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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4487DY-T1-GE3 | Vishay Siliconix | $2.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4487dyt1ge3-datasheets-2217.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 15 Weeks | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.5W | 1 | 9 ns | 8ns | 10 ns | 28 ns | 8.2A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5W Ta 5W Tc | 0.0205Ohm | -30V | P-Channel | 1075pF @ 15V | 20.5m Ω @ 10A, 10V | 2.5V @ 250μA | 11.6A Tc | 36nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||
| SI8451DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si8451dbt2e1-datasheets-2412.pdf | 6-UFBGA | 6 | 80mOhm | yes | EAR99 | e3 | PURE MATTE TIN | BOTTOM | BALL | 260 | 8 | 30 | 2.77W | 1 | Other Transistors | Not Qualified | R-PBGA-B6 | 30ns | 30 ns | 45 ns | -10.8A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.77W Ta 13W Tc | 5A | 15A | -20V | P-Channel | 750pF @ 10V | 80m Ω @ 1A, 4.5V | 1V @ 250μA | 10.8A Tc | 24nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SIB455EDK-T1-GE3 | Vishay Siliconix | $4.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib455edkt1ge3-datasheets-2439.pdf | PowerPAK® SC-75-6L | 3 | 6 | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 6 | Single | NOT SPECIFIED | 13W | 1 | Other Transistors | Not Qualified | S-XDSO-N3 | 3.2 ns | 7.8A | 10V | SILICON | DRAIN | SWITCHING | 12V | 2.4W Ta 13W Tc | 9A | 25A | 0.027Ohm | -12V | P-Channel | 27m Ω @ 5.6A, 4.5V | 1V @ 250μA | 9A Tc | 30nC @ 8V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||
| SIA425EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia425edjt1ge3-datasheets-2443.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 6 | 6 | yes | EAR99 | unknown | DUAL | NO LEAD | 260 | 6 | 40 | 2.9W | 1 | Other Transistors | Not Qualified | 10 ns | 4.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 20V | 20V | 2.9W Ta 15.6W Tc | P-Channel | 60m Ω @ 4.2A, 4.5V | 1V @ 250μA | 4.5A Tc | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| SI7774DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7774dpt1ge3-datasheets-2402.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 5W Ta 48W Tc | N-Channel | 2630pF @ 15V | 3.8m Ω @ 15A, 10V | 2.2V @ 250μA | 60A Tc | 66nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIE832DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie832dft1e3-datasheets-6384.pdf | 10-PolarPAK® (S) | 4 | 12 Weeks | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PDSO-N4 | 45 ns | 260ns | 55 ns | 35 ns | 23.6A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 80A | 0.0055Ohm | 40V | N-Channel | 3800pF @ 20V | 5.5m Ω @ 14A, 10V | 3V @ 250μA | 50A Tc | 77nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI7621DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7621dnt1ge3-datasheets-2383.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 30 | 3.1W | 1 | Other Transistors | S-XDSO-C5 | 8 ns | 75ns | 60 ns | 25 ns | 4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 3.1W Ta 12.5W Tc | 4A | 0.09Ohm | P-Channel | 300pF @ 10V | 90m Ω @ 3.9A, 4.5V | 2V @ 250μA | 4A Tc | 6.2nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||
| IRF5806TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf5806trpbf-datasheets-1518.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.1mm | 1mm | 1.7mm | Lead Free | 18 Weeks | No SVHC | 86MOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | Single | 2W | 1 | Other Transistors | 6.2 ns | 27ns | 126 ns | 94 ns | -4A | 20V | -20V | -1.2V | 2W Ta | 4A | -20V | P-Channel | 594pF @ 15V | -1.2 V | 86m Ω @ 4A, 4.5V | 1.2V @ 250μA | 4A Ta | 11.4nC @ 4.5V | 2.5V 4.5V | ±20V | |||||||||||||||||||||||||||||||
| SI4484EY-T1-GE3 | Vishay Siliconix | $1.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4484eyt1e3-datasheets-8352.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | No SVHC | 8 | 1 | Single | 1.8W | 1 | 8-SO | 4.8A | 20V | 100V | 2V | 1.8W Ta | 34mOhm | 100V | N-Channel | 34mOhm @ 6.9A, 10V | 2V @ 250μA (Min) | 4.8A Ta | 30nC @ 10V | 34 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI8475EDB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8475edbt1e1-datasheets-2473.pdf | 4-XFBGA, CSPBGA | 4 | 13 Weeks | 4 | yes | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 30 | 1 | Other Transistors | 80 μs | 7.7A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 1.1W Ta 2.7W Tc | 25A | 0.051Ohm | 80 mJ | 20V | P-Channel | 32m Ω @ 1A, 4.5V | 1.5V @ 250μA | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SIA406DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sia406djt1ge3-datasheets-2428.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 13 Weeks | Unknown | 19.8mOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | FET General Purpose Power | S-XDSO-N3 | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | 1V | 3.5W Ta 19W Tc | 20A | N-Channel | 1380pF @ 6V | 19.8m Ω @ 10.8A, 4.5V | 1V @ 250μA | 4.5A Tc | 23nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||
