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ContactSIB455EDK-T1-GE3
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 27m Ω @ 5.6A, 4.5V ±10V 30nC @ 8V 12V PowerPAK® SC-75-6L
- Manufacturer: Vishay Siliconix
- NO: 880-SIB455EDK-T1-GE3
- Package: PowerPAK® SC-75-6L
- Datasheet:
- Stock: 197
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 27m Ω @ 5.6A, 4.5V ±10V 30nC @ 8V 12V PowerPAK® SC-75-6L (Kg)
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| Parameters | |
|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| JESD-30 Code | S-XDSO-N3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.4W Ta 13W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 13W |
| Case Connection | DRAIN |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 27m Ω @ 5.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 8V |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 3.2 ns |
| Continuous Drain Current (ID) | 7.8A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain Current-Max (Abs) (ID) | 9A |
| Drain-source On Resistance-Max | 0.027Ohm |
| Drain to Source Breakdown Voltage | -12V |
| Pulsed Drain Current-Max (IDM) | 25A |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-75-6L |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2009 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
