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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Forward Current | Forward Voltage | Turn On Delay Time | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | FET Technology | Speed | Voltage - Isolation | Diode Element Material | Power Dissipation-Max | Peak Reverse Current | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Reverse Voltage (DC) | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Voltage - Peak Reverse (Max) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Current - Average Rectified (Io) | Diode Configuration | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Capacitance - Input |
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| IXFX32N50Q | IXYS | $16.32 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n50q-datasheets-8700.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 42ns | 20 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 128A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 160m Ω @ 16A, 10V | 4.5V @ 4mA | 32A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTC102N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS220™ | 250V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMO1600-02P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-vmo160002p-datasheets-9161.pdf | Y3-Li | 4 | 4 | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 1.9kA | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 1900A | 0.00165Ohm | N-Channel | 1.7m Ω @ 1600A, 10V | 5V @ 5mA | 1900A Tc | 2900nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTC36P15P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtr36p15p-datasheets-4025.pdf | ISOPLUS220™ | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | 150W Tc | 100A | 0.12Ohm | 1500 mJ | P-Channel | 2950pF @ 25V | 120m Ω @ 18A, 10V | 5V @ 250μA | 22A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXCP01N90E | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixcp01n90e-datasheets-4320.pdf | TO-220-3 | 3 | 3 | yes | e0 | Tin/Lead (Sn/Pb) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 61 ns | 250mA | SILICON | DRAIN | SWITCHING | 40W Tc | TO-220AB | 175A | 0.08Ohm | 900V | N-Channel | 133pF @ 25V | 80 Ω @ 50mA, 10V | 5V @ 25μA | 250mA Tc | 7.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK26N60Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixfx26n60q-datasheets-7450.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 32ns | 16 ns | 80 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 104A | 0.25Ohm | 1500 mJ | 600V | N-Channel | 5100pF @ 25V | 250m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP3N50PM | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp3n50pm-datasheets-4507.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 36W | 1 | Not Qualified | R-PSFM-T3 | 28ns | 29 ns | 63 ns | 2.7A | 30V | SILICON | ISOLATED | SWITCHING | 36W Tc | TO-220AB | 8A | 2Ohm | 100 mJ | 500V | N-Channel | 409pF @ 25V | 2 Ω @ 1.8A, 10V | 5.5V @ 250μA | 2.7A Tc | 9.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTF03N400 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtf03n400-datasheets-3089.pdf | i4-Pac™-5 (3 Leads) | 3 | yes | EAR99 | UL RECOGNIZED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 70W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 16ns | 58 ns | 86 ns | 300mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4000V | 70W Tc | 0.3A | 0.8A | 4kV | N-Channel | 435pF @ 25V | 300 Ω @ 150mA, 10V | 4V @ 250μA | 300mA Tc | 16.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFJ80N10Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH1837 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD23N60Q-72 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | Die | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 0.35Ohm | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM1712 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM50N20 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth50n20-datasheets-4268.pdf | TO-204AE | 2 | yes | EAR99 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 300W Tc | 50A | 200A | 0.045Ohm | N-Channel | 4600pF @ 25V | 45m Ω @ 25A, 10V | 4V @ 250μA | 50A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EV6R11S3 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ev6r11s6-datasheets-5884.pdf | Yes | Half H-Bridge Driver (External FET) | IX6R11S3 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVLB002 | IXYS |
Min: 1 Mult: 1 |
