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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFC14N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc14n60p-datasheets-5873.pdf | 600V | 14A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | 27ns | 26 ns | 70 ns | 8A | 30V | SILICON | ISOLATED | SWITCHING | 125W Tc | 8A | 42A | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 630m Ω @ 7A, 10V | 5.5V @ 2.5mA | 8A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||
| IXFV30N50P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n50p-datasheets-3825.pdf | 500V | 30A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 24ns | 24 ns | 82 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXFV22N50P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n50p-datasheets-1343.pdf | 500V | 22A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | 25ns | 21 ns | 72 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 55A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 2.5mA | 22A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||
| IXFR66N50Q2 | IXYS | $4.21 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr66n50q2-datasheets-7398.pdf | ISOPLUS247™ | Lead Free | 3 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 16ns | 10 ns | 60 ns | 50A | 30V | SILICON | ISOLATED | SWITCHING | 500W Tc | 264A | 0.085Ohm | 4000 mJ | 500V | N-Channel | 9125pF @ 25V | 85m Ω @ 33A, 10V | 5.5V @ 8mA | 50A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IXFX26N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx26n90-datasheets-7456.pdf | TO-247-3 | Lead Free | 3 | 300mOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 35ns | 24 ns | 130 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 104A | 900V | N-Channel | 10800pF @ 25V | 300m Ω @ 13A, 10V | 5V @ 8mA | 26A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTA182N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta182n055t-datasheets-7499.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-G6 | 35ns | 38 ns | 53 ns | 182A | SILICON | DRAIN | SWITCHING | 360W Tc | 490A | 0.005Ohm | 1000 mJ | 55V | N-Channel | 4850pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 182A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTA182N055T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta182n055t7-datasheets-7534.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-G6 | 35ns | 38 ns | 53 ns | 182A | SILICON | DRAIN | SWITCHING | 360W Tc | 490A | 0.005Ohm | 1000 mJ | 55V | N-Channel | 4850pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 182A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTH220N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth220n075t-datasheets-7567.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-T3 | 65ns | 47 ns | 55 ns | 220A | SILICON | DRAIN | SWITCHING | 480W Tc | TO-247AD | 600A | 0.0045Ohm | 1000 mJ | 75V | N-Channel | 7700pF @ 25V | 4.5m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 165nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXTH240N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth240n055t-datasheets-7605.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-T3 | 54ns | 75 ns | 63 ns | 240A | SILICON | DRAIN | SWITCHING | 480W Tc | TO-247AD | 650A | 0.0036Ohm | 1000 mJ | 55V | N-Channel | 7600pF @ 25V | 3.6m Ω @ 25A, 10V | 4V @ 250μA | 240A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTQ230N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth230n085t-datasheets-7564.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | 49ns | 39 ns | 56 ns | 230A | SILICON | DRAIN | SWITCHING | 550W Tc | 520A | 0.0044Ohm | 1000 mJ | 85V | N-Channel | 9900pF @ 25V | 4.4m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 187nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTQ160N085T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta160n085t-datasheets-7462.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 61ns | 36 ns | 65 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.006Ohm | 1000 mJ | 85V | N-Channel | 6400pF @ 25V | 6m Ω @ 50A, 10V | 4V @ 1mA | 160A Tc | 164nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| VMO150-01P1 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-vmo15001p1-datasheets-7746.pdf | ECO-PAC2 | 11 | 4 | yes | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 11 | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X11 | 165A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 400W Tc | 720A | 0.008Ohm | 3000 mJ | N-Channel | 9400pF @ 25V | 8m Ω @ 90A, 10V | 4V @ 8mA | 165A Tc | 400nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFR34N80 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfr34n80-datasheets-5220.pdf | 800V | 28A | ISOPLUS247™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 45ns | 40 ns | 100 ns | 28A | 20V | SILICON | ISOLATED | SWITCHING | 416W Tc | 600A | 0.24Ohm | 800V | N-Channel | 7500pF @ 25V | 240m Ω @ 17A, 10V | 4V @ 8mA | 