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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFP60N25X3M | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp60n25x3m-datasheets-3602.pdf | TO-220-3 | 19 Weeks | yes | 250V | 36W Tc | N-Channel | 3610pF @ 25V | 23m Ω @ 30A, 10V | 4.5V @ 1.5mA | 60A Tc | 50nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX48N60Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx48n60q3-datasheets-3687.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | unknown | 3 | Single | 1kW | 1 | FET General Purpose Power | R-PSIP-T3 | 37 ns | 300ns | 40 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 120A | 0.14Ohm | 2000 mJ | 600V | N-Channel | 7020pF @ 25V | 140m Ω @ 24A, 10V | 6.5V @ 4mA | 48A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFN210N30P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfn210n30p3-datasheets-3752.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 30 Weeks | 4 | Single | 1.5kW | FET General Purpose Power | 46 ns | 25ns | 13 ns | 94 ns | 192A | 20V | 1500W Tc | 300V | N-Channel | 16200pF @ 25V | 14.5m Ω @ 105A, 10V | 5V @ 8mA | 192A Tc | 268nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXKH24N60C5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkh24n60c5-datasheets-3813.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 32 Weeks | 165MOhm | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 24A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 522 mJ | 600V | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 24A Tc | 52nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTV98N20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 98A | 200V | N-Channel | 98A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA18N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp18n60x-datasheets-3822.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 18A | 600V | 320W Tc | N-Channel | 1440pF @ 25V | 230m Ω @ 9A, 10V | 4.5V @ 1.5mA | 18A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP34N65X2M | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 650V | 40W Tc | N-Channel | 3230pF @ 25V | 100m Ω @ 17A, 10V | 5V @ 1.5mA | 34A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT4N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft4n100q-datasheets-3940.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 3 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15ns | 18 ns | 32 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 150W Tc | 4A | 16A | 3Ohm | 700 mJ | 1kV | N-Channel | 1050pF @ 25V | 3 Ω @ 2A, 10V | 5V @ 1.5mA | 4A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| IXTQ88N15 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 88A | 150V | N-Channel | 88A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA15N50L2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 500V | 300W Tc | N-Channel | 4080pF @ 25V | 480m Ω @ 7.5A, 10V | 4.5V @ 250μA | 15A Tc | 123nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N65X2 | IXYS | $9.86 |
Min: 1 Mult: 1 |
download | 23 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT50N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60x-datasheets-4003.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 50A | 600V | 660W Tc | N-Channel | 4660pF @ 25V | 73m Ω @ 25A, 10V | 4.5V @ 4mA | 50A Tc | 116nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ26N50 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 26A | 500V | N-Channel | 26A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK120N20P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfh120n20p-datasheets-4160.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 35ns | 31 ns | 100 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | 300A | 0.022Ohm | 2000 mJ | 200V | N-Channel | 6000pF @ 25V | 22m Ω @ 500mA, 10V | 5V @ 4mA | 120A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFH120N25T | IXYS | $65.13 |
Min: 1 Mult: 1 |
download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfh120n25t-datasheets-4267.pdf | TO-247-3 | 3 | 30 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 890W Tc | TO-247AD | 300A | 0.023Ohm | 500 mJ | N-Channel | 11300pF @ 25V | 23m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTH72N20 | IXYS | $2.06 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth72n20-datasheets-4294.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 30ns | 20 ns | 80 ns | 72A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 288A | 1500 mJ | 200V | N-Channel | 4400pF @ 25V | 33m Ω @ 500mA, 10V | 4V @ 250μA | 72A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFH11N80 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n80-datasheets-2163.pdf | 800V | 11A | TO-247-3 | Lead Free | 3 | 950mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 32 ns | 63 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 44A | 800V | N-Channel | 4200pF @ 25V | 950m Ω @ 500mA, 10V | 4.5V @ 4mA | 11A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTH10N100D | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d-datasheets-4365.pdf | TO-247-3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 85ns | 75 ns | 110 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 400W Tc | 20A | 1kV | N-Channel | 2500pF @ 25V | 1.4 Ω @ 10A, 10V | 3.5V @ 250μA | 10A Tc | 130nC @ 10V | Depletion Mode | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFQ23N60Q | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 23A | 600V | N-Channel | 23A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXUV170N075S | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | PLUS-220SMD | 220 | 300W | Single | 300W | 175A | 5.3mOhm | 75V | N-Channel | 175A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT16N120P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 1200V | 660W Tc | N-Channel | 6900pF @ 25V | 950m Ω @ 8A, 10V | 6.5V @ 1mA | 16A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR80N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n60p3-datasheets-4547.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 30 Weeks | 247 | Single | FET General Purpose Power | 48 ns | 87 ns | 48A | 30V | 600V | 540W Tc | N-Channel | 13100pF @ 25V | 76m Ω @ 40A, 10V | 5V @ 8mA | 48A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFK44N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfk44n50-datasheets-7596.pdf | 500V | 44A | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 60ns | 30 ns | 100 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 176A | 0.12Ohm | 500V | N-Channel | 8400pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 8mA | 44A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTA102N15T | IXYS | $4.19 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta102n15t-datasheets-9411.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 455W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14ns | 22 ns | 25 ns | 102A | 20V | SILICON | DRAIN | SWITCHING | 455W Tc | 300A | 0.018Ohm | 750 mJ | 150V | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTH74N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 74A | 150V | N-Channel | 74A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA16N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp16n50p3-datasheets-3145.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 30 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | THROUGH-HOLE | 1 | FET General Purpose Power | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 330W Tc | TO-220AB | 40A | 0.36Ohm | 300 mJ | N-Channel | 1515pF @ 25V | 360m Ω @ 8A, 10V | 5V @ 2.5mA | 16A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFA34N65X2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 650V | 540W Tc | N-Channel | 3230pF @ 25V | 100m Ω @ 17A, 10V | 5V @ 2.5mA | 34A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA76N15T2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp76n15t2-datasheets-5436.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 76A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 350W Tc | TO-263AA | 200A | 0.02Ohm | 500 mJ | N-Channel | 5800pF @ 25V | 20m Ω @ 38A, 10V | 4.5V @ 250μA | 76A Tc | 97nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFA44N25X3 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 250V | 240W Tc | N-Channel | 2200pF @ 25V | 40m Ω @ 22A, 10V | 4.5V @ 1mA | 44A Tc | 33nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH14N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n60p3-datasheets-0202.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 24 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1 | FET General Purpose Power | 21 ns | 43 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 327W Tc | TO-247AD | 0.54Ohm | 700 mJ | N-Channel | 1480pF @ 25V | 540m Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 25nC @ 10V | 10V | ±30V |
