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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Voltage | Output Current | Forward Current | Forward Voltage | Turn On Delay Time | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Application | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Reverse Recovery Time-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| W4693QK080 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | WD2 | Standard Recovery >500ns, > 200mA (Io) | 15.5μs | Standard | 800V | 50mA @ 800V | 1.05V @ 3000A | 4693A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M1022LC120 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | W4 | Standard Recovery >500ns, > 200mA (Io) | 3μs | Standard | 1200V | 100mA @ 1200V | 1.85V @ 2050A | 1022A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA17-16A | IXYS |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | Not Applicable | 180°C | -40°C | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dsa1716a-datasheets-9402.pdf | 1.6kV | 40A | DO-203AA, DO-4, Stud | 31.32mm | 11mm | Lead Free | 12 Weeks | No SVHC | 2 | Reverse | Single | DO-203AA | 40A | 25A | 1.36V | 370A | Standard Recovery >500ns, > 200mA (Io) | 400A | 4mA | 1.6kV | 400A | 1.6kV | Avalanche | 1.6kV | 25A | 1600V | 4mA @ 1600V | 1.36V @ 55A | 25A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2505MC250 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AC, K-PUK | 8 Weeks | Standard Recovery >500ns, > 200mA (Io) | 7.6μs | Standard | 2500V | 991mV @ 2000A | 2505A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W0944WC150 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | 190°C | -40°C | ROHS3 Compliant | 2004 | 42mm | DO-200AB, B-PUK | 14.4mm | 8 Weeks | 2 | Single | W1 | 945A | Standard Recovery >500ns, > 200mA (Io) | 9kA | 15mA | 1.5kV | Standard | 1500V | 15mA @ 1500V | 1.45V @ 1930A | 944A | -40°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W1730JK240 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 2400V | 30mA @ 2400V | 1.2V @ 1000A | 1730A | -40°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DCG10P1200HR | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Tube | TO-247-3 | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 755pF @ 0V 1MHz | 1200V | 250μA @ 1200V | 1.8V @ 10A | 12.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSAI75-12B | IXYS |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dsai7516b-datasheets-8519.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | 2 | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | 1.17V | 1.4kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 6mA | 1.5kA | 1.2kV | Avalanche | 1.2kV | 110A | 1400A | 1 | 1200V | 6mA @ 1200V | 1.17V @ 150A | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS20-025AS | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-dgsk40025as-datasheets-7941.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 30A | 2mA | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | GALLIUM ARSENIDE | 48W | Schottky | 250V | 18A | 1 | 0.014μs | 2mA @ 250V | 1.5V @ 7.5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP75-06AR | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | ISOPLUS247™ | 3 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | ISOLATED | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100mA | 35 ns | Standard | 600V | 75A | 1000A | 1 | 1mA @ 600V | 2.02V @ 75A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDO1200-14N1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tray | 1 (Unlimited) | RoHS Compliant | Y1-CU | MDO1200 | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.4kV | 1400V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP76P10T | IXYS | $4.79 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta76p10t-datasheets-1624.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 298W | 1 | Other Transistors | R-PSFM-T3 | 40ns | 20 ns | 52 ns | 76A | 20V | SILICON | DRAIN | SWITCHING | 100V | 298W Tc | TO-220AB | 230A | 0.024Ohm | -100V | P-Channel | 13700pF @ 25V | 25m Ω @ 500mA, 10V | 4V @ 250μA | 76A Tc | 197nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH320N10T2 | IXYS | $31.93 |
Min: 1 Mult: 1 |
download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfh320n10t2-datasheets-2196.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1kW | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 46ns | 177 ns | 73 ns | 320A | 20V | SILICON | DRAIN | SWITCHING | 1000W Tc | 800A | 0.0035Ohm | 1500 mJ | 100V | N-Channel | 26000pF @ 25V | 3.5m Ω @ 100A, 10V | 4V @ 250μA | 320A Tc | 430nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP18P10T | IXYS | $1.91 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp18p10t-datasheets-2547.