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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA75N10P | IXYS | $4.41 |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta75n10p-datasheets-5494.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 53ns | 45 ns | 66 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 200A | 0.025Ohm | 1000 mJ | 100V | N-Channel | 2250pF @ 25V | 25m Ω @ 500mA, 10V | 5.5V @ 250μA | 75A Tc | 74nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFK170N10P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n10p-datasheets-5575.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 10mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 714W | 1 | FET General Purpose Power | 50ns | 33 ns | 90 ns | 170A | 20V | 100V | SILICON | DRAIN | SWITCHING | 5V | 715W Tc | 150 ns | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 5 V | 9m Ω @ 500mA, 10V | 5V @ 4mA | 170A Tc | 198nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFX52N100X | IXYS | $30.12 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk52n100x-datasheets-5671.pdf | TO-247-3 | 19 Weeks | 1000V | 1250W Tc | N-Channel | 6725pF @ 25V | 125m Ω @ 26A, 10V | 6V @ 4mA | 52A Tc | 245nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK80N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n60p3-datasheets-9089.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | 3 | 1 | Single | 1.3kW | 1 | FET General Purpose Power | 48 ns | 25ns | 8 ns | 87 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1300W Tc | 200A | 0.07Ohm | 2000 mJ | 600V | N-Channel | 13100pF @ 25V | 70m Ω @ 500mA, 10V | 5V @ 8mA | 80A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTH10N100D2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d2-datasheets-7031.pdf | TO-247-3 | 3 | 24 Weeks | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 695W Tc | N-Channel | 5320pF @ 25V | 1.5 Ω @ 5A, 10V | 10A Tc | 200nC @ 5V | Depletion Mode | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTT1N300P3HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixtt1n300p3hv-datasheets-7175.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | unknown | 1A | 3000V | 195W Tc | N-Channel | 895pF @ 25V | 50 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 30.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT2N300P3HV | IXYS | $42.68 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~155°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtt2n300p3hv-datasheets-2202.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | unknown | 2A | 3000V | 520W Tc | N-Channel | 1890pF @ 25V | 21 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH52N50P2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n50p2-datasheets-1534.pdf | TO-247-3 | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 52A | 30V | SILICON | DRAIN | SWITCHING | 960W Tc | 150A | 0.12Ohm | 1500 mJ | 500V | N-Channel | 6800pF @ 25V | 120m Ω @ 26A, 10V | 4.5V @ 4mA | 52A Tc | 113nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTA4N80P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 800V | 100W Tc | N-Channel | 750pF @ 25V | 3.4 Ω @ 1.8A, 10V | 5.5V @ 100μA | 3.6A Tc | 14.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU01N100D | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty01n100d-datasheets-0137.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 24 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.1W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 6ns | 6 ns | 30 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 1.1W Ta 25W Tc | 0.1A | 0.4A | 110Ohm | 1kV | N-Channel | 120pF @ 25V | 80 Ω @ 50mA, 0V | 5V @ 25μA | 100mA Tc | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||
| IXFA10N80P | IXYS | $0.38 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfa10n80p-datasheets-2794.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 22ns | 22 ns | 62 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 300W Tc | 600 mJ | 800V | N-Channel | 2050pF @ 25V | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 10A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFA30N25X3 | IXYS | $5.80 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy30n25x3-datasheets-4884.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 250V | 176W Tc | N-Channel | 1450pF @ 25V | 60m Ω @ 15A, 10V | 4.5V @ 500μA | 30A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX110N20L2 | IXYS |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx110n20l2-datasheets-3655.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 200V | 200V | 960W Tc | 275A | 0.024Ohm | 5000 mJ | N-Channel | 23000pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 3mA | 110A Tc | 500nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFL132N50P3 | IXYS | $28.30 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfl132n50p3-datasheets-3725.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.31mm | 3 | 26 Weeks | 264 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | 44 ns | 72 ns | 63A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 520W Tc | 330A | 0.043Ohm | 3000 mJ | N-Channel | 18600pF @ 25V | 43m Ω @ 66A, 10V | 5V @ 8mA | 63A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFA16N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfa16n60p3-datasheets-3792.