Products
Manufacturer
RFQ
NEWS
ContactIXYS(5222)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFX62N25 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx62n25-datasheets-4351.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 390W | 1 | FET General Purpose Power | Not Qualified | 25ns | 15 ns | 115 ns | 62A | 20V | SILICON | DRAIN | SWITCHING | 390W Tc | 248A | 1500 mJ | 250V | N-Channel | 6600pF @ 25V | 35m Ω @ 31A, 10V | 4V @ 4mA | 62A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFH30N60Q | IXYS | $12.31 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60q-datasheets-4376.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 32ns | 16 ns | 80 ns | 30A | 20V | SILICON | DRAIN | 500W Tc | TO-247AD | 120A | 1500 mJ | 600V | N-Channel | 4700pF @ 25V | 230m Ω @ 500mA, 10V | 4.5V @ 4mA | 30A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT16N50D2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth16n50d2-datasheets-4362.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 24 Weeks | Single | 695W | TO-268 | 5.25nF | 173ns | 220 ns | 203 ns | 16A | 20V | 500V | 695W Tc | 300mOhm | 500V | N-Channel | 5250pF @ 25V | 240mOhm @ 8A, 0V | 16A Tc | 199nC @ 5V | Depletion Mode | 240 mΩ | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT70N20Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixft70n20q3-datasheets-4448.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | not_compliant | GULL WING | 4 | Single | 690W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 17 ns | 10ns | 9 ns | 24 ns | 70A | 30V | SILICON | DRAIN | SWITCHING | 690W Tc | 210A | 0.04Ohm | 1500 mJ | 200V | N-Channel | 3150pF @ 25V | 40m Ω @ 35A, 10V | 6.5V @ 4mA | 70A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFN32N120P | IXYS | $42.18 |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfn32n120p-datasheets-4502.pdf | SOT-227-4, miniBLOC | 4 | 20 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 830W | 1 | FET General Purpose Power | 62ns | 48 ns | 88 ns | 32A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 1000W Tc | 2000 mJ | 1.2kV | N-Channel | 21000pF @ 25V | 310m Ω @ 500mA, 10V | 6.5V @ 1mA | 32A Tc | 360nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| VMO650-01F | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-vmo65001f-datasheets-4673.pdf | 100V | 690A | Y3-DCB | Lead Free | 4 | 28 Weeks | 4 | yes | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | NOT SPECIFIED | 2.5kW | 1 | FET General Purpose Power | Not Qualified | 500ns | 200 ns | 800 ns | 690A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2500W Tc | 2780A | 0.0018Ohm | 100V | N-Channel | 59000pF @ 25V | 1.8m Ω @ 500mA, 10V | 6V @ 130mA | 690A Tc | 2300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFN180N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfn180n20-datasheets-8096.pdf | 200V | 180A | SOT-227-4, miniBLOC | 4 | 46g | No SVHC | 10MOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 85ns | 56 ns | 180 ns | 180A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 700W Tc | 720A | 4000 mJ | 200V | N-Channel | 22000pF @ 25V | 4 V | 10m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 660nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTP62N15P | IXYS | $16.20 |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta62n15p-datasheets-5532.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | Not Qualified | 27 ns | 38ns | 35 ns | 76 ns | 62A | 20V | SILICON | DRAIN | SWITCHING | 350W Tc | TO-220AB | 150A | 0.04Ohm | 1000 mJ | 150V | N-Channel | 2250pF @ 25V | 40m Ω @ 31A, 10V | 5.5V @ 250μA | 62A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTH48N20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 48A | 200V | 275W Tc | N-Channel | 48A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA2R4N120P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1200V | 125W Tc | N-Channel | 1207pF @ 25V | 7.5 Ω @ 1.2A, 10V | 4.5V @ 250μA | 2.4A Tc | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA340N04T4 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixta340n04t4-datasheets-9966.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | yes | 40V | 480W Tc | N-Channel | 13000pF @ 25V | 1.7m Ω @ 100A, 10V | 4V @ 250μA | 340A Tc | 256nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH20N50P3 | IXYS | $6.06 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfq20n50p3-datasheets-3225.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 20 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | 3 | Single | 1 | FET General Purpose Power | 10 ns | 43 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 5V | 380W Tc | TO-247AD | 40A | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 20A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFA102N15T | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfa102n15t-datasheets-0109.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 102A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 455W Tc | TO-263AA | 300A | 0.018Ohm | 750 mJ | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTP2N100 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n100-datasheets-9903.pdf | TO-220-3 | Lead Free | 3 | 7.5MOhm | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | 15ns | 30 ns | 60 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 100W Tc | TO-220AB | 2A | 8A | 150 mJ | 1kV | N-Channel | 825pF @ 25V | 7 Ω @ 1A, 10V | 4.5V @ 250μA | 2A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTQ98N20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 98A | 200V | N-Channel | 98A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ96N25T | IXYS | $10.97 |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtv96n25t-datasheets-3866.