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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA160N10T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta160n10t7-datasheets-9919.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSFM-G6 | 61ns | 42 ns | 49 ns | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 430W Tc | 430A | 0.007Ohm | 500 mJ | 100V | N-Channel | 6600pF @ 25V | 7m Ω @ 25A, 10V | 4.5V @ 1mA | 160A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXTA60N20T | IXYS |
Min: 1 Mult: 1 |
download | Trench™ | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta60n20t-datasheets-0055.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 175°C | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 500W Tc | TO-263AA | 150A | 0.04Ohm | 700 mJ | N-Channel | 4530pF @ 25V | 40m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTQ14N60P | IXYS | $0.90 |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta14n60p-datasheets-9417.pdf | 600V | 14A | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 27ns | 26 ns | 70 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | P-CHANNEL | 300W Tc | 42A | 0.55Ohm | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 250μA | 14A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXFA110N15T2 | IXYS | $5.23 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 480W Tc | 800 mJ | N-Channel | 8600pF @ 25V | 13m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTQ54N30T | IXYS | $18.77 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | TO-3P | 54A | 300V | N-Channel | 54A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ14N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft14n80p-datasheets-3875.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 62 ns | 14A | SILICON | DRAIN | SWITCHING | 400W Tc | 0.72Ohm | 500 mJ | 800V | N-Channel | 3900pF @ 25V | 720m Ω @ 500mA, 10V | 5.5V @ 4mA | 14A Tc | 61nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTP32N65XM | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtp32n65xm-datasheets-0454.pdf | TO-220-3 | 15 Weeks | 14A | 650V | 78W Tc | N-Channel | 2206pF @ 25V | 135m Ω @ 16A, 10V | 5.5V @ 250μA | 14A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH120N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 120A | 150V | N-Channel | 120A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH130N15T | IXYS | $2.11 |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtq130n15t-datasheets-0505.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 750W Tc | TO-247AD | 0.012Ohm | 1200 mJ | N-Channel | 9800pF @ 25V | 12m Ω @ 65A, 10V | 4.5V @ 1mA | 130A Tc | 113nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTQ60N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 60A | 300V | N-Channel | 60A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH12N90 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth12n90-datasheets-0640.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 63 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 48A | 0.9Ohm | 900V | N-Channel | 4500pF @ 25V | 900m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXKT70N60C5-TRL | IXYS |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | TO-268 | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH36N55Q2 | IXYS | $7.11 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfh36n55q2-datasheets-0721.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 13ns | 8 ns | 42 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 560W Tc | TO-247AD | 144A | 0.16Ohm | 2500 mJ | 550V | N-Channel | 4100pF @ 25V | 180m Ω @ 500mA, 10V | 5V @ 4mA | 36A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXKR47N60C5 | IXYS | $20.88 |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkr47n60c5-datasheets-0758.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | FET General Purpose Power | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 0.045Ohm | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 47A Tc | 190nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFX170N20P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n20p-datasheets-0736.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 170A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1250W Tc | 400A | 0.014Ohm | 4000 mJ | N-Channel | 11400pF @ 25V | 14m Ω @ 500mA, 10V | 5V @ 1mA | 170A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTK90N15 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixtk90n15-datasheets-0836.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 390W | 1 | FET General Purpose Power | Not Qualified | 30ns | 17 ns | 115 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 390W Tc | 0.016Ohm | 1500 mJ | 150V | N-Channel | 6400pF @ 25V | 16m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFK80N65X2 | IXYS | $18.17 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n65x2-datasheets-1959.pdf | TO-264-3, TO-264AA | 19 Weeks | unknown | 80A | 650V | 890W Tc | N-Channel | 8245pF @ 25V | 40m Ω @ 40A, 10V | 5.5V @ 4mA | 80A Tc | 143nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK240N075L2 | IXYS |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtk240n075l2-datasheets-0923.pdf | TO-264-3, TO-264AA | 26 Weeks | compliant | 75V | 960W Tc | N-Channel | 19000pF @ 25V | 7m Ω @ 120A, 10V | 4.5V @ 3mA | 240A Tc | 546nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1T600N04T2 | IXYS |
Min: 1 Mult: 1 |
download | FRFET®, SupreMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-mmix1t600n04t2-datasheets-0954.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 28 Weeks | 24 | yes | EAR99 | AVALANCHE RATED | DUAL | GULL WING | NOT SPECIFIED | 21 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G21 | 40 ns | 90 ns | 600A | 20V | SILICON | ISOLATED | SWITCHING | 830W Tc | 2000A | 0.0013Ohm | 3000 mJ | 40V | N-Channel | 40000pF @ 25V | 1.3m Ω @ 100A, 10V | 3.5V @ 250μA | 600A Tc | 590nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTT75N10 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth67n10-datasheets-1685.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 60ns | 30 ns | 100 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 300A | 0.02Ohm | 100V | N-Channel | 4500pF @ 25V | 20m Ω @ 37.5A, 10V | 4V @ 4mA | 75A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| MKE38P600LB-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-mke38p600tlbtrr-datasheets-0392.pdf | 9-SMD Module | 600V | N-Channel | 50A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK38N80Q2 | IXYS | $56.44 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx38n80q2-datasheets-0998.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 10 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 735W | 1 | FET General Purpose Power | 20 ns | 16ns | 12 ns | 60 ns | 38A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 0.22Ohm | 4000 mJ | 800V | N-Channel | 8340pF @ 25V | 220m Ω @ 19A, 10V | 4.5V @ 8mA | 38A Tc | 190nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXFL30N120P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfl30n120p-datasheets-1097.pdf | ISOPLUSi5-Pak™ | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | 60ns | 56 ns | 95 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 357W Tc | 80A | 1500 mJ | 1.2kV | N-Channel | 19000pF @ 25V | 380m Ω @ 15A, 10V | 6.5V @ 1mA | 18A Tc | 310nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFN26N100P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn26n100p-datasheets-1147.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 595W | 1 | FET General Purpose Power | Not Qualified | 45ns | 50 ns | 72 ns | 23A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 595W Tc | 65A | 0.39Ohm | 1000 mJ | 1kV | N-Channel | 11900pF @ 25V | 390m Ω @ 13A, 10V | 6.5V @ 1mA | 23A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXTX3N250L | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 24 Weeks | compliant | 2500V | 417W Tc | N-Channel | 5400pF @ 25V | 10 Ω @ 1.5A, 10V | 5V @ 1mA | 3A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP44N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 44A | 150V | N-Channel | 44A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP8N85XM | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp8n85xm-datasheets-1671.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 850V | 33W Tc | N-Channel | 654pF @ 25V | 850m Ω @ 4A, 10V | 5.5V @ 250μA | 8A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP8N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp8n50p3-datasheets-1948.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 24 Weeks | 3 | Single | FET General Purpose Power | 13 ns | 29 ns | 8A | 30V | 500V | 180W Tc | 8A | N-Channel | 705pF @ 25V | 800m Ω @ 4A, 10V | 5V @ 1.5mA | 8A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTP10P15T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp10p15t-datasheets-2123.pdf | TO-220-3 | 3 | 24 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 83W Tc | TO-220AB | 30A | 0.35Ohm | 200 mJ | P-Channel | 2210pF @ 25V | 350m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 36nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||
| IXTA1R6N100D2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r6n100d2-datasheets-1843.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 24 Weeks | 3 | yes | unknown | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 100W Tc | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 1.6A Tc | 27nC @ 5V | Depletion Mode | 10V | ±20V |