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 347W Tc | 40A | 0.44Ohm | 800 mJ | N-Channel | 1830pF @ 25V | 440m Ω @ 8A, 10V | 5V @ 1.5mA | 16A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTH48N20 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth48n20-datasheets-3828.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 275W | 1 | Not Qualified | 19ns | 17 ns | 79 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 275W Tc | TO-247AD | 192A | 0.05Ohm | 1000 mJ | 200V | N-Channel | 3000pF @ 25V | 50m Ω @ 15A, 10V | 4V @ 250μA | 48A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFP16N85XM | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH60N15 | IXYS | $1.96 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth60n15-datasheets-3891.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 275W | 1 | Not Qualified | 20ns | 18 ns | 85 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 275W Tc | TO-247AD | 240A | 1000 mJ | 150V | N-Channel | 3000pF @ 25V | 33m Ω @ 15A, 10V | 4V @ 250μA | 60A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA02N250HV-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 2500V | 83W Tc | N-Channel | 116pF @ 25V | 450 Ω @ 50mA, 10V | 4.5V @ 250μA | 200mA Tc | 7.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT16N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh16n80p-datasheets-7014.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 32ns | 29 ns | 75 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 0.6Ohm | 1000 mJ | 800V | N-Channel | 4600pF @ 25V | 600m Ω @ 500mA, 10V | 5V @ 4mA | 16A Tc | 71nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTH44P15T | IXYS | $6.58 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp44p15t-datasheets-5534.pdf | TO-247-3 | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 298W Tc | 130A | 0.065Ohm | 1000 mJ | P-Channel | 13400pF @ 25V | 65m Ω @ 500mA, 10V | 4V @ 250μA | 44A Tc | 175nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||
| IXTP20N65XM | IXYS | $7.57 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtp20n65xm-datasheets-4071.pdf | TO-220-3 | 15 Weeks | 9A | 650V | 63W Tc | N-Channel | 1390pF @ 25V | 210m Ω @ 10A, 10V | 5.5V @ 250μA | 9A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ22N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n60p3-datasheets-4386.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 26 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 500W | 1 | FET General Purpose Power | Not Qualified | 28 ns | 17ns | 19 ns | 54 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 55A | 400 mJ | 600V | N-Channel | 2600pF @ 25V | 360m Ω @ 11A, 10V | 5V @ 1.5mA | 22A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTA6N100D2HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | compliant | 1000V | 300W Tc | N-Channel | 2650pF @ 10V | 2.2 Ω @ 3A, 0V | 4.5V @ 250μA | 6A Tj | 95nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH24N50 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth24n50-datasheets-4211.pdf | 500V | 24A | TO-247-3 | Lead Free | 3 | 28 Weeks | No SVHC | 230mOhm | 3 | yes | EAR99 | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 30 ns | 65 ns | 24A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-247AD | 96A | 500V | N-Channel | 4200pF @ 25V | 4 V | 230m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTR90P10P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr90p10p-datasheets-4248.pdf | ISOPLUS247™ | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 57A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 190W Tc | 225A | 0.027Ohm | 2500 mJ | P-Channel | 5800pF @ 25V | 27m Ω @ 45A, 10V | 4V @ 250μA | 57A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFX32N80P | IXYS | $1.32 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n80p-datasheets-4281.pdf | TO-247-3 | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | 24ns | 24 ns | 85 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 0.27Ohm | 2000 mJ | 800V | N-Channel | 8800pF @ 25V | 270m Ω @ 16A, 10V | 5V @ 8mA | 32A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTT500N04T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt500n04t2-datasheets-4316.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | SINGLE | GULL WING | 4 | 1kW | 1 | FET General Purpose Power | R-PSSO-G2 | 500A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1000W Tc | 800 mJ | N-Channel | 25000pF @ 25V | 1.6m Ω @ 100A, 10V | 3.5V @ 250μA | 500A Tc | 405nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTH20N60 | IXYS | $0.78 |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixth20n60-datasheets-4357.pdf | 600V | 20A | TO-247-3 | Lead Free | 3 | 8 Weeks | 350mOhm | 3 | yes | No | 3 | Single | 300W | 1 | FET General Purpose Power | 43ns | 40 ns | 70 ns | 20A | 20V | SILICON | ISOLATED | SWITCHING | 300W Tc | TO-247AD | 80A | 600V | N-Channel | 4500pF @ 25V | 350m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTK128N15 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtk128n15-datasheets-4381.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 30ns | 17 ns | 115 ns | 128A | 20V | SILICON | DRAIN | SWITCHING | 540W Tc | 512A | 0.015Ohm | 2500 mJ | 150V | N-Channel | 6000pF @ 25V | 15m Ω @ 500mA, 10V | 4V @ 250μA | 128A Tc | 240nC @ 10V | 10V | ±20V |
