IXYS(5222)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Technology Operating Mode RoHS Status Published Datasheet Voltage - Rated DC Current Rating Package / Case Length Height Width Lead Free Number of Terminations Factory Lead Time Weight REACH SVHC Resistance Number of Pins Pbfree Code ECCN Code Additional Feature Radiation Hardening Reach Compliance Code JESD-609 Code Terminal Finish Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Pin Count Number of Channels Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements Subcategory Qualification Status JESD-30 Code Turn On Delay Time Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Transistor Element Material Configuration Case Connection Transistor Application Drain to Source Voltage (Vdss) DS Breakdown Voltage-Min Threshold Voltage Power Dissipation-Max JEDEC-95 Code Drain Current-Max (Abs) (ID) Pulsed Drain Current-Max (IDM) Drain-source On Resistance-Max Drain to Source Resistance Avalanche Energy Rating (Eas) Drain to Source Breakdown Voltage FET Type Input Capacitance (Ciss) (Max) @ Vds Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs FET Feature Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXFT23N60Q IXFT23N60Q IXYS
RFQ

Min: 1

Mult: 1

download HiPerFET™ Surface Mount Surface Mount -55°C~150°C TJ Bulk 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2003 https://pdf.utmel.com/r/datasheets/ixys-ixft23n60q-datasheets-4403.pdf TO-268-3, D3Pak (2 Leads + Tab), TO-268AA 2 yes not_compliant e3 Matte Tin (Sn) GULL WING NOT SPECIFIED 4 Single NOT SPECIFIED 400W 1 Not Qualified R-PSSO-G2 20ns 20 ns 45 ns 23A 30V SILICON DRAIN SWITCHING 400W Tc 92A 0.32Ohm 1500 mJ 600V N-Channel 3300pF @ 25V 320m Ω @ 500mA, 10V 4.5V @ 4mA 23A Tc 90nC @ 10V 10V ±30V
IXFR58N20 IXFR58N20 IXYS
RFQ

Min: 1

Mult: 1

download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2003 https://pdf.utmel.com/r/datasheets/ixys-ixfr58n20-datasheets-4446.pdf ISOPLUS247™ 3 26 Weeks yes EAR99 AVALANCHE RATED e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED 3 NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PSIP-T3 50A SILICON SINGLE WITH BUILT-IN DIODE ISOLATED SWITCHING 200V 200V 300W Tc 232A 0.04Ohm 1000 mJ N-Channel 3600pF @ 25V 40m Ω @ 29A, 10V 4V @ 4mA 50A Tc 140nC @ 10V 10V ±20V
IXUV170N075 IXUV170N075 IXYS
RFQ

Min: 1

Mult: 1

download Through Hole Through Hole Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant 2010 TO-220-3, Short Tab 220 300W Single 300W 175A 5mOhm 75V N-Channel 175A Tc
IXFR9N80Q IXFR9N80Q IXYS
RFQ

Min: 1

Mult: 1

download Through Hole Through Hole Bulk 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant ISOPLUS247™ 800V N-Channel
IXFH6N90 IXFH6N90 IXYS
RFQ

Min: 1

Mult: 1

download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube Not Applicable MOSFET (Metal Oxide) ENHANCEMENT MODE RoHS Compliant 2000 https://pdf.utmel.com/r/datasheets/ixys-ixfh6n90-datasheets-7658.pdf 900V 6A TO-247-3 Lead Free 3 1.8Ohm yes AVALANCHE RATED e3 Matte Tin (Sn) SINGLE 260 3 1 35 1 FET General Purpose Power Not Qualified R-PSFM-T3 40ns 6A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 300W Tc 6A 24A N-Channel 2600pF @ 25V 2 Ω @ 3A, 10V 4.5V @ 2.5mA 6A Tc 130nC @ 10V 10V ±20V
IXFA130N10T IXFA130N10T IXYS
RFQ

Min: 1

Mult: 1

download TrenchMV™ Surface Mount Surface Mount -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-ixfa130n10t-datasheets-9422.pdf TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 2 yes EAR99 AVALANCHE RATED, ULTRA-LOW RESISTANCE not_compliant e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED 4 NOT SPECIFIED 1 FET General Purpose Power Not Qualified R-PSSO-G2 130A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 100V 100V 360W Tc 350A 0.0091Ohm 750 mJ N-Channel 5080pF @ 25V 9.1m Ω @ 25A, 10V 4.5V @ 1mA 130A Tc 104nC @ 10V 10V
IXFP36N30P3 IXFP36N30P3 IXYS
RFQ

