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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Max Input Voltage | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Max Output Current | Max Output Voltage | Min Input Voltage | Min Output Voltage | Output Voltage | Output Current | Output Type | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Voltage - Output 1 | Current - Output 1 | Threshold Voltage | Power - Max | Power Dissipation-Max | Topology | Number of Inputs | Voltage - Output 2 | Current - Output 2 | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Frequency - Switching | Nominal Vgs | w/Sequencer | Voltage/Current - Output 1 | Voltage/Current - Output 2 | Multiplexer/Demultiplexer Circuit | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI2303BDS-T1-GE3 | Vishay Siliconix | $0.63 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2303bdst1e3-datasheets-8001.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 30 | 700mW | 1 | Other Transistors | 55 ns | 40ns | 40 ns | 10 ns | -1.49A | 20V | SILICON | -3V | 700mW Ta | 0.2Ohm | 30V | P-Channel | 180pF @ 15V | -3 V | 200m Ω @ 1.7A, 10V | 3V @ 250μA | 1.49A Ta | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC402ACD-T1-GE3 | Vishay Siliconix | $1.68 |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | Surface Mount | -40°C~85°C | Digi-Reel® | 3 (168 Hours) | 160μA | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic402bcdt1ge3-datasheets-6092.pdf | 32-PowerVFQFN | 5mm | 850μm | 5mm | 28V | 19 Weeks | No SVHC | 32 | EAR99 | 28V | 3V~28V | SIC402 | SWITCHING REGULATOR | 3.4W | 10A | 5.5V | 3V | 600mV | 5.5V | 10A | Adjustable | 2 | 5.5V | 10A | Step-Down (Buck) Synchronous (1), Linear (LDO) (1) | 750mV | 200mA | 200kHz~1MHz | No | 0.6V~5.5V 10A | Adj to 0.75V 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4684DY-T1-E3 | Vishay Siliconix | $10.53 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4684dyt1ge3-datasheets-6354.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1 | Single | 2.5W | 1 | 8-SO | 2.08nF | 12 ns | 12ns | 11 ns | 45 ns | 12A | 12V | 30V | 2.5W Ta 4.45W Tc | 9.4mOhm | N-Channel | 2080pF @ 15V | 9.4mOhm @ 16A, 10V | 1.5V @ 250μA | 16A Tc | 45nC @ 10V | 9.4 mΩ | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG540DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 3.5mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 20-DIP (0.300, 7.62mm) | 26.92mm | 3.81mm | 7.11mm | 15V | 500MHz | 6mA | 2.508989g | 18V | 10V | 60Ohm | 20 | No | RGB, T-Switch Configuration | Video | 470mW | DG540 | 4 | 470mW | 20-PDIP | 500MHz | SPST | 70 ns | 50 ns | 15V | Dual, Single | 10V | 4 | 4 | 60Ohm | 3V~15V ±3V~15V | 1:1 | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4862DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4862dyt1e3-datasheets-3887.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 32 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 42 ns | 38ns | 50 ns | 120 ns | 17A | 8V | SILICON | SWITCHING | 1.6W Ta | 0.0033Ohm | 16V | N-Channel | 3.3m Ω @ 25A, 4.5V | 600mV @ 250μA (Min) | 17A Ta | 70nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG542AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | 500MHz | 6mA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-DIP (0.300, 7.62mm) | 18V | 10V | 60Ohm | 16 | No | 3.5mA | RGB, T-Switch Configuration | Video | 900mW | 4 | 16-DIP Side Brazed | 500MHz | SPST | 100 ns | 60 ns | 15V | Dual, Single | 10V | 60Ohm | 60Ohm | 3V~15V ±3V~15V | 1:1 | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4831BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4831bdyt1ge3-datasheets-6455.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Single | 2W | 1 | 8-SO | 625pF | 24 ns | 5.1A | 20V | 30V | 2W Ta 3.3W Tc | 42mOhm | 30V | P-Channel | 625pF @ 15V | 42mOhm @ 5A, 10V | 3V @ 250μA | 6.6A Tc | 26nC @ 10V | Schottky Diode (Isolated) | 42 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ560EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj560ept1ge3-datasheets-1042.