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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFH13N50 | IXYS | $3.79 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n50-datasheets-7571.pdf | 500V | 13A | TO-247-3 | Lead Free | 3 | 3 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 27ns | 32 ns | 76 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 52A | 0.4Ohm | 500V | N-Channel | 2800pF @ 25V | 400m Ω @ 6.5A, 10V | 4V @ 2.5mA | 13A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTY26P10T | IXYS | $1.42 |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty26p10t-datasheets-9365.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 4 | 150W | 1 | Other Transistors | R-PSSO-G2 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 150W Tc | 80A | 0.09Ohm | 300 mJ | P-Channel | 3820pF @ 25V | 90m Ω @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||
| IXFA7N100P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 1000V | 300W Tc | N-Channel | 2590pF @ 25V | 1.9 Ω @ 3.5A, 10V | 6V @ 1mA | 7A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA180N10T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 100V | 480W Tc | N-Channel | 10500pF @ 25V | 6m Ω @ 50A, 10V | 4V @ 250μA | 180A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP36N20X3M | IXYS | $3.89 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp36n20x3m-datasheets-9803.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 200V | 36W Tc | N-Channel | 1425pF @ 25V | 45m Ω @ 18A, 10V | 4.5V @ 500μA | 36A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R4N120P | IXYS | $5.00 |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n120p-datasheets-9773.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 13Ohm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 86W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 29 ns | 78 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 86W Tc | 3A | 1.2kV | N-Channel | 666pF @ 25V | 13 Ω @ 500mA, 10V | 4.5V @ 100μA | 1.4A Tc | 24.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFP270N06T3 | IXYS |
Min: 1 Mult: 1 |
download | HiperFET™, TrenchT3™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh270n06t3-datasheets-1458.pdf | TO-220-3 | 26 Weeks | yes | unknown | 270mA | 60V | 480W Tc | N-Channel | 12600pF @ 25V | 3.1m Ω @ 100A, 10V | 4V @ 250μA | 270A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N120-TRR | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1200V | 200W Tc | N-Channel | 1350pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP20N50P3 | IXYS | $4.21 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfq20n50p3-datasheets-3225.pdf | TO-220-3 | 3 | 8 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 380W Tc | TO-220AB | 20A | 40A | 0.3Ohm | 300 mJ | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 8A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXKP20N60C5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkp20n60c5-datasheets-0375.pdf | TO-220-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | FET General Purpose Power | Not Qualified | 5ns | 5 ns | 50 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | TO-220AB | 0.2Ohm | 600V | N-Channel | 1520pF @ 100V | 200m Ω @ 10A, 10V | 3.5V @ 1.1mA | 20A Tc | 45nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXKH20N60C5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkp20n60c5-datasheets-0375.pdf | TO-3P-3 Full Pack | 3 | 32 Weeks | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5ns | 5 ns | 50 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 0.2Ohm | 435 mJ | 600V | N-Channel | 1520pF @ 100V | 200m Ω @ 10A, 10V | 3.5V @ 1.1mA | 20A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTP300N04T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta300n04t2-datasheets-9952.pdf | TO-220-3 | 3 | 17 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 300A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 480W Tc | TO-220AB | 900A | 0.0025Ohm | 600 mJ | N-Channel | 10700pF @ 25V | 2.5m Ω @ 500mA, 10V | 4V @ 250μA | 300A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTQ102N20T | IXYS | $6.68 |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | TO-3P-3, SC-65-3 | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 750W | 1 | FET General Purpose Power | Not Qualified | 26ns | 25 ns | 50 ns | 102A | 30V | SILICON | DRAIN | SWITCHING | 750W Tc | 250A | 1200 mJ | 200V | N-Channel | 6800pF @ 25V | 23m Ω @ 500mA, 10V | 4.5V @ 1mA | 102A Tc | 114nC @ 10V | ||||||||||||||||||||||||||||||||||
| IXFH16N50P3 | IXYS | $7.22 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp16n50p3-datasheets-3145.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 20 Weeks | 3 | AVALANCHE RATED | Single | 1 | FET General Purpose Power | 19 ns | 44 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 330W Tc | TO-247AD | 40A | N-Channel | 1515pF @ 25V | 360m Ω @ 8A, 10V | 5V @ 2.5mA | 16A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFT150N20T | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n20t-datasheets-4462.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 150A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 890W Tc | 375A | 0.015Ohm | 1500 mJ | N-Channel | 11700pF @ 25V | 15m Ω @ 75A, 10V | 5V @ 4mA | 150A Tc | 177nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTA230N075T2 | IXYS | $24.46 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp230n075t2-datasheets-0641.