Min: 1

Mult: 1

download HiPerFET™, Polar3™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant 2014 https://pdf.utmel.com/r/datasheets/ixys-ixfa36n30p3-datasheets-6952.pdf TO-220-3 26 Weeks 36A 300V 347W Tc N-Channel 2040pF @ 25V 110m Ω @ 18A, 10V 4.5V @ 250μA 36A Tc 30nC @ 10V 10V ±20V
IXKP13N60C5M IXKP13N60C5M IXYS
RFQ

Min: 1

Mult: 1

download CoolMOS™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2009 https://pdf.utmel.com/r/datasheets/ixys-ixkp13n60c5m-datasheets-9720.pdf TO-220-3 Full Pack, Isolated Tab 3 yes AVALANCHE RATED e3 PURE TIN NOT SPECIFIED 3 Single NOT SPECIFIED 32W 1 FET General Purpose Power Not Qualified R-PSFM-T3 6.5A 20V SILICON SWITCHING TO-220AB 0.3Ohm 290 mJ 600V N-Channel 1100pF @ 100V 300m Ω @ 6.6A, 10V 3.5V @ 440μA 6.5A Tc 30nC @ 10V Super Junction 10V ±20V
IXTA300N04T2 IXTA300N04T2 IXYS $27.26
RFQ

Min: 1

Mult: 1

download TrenchT2™ Surface Mount Surface Mount -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-ixta300n04t2-datasheets-9952.pdf TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 2 28 Weeks yes EAR99 AVALANCHE RATED not_compliant e3 Matte Tin (Sn) GULL WING NOT SPECIFIED 4 Single NOT SPECIFIED 480W 1 FET General Purpose Power Not Qualified R-PSSO-G2 300A 20V SILICON DRAIN SWITCHING 480W Tc 900A 0.0025Ohm 600 mJ 40V N-Channel 10700pF @ 25V 2.5m Ω @ 500mA, 10V 4V @ 250μA 300A Tc 145nC @ 10V 10V ±20V
IXTA6N100D2-TRL IXTA6N100D2-TRL IXYS
RFQ

Min: 1

Mult: 1

download Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 24 Weeks 1000V 300W Tc N-Channel 2650pF @ 25V 2.2 Ω @ 3A, 0V 4.5V @ 250μA 6A Tj 95nC @ 5V Depletion Mode 0V ±20V
IXTA3N110 IXTA3N110 IXYS $30.16
RFQ

Min: 1

Mult: 1

download Surface Mount Surface Mount -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2001 https://pdf.utmel.com/r/datasheets/ixys-ixtp3n110-datasheets-3916.pdf TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Lead Free 2 28 Weeks 4.5Ohm yes AVALANCHE RATED unknown e3 Matte Tin (Sn) GULL WING NOT SPECIFIED 4 Single NOT SPECIFIED 150W 1 Not Qualified R-PSSO-G2 15ns 18 ns 32 ns 3A 20V SILICON DRAIN SWITCHING 1100V 150W Tc 3A 12A 700 mJ 1.1kV N-Channel 1350pF @ 25V 4 Ω @ 1.5A, 10V 5V @ 250μA 3A Tc 42nC @ 10V 10V ±20V
IXFP14N55X2 IXFP14N55X2 IXYS
RFQ

Min: 1

Mult: 1

download 23 Weeks
IXTH340N04T4 IXTH340N04T4 IXYS
RFQ

Min: 1

Mult: 1

download TrenchT4™ Through Hole Through Hole -55°C~175°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant 2016 https://pdf.utmel.com/r/datasheets/ixys-ixtp340n04t4-datasheets-9887.pdf TO-247-3 17 Weeks yes 340A 40V 480W Tc N-Channel 13000pF @ 25V 1.9m Ω @ 100A, 10V 4V @ 250μA 340A Tc 256nC @ 10V 10V ±15V
IXTH24N65X2 IXTH24N65X2 IXYS
RFQ

Min: 1

Mult: 1

download Through Hole -55°C~150°C TJ Tube MOSFET (Metal Oxide) https://pdf.utmel.com/r/datasheets/ixys-ixth24n65x2-datasheets-0403.pdf TO-247-3 15 Weeks compliant 650V 390W Tc N-Channel 2060pF @ 25V 145m Ω @ 12A, 10V 5V @ 250μA 24A Tc 36nC @ 10V 10V ±30V
IXTH1N100 IXTH1N100 IXYS
RFQ

Min: 1

Mult: 1

download Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2002 https://pdf.utmel.com/r/datasheets/ixys-ixth1n100-datasheets-0459.pdf TO-247-3 3 53 Weeks 3 yes NOT SPECIFIED Single NOT SPECIFIED 60W 1 FET General Purpose Power Not Qualified 19ns 18 ns 20 ns 1.5A 20V SILICON DRAIN SWITCHING 1000V 60W Tc TO-247AD 6A 200 mJ 1kV N-Channel 480pF @ 25V 11 Ω @ 1A, 10V 4.5V @ 25μA 1.5A Tc 23nC @ 10V 10V ±20V
IXTH60N30T IXTH60N30T IXYS
RFQ