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 60V | 34W Tc | N and P-Channel | 1650pF @ 25V | 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V | 2.5V @ 250μA | 30A Tc 18A Tc | 30nC @ 10V, 45nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5479DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5479dut1ge3-datasheets-6496.pdf | PowerPAK® ChipFET™ Single | 21mOhm | Single | 3.1W | PowerPAK® ChipFet Single | 1.81nF | 77 ns | 16A | 8V | 12V | 3.1W Ta 17.8W Tc | 21mOhm | 12V | P-Channel | 1810pF @ 6V | 21mOhm @ 6.9A, 4.5V | 1V @ 250μA | 16A Tc | 51nC @ 8V | 21 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7923DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7923dnt1e3-datasheets-1593.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 47mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7923 | 8 | Dual | 40 | 1.3W | 2 | Other Transistors | S-XDSO-C6 | 10 ns | 12ns | 12 ns | 38 ns | -6.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -3V | 4.3A | -30V | 2 P-Channel (Dual) | 47m Ω @ 6.4A, 10V | 3V @ 250μA | 4.3A | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7100DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7100dnt1e3-datasheets-6067.pdf | PowerPAK® 1212-8 | 5 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | S-XDSO-C5 | 26.1A | 8V | SILICON | DRAIN | SWITCHING | 3.8W Ta 52W Tc | 60A | 0.0035Ohm | 8V | N-Channel | 3810pF @ 4V | 3.5m Ω @ 15A, 4.5V | 1V @ 250μA | 35A Tc | 105nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7956DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7956dpt1e3-datasheets-2416.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7956 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 13 ns | 36ns | 36 ns | 18 ns | 4.1A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.105Ohm | 150V | 2 N-Channel (Dual) | 105m Ω @ 4.1A, 10V | 4V @ 250μA | 2.6A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4836DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4836dyt1ge3-datasheets-6582.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | FET General Purpose Power | R-PDSO-G8 | 35 ns | 41ns | 41 ns | 190 ns | 17A | 8V | SILICON | SWITCHING | 1.6W Ta | 0.003Ohm | 12V | N-Channel | 3m Ω @ 25A, 4.5V | 400mV @ 250μA (Min) | 17A Ta | 75nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3900DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si3900dvt1e3-datasheets-4514.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 125mOhm | 6 | EAR99 | No | e3 | MATTE TIN | 830mW | GULL WING | 260 | SI3900 | 6 | 2 | Dual | 40 | 830mW | 2 | 10 ns | 30ns | 30 ns | 14 ns | 2A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 2A | 20V | 2 N-Channel (Dual) | 600 mV | 125m Ω @ 2.4A, 4.5V | 1.5V @ 250μA | 4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5461EDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5461edct1e3-datasheets-6485.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | 2.5 μs | 4.5μs | 15 μs | 27 μs | 4.5A | 12V | SILICON | 1.3W Ta | 0.045Ohm | 20V | P-Channel | 45m Ω @ 5A, 4.5V | 450mV @ 250μA (Min) | 4.5A Ta | 20nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4288DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4288dyt1ge3-datasheets-5505.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | e3 | MATTE TIN | 3.1W | GULL WING | 260 | 8 | Dual | 30 | 2W | 2 | 150°C | 7 ns | 8 ns | 16 ns | 7.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 40V | 2 N-Channel (Dual) | 580pF @ 20V | 20m Ω @ 10A, 10V | 2.5V @ 250μA | 9.2A | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7452DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7452dpt1ge3-datasheets-6619.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 8 | 506.605978mg | 8 | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Not Qualified | 45 ns | 15ns | 15 ns | 90 ns | 11.5A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60V | N-Channel | 8.3m Ω @ 19.3A, 10V | 4.5V @ 250μA | 11.5A Ta | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5515CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si5515cdct1e3-datasheets-6614.