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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFT23N60Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft23n60q-datasheets-4403.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 20 ns | 45 ns | 23A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 92A | 0.32Ohm | 1500 mJ | 600V | N-Channel | 3300pF @ 25V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 23A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFR58N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfr58n20-datasheets-4446.pdf | ISOPLUS247™ | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 300W Tc | 232A | 0.04Ohm | 1000 mJ | N-Channel | 3600pF @ 25V | 40m Ω @ 29A, 10V | 4V @ 4mA | 50A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXUV170N075 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3, Short Tab | 220 | 300W | Single | 300W | 175A | 5mOhm | 75V | N-Channel | 175A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR9N80Q | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 800V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH6N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n90-datasheets-7658.pdf | 900V | 6A | TO-247-3 | Lead Free | 3 | 1.8Ohm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | 260 | 3 | 1 | 35 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 40ns | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 6A | 24A | N-Channel | 2600pF @ 25V | 2 Ω @ 3A, 10V | 4.5V @ 2.5mA | 6A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFA130N10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfa130n10t-datasheets-9422.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 360W Tc | 350A | 0.0091Ohm | 750 mJ | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 1mA | 130A Tc | 104nC @ 10V | 10V | |||||||||||||||||||||||||||||||||
| IXFP36N30P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfa36n30p3-datasheets-6952.pdf | TO-220-3 | 26 Weeks | 36A | 300V | 347W Tc | N-Channel | 2040pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKP13N60C5M | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp13n60c5m-datasheets-9720.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | yes | AVALANCHE RATED | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 32W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 6.5A | 20V | SILICON | SWITCHING | TO-220AB | 0.3Ohm | 290 mJ | 600V | N-Channel | 1100pF @ 100V | 300m Ω @ 6.6A, 10V | 3.5V @ 440μA | 6.5A Tc | 30nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTA300N04T2 | IXYS | $27.26 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta300n04t2-datasheets-9952.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 300A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 900A | 0.0025Ohm | 600 mJ | 40V | N-Channel | 10700pF @ 25V | 2.5m Ω @ 500mA, 10V | 4V @ 250μA | 300A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA6N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 300W Tc | N-Channel | 2650pF @ 25V | 2.2 Ω @ 3A, 0V | 4.5V @ 250μA | 6A Tj | 95nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N110 | IXYS | $30.16 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n110-datasheets-3916.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 4.5Ohm | yes | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | R-PSSO-G2 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1100V | 150W Tc | 3A | 12A | 700 mJ | 1.1kV | N-Channel | 1350pF @ 25V | 4 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFP14N55X2 | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH340N04T4 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixtp340n04t4-datasheets-9887.pdf | TO-247-3 | 17 Weeks | yes | 340A | 40V | 480W Tc | N-Channel | 13000pF @ 25V | 1.9m Ω @ 100A, 10V | 4V @ 250μA | 340A Tc | 256nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH24N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth24n65x2-datasheets-0403.pdf | TO-247-3 | 15 Weeks | compliant | 650V | 390W Tc | N-Channel | 2060pF @ 25V | 145m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH1N100 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixth1n100-datasheets-0459.pdf | TO-247-3 | 3 | 53 Weeks | 3 | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | 19ns | 18 ns | 20 ns | 1.5A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 60W Tc | TO-247AD | 6A | 200 mJ | 1kV | N-Channel | 480pF @ 25V | 11 Ω @ 1A, 10V | 4.5V @ 25μA | 1.5A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTH60N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 60A | 300V | N-Channel | 60A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT140N10P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 100V | 600W Tc | N-Channel | 4700pF @ 25V | 11m Ω @ 70A, 10V | 5V @ 250μA | 140A Tc | 155nC @ 10V | 10V 15V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH40N50Q | IXYS | $5.83 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh40n50q-datasheets-0596.pdf | 500V | 40A | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 14 ns | 56 ns | 40A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | TO-247AD | 160A | 0.14Ohm | 2 mJ | 500V | N-Channel | 3800pF @ 25V | 140m Ω @ 500mA, 10V | 4.5V @ 4mA | 40A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFH240N15X3 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 19 Weeks | compliant | 150V | 780W Tc | N-Channel | 9580pF @ 25V | 5.4m Ω @ 120A, 10V | 4.5V @ 4mA | 240A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH12N120 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n120-datasheets-0692.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | No | 3 | Single | 500W | 1 | 25ns | 17 ns | 35 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 500W Tc | TO-247AD | 48A | 1.2kV | N-Channel | 3400pF @ 25V | 1.4 Ω @ 500mA, 10V | 5V @ 4mA | 12A Tc | 95nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTK32P60P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtk32p60p-datasheets-0724.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED | unknown | e1 | TIN/SILVER/COPPER (SN/AG/CU) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 890W Tc | 96A | P-Channel | 11100pF @ 25V | 350m Ω @ 16A, 10V | 4V @ 1mA | 32A Tc | 196nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFH18N100Q3 | IXYS | $14.82 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n100q3-datasheets-0763.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | 3 | Single | 830W | 1 | FET General Purpose Power | 37 ns | 33ns | 13 ns | 40 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 6.5V | 830W Tc | 60A | 0.66Ohm | 1kV | N-Channel | 4890pF @ 25V | 660m Ω @ 9A, 10V | 6.5V @ 4mA | 18A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTH06N220P3HV | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth06n220p3hv-datasheets-0798.pdf | TO-247-3 Variant | 24 Weeks | compliant | 2200V | 104W Tc | N-Channel | 290pF @ 25V | 80 Ω @ 300mA, 10V | 4V @ 250μA | 600mA Tc | 10.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFE44N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe44n50q-datasheets-0847.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 39A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 176A | 0.12Ohm | 2.5 mJ | 500V | N-Channel | 7000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 39A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFT150N25X3HV | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n25x3hv-datasheets-4378.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 250V | 780W Tc | N-Channel | 10400pF @ 25V | 9m Ω @ 75A, 10V | 4.5V @ 4mA | 150A Tc | 154nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTE250N10 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOT-227-4, miniBLOC | 3 | Single | 730W | 250A | 100V | 5mOhm | 100V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR64N50Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr64n50q3-datasheets-0957.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | 3 | Single | 500W | 1 | FET General Purpose Power | R-PSIP-T3 | 36 ns | 250ns | 46 ns | 45A | 30V | SILICON | ISOLATED | SWITCHING | 500W Tc | 160A | 0.094Ohm | 4000 mJ | 500V | N-Channel | 6950pF @ 25V | 95m Ω @ 32A, 10V | 6.5V @ 4mA | 45A Tc | 145nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFK44N80Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk44n80q3-datasheets-0999.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 1.25kW | 1 | FET General Purpose Power | 45 ns | 300ns | 63 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 0.19Ohm | 800V | N-Channel | 9840pF @ 25V | 190m Ω @ 22A, 10V | 6.5V @ 8mA | 44A Tc | 185nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFN64N50PD2 | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfn64n50pd2-datasheets-1034.pdf | SOT-227-4, miniBLOC | 4 | 38.000013g | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 52A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 625W Tc | 50A | 200A | 0.085Ohm | 2500 mJ | N-Channel | 11000pF @ 25V | 85m Ω @ 32A, 10V | 5V @ 8mA | 52A Tc | 186nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFN20N120 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn20n120-datasheets-1072.pdf | SOT-227-4, miniBLOC | 4 | 8 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 780W | 1 | Not Qualified | 45ns | 20 ns | 75 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 780W Tc | 80A | 0.75Ohm | 2000 mJ | 1.2kV | N-Channel | 7400pF @ 25V | 750m Ω @ 500mA, 10V | 4.5V @ 8mA | 20A Tc | 160nC @ 10V | 10V | ±30V |