Min: 1

Mult: 1

download Through Hole Through Hole Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant TO-247-3 60A 300V N-Channel 60A Tc
IXTT140N10P-TRL IXTT140N10P-TRL IXYS
RFQ

Min: 1

Mult: 1

download Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ROHS3 Compliant TO-268-3, D3Pak (2 Leads + Tab), TO-268AA 24 Weeks 100V 600W Tc N-Channel 4700pF @ 25V 11m Ω @ 70A, 10V 5V @ 250μA 140A Tc 155nC @ 10V 10V 15V ±20V
IXFH40N50Q IXFH40N50Q IXYS $5.83
RFQ

Min: 1

Mult: 1

download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2003 https://pdf.utmel.com/r/datasheets/ixys-ixfh40n50q-datasheets-0596.pdf 500V 40A TO-247-3 Lead Free 3 3 yes AVALANCHE RATED NOT SPECIFIED 3 Single NOT SPECIFIED 500W 1 Not Qualified 20ns 14 ns 56 ns 40A 30V SILICON DRAIN SWITCHING 500W Tc TO-247AD 160A 0.14Ohm 2 mJ 500V N-Channel 3800pF @ 25V 140m Ω @ 500mA, 10V 4.5V @ 4mA 40A Tc 130nC @ 10V 10V ±30V
IXFH240N15X3 IXFH240N15X3 IXYS
RFQ

Min: 1

Mult: 1

download Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) TO-247-3 19 Weeks compliant 150V 780W Tc N-Channel 9580pF @ 25V 5.4m Ω @ 120A, 10V 4.5V @ 4mA 240A Tc 150nC @ 10V 10V ±20V
IXFH12N120 IXFH12N120 IXYS
RFQ

Min: 1

Mult: 1

download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2005 https://pdf.utmel.com/r/datasheets/ixys-ixfh12n120-datasheets-0692.pdf TO-247-3 Lead Free 3 3 yes AVALANCHE RATED No 3 Single 500W 1 25ns 17 ns 35 ns 12A 30V SILICON DRAIN SWITCHING 1200V 500W Tc TO-247AD 48A 1.2kV N-Channel 3400pF @ 25V 1.4 Ω @ 500mA, 10V 5V @ 4mA 12A Tc 95nC @ 10V 10V ±30V
IXTK32P60P IXTK32P60P IXYS
RFQ

Min: 1

Mult: 1

download PolarP™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2008 https://pdf.utmel.com/r/datasheets/ixys-ixtk32p60p-datasheets-0724.pdf TO-264-3, TO-264AA 3 28 Weeks 3 yes AVALANCHE RATED unknown e1 TIN/SILVER/COPPER (SN/AG/CU) SINGLE NOT SPECIFIED 3 NOT SPECIFIED 1 Other Transistors Not Qualified 32A SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 600V 600V 890W Tc 96A P-Channel 11100pF @ 25V 350m Ω @ 16A, 10V 4V @ 1mA 32A Tc 196nC @ 10V 10V ±20V
IXFH18N100Q3 IXFH18N100Q3 IXYS $14.82
RFQ

Min: 1

Mult: 1

download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2009 https://pdf.utmel.com/r/datasheets/ixys-ixfh18n100q3-datasheets-0763.pdf TO-247-3 16.26mm 16.26mm 5.3mm Lead Free 3 30 Weeks No SVHC 3 EAR99 AVALANCHE RATED No 3 Single 830W 1 FET General Purpose Power 37 ns 33ns 13 ns 40 ns 18A 30V SILICON DRAIN SWITCHING 1000V 6.5V 830W Tc 60A 0.66Ohm 1kV N-Channel 4890pF @ 25V 660m Ω @ 9A, 10V 6.5V @ 4mA 18A Tc 90nC @ 10V 10V ±30V
IXTH06N220P3HV IXTH06N220P3HV IXYS
RFQ

Min: 1

Mult: 1

download Through Hole -55°C~150°C TJ Tube MOSFET (Metal Oxide) https://pdf.utmel.com/r/datasheets/ixys-ixth06n220p3hv-datasheets-0798.pdf TO-247-3 Variant 24 Weeks compliant 2200V 104W Tc N-Channel 290pF @ 25V 80 Ω @ 300mA, 10V 4V @ 250μA 600mA Tc 10.4nC @ 10V 10V ±20V
IXFE44N50Q IXFE44N50Q IXYS
RFQ

