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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Forward Current | Forward Voltage | Isolation Voltage | Turn On Delay Time | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | Threshold Voltage | Power - Max | Diode Element Material | Power Dissipation-Max | Peak Reverse Current | Peak Non-Repetitive Surge Current | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Number of Phases | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Reverse Voltage (DC) | Voltage - Off State | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - On State (It (AV)) (Max) | SCR Type | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Turn Off Time-Nom (toff) | Test Condition | Structure | Number of SCRs, Diodes | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFK80N20Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n20q-datasheets-5589.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 50ns | 20 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.028Ohm | 1500 mJ | 200V | N-Channel | 4600pF @ 25V | 28m Ω @ 500mA, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX32N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n50-datasheets-8698.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 360W Tc | 120A | 0.15Ohm | 1500 mJ | N-Channel | 5450pF @ 25V | 150m Ω @ 15A, 10V | 4V @ 4mA | 32A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTC13N50 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtc13n50-datasheets-8751.pdf | ISOPLUS220™ | 3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 140W | 1 | Not Qualified | 27ns | 32 ns | 76 ns | 12A | 20V | SILICON | ISOLATED | SWITCHING | 140W Tc | 48A | 0.4Ohm | 500V | N-Channel | 2800pF @ 25V | 400m Ω @ 6.5A, 10V | 4V @ 2.5mA | 12A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX210N17T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk210n17t-datasheets-9134.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 210A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1150W Tc | 580A | 0.0075Ohm | 2000 mJ | N-Channel | 18800pF @ 25V | 7.5m Ω @ 60A, 10V | 5V @ 4mA | 210A Tc | 285nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV12N120P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n120p-datasheets-4453.pdf | TO-220-3, Short Tab | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 543W | 1 | FET General Purpose Power | Not Qualified | 25ns | 34 ns | 62 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 543W Tc | 500 mJ | 1.2kV | N-Channel | 5400pF @ 25V | 1.35 Ω @ 500mA, 10V | 6.5V @ 1mA | 12A Tc | 103nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFF24N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixff24n100-datasheets-4316.pdf | i4-Pac™-5 (3 Leads) | 3 | 3 | HIGH VOLTAGE, HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 75 ns | 22A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 120A | 1kV | N-Channel | 390m Ω @ 15A, 10V | 5V @ 8mA | 22A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH28N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh28n50q-datasheets-5608.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 375W | 1 | Not Qualified | 20ns | 12 ns | 51 ns | 28A | 30V | SILICON | DRAIN | SWITCHING | 375W Tc | TO-247AD | 112A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 3000pF @ 25V | 200m Ω @ 14A, 10V | 4.5V @ 4mA | 28A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n60-datasheets-4492.pdf | SOT-227-4, miniBLOC | 4 | 46g | No SVHC | 130mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 600W | 1 | FET General Purpose Power | R-PUFM-X4 | 2.5kV | 55ns | 45 ns | 110 ns | 44A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4.5V | 600W Tc | 600V | N-Channel | 8900pF @ 25V | 4.5 V | 130m Ω @ 500mA, 10V | 4.5V @ 8mA | 44A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA02N450HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt02n450hv-datasheets-2437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | e3 | Matte Tin (Sn) | Single | 113W | 1 | FET General Purpose Power | 48ns | 143 ns | 28 ns | 200mA | 20V | 4500V | 113W Tc | 0.2A | 4.5kV | N-Channel | 256pF @ 25V | 750 Ω @ 10mA, 10V | 6.5V @ 250μA | 200mA Tc | 10.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD80N10Q-8XQ | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Die | 100V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX20N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-247-3 | 3 | yes | AVALANCHE RATED | compliant | e1 | TIN SILVER COPPER | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 800V | 800V | 360W Tc | TO-247AD | 20A | 80A | 0.42Ohm | 1500 mJ | N-Channel | 5100pF @ 25V | 420m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| T-FD28N50Q-72 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM35N30 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh35n30-datasheets-7656.pdf | TO-204AE | 2 | yes | EAR99 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 300W Tc | 35A | 140A | 0.1Ohm | N-Channel | 4800pF @ 25V | 100m Ω @ 17.5A, 10V | 4V @ 4mA | 35A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM24N50L | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDD430CI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDD430CI | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDI430MYI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDI430MYI | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP4N100Q | IXYS | $5.64 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfa4n100q-datasheets-5554.pdf | TO-220-3 | Lead Free | 3 | 8 Weeks | No SVHC | 3Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | Pure Tin (Sn) | 3 | Single | 150W | 1 | FET General Purpose Power | 15ns | 18 ns | 32 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 5V | 150W Tc | TO-220AB | 4A | 700 mJ | 1kV | N-Channel | 1050pF @ 25V | 3 Ω @ 2A, 10V | 5V @ 1.5mA | 4A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH150N25X3 | IXYS | $14.27 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n25x3hv-datasheets-4378.pdf | TO-247-3 | 19 Weeks | 250V | 780W Tc | N-Channel | 10400pF @ 25V | 9m Ω @ 75A, 10V | 4.5V @ 4mA | 150A Tc | 154nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP48N20T | IXYS | $12.41 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta48n20t-datasheets-2323.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 26ns | 28 ns | 46 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 250W Tc | TO-220AB | 130A | 0.05Ohm | 500 mJ | 200V | N-Channel | 3000pF @ 25V | 50m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH62N65X2 | IXYS | $9.06 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth62n65x2-datasheets-2385.pdf | TO-247-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 62A | 650V | 780W Tc | N-Channel | 5940pF @ 25V | 52m Ω @ 31A, 10V | 4.5V @ 4mA | 62A Tc | 104nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR80N50Q3 | IXYS | $31.47 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n50q3-datasheets-2486.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 72MOhm | 247 | AVALANCHE RATED, UL RECOGNIZED | 3 | Single | 570W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 30 ns | 250ns | 43 ns | 50A | 30V | SILICON | ISOLATED | SWITCHING | 570W Tc | 45A | 240A | 5000 mJ | 500V | N-Channel | 10000pF @ 25V | 72m Ω @ 40A, 10V | 6.5V @ 8mA | 50A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP90N20X3M | IXYS | $3.63 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/ixys-ixfp90n20x3m-datasheets-3850.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 200V | 36W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK210N30X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfx210n30x3-datasheets-8871.pdf | TO-264-3, TO-264AA | 19 Weeks | 300V | 1250W Tc | N-Channel | 24.2nF @ 25V | 5.5m Ω @ 105A, 10V | 4.5V @ 8mA | 210A Tc | 375nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS10-01AS | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 175°C | -55°C | SCHOTTKY | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-dss1001as-datasheets-9971.pdf | TO-263-3 | Lead Free | 2 | 3 | yes | EAR99 | HIGH RELIABILITY, LOW NOISE, FREEWHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 840mV | 120A | 300μA | CATHODE | POWER | SILICON | 90W | 120A | RECTIFIER DIODE | 100V | 10A | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI8-06AS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | 50 ns | 600V | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DNA30E2200PZ | IXYS |
Min: 1 Mult: 1 |
Surface Mount | Cut Tape (CT) | 150°C | -55°C | RoHS Compliant | TO-263-3 | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSSO-G2 | 30A | 1.26V | 370A | ANODE | HIGH VOLTAGE | SILICON | 210W | 40μA | TO-263AB | RECTIFIER DIODE | 2.2kV | 30A | 1 | 2.2kV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N2418ZD360 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | 1 (Unlimited) | ROHS3 Compliant | TO-200AF | 8 Weeks | 3.6kV | 30000A @ 50Hz | 2418A | Standard Recovery | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCD501-12IO1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | 125°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2011 | /files/ixys-mcd50116io1-datasheets-4294.pdf | WC-501 | 501 | MC*501 | 1.2kV | Series Connection - SCR/Diode | 1 SCR, 1 Diode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH16N60B2D1 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixga16n60b2d1-datasheets-4743.pdf | TO-247-3 | 3 | 6.500007g | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 150W | NOT SPECIFIED | IXG*16N60 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 150W | TO-247AD | 30 ns | 600V | 43 ns | 600V | 40A | 280 ns | 400V, 12A, 22 Ω, 15V | 20V | 5.5V | 1.95V @ 15V, 12A | PT | 24nC | 100A | 18ns/73ns | 160μJ (on), 120μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGR48N60B3D1 | IXYS |
Min: 1 Mult: 1 |
download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgr48n60b3d1-datasheets-0614.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | 150W | NOT SPECIFIED | IXG*48N60 | 3 | Single | NOT SPECIFIED | 150W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 100 ns | 600V | 1.77V | 44 ns | 600V | 60A | 347 ns | 480V, 30A, 5 Ω, 15V | 20V | 5.5V | 2.1V @ 15V, 40A | PT | 115nC | 280A | 22ns/130ns | 840μJ (on), 660μJ (off) | 200ns |
