IRF5804TRPBF

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 198mOhm @ 2.5A, 10V ±20V 680pF @ 25V 8.5nC @ 10V 40V SOT-23-6 Thin, TSOT-23-6


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF5804TRPBF
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 22045
  • Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 198mOhm @ 2.5A, 10V ±20V 680pF @ 25V 8.5nC @ 10V 40V SOT-23-6 Thin, TSOT-23-6 (Kg)

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  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package Micro6™(TSOP-6)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2W Ta
Power Dissipation 2W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 198mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) -2.5A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Dual Supply Voltage -40V
Input Capacitance 680pF
Drain to Source Resistance 334mOhm
Rds On Max 198 mΩ
Nominal Vgs -3 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.