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 230A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 480W Tc | 700A | 0.0042Ohm | 850 mJ | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 178nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTR32P60P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtr32p60p-datasheets-0703.pdf | ISOPLUS247™ | 3 | 28 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 18A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 310W Tc | 96A | 0.385Ohm | 3500 mJ | P-Channel | 11100pF @ 25V | 385m Ω @ 16A, 10V | 4V @ 1mA | 18A Tc | 196nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTK180N15 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtk180n15-datasheets-0743.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 9MOhm | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 730W | 1 | FET General Purpose Power | Not Qualified | 40ns | 35 ns | 120 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 730W Tc | 720A | 150V | N-Channel | 7000pF @ 25V | 9m Ω @ 500mA, 10V | 4V @ 250μA | 180A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFX250N10P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfx250n10p-datasheets-0776.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 250A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1250W Tc | 700A | 0.0065Ohm | 3000 mJ | N-Channel | 16000pF @ 25V | 6.5m Ω @ 50A, 10V | 5V @ 1mA | 250A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFK20N120 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx20n120-datasheets-0789.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 3 | yes | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 780W | 1 | Not Qualified | 25 ns | 45ns | 20 ns | 75 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 780W Tc | 80A | 0.75Ohm | 2000 mJ | 1.2kV | N-Channel | 7400pF @ 25V | 750m Ω @ 500mA, 10V | 4.5V @ 8mA | 20A Tc | 160nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| FDM47-06KC5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™, HiPerDyn™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-fmd4706kc5-datasheets-0824.pdf | ISOPLUSi5-Pak™ | 5 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T5 | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 0.045Ohm | 1950 mJ | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 47A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFL44N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfl44n100p-datasheets-0904.pdf | ISOPLUS264™ | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | 68ns | 54 ns | 90 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 357W Tc | 110A | 0.24Ohm | 2000 mJ | 1kV | N-Channel | 19000pF @ 25V | 240m Ω @ 22A, 10V | 6.5V @ 1mA | 22A Tc | 305nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFN100N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk90n20-datasheets-2052.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 23MOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | Not Qualified | 80ns | 30 ns | 75 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 200V | N-Channel | 9000pF @ 25V | 23m Ω @ 500mA, 10V | 4V @ 8mA | 100A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFE50N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe50n50-datasheets-0976.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 60ns | 45 ns | 120 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 53A | 220A | 0.1Ohm | 500V | N-Channel | 9400pF @ 25V | 100m Ω @ 25A, 10V | 4.5V @ 8mA | 47A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFN27N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfn27n80q-datasheets-1015.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 40g | No SVHC | 320mOhm | 4 | yes | EAR99 | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | Not Qualified | 2.5kV | 28ns | 13 ns | 50 ns | 27A | 20V | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4.5V | 520W Tc | 108A | 2500 mJ | 800V | N-Channel | 7600pF @ 25V | 4.5 V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 27A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXFN21N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn21n100q-datasheets-1049.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 18ns | 12 ns | 60 ns | 21A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 520W Tc | 0.5Ohm | 2500 mJ | 1kV | N-Channel | 5900pF @ 25V | 500m Ω @ 500mA, 10V | 5V @ 4mA | 21A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTK46N50L | IXYS | $36.13 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtx46n50l-datasheets-9312.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 160MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 50ns | 42 ns | 80 ns | 46A | 30V | SILICON | DRAIN | SWITCHING | 700W Tc | 100A | 1500 mJ | 500V | N-Channel | 7000pF @ 25V | 160m Ω @ 500mA, 20V | 6V @ 250μA | 46A Tc | 260nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||||||
| IXFN32N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n60-datasheets-0809.pdf | SOT-227-4, miniBLOC | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 45ns | 60 ns | 100 ns | 32A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520AW Tc | 128A | 0.25Ohm | 600V | N-Channel | 9000pF @ 25V | 250m Ω @ 500mA, 10V | 4.5V @ 8mA | 32A Tc | 325nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTN120P20T | IXYS | $51.69 |
Min: 1 Mult: 1 |
download | TrenchP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtn120p20t-datasheets-1162.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | EAR99 | AVALANCHE RATED, UL RECOGNIZED | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | R-PUFM-X4 | 106A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 830W Tc | 400A | 0.03Ohm | 3000 mJ | P-Channel | 73000pF @ 25V | 30m Ω @ 60A, 10V | 4.5V @ 250μA | 106A Tc | 740nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| IXFP7N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp7n60p3-datasheets-1330.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 180W Tc | TO-220AB | 7A | 16A | 400 mJ | N-Channel | 705pF @ 25V | 1.15 Ω @ 500mA, 10V | 5V @ 1mA | 7A Tc | 13.3nC @ 10V | 10V | ±30V |
