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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFR16N80P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 18 Weeks | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX140N25T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk140n25t-datasheets-4863.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 960W Tc | 380A | 0.017Ohm | 3000 mJ | N-Channel | 19000pF @ 25V | 17m Ω @ 60A, 10V | 5V @ 4mA | 140A Tc | 255nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFX200N10P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfk200n10p-datasheets-7092.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | 35ns | 90 ns | 150 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 830W Tc | 400A | 0.0075Ohm | 4000 mJ | 100V | N-Channel | 7600pF @ 25V | 7.5m Ω @ 100A, 10V | 5V @ 8mA | 200A Tc | 235nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFT13N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft13n80q-datasheets-4344.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 36ns | 19 ns | 55 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 250W Tc | 52A | 0.8Ohm | 750 mJ | 800V | N-Channel | 3250pF @ 25V | 700m Ω @ 6.5A, 10V | 4.5V @ 4mA | 13A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFR20N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr20n100p-datasheets-4372.pdf | ISOPLUS247™ | 3 | 26 Weeks | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | FET General Purpose Power | Not Qualified | 37ns | 45 ns | 56 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 230W Tc | 50A | 0.64Ohm | 500 mJ | 1kV | N-Channel | 7300pF @ 25V | 640m Ω @ 10A, 10V | 6.5V @ 1mA | 11A Tc | 126nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFX80N60P3 | IXYS | $17.55 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n60p3-datasheets-9089.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | unknown | 3 | Single | 1.3kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 48 ns | 25ns | 8 ns | 87 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 1300W Tc | 200A | 0.07Ohm | 2000 mJ | 600V | N-Channel | 13100pF @ 25V | 70m Ω @ 500mA, 10V | 5V @ 8mA | 80A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTK75N30 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtk75n30-datasheets-4442.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 25ns | 20 ns | 88 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 540W Tc | 0.042Ohm | 2500 mJ | 300V | N-Channel | 6000pF @ 25V | 42m Ω @ 500mA, 10V | 4V @ 250μA | 75A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFK80N15Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n15q-datasheets-4484.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 55ns | 20 ns | 68 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.0225Ohm | 1500 mJ | 150V | N-Channel | 4500pF @ 25V | 22.5m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| VMO550-01F | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-vmo55001f-datasheets-4575.pdf | Y3-DCB | 4 | 4 | yes | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | NOT SPECIFIED | 2.2kW | 1 | FET General Purpose Power | Not Qualified | 500ns | 200 ns | 800 ns | 590A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2200W Tc | 2360A | 0.0021Ohm | 100V | N-Channel | 50000pF @ 25V | 2.1m Ω @ 500mA, 10V | 6V @ 110mA | 590A Tc | 2000nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFN150N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn150n10-datasheets-7652.pdf | 100V | 150A | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 12mOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 60ns | 60 ns | 100 ns | 150A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | 560A | 100V | N-Channel | 9000pF @ 25V | 12m Ω @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFA20N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfq20n50p3-datasheets-3225.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 380W Tc | 40A | 0.3Ohm | 300 mJ | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 20A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFP22N65X2M | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 650V | 37W Tc | N-Channel | 2190pF @ 25V | 145m Ω @ 11A, 10V | 5V @ 1.5mA | 22A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA18N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 650V | 290W Tc | N-Channel | 1520pF @ 25V | 200m Ω @ 9A, 10V | 5V @ 1.5mA | 18A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N100D2HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta3n100d2hv-datasheets-9918.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 125W Tc | 3A | 6Ohm | N-Channel | 1020pF @ 25V | 6 Ω @ 1.5A, 0V | 4.5V @ 250μA | 3A Tj | 37.5nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTA60N20T | IXYS |
Min: 1 Mult: 1 |
download | Trench™ | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta60n20t-datasheets-0055.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 175°C | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 500W Tc | TO-263AA | 150A | 0.04Ohm | 700 mJ | N-Channel | 4530pF @ 25V | 40m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTQ14N60P | IXYS | $0.90 |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta14n60p-datasheets-9417.pdf | 600V | 14A | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 27ns | 26 ns | 70 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | P-CHANNEL | 300W Tc | 42A | 0.55Ohm | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 250μA | 14A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFA110N15T2 | IXYS | $5.23 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 480W Tc | 800 mJ | N-Channel | 8600pF @ 25V | 13m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTQ54N30T | IXYS | $18.77 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | TO-3P | 54A | 300V | N-Channel | 54A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ14N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft14n80p-datasheets-3875.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 62 ns | 14A | SILICON | DRAIN | SWITCHING | 400W Tc | 0.72Ohm | 500 mJ | 800V | N-Channel | 3900pF @ 25V | 720m Ω @ 500mA, 10V | 5.5V @ 4mA | 14A Tc | 61nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTP32N65XM | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtp32n65xm-datasheets-0454.pdf | TO-220-3 | 15 Weeks | 14A | 650V | 78W Tc | N-Channel | 2206pF @ 25V | 135m Ω @ 16A, 10V | 5.5V @ 250μA | 14A Tc | 54nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH120N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 120A | 150V | N-Channel | 120A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH130N15T | IXYS | $2.11 |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtq130n15t-datasheets-0505.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 750W Tc | TO-247AD | 0.012Ohm | 1200 mJ | N-Channel | 9800pF @ 25V | 12m Ω @ 65A, 10V | 4.5V @ 1mA | 130A Tc | 113nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTQ60N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 60A | 300V | N-Channel | 60A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH12N90 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth12n90-datasheets-0640.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 63 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 48A | 0.9Ohm | 900V | N-Channel | 4500pF @ 25V | 900m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXKT70N60C5-TRL | IXYS |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | TO-268 | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH36N55Q2 | IXYS | $7.11 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfh36n55q2-datasheets-0721.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 13ns | 8 ns | 42 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 560W Tc | TO-247AD | 144A | 0.16Ohm | 2500 mJ | 550V | N-Channel | 4100pF @ 25V | 180m Ω @ 500mA, 10V | 5V @ 4mA | 36A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXKR47N60C5 | IXYS | $20.88 |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkr47n60c5-datasheets-0758.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | FET General Purpose Power | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 0.045Ohm | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 47A Tc | 190nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFX170N20P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n20p-datasheets-0736.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 170A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1250W Tc | 400A | 0.014Ohm | 4000 mJ | N-Channel | 11400pF @ 25V | 14m Ω @ 500mA, 10V | 5V @ 1mA | 170A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTK90N15 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixtk90n15-datasheets-0836.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 390W | 1 | FET General Purpose Power | Not Qualified | 30ns | 17 ns | 115 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 390W Tc | 0.016Ohm | 1500 mJ | 150V | N-Channel | 6400pF @ 25V | 16m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFK80N65X2 | IXYS | $18.17 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n65x2-datasheets-1959.pdf | TO-264-3, TO-264AA | 19 Weeks | unknown | 80A | 650V | 890W Tc | N-Channel | 8245pF @ 25V | 40m Ω @ 40A, 10V | 5.5V @ 4mA | 80A Tc | 143nC @ 10V | 10V | ±30V |