download | Opto/Lighting | Box | 1 (Unlimited) | RoHS Compliant | 2012 | Yes | Ballast Control | IXI859, IXTP3N50P, IXD611S | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP6N50D2 | IXYS | $6.21 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixta6n50d2-datasheets-1686.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | UL RECOGNIZED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 300W Tc | TO-220AB | 0.5Ohm | N-Channel | 2800pF @ 25V | 500m Ω @ 3A, 0V | 6A Tc | 96nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX100N65X2 | IXYS | $74.95 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfx100n65x2-datasheets-8750.pdf | TO-247-3 | 19 Weeks | unknown | 100A | 650V | 1040W Tc | N-Channel | 11300pF @ 25V | 30m Ω @ 50A, 10V | 5.5V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP130N10T | IXYS | $1.66 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n10t-datasheets-0932.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED, ULTRA-LOW RESISTANCE | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 47ns | 28 ns | 44 ns | 130A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 0.0091Ohm | 500 mJ | 100V | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 250μA | 130A Tc | 104nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ72N30X3 | IXYS | $10.44 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh72n30x3-datasheets-4703.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN220N20X3 | IXYS | $32.16 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/ixys-ixfn220n20x3-datasheets-2491.pdf | SOT-227-4, miniBLOC | 19 Weeks | 200V | 390W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 160A Tc | 204nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA38N30X3 | IXYS | $4.95 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp38n30x3-datasheets-4130.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 300V | 240W Tc | N-Channel | 2240pF @ 25V | 50m Ω @ 19A, 10V | 4.5V @ 1mA | 38A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK5N250 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtx5n250-datasheets-4542.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2500V | 2500V | 960W Tc | 5A | 20A | 2500 mJ | N-Channel | 8560pF @ 25V | 8.8 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MKE38RK600DFELB | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | SMD/SMT | 9 | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | DUAL | GULL WING | 9 | 1 | FET General Purpose Power | R-PDSO-G9 | 50A | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 1950 mJ | 45 mΩ | 6.8nF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP29-06AS-TUBE | IXYS | $3.02 |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | 35 ns | 600V | 30A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DNA30EM2200PZ | IXYS | $4.35 |
Min: 1 Mult: 1 |
Surface Mount | Tape & Reel (TR) | 150°C | -55°C | RoHS Compliant | TO-263-3 | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 30A | 1.26V | 370A | ANODE | HIGH VOLTAGE | SILICON | 210W | 40μA | TO-263AB | RECTIFIER DIODE | 2.2kV | 30A | 1 | 2.2kV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXIDM1403_1515_M | IXYS |
Min: 1 Mult: 1 |
download | IGBT | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | /files/ixys-ixidm14011505o-datasheets-6112.pdf | Module | 30A | 15V | Half Bridge | 4000VDC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VUI72-16NOXT | IXYS | $42.69 |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/ixys-vui7216noxt-datasheets-4067.pdf | V1A-PAK | 12 | HIGH RELIABILITY, UL RECOGNIZED | 8541.10.00.80 | UPPER | UNSPECIFIED | 6 | Bridge Rectifier Diodes | Not Qualified | R-XUFM-X12 | BRIDGE, 6 ELEMENTS WITH BUILT-IN IGBT AND THERMISTOR | ISOLATED | SILICON | Three Phase | 530A | 3 | 40A | 1.6kV | 40μA @ 1600V | 1.1V @ 25A | 75A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXRH40N120 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | Not Applicable | Standard | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixrh40n120-datasheets-4774.pdf | TO-247-3 | 3 | 6.500007g | 3 | yes | 300W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 2.1μs | 1.2kV | 2.7V | 220 ns | 1.2kV | 55A | 1200V | 350 ns | 600V, 35A, 15 Ω, 15V | 2.7V @ 15V, 30A | NPT | 90nC | 3mJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGT10N170A | IXYS | $8.76 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixgh10n170a-datasheets-0529.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 4.500005g | yes | No | e3 | Matte Tin (Sn) | 140W | GULL WING | IXG*10N170 | 4 | Single | 140W | 1 | R-PSSO-G2 | 46 ns | 190 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 1.7kV | 4.5V | 107 ns | 1.7kV | 10A | 1700V | 240 ns | 850V, 10A, 22 Ω, 15V | 6V @ 15V, 5A | NPT | 29nC | 20A | 46ns/190ns | 380μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDD220-18N1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-mdd22008n1-datasheets-4523.pdf | Y2-DCB | 3 | 18 Weeks | 3 | yes | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | MDD220 | NOT SPECIFIED | 2 | Not Qualified | 1.4V | ISOLATED | HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9kA | 1.8kV | Standard | 1.8kV | 270A | 8000A | 1 | 1800V | 40mA @ 1800V | 1.4V @ 600A | 1 Pair Series Connection |