| SI7462DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7462dpt1e3-datasheets-6195.pdf | PowerPAK® SO-8 | Lead Free | 5 | 130MOhm | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.9W | DUAL | C BEND | 260 | 8 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 15ns | 20 ns | 40 ns | 2.6A | 20V | DRAIN | SWITCHING | 12A | 1.8 mJ | 200V | N-Channel | 130m Ω @ 4.1A, 10V | 4V @ 250μA | 2.6A Ta | 30nC @ 10V | |||||||||||||||||||||||||||||||||
| SI5440DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5440dct1ge3-datasheets-2288.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 2.5W | 2 | 20 ns | 12ns | 10 ns | 20 ns | 6A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 6.3W Tc | 30V | N-Channel | 1200pF @ 10V | 19m Ω @ 9.1A, 10V | 2.5V @ 250μA | 6A Tc | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI1305DL-T1-GE3 | Vishay Siliconix | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1305dlt1e3-datasheets-7851.pdf | SC-70, SOT-323 | Lead Free | 3 | 3 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 3 | 30 | 290mW | 1 | Other Transistors | 8 ns | 55ns | 12 ns | 17 ns | 860mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | 8V | 290mW Ta | 0.86A | 0.28Ohm | P-Channel | 280m Ω @ 1A, 4.5V | 450mV @ 250μA (Min) | 860mA Ta | 4nC @ 4.5V | ||||||||||||||||||||||||||||||||||
| SI8445DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8445dbt2e1-datasheets-2406.pdf | 4-XFBGA, CSPBGA | 4 | 4 | yes | EAR99 | No | e3 | MATTE TIN | BOTTOM | BALL | 260 | 4 | Single | 40 | 1.8W | 1 | Other Transistors | 11 ns | 25ns | 10 ns | 37 ns | -9.8A | 5V | SILICON | SWITCHING | 20V | 1.8W Ta 11.4W Tc | 3.9A | -20V | P-Channel | 700pF @ 10V | 84m Ω @ 1A, 4.5V | 850mV @ 250μA | 9.8A Tc | 16nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||
| SI8467DB-T2-E1 | Vishay Siliconix | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8467dbt2e1-datasheets-2409.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 73MOhm | 4 | EAR99 | No | BOTTOM | BALL | Single | 1 | Other Transistors | 25 ns | 45ns | 20 ns | 50 ns | -3.7A | -1.5V | SILICON | SWITCHING | 20V | 20V | 780mW Ta 1.8W Tc | P-Channel | 475pF @ 10V | 73m Ω @ 1A, 4.5V | 1.5V @ 250μA | 21nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SI5853DDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5853ddct1e3-datasheets-2298.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 15 Weeks | 84.99187mg | 105mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 1.2W | 1 | 15 ns | 17ns | 17 ns | 21 ns | 2.9A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.3W Ta 3.1W Tc | P-Channel | 320pF @ 10V | 105m Ω @ 2.9A, 4.5V | 1V @ 250μA | 4A Tc | 12nC @ 8V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||
| SI5486DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5486dut1e3-datasheets-8521.pdf | 8-PowerVDFN | 3mm | 750μm | 1.9mm | Lead Free | 3 | Unknown | 15MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 8 | 1 | Single | 30 | 3.1W | 1 | FET General Purpose Powers | R-XDSO-N3 | 7 ns | 15ns | 10 ns | 55 ns | 12A | 8V | SILICON | DRAIN | SWITCHING | 1V | 3.1W Ta 31W Tc | 40A | 20V | N-Channel | 2100pF @ 10V | 15m Ω @ 7.7A, 4.5V | 1V @ 250μA | 12A Tc | 54nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||
