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IRF5806TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF5806TRPBF
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 5161
- Description: IRF5806TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 86MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 2W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 6.2 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 86m Ω @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 594pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 11.4nC @ 4.5V |
| Rise Time | 27ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 126 ns |
| Turn-Off Delay Time | 94 ns |
| Continuous Drain Current (ID) | -4A |
| Threshold Voltage | -1.2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain to Source Breakdown Voltage | -20V |
| Dual Supply Voltage | -20V |
| Nominal Vgs | -1.2 V |
| Height | 1mm |
| Length | 3.1mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF5806TRPBF Description
IRF5806TRPBF is a kind of P-channel HEXFET? power MOSFET provided by Infineon Technologies. It is able to provide extremely low on-resistance per silicon area based on advanced processing techniques. As a result, it is reliable and efficient for electronic engineers to use in battery and load management applications. Power MOSFET IRF5806TRPBF is available in the TSOP-6 package, making it ideally suited for applications where printed circuit board space is at a premium.
IRF5806TRPBF Features
Low gate charge
Extremely low on-resistance per silicon area
Advanced processing techniques
Available in the TSOP-6 package
Unique thermal design and RDS(on) reduction
IRF5806TRPBF Applications
Battery and load management
