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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF5804TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf5804trpbf-datasheets-1371.pdf | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 6 | 2W | 1 | Micro6™(TSOP-6) | 680pF | -2.5A | 20V | -40V | 40V | -3V | 2W Ta | 334mOhm | -40V | P-Channel | 680pF @ 25V | -3 V | 198mOhm @ 2.5A, 10V | 3V @ 250μA | 2.5A Ta | 8.5nC @ 10V | 198 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF5800TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf5800trpbf-datasheets-1395.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | No SVHC | 6 | No | 2W | 1 | Micro6™(TSOP-6) | 535pF | 11.4 ns | 24 ns | -4A | 20V | -30V | 30V | -1V | 2W Ta | 85mOhm | -30V | P-Channel | 535pF @ 25V | -1 V | 85mOhm @ 4A, 10V | 1V @ 250μA | 4A Ta | 17nC @ 10V | 85 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTD4963NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntd4963n35g-datasheets-5243.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 9.6MOhm | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 35.7W | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 20ns | 3 ns | 14 ns | 8.1A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 1.1W Ta 35.7W Tc | 33.8 mJ | 30V | N-Channel | 1035pF @ 12V | 2.5 V | 9.6m Ω @ 30A, 10V | 2.5V @ 250μA | 8.1A Ta 44A Tc | 16.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| NTTFS5811NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-nttfs5811nltwg-datasheets-1252.pdf | 8-PowerWDFN | 3.15mm | 800μm | 3.15mm | Lead Free | 5 | No SVHC | 6.4MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 8 | Single | 33W | 1 | FET General Purpose Power | S-PDSO-F5 | 11 ns | 30ns | 12 ns | 21 ns | 53A | 20V | SILICON | DRAIN | 1.7V | 2.7W Ta 33W Tc | 65 mJ | 40V | N-Channel | 1570pF @ 25V | 1.7 V | 6.4m Ω @ 20A, 10V | 2.2V @ 250μA | 17A Ta 53A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| RJK0328DPB-01#J0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0328dpb01j0-datasheets-1309.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | EAR99 | Gold | No | SINGLE | GULL WING | 65W | 1 | FET General Purpose Power | R-PSSO-G4 | 9.4 ns | 4.3ns | 7.3 ns | 61.5 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 65W Tc | 240A | 0.0029Ohm | N-Channel | 6380pF @ 10V | 2.1m Ω @ 30A, 10V | 2.5V @ 1mA | 60A Ta | 42nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NDD05N50ZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndd05n50z1g-datasheets-4792.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 5 Weeks | 4.535924g | No SVHC | 1.5Ohm | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 4 | Single | 83W | 1 | FET General Purpose Powers | R-PSSO-G2 | 11 ns | 15ns | 14 ns | 24 ns | 4.7A | 30V | SILICON | DRAIN | 500V | 500V | 4.5V | 83W Tc | 3A | N-Channel | 530pF @ 25V | 4.5 V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.7A Tc | 18.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| NDD02N60ZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ndd02n60z1g-datasheets-5213.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 4.8Ohm | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | YES | GULL WING | 4 | Single | 57W | 1 | FET General Purpose Powers | R-PSSO-G2 | 9 ns | 7ns | 7 ns | 15 ns | 2.2A | 30V | SILICON | DRAIN | 4.5V | 57W Tc | 9A | 600V | N-Channel | 325pF @ 25V | 4.5 V | 4.8 Ω @ 1A, 10V | 4.5V @ 50μA | 2.2A Tc | 16nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| NDF06N62ZG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndf06n62zg-datasheets-1199.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.9mm | Lead Free | 3 | 1.2Ohm | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 3 | Single | 31W | 1 | 13 ns | 19ns | 28 ns | 32 ns | 6A | 30V | SILICON | DRAIN | SWITCHING | 31W Tc | TO-220AB | 6A | 20A | 620V | N-Channel | 923pF @ 25V | 1.2 Ω @ 3A, 10V | 4.5V @ 100μA | 6A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| NTD6415ANT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntd6415an1g-datasheets-5039.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 55MOhm | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 4 | Single | 40 | 83W | 1 | R-PSSO-G2 | 10 ns | 37ns | 37 ns | 30 ns | 23A | 20V | SILICON | DRAIN | 100V | 4V | 83W Tc | 89A | 79 mJ | N-Channel | 700pF @ 25V | 4 V | 55m Ω @ 23A, 10V | 4V @ 250μA | 23A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| NTD5865NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntd5865n1g-datasheets-1172.