Products
Manufacturer
RFQ
NEWS
ContactIRF1405ZSTRLPBF
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.9m Ω @ 75A, 10V ±20V 4780pF @ 25V 180nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: Infineon Technologies
- NO: 376-IRF1405ZSTRLPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 3048
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.9m Ω @ 75A, 10V ±20V 4780pF @ 25V 180nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 230W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 230W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.9m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4780pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Rise Time | 110ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 82 ns |
| Turn-Off Delay Time | 48 ns |
| Continuous Drain Current (ID) | 75A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0049Ohm |
| Drain to Source Breakdown Voltage | 55V |
| Pulsed Drain Current-Max (IDM) | 600A |
| Avalanche Energy Rating (Eas) | 420 mJ |
| Height | 4.826mm |
| Length | 10.668mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF1405ZSTRLPBF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 420 mJ.The maximum input capacitance of this device is 4780pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 48 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 600A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Its overall power consumption can be reduced by using drive voltage (10V).
IRF1405ZSTRLPBF Features
the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.
IRF1405ZSTRLPBF Applications
There are a lot of Infineon Technologies IRF1405ZSTRLPBF applications of single MOSFETs transistors.
- Load switching
- Power Management Functions
- Telecom 1 Sever Power Supplies
- LCD/LED TV
- DC/DC converters
- Micro Solar Inverter
- Synchronous Rectification
- Consumer Appliances
- AC-DC Power Supply
- Uninterruptible Power Supply