| SI6443DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6443dqt1e3-datasheets-7408.pdf | 8-TSSOP (0.173, 4.40mm Width) | 157.991892mg | 8 | 1 | Single | 1 | 8-TSSOP | 7.3A | 20V | 30V | 1.05W Ta | 12mOhm | -30V | P-Channel | 12mOhm @ 8.8A, 10V | 3V @ 250μA | 7.3A Ta | 60nC @ 5V | 12 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI5456DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5456dut1ge3-datasheets-2334.pdf | 8-PowerVDFN | 3 | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 8 | 30 | 3.1W | 1 | R-XDSO-N3 | 20 ns | 15ns | 10 ns | 20 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.1W Ta 31W Tc | 50A | 0.01Ohm | 20V | N-Channel | 1200pF @ 10V | 10m Ω @ 9.3A, 10V | 2.5V @ 250μA | 12A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI7403BDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7403bdnt1e3-datasheets-6135.pdf | PowerPAK® 1212-8 | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 30 | 3.1W | 1 | Other Transistors | S-XDSO-C5 | 5 ns | 51ns | 60 ns | 33 ns | 5.1A | 8V | SILICON | DRAIN | SWITCHING | 3.1W Ta 9.6W Tc | 8A | 20A | 0.074Ohm | 20V | P-Channel | 430pF @ 10V | 74m Ω @ 5.1A, 4.5V | 1V @ 250μA | 8A Tc | 15nC @ 8V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||
| SI7703EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7703ednt1e3-datasheets-0864.pdf | PowerPAK® 1212-8 | 6 | No SVHC | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 40 | 1.3W | 1 | Other Transistors | S-XDSO-C6 | 4 ns | 6ns | 6 ns | 23 ns | -6.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | -1V | 1.3W Ta | 4.3A | 20A | 20V | P-Channel | 48m Ω @ 6.3A, 4.5V | 1V @ 800μA | 4.3A Ta | 18nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||
| SI5913DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5913dct1e3-datasheets-6447.pdf | 8-SMD, Flat Lead | 8 | 15 Weeks | 84.99187mg | 8 | yes | EAR99 | unknown | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | Other Transistors | Not Qualified | 18 ns | 40ns | 10 ns | 18 ns | 3.7A | 12V | SILICON | SWITCHING | 20V | 1.7W Ta 3.1W Tc | 4A | -20V | P-Channel | 330pF @ 10V | 84m Ω @ 3.7A, 10V | 1.5V @ 250μA | 4A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||
| SI7635DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7635dpt1ge3-datasheets-2361.pdf | PowerPAK® SO-8 | Lead Free | 5 | 506.605978mg | Unknown | 4.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | Other Transistors | R-PDSO-C5 | 19 ns | 10ns | 13 ns | 65 ns | -40A | 16V | SILICON | DRAIN | SWITCHING | 20V | -2.2V | 5W Ta 54W Tc | 70A | -20V | P-Channel | 4595pF @ 10V | -2.2 V | 4.9m Ω @ 26A, 10V | 2.2V @ 250μA | 40A Tc | 143nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||
| SI4470EY-T1-GE3 | Vishay Siliconix | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4470eyt1e3-datasheets-8331.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | No SVHC | 8 | No | 1 | Single | 1.85W | 1 | 8-SO | 16 ns | 12ns | 30 ns | 50 ns | 9A | 20V | 60V | 2V | 1.85W Ta | 11mOhm | 60V | N-Channel | 2 V | 11mOhm @ 12A, 10V | 2V @ 250μA (Min) | 9A Ta | 70nC @ 10V | 11 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI4409DY-T1-GE3 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4409dyt1e3-datasheets-6284.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 2.2W | 1 | 7 ns | 10ns | 10 ns | 13 ns | 900mA | 20V | SILICON | SWITCHING | 2.2W Ta 4.6W Tc | 150V | P-Channel | 332pF @ 50V | 1.2 Ω @ 500mA, 10V | 4V @ 250μA | 1.3A Tc | 12nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4472DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4472dyt1e3-datasheets-8391.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 3.1W | 1 | 16 ns | 12ns | 7 ns | 20 ns | 7.7A | 20V | SILICON | SWITCHING | 3.1W Ta 5.9W Tc | 0.047Ohm | 150V | N-Channel | 1735pF @ 50V | 4.5 V | 45m Ω @ 5A, 10V | 4.5V @ 250μA | 7.7A Tc | 43nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI4403BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4403bdyt1e3-datasheets-8348.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | EAR99 | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.35W | 1 | Not Qualified | 45ns | 70 ns | 150 ns | 7.3A | 8V | SILICON | -450mV | 1.35W Ta | 20V | P-Channel | 17m Ω @ 9.9A, 4.5V | 1V @ 350μA | 7.3A Ta | 50nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SI4654DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4654dyt1e3-datasheets-7077.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 30 ns | 10ns | 10 ns | 50 ns | 18.6A | 16V | SILICON | SWITCHING | 2.5W Ta 5.9W Tc | 0.004Ohm | 25V | N-Channel | 3770pF @ 15V | 4m Ω @ 15A, 10V | 2.5V @ 250μA | 28.6A Tc | 100nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
| SI4620DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4620dyt1e3-datasheets-8539.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2W | 1 | 16 ns | 36ns | 17 ns | 21 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta 3.1W Tc | 6A | 40A | 0.035Ohm | 30V | N-Channel | 1040pF @ 15V | 35m Ω @ 6A, 10V | 2.5V @ 250μA | 6A Ta 7.5A Tc | 13nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V |