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 18MOhm | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 52W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 17ns | 3.5 ns | 20 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 71W Tc | 38A | 36 mJ | 60V | N-Channel | 1261pF @ 25V | 18m Ω @ 20A, 10V | 4V @ 250μA | 43A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTD4960NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ntd4960n35g-datasheets-1091.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 8MOhm | 4 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | 260 | 4 | Single | 40 | 1.68W | 1 | R-PSSO-G2 | 12 ns | 20ns | 4 ns | 15 ns | 11.1A | 20V | SILICON | DRAIN | SWITCHING | 1.07W Ta 35.71W Tc | 8.9A | 30V | N-Channel | 1300pF @ 15V | 8m Ω @ 30A, 10V | 2.5V @ 250μA | 8.9A Ta 55A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTF1N400 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtf1n400-datasheets-1240.pdf | i4-Pac™-5 (3 Leads) | 3 | 3 | yes | EAR99 | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 1A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4000V | 4000V | 160W Tc | 1A | 3A | N-Channel | 2530pF @ 25V | 60 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTTFS5811NLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-nttfs5811nltwg-datasheets-1252.pdf | 8-PowerWDFN | 3.15mm | 800μm | 3.15mm | Lead Free | 5 | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 33W | 1 | FET General Purpose Power | S-PDSO-F5 | 11 ns | 30ns | 12 ns | 21 ns | 53A | 20V | SILICON | DRAIN | 2.7W Ta 33W Tc | 65 mJ | 40V | N-Channel | 1570pF @ 25V | 1.7 V | 6.4m Ω @ 20A, 10V | 2.2V @ 250μA | 17A Ta 53A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| FDMS0308CS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms0308cs-datasheets-1255.pdf | 8-PowerTDFN | 90mg | 56 | No | Single | 65W | 8-PQFN (5x6) | 4.225nF | 14 ns | 6ns | 5 ns | 35 ns | 22A | 20V | 30V | 2.5W Ta 65W Tc | 3.5mOhm | 30V | N-Channel | 4225pF @ 15V | 3mOhm @ 21A, 10V | 3V @ 1mA | 22A Ta | 66nC @ 10V | 3 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLS3036TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irls3036trrpbf-datasheets-1267.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 3 | Single | 380W | D2PAK | 11.21nF | 66 ns | 220ns | 110 ns | 110 ns | 195A | 16V | 60V | 380W Tc | 2.4mOhm | 60V | N-Channel | 11210pF @ 50V | 2.4mOhm @ 165A, 10V | 2.5V @ 250μA | 195A Tc | 140nC @ 4.5V | 2.4 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4800NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/onsemiconductor-nttfs4800ntwg-datasheets-5350.pdf | 8-PowerWDFN | 3.15mm | 800μm | 3.15mm | Lead Free | 5 | 8 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 4.5W | 1 | Not Qualified | S-XDSO-F5 | 11.1 ns | 14 ns | 8.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 860mW Ta 33.8W Tc | 5A | 57A | 0.027Ohm | 36.6 mJ | N-Channel | 964pF @ 15V | 20m Ω @ 20A, 10V | 3V @ 250μA | 5A Ta 32A Tc | 16.6nC @ 10V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||
| NTTFS5820NLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs5820nltag-datasheets-9050.pdf | 8-PowerWDFN | 3.15mm | 800μm | 3.15mm | Lead Free | 5 | 8 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 33W | 1 | FET General Purpose Power | S-PDSO-F5 | 10 ns | 28ns | 22 ns | 19 ns | 37A | 20V | SILICON | DRAIN | 2.7W Ta 33W Tc | 60V | N-Channel | 1462pF @ 25V | 11.5m Ω @ 8.7A, 10V | 2.3V @ 250μA | 11A Ta 37A Tc | 28nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI1039X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1039xt1e3-datasheets-7770.pdf | SOT-563, SOT-666 | 6 | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | MATTE TIN | DUAL | FLAT | 260 | 6 | Single | 40 | 1 | Other Transistors | 15 ns | 20ns | 16 ns | 30 ns | 870mA | 8V | SILICON | SWITCHING | 12V | 170mW Ta | 0.87A | -12V | P-Channel | 165m Ω @ 870mA, 4.5V | 450mV @ 250μA (Min) | 870mA Ta | 6nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| IRF9317PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf9317trpbf-datasheets-0964.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 10 Weeks | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 19 ns | 64ns | 120 ns | 160 ns | -16A | 20V | SILICON | SWITCHING | 30V | -1.8V | 2.5W Ta | 50 ns | 0.0066Ohm | 330 mJ | -30V | P-Channel | 2820pF @ 15V | -1.8 V | 6.6m Ω @ 16A, 10V | 2.4V @ 50μA | 16A Ta | 92nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NDF08N60ZG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndf08n60zg-datasheets-1121.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.9mm | Lead Free | 3 | 3 | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 35W | 1 | FET General Purpose Powers | 14 ns | 22ns | 15 ns | 36 ns | 8.4A | 30V | SILICON | ISOLATED | 36W Tc | TO-220AB | 0.95Ohm | 600V | N-Channel | 1140pF @ 25V | 950m Ω @ 3.5A, 10V | 4.5V @ 100μA | 8.4A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| NTD4960N-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4960n35g-datasheets-1091.