @ 100A, 10V | 4V @ 250μA | 340A Tc | 256nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA44N25T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 44A | 250V | N-Channel | 44A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP170N075T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta170n075t2-datasheets-2178.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 11ns | 19 ns | 25 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 510A | 0.0054Ohm | 600 mJ | 75V | N-Channel | 6860pF @ 25V | 5.4m Ω @ 50A, 10V | 4V @ 250μA | 170A Tc | 109nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA76N25T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 250V | 460W Tc | N-Channel | 4500pF @ 25V | 39m Ω @ 38A, 10V | 5V @ 1mA | 76A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R4N120PHV | IXYS | $3.45 |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n120p-datasheets-9773.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1200V | 86W Tc | N-Channel | 666pF @ 25V | 13 Ω @ 700mA, 10V | 4.5V @ 100μA | 1.4A Tc | 24.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA80N10T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | 100V | 230W Tc | N-Channel | 3040pF @ 25V | 14m Ω @ 25A, 10V | 5V @ 100μA | 80A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU01N80 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixty01n80-datasheets-3285.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | yes | EAR99 | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | 12ns | 28 ns | 28 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 25W Tc | 0.1A | 0.4A | 800V | N-Channel | 60pF @ 25V | 50 Ω @ 100mA, 10V | 4.5V @ 25μA | 100mA Tc | 8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA120N04T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp120n04t2-datasheets-4305.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 8ns | 11 ns | 16 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 360A | 0.0061Ohm | 400 mJ | 40V | N-Channel | 3240pF @ 25V | 6.1m Ω @ 25A, 10V | 4V @ 250μA | 120A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTY3N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n50p-datasheets-5773.pdf | 500V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 15ns | 12 ns | 38 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-252AA | 8A | 2Ohm | 180 mJ | 500V | N-Channel | 409pF @ 25V | 2 Ω @ 1.8A, 10V | 5.5V @ 50μA | 3.6A Tc | 9.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTV30N50PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50p-datasheets-3823.pdf | 500V | 30A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 70nC @ 10V | 10V | ±30V |
