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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTY1R6N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r6n50p-datasheets-5758.pdf | 500V | 1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 43W | 1 | Not Qualified | R-PSSO-G2 | 26ns | 23 ns | 45 ns | 1.6A | 30V | SILICON | DRAIN | SWITCHING | 43W Tc | TO-252AA | 2.5A | 75 mJ | 500V | N-Channel | 140pF @ 25V | 6.5 Ω @ 500mA, 10V | 5.5V @ 25μA | 1.6A Tc | 3.9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFV36N50P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh36n50p-datasheets-4795.pdf | 500V | 36A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 90A | 0.17Ohm | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 4mA | 36A Tc | 93nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTP1R4N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r4n60p-datasheets-5843.pdf | 600V | 1.4A | TO-220-3 | Lead Free | 3 | 2 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | R-PSFM-T3 | 16ns | 16 ns | 25 ns | 1.4A | 30V | SILICON | DRAIN | SWITCHING | 50W Tc | TO-220AB | 9Ohm | 75 mJ | 600V | N-Channel | 140pF @ 25V | 9 Ω @ 700mA, 10V | 5.5V @ 25μA | 1.4A Tc | 5.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTA5N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtu5n50p-datasheets-2981.pdf | 500V | 5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 89W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 24 ns | 65 ns | 4.8A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | TO-263AA | 5A | 10A | 250 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.4A, 10V | 5.5V @ 50μA | 4.8A Tc | 12.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFT16N90Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfk16n90q-datasheets-0642.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 14 ns | 56 ns | 16A | 20V | SILICON | DRAIN | 360W Tc | 64A | 0.65Ohm | 1500 mJ | 900V | N-Channel | 4000pF @ 25V | 650m Ω @ 8A, 10V | 5V @ 4mA | 16A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFV110N10PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh110n10p-datasheets-5469.pdf | PLUS-220SMD | 2 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 25 ns | 65 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 5V | 480W Tc | 250A | 0.015Ohm | 1000 mJ | 100V | N-Channel | 3550pF @ 25V | 15m Ω @ 500mA, 10V | 5V @ 4mA | 110A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTA110N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp110n055t-datasheets-4382.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 24 ns | 40 ns | 110A | SILICON | DRAIN | SWITCHING | 230W Tc | 300A | 0.007Ohm | 750 mJ | 55V | N-Channel | 3080pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 100μA | 110A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA200N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n075t-datasheets-7507.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSSO-G2 | 57ns | 52 ns | 54 ns | 200A | SILICON | DRAIN | SWITCHING | 430W Tc | 540A | 0.005Ohm | 750 mJ | 75V | N-Channel | 6800pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTC180N085T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtc180n085t-datasheets-7538.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | 70ns | 65 ns | 55 ns | 110A | 20V | SILICON | ISOLATED | SWITCHING | 150W Tc | 480A | 0.0061Ohm | 1000 mJ | 85V | N-Channel | 8800pF @ 25V | 6.1m Ω @ 25A, 10V | 4V @ 250μA | 110A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTH88N15 | IXYS | $3.20 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtt88n15-datasheets-4249.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 33ns | 18 ns | 80 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 0.022Ohm | 1500 mJ | 150V | N-Channel | 4000pF @ 25V | 22m Ω @ 44A, 10V | 4V @ 250μA | 88A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTQ180N055T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-3P-3, SC-65-3 | 3 | 4mOhm | yes | EAR99 | e3 | PURE TIN | 360W | SINGLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 600A | 450 mJ | N-Channel | 5800pF @ 25V | 4m Ω @ 50A, 10V | 4V @ 1mA | 180A Tc | 160nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTT1N100 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixth1n100-datasheets-0459.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 19ns | 18 ns | 20 ns | 1.5A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 60W Tc | 6A | 200 mJ | 1kV | N-Channel | 480pF @ 25V | 11 Ω @ 1A, 10V | 4.5V @ 25μA | 1.5A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTV280N055TS | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtv280n055ts-datasheets-7688.pdf | PLUS-220SMD | 2 | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | R-PSSO-G2 | 55ns | 37 ns | 49 ns | 280A | SILICON | DRAIN | SWITCHING | 550W Tc | 600A | 1500 mJ | 55V | N-Channel | 9800pF @ 25V | 3.2m Ω @ 50A, 10V | 4V @ 250μA | 280A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTT50P085 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 300W Tc | 200A | 0.055Ohm | P-Channel | 4200pF @ 25V | 55m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFX180N07 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx180n07-datasheets-5254.pdf | 70V | 180A | TO-247-3 | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 568W Tc | 720A | 0.006Ohm | 70V | N-Channel | 9400pF @ 25V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXUN350N10 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixun350n10-datasheets-7056.