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | 22ns | 28 ns | 59 ns | 96A | 30V | SILICON | DRAIN | SWITCHING | 625W Tc | 250A | 0.029Ohm | 2000 mJ | 250V | N-Channel | 6100pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 96A Tc | 114nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTP24N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth24n65x2-datasheets-0403.pdf | TO-220-3 | 15 Weeks | compliant | 650V | 390W Tc | N-Channel | 2060pF @ 25V | 145m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH46N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 30 Weeks | compliant | 300V | 460W Tc | N-Channel | 4770pF @ 25V | 80m Ω @ 23A, 10V | 5V @ 4mA | 46A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ32N65X | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth32n65x-datasheets-3818.pdf | TO-3P-3, SC-65-3 | 15 Weeks | 32A | 650V | 500W Tc | N-Channel | 2205pF @ 25V | 135m Ω @ 16A, 10V | 5.5V @ 250μA | 32A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH102N15T | IXYS | $12.97 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth102n15t-datasheets-0597.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 455W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 14ns | 22 ns | 25 ns | 102A | 20V | SILICON | DRAIN | SWITCHING | 455W Tc | 300A | 0.018Ohm | 750 mJ | 150V | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXKC25N80C | IXYS | $43.47 |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixkc25n80c-datasheets-0643.pdf | ISOPLUS220™ | Lead Free | 3 | 32 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 140W | 1 | FET General Purpose Power | Not Qualified | 25ns | 10 ns | 75 ns | 25A | 20V | SILICON | ISOLATED | SWITCHING | TO-220AB | 20A | 0.15Ohm | 690 mJ | 800V | N-Channel | 4600pF @ 25V | 150m Ω @ 18A, 10V | 4V @ 2mA | 25A Tc | 180nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTR90P20P | IXYS | $20.62 |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr90p20p-datasheets-0695.pdf | ISOPLUS247™ | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 53A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 312W Tc | 270A | 0.048Ohm | P-Channel | 12000pF @ 25V | 48m Ω @ 45A, 10V | 4V @ 1mA | 53A Tc | 205nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTK600N04T2 | IXYS |
Min: 1 Mult: 1 |
download | FRFET®, SupreMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx600n04t2-datasheets-0723.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | unknown | 200A | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 40V | 600A | 40 ns | 20ns | 250 ns | 90 ns | 600A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.5m Ω @ 100A, 10V | 3.5V @ 250μA | 600A Tc | 590nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| MMIX1T660N04T4 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 24-PowerSMD, 21 Leads | 28 Weeks | compliant | 40V | 830W Tc | N-Channel | 44000pF @ 25V | 850μ Ω @ 100A, 10V | 4V @ 250μA | 660A Tc | 860nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK150N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n10-datasheets-3450.pdf | TO-264-3, TO-264AA | TO-264AA (IXFK) | 9nF | 150A | 100V | 500W Tc | N-Channel | 9000pF @ 25V | 12mOhm @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 12 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR21N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfr21n100q-datasheets-0848.pdf | ISOPLUS247™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | 18ns | 12 ns | 60 ns | 18A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 350W Tc | 19A | 84A | 0.5Ohm | 2500 mJ | 1kV | N-Channel | 5900pF @ 25V | 500m Ω @ 10.5A, 10V | 5V @ 4mA | 18A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTA4N150HV | IXYS | $19.31 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtt4n150hv-datasheets-3671.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | 4A | 1500V | 280W Tc | N-Channel | 1576pF @ 25V | 6 Ω @ 500mA, 10V | 5V @ 250μA | 4A Tc | 44.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL38N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfl38n100p-datasheets-0926.pdf | ISOPLUSi5-Pak™ | Lead Free | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 55ns | 40 ns | 71 ns | 29A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 520W Tc | 120A | 2000 mJ | 1kV | N-Channel | 24000pF @ 25V | 230m Ω @ 19A, 10V | 6.5V @ 1mA | 29A Tc | 350nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTN32P60P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtn32p60p-datasheets-0963.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 27ns | 33 ns | 95 ns | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 890W Tc | 96A | 0.35Ohm | 3500 mJ | 600V | P-Channel | 11100pF @ 25V | 350m Ω @ 500mA, 10V | 4V @ 1mA | 32A Tc | 196nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| MKE38P600LB-TRR | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-mke38p600tlbtrr-datasheets-0392.pdf | 9-SMD Module | yes | 50A | 600V | N-Channel | 50A Tc |