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.49mm | 2.38mm | Lead Free | 3 | 8MOhm | 4 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.68W | 1 | Not Qualified | R-PSIP-T3 | 12 ns | 20ns | 4 ns | 15 ns | 11.1A | 20V | SILICON | DRAIN | SWITCHING | 1.07W Ta 35.71W Tc | 8.9A | 30V | N-Channel | 1300pF @ 15V | 8m Ω @ 30A, 10V | 2.5V @ 250μA | 8.9A Ta 55A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NDD04N50ZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndd04n50z1g-datasheets-1078.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 4 Weeks | No SVHC | 2.7Ohm | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 61W | 1 | FET General Purpose Powers | R-PSSO-G2 | 9 ns | 9ns | 10 ns | 16 ns | 3A | 30V | SILICON | DRAIN | 61W Tc | 3A | 500V | N-Channel | 308pF @ 25V | 2.7 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| NTB6411ANT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntb6411ang-datasheets-4990.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.29mm | 4.83mm | 9.65mm | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | GULL WING | 3 | Single | 217W | 1 | FET General Purpose Powers | R-PSSO-G2 | 16 ns | 144ns | 157 ns | 107 ns | 72A | 20V | SILICON | DRAIN | 100V | 217W Tc | 77A | 285A | 470 mJ | N-Channel | 3700pF @ 25V | 14m Ω @ 72A, 10V | 4V @ 250μA | 77A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTMKE4892NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmke4892nt1g-datasheets-1154.pdf | 5-ICEPAK | 3 | 5 | EAR99 | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-XBCC-N3 | 148A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 89W Tc | 26A | 210A | 0.0026Ohm | 290 mJ | N-Channel | 4270pF @ 15V | 2.6m Ω @ 24A, 10V | 2.4V @ 250μA | 26A Ta 148A Tc | 61nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTMKB4895NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmkb4895nt1g-datasheets-1156.pdf | 4-ICEPAK | 2 | 4 | EAR99 | BOTTOM | NO LEAD | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Not Qualified | R-XBCC-N2 | 66A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.2W Ta 42W Tc | 15A | 120A | 0.006Ohm | 80 mJ | N-Channel | 1644pF @ 15V | 6m Ω @ 15A, 10V | 2.4V @ 250μA | 15A Ta 66A Tc | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTD5865N-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntd5865n1g-datasheets-1172.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 3 | 18MOhm | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | THROUGH-HOLE | 4 | Single | 52W | 1 | R-PSIP-T3 | 10 ns | 17ns | 3.5 ns | 20 ns | 38A | 20V | SILICON | DRAIN | SWITCHING | 71W Tc | 36 mJ | 60V | N-Channel | 1261pF @ 25V | 18m Ω @ 20A, 10V | 4V @ 250μA | 43A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NDD03N50ZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndd03n50z1g-datasheets-1020.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 3.3Ohm | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 58W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 7ns | 7 ns | 15 ns | 2.6A | 30V | SILICON | DRAIN | 500V | 500V | 58W Tc | N-Channel | 329pF @ 25V | 3.3 Ω @ 1.15A, 10V | 4.5V @ 50μA | 2.6A Tc | 16nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRF6798MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-irf6798mtr1pbf-datasheets-6282.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | 3 | 5 | EAR99 | No | BOTTOM | 78W | 1 | FET General Purpose Power | R-XBCC-N3 | 15 ns | 31ns | 16 ns | 20 ns | 37A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 78W Tc | 197A | 300A | 0.0013Ohm | 220 mJ | 25V | N-Channel | 6560pF @ 13V | 1.3m Ω @ 37A, 10V | 2.35V @ 150μA | 37A Ta 197A Tc | 75nC @ 4.5V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NDF11N50ZG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/onsemiconductor-ndf11n50zh-datasheets-0883.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.9mm | Lead Free | 3 | 18 Weeks | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 39W | 1 | FET General Purpose Power | 15 ns | 32ns | 23 ns | 40 ns | 12A | 30V | SILICON | ISOLATED | 3.9V | 39W Tc | TO-220AB | 6.7A | 42A | 0.52Ohm | 420 mJ | 500V | N-Channel | 1645pF @ 25V | 3.9 V | 520m Ω @ 4.5A, 10V | 4.5V @ 100μA | 12A Tc | 69nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| NDF04N62ZG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndf04n62zg-datasheets-1093.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.9mm | Lead Free | 3 | Unknown | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 3 | Single | 28W | 1 | 12 ns | 13ns | 14 ns | 25 ns | 4.4A | 30V | SILICON | ISOLATED | SWITCHING | 28W Tc | TO-220AB | 2Ohm | 620V | N-Channel | 535pF @ 25V | 2 Ω @ 2A, 10V | 4.5V @ 50μA | 4.4A Tc | 19nC @ 10V | 10V | ±30V |