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 2.5MOhm | 4 | EAR99 | HIGH RELIABILITY | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 965W | 1 | Not Qualified | 175ns | 150 ns | 650 ns | 350A | 20V | SILICON | ISOLATED | SWITCHING | 830W Tc | 5000 mJ | 100V | N-Channel | 27000pF @ 25V | 2.5m Ω @ 175A, 10V | 4V @ 3mA | 350A Tc | 640nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFC13N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfc13n50-datasheets-8500.pdf | ISOPLUS220™ | 3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 140W | 1 | Not Qualified | 27ns | 32 ns | 76 ns | 12A | 20V | SILICON | ISOLATED | SWITCHING | 140W Tc | 48A | 0.4Ohm | 500V | N-Channel | 2800pF @ 25V | 400m Ω @ 6.5A, 10V | 4V @ 2.5mA | 12A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFK180N085 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk180n085-datasheets-8542.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 720A | 0.007Ohm | 85V | N-Channel | 9100pF @ 25V | 7m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFN170N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n10-datasheets-8585.pdf | SOT-227-4, miniBLOC | 4 | 8 Weeks | No SVHC | 10mOhm | 3 | yes | EAR99 | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 90ns | 79 ns | 158 ns | 170A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 600W Tc | 680A | 100V | N-Channel | 10300pF @ 25V | 4 V | 10m Ω @ 500mA, 10V | 4V @ 8mA | 170A Tc | 515nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFR180N06 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr180n06-datasheets-8674.pdf | ISOPLUS247™ | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 100ns | 55 ns | 130 ns | 180A | 20V | SILICON | ISOLATED | SWITCHING | 560W Tc | 720A | 0.005Ohm | 60V | N-Channel | 7650pF @ 25V | 5m Ω @ 90A, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTY06N120P | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 90A | 1200V | N-Channel | 90A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTC102N20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS220™ | 200V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP260 | IXYS | $0.89 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-irfp260-datasheets-9268.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 280W | 1 | Not Qualified | 30ns | 28 ns | 90 ns | 46A | 20V | SILICON | DRAIN | SWITCHING | 280W Tc | TO-247AD | 184A | 0.055Ohm | 200V | N-Channel | 3900pF @ 25V | 55m Ω @ 28A, 10V | 4V @ 250μA | 46A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFN150N15 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn150n15-datasheets-4162.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.07mm | Lead Free | 4 | 44g | No SVHC | 12.5mOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PUFM-X4 | 2.5kV | 50 ns | 60ns | 45 ns | 110 ns | 150A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600W Tc | 600A | 150V | N-Channel | 9100pF @ 25V | 4 V | 12.5m Ω @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXFH21N50Q | IXYS | $16.17 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixft21n50q-datasheets-7416.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 250MOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 280W | 1 | Not Qualified | 28ns | 12 ns | 51 ns | 21A | 30V | SILICON | DRAIN | SWITCHING | 280W Tc | 84A | 1500 mJ | 500V | N-Channel | 3000pF @ 25V | 250m Ω @ 10.5A, 10V | 4.5V @ 4mA | 21A Tc | 84nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFK120N25 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx120n25-datasheets-0756.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 38ns | 35 ns | 175 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 480A | 0.022Ohm | 250V | N-Channel | 9400pF @ 25V | 22m Ω @ 500mA, 10V | 4V @ 8mA | 120A Tc | 400nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFK66N50Q2 | IXYS | $176.53 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx66n50q2-datasheets-7474.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 32 ns | 16ns | 10 ns | 60 ns | 66A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 264A | 0.08Ohm | 4000 mJ | 500V | N-Channel | 8400pF @ 25V | 80m Ω @ 500mA, 10V | 4.5V @ 8mA | 66A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| MKE11R600DCGFC | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-mke11r600dcgfc-datasheets-8341.pdf | ISOPLUSi5-Pak™ | 5 | 6.500007g | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | 5 | Single | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T5 | 6ns | 4 ns | 75 ns | 15A | 20V | SILICON | ISOLATED | SWITCHING | 0.165Ohm | 522 mJ | 600V | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 15A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFH32N48 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-247-3 | 3 | yes | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 480V | 480V | 360W Tc | TO-247AD | 32A | 128A | 0.13Ohm | 1500 mJ | N-Channel | 5200pF @ 25V | 130m Ω @ 15A, 10V | 4V @ 4mA | 32A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFR15N100Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 3 | AVALANCHE RATED, UL RECOGNIZED | compliant | NO | SINGLE | THROUGH-HOLE | 3 | 150°C | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 400W | 1000V | METAL-OXIDE SEMICONDUCTOR | 10A | 45A | 1.2Ohm | 1000 mJ |