Min: 1

Mult: 1

download HiPerFET™ Chassis Mount Chassis Mount -40°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2003 https://pdf.utmel.com/r/datasheets/ixys-ixfe44n50q-datasheets-0847.pdf SOT-227-4, miniBLOC Lead Free 4 4 yes AVALANCHE RATED UPPER UNSPECIFIED NOT SPECIFIED 4 Single NOT SPECIFIED 400W 1 FET General Purpose Power Not Qualified 22ns 10 ns 75 ns 39A 20V SILICON ISOLATED SWITCHING 400W Tc 176A 0.12Ohm 2.5 mJ 500V N-Channel 7000pF @ 25V 120m Ω @ 22A, 10V 4V @ 4mA 39A Tc 190nC @ 10V 10V ±20V
IXFT150N25X3HV IXFT150N25X3HV IXYS
RFQ

Min: 1

Mult: 1

download HiPerFET™ Surface Mount -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant https://pdf.utmel.com/r/datasheets/ixys-ixfh150n25x3hv-datasheets-4378.pdf TO-268-3, D3Pak (2 Leads + Tab), TO-268AA 19 Weeks 250V 780W Tc N-Channel 10400pF @ 25V 9m Ω @ 75A, 10V 4.5V @ 4mA 150A Tc 154nC @ 10V 10V ±20V
IXTE250N10 IXTE250N10 IXYS
RFQ

Min: 1

Mult: 1

download Chassis Mount Chassis Mount Tube 1 (Unlimited) MOSFET (Metal Oxide) ROHS3 Compliant SOT-227-4, miniBLOC 3 Single 730W 250A 100V 5mOhm 100V N-Channel
IXFR64N50Q3 IXFR64N50Q3 IXYS
RFQ

Min: 1

Mult: 1

download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2011 https://pdf.utmel.com/r/datasheets/ixys-ixfr64n50q3-datasheets-0957.pdf TO-247-3 16.13mm 21.34mm 5.21mm 3 30 Weeks 247 AVALANCHE RATED, UL RECOGNIZED 3 Single 500W 1 FET General Purpose Power R-PSIP-T3 36 ns 250ns 46 ns 45A 30V SILICON ISOLATED SWITCHING 500W Tc 160A 0.094Ohm 4000 mJ 500V N-Channel 6950pF @ 25V 95m Ω @ 32A, 10V 6.5V @ 4mA 45A Tc 145nC @ 10V 10V ±30V
IXFK44N80Q3 IXFK44N80Q3 IXYS
RFQ

Min: 1

Mult: 1

download HiPerFET™ Through Hole Through Hole -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2012 https://pdf.utmel.com/r/datasheets/ixys-ixfk44n80q3-datasheets-0999.pdf TO-264-3, TO-264AA 19.96mm 26.16mm 5.13mm 3 30 Weeks 3 AVALANCHE RATED unknown 3 Single 1.25kW 1 FET General Purpose Power 45 ns 300ns 63 ns 44A 30V SILICON DRAIN SWITCHING 1250W Tc 0.19Ohm 800V N-Channel 9840pF @ 25V 190m Ω @ 22A, 10V 6.5V @ 8mA 44A Tc 185nC @ 10V 10V ±30V
IXFN64N50PD2 IXFN64N50PD2 IXYS
RFQ

Min: 1

Mult: 1

download PolarHV™ Chassis Mount Chassis Mount -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2006 https://pdf.utmel.com/r/datasheets/ixys-ixfn64n50pd2-datasheets-1034.pdf SOT-227-4, miniBLOC 4 38.000013g 4 yes AVALANCHE RATED, UL RECOGNIZED Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED 4 NOT SPECIFIED 1 FET General Purpose Power Not Qualified 52A SILICON SINGLE WITH BUILT-IN DIODE ISOLATED SWITCHING 500V 500V 625W Tc 50A 200A 0.085Ohm 2500 mJ N-Channel 11000pF @ 25V 85m Ω @ 32A, 10V 5V @ 8mA 52A Tc 186nC @ 10V 10V ±30V
IXFN20N120 IXFN20N120 IXYS
RFQ

Min: 1

Mult: 1

download HiPerFET™ Chassis Mount Chassis Mount -55°C~150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) ENHANCEMENT MODE ROHS3 Compliant 2003 https://pdf.utmel.com/r/datasheets/ixys-ixfn20n120-datasheets-1072.pdf SOT-227-4, miniBLOC 4 8 Weeks 4 yes AVALANCHE RATED Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED 4 NOT SPECIFIED 780W 1 Not Qualified 45ns 20 ns 75 ns 20A 30V SILICON SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 1200V 780W Tc 80A 0.75Ohm 2000 mJ 1.2kV N-Channel 7400pF @ 25V 750m Ω @ 500mA, 10V 4.5V @ 8mA 20A Tc 160nC @ 10V 10V ±30V

In Stock

Please send RFQ , we will respond immediately.