28A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| VM0550-2F | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | Bulk | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | 100V | 100A | Module | Lead Free | 590A | 2200W | N-Channel | 50000pF @ 25V | 2.1m Ω @ 500mA, 10V | 590A Tc | 2000nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP470 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-irfp470-datasheets-8476.pdf | TO-3P-3 Full Pack | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 30 ns | 65 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 96A | 500V | N-Channel | 4200pF @ 25V | 230m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFJ32N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfj32n50q-datasheets-8538.pdf | TO-220-3, Short Tab | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 42ns | 20 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-268AA | 128A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 150m Ω @ 16A, 10V | 4V @ 4mA | 32A Tc | 153nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXFN340N06 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn340n06-datasheets-8631.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 95ns | 33 ns | 200 ns | 340A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700W Tc | 1360A | 0.003Ohm | 60V | N-Channel | 16800pF @ 25V | 3m Ω @ 100A, 10V | 4V @ 8mA | 340A Tc | 600nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXFT80N15Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n15q-datasheets-4484.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 55ns | 20 ns | 68 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 320A | 0.0225Ohm | 1500 mJ | 150V | N-Channel | 4500pF @ 25V | 22.5m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXFX32N50Q | IXYS | $16.32 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n50q-datasheets-8700.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 42ns | 20 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 128A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 160m Ω @ 16A, 10V | 4.5V @ 4mA | 32A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXTC102N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS220™ | 250V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMO1600-02P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-vmo160002p-datasheets-9161.pdf | Y3-Li | 4 | 4 | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 1.9kA | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 1900A | 0.00165Ohm | N-Channel | 1.7m Ω @ 1600A, 10V | 5V @ 5mA | 1900A Tc | 2900nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTC36P15P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtr36p15p-datasheets-4025.pdf | ISOPLUS220™ | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | 150W Tc | 100A | 0.12Ohm | 1500 mJ | P-Channel | 2950pF @ 25V | 120m Ω @ 18A, 10V | 5V @ 250μA | 22A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXCP01N90E | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixcp01n90e-datasheets-4320.pdf | TO-220-3 | 3 | 3 | yes | e0 | Tin/Lead (Sn/Pb) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 61 ns | 250mA | SILICON | DRAIN | SWITCHING | 40W Tc | TO-220AB | 175A | 0.08Ohm | 900V | N-Channel | 133pF @ 25V | 80 Ω @ 50mA, 10V | 5V @ 25μA | 250mA Tc | 7.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFK26N60Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixfx26n60q-datasheets-7450.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 32ns | 16 ns | 80 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 104A | 0.25Ohm | 1500 mJ | 600V | N-Channel | 5100pF @ 25V | 250m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| IXFP3N50PM | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp3n50pm-datasheets-4507.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 36W | 1 | Not Qualified | R-PSFM-T3 | 28ns | 29 ns | 63 ns | 2.7A | 30V | SILICON | ISOLATED | SWITCHING | 36W Tc | TO-220AB | 8A | 2Ohm | 100 mJ | 500V | N-Channel | 409pF @ 25V | 2 Ω @ 1.8A, 10V | 5.5V @ 250μA | 2.7A Tc | 9.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXTF03N400 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtf03n400-datasheets-3089.pdf | i4-Pac™-5 (3 Leads) | 3 | yes | EAR99 | UL RECOGNIZED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 70W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 16ns | 58 ns | 86 ns | 300mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4000V | 70W Tc | 0.3A | 0.8A | 4kV | N-Channel | 435pF @ 25V | 300 Ω @ 150mA, 10V | 4V @ 250μA | 300mA Tc | 16.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXFJ80N10Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH1837 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD23N60Q-72 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | Die | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 0.35Ohm | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM1712 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant |