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 18A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 83W Tc | TO-220AB | 60A | 0.12Ohm | 200 mJ | P-Channel | 2100pF @ 25V | 120m Ω @ 9A, 10V | 4.5V @ 250μA | 18A Tc | 39nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP26N30X3 | IXYS | $3.61 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy26n30x3-datasheets-3776.pdf | TO-220-3 | 19 Weeks | 300V | 170W Tc | N-Channel | 1.465nF @ 25V | 66m Ω @ 13A, 10V | 4.5V @ 500μA | 26A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH56N30X3 | IXYS | $10.44 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh56n30x3-datasheets-4872.pdf | TO-247-3 | 19 Weeks | 300V | 320W Tc | N-Channel | 3.75nF @ 25V | 27m Ω @ 28A, 10V | 4.5V @ 1.5mA | 56A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN80N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn80n50-datasheets-1824.pdf | 500V | 80A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 36mg | No SVHC | 55mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 780W | 1 | FET General Purpose Power | 70ns | 27 ns | 102 ns | 80A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4.5V | 700W Tc | 250 ns | 250 ns | 320A | 6000 mJ | 500V | N-Channel | 9890pF @ 25V | 4.5 V | 55m Ω @ 500mA, 10V | 4.5V @ 8mA | 66A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX64N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx64n60p3-datasheets-2082.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED | 3 | Single | 1.13kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 43 ns | 17ns | 11 ns | 66 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1130W Tc | 160A | 0.095Ohm | 1500 mJ | 600V | N-Channel | 9900pF @ 25V | 95m Ω @ 32A, 10V | 5V @ 4mA | 64A Tc | 145nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX300N20X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfx300n20x3-datasheets-2423.pdf | TO-247-3 | 19 Weeks | 200V | 1250W Tc | N-Channel | 23800pF @ 25V | 4m Ω @ 150A, 10V | 4.5V @ 8mA | 300A Tc | 375nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH130N20T | IXYS | $4.91 |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth130n20t-datasheets-5451.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 830W Tc | TO-247AD | 320A | 0.016Ohm | 1000 mJ | N-Channel | 8800pF @ 25V | 16m Ω @ 500mA, 10V | 5V @ 1mA | 130A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH80N20L | IXYS |
Min: 1 Mult: 1 |
download | Linear™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixth80n20l-datasheets-5563.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | 3 | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 520W Tc | 2500 mJ | N-Channel | 6160pF @ 25V | 32m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK52N100X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk52n100x-datasheets-5671.pdf | TO-264-3, TO-264AA | 19 Weeks | 1000V | 1250W Tc | N-Channel | 6725pF @ 25V | 125m Ω @ 26A, 10V | 6V @ 4mA | 52A Tc | 245nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP3N50D2 | IXYS | $9.59 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixta3n50d2-datasheets-3561.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | UL RECOGNIZED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 125W Tc | TO-220AB | N-Channel | 1070pF @ 25V | 1.5 Ω @ 1.5A, 0V | 3A Tc | 40nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA32P20T | IXYS | $7.57 |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp32p20t-datasheets-5492.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 300W Tc | 96A | 0.13Ohm | 1000 mJ | P-Channel | 14500pF @ 25V | 130m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 185nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK210P10T | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtk210p10t-datasheets-3638.pdf | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | NO | SINGLE | THROUGH-HOLE | 3 | 150°C | 1 | Other Transistors | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 1040W | 100V | METAL-OXIDE SEMICONDUCTOR | TO-264AA | 210A | 800A | 0.0075Ohm | 3000 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN100N50Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn100n50q3-datasheets-2164.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 4 | 30 Weeks | 4 | UL RECOGNIZED | UPPER | UNSPECIFIED | 4 | Single | 960W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 250ns | 50 ns | 82A | 30V | SILICON | ISOLATED | SWITCHING | 960W Tc | 300A | 5000 mJ | 500V | N-Channel | 13800pF @ 25V | 49m Ω @ 50A, 10V | 6.5V @ 8mA | 82A Tc | 255nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN550N055T2 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™, TrenchT2™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtn550n055t2-datasheets-1453.pdf | SOT-227-4, miniBLOC | 4 | 17 Weeks | 1 | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | not_compliant | 200A | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 55V | 550A | 45 ns | 40ns | 230 ns | 90 ns | 550A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 940W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.3m Ω @ 100A, 10V | 4V @ 250μA | 550A Tc | 595nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTR48P20P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtr48p20p-datasheets-2780.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 190W Tc | 144A | 0.093Ohm | 2500 mJ | P-Channel | 5400pF @ 25V | 93m Ω @ 24A, 10V | 4.5V @ 250μA | 30A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1N100P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1000V | 50W Tc | N-Channel | 331pF @ 25V | 15 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 15.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA12N50P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp12n50p-datasheets-2145.pdf | 500V | 12A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 27ns | 20 ns | 65 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 30A | 0.5Ohm | 600 mJ | 500V | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 1mA | 12A Tc | 29nC @ 10V | 10V | ±30V |