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 14 Weeks | 84.99187mg | No SVHC | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | C BEND | 260 | SI5515 | 8 | 2 | 30 | 1.3W | 2 | 10 ns | 32ns | 6 ns | 25 ns | 4A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 800mV | 4A | 0.036Ohm | 20V | N and P-Channel | 632pF @ 10V | 800 mV | 36m Ω @ 6A, 4.5V | 800mV @ 250μA | 4A Tc | 11.3nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7601DN-T1-E3 | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7601dnt1ge3-datasheets-0272.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 8 | 1 | Single | 3.8W | 1 | PowerPAK® 1212-8 | 1.87nF | 18 ns | 112ns | 80 ns | 53 ns | 11.5A | 12V | 20V | 3.8W Ta 52W Tc | 19mOhm | P-Channel | 1870pF @ 10V | 19.2mOhm @ 11A, 4.5V | 1.6V @ 250μA | 16A Tc | 27nC @ 5V | 19.2 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7904BDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7904bdnt1ge3-datasheets-7920.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 30MOhm | 8 | yes | EAR99 | Tin | No | e3 | 2.5W | C BEND | 260 | SI7904 | 8 | 2 | Dual | 40 | 2.5W | 2 | FET General Purpose Powers | S-XDSO-C6 | 5 ns | 15ns | 5 ns | 25 ns | 6A | 8V | SILICON | DRAIN | AMPLIFIER | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 17.8W | 6A | 20V | 2 N-Channel (Dual) | 860pF @ 10V | 30m Ω @ 7.1A, 4.5V | 1V @ 250μA | 24nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1422DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1422dht1ge3-datasheets-2026.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 7.512624mg | Unknown | 26mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.56W | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 20 ns | 4A | 8V | SILICON | SWITCHING | 1.56W Ta 2.8W Tc | 4A | 12V | N-Channel | 725pF @ 6V | 400 mV | 26m Ω @ 5.1A, 4.5V | 1V @ 250μA | 4A Tc | 20nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA907EDJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia907edjtt1ge3-datasheets-9247.pdf | PowerPAK® SC-70-6 Dual | Contains Lead | 6 | 28.009329mg | 57mOhm | 6 | EAR99 | No | 7.8W | 6 | Dual | 1.9W | 2 | Other Transistors | 5 ns | 10ns | 10 ns | 30 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | 57m Ω @ 3.6A, 4.5V | 1.4V @ 250μA | 4.5A Tc | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4409DY-T1-GE3 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4409dyt1e3-datasheets-6284.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 2.2W | 1 | 7 ns | 10ns | 10 ns | 13 ns | 900mA | 20V | SILICON | SWITCHING | 2.2W Ta 4.6W Tc | 150V | P-Channel | 332pF @ 50V | 1.2 Ω @ 500mA, 10V | 4V @ 250μA | 1.3A Tc | 12nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ980DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-siz980dtt1ge3-datasheets-0423.pdf | 8-PowerWDFN | 6 | 14 Weeks | EAR99 | unknown | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 20W 66W | 20A | 90A | 0.0067Ohm | 11.2 mJ | 2 N-Channel (Dual), Schottky | 930pF @ 15V 4600pF @ 15V | 6.7m Ω @ 15A, 10V, 1.6m Ω @ 19A, 10V | 2.2V @ 250μA | 20A Tc 60A Tc | 8.1nC @ 4.5V, 35nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5440DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5440dct1ge3-datasheets-2288.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 2.5W | 2 | 20 ns | 12ns | 10 ns | 20 ns | 6A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 6.3W Tc | 30V | N-Channel | 1200pF @ 10V | 19m Ω @ 9.1A, 10V | 2.5V @ 250μA | 6A Tc | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1016X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1016xt1ge3-datasheets-1326.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 700mOhm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | DUAL | FLAT | 260 | SI1016 | 6 | 40 | 250mW | 2 | Other Transistors | 485mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.485A | 20V | N and P-Channel | 700m Ω @ 600mA, 4.5V | 1V @ 250μA | 485mA 370mA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6467BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6467bdqt1e3-datasheets-6035.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.05W | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.05W | 1 | Other Transistors | 45 ns | 85ns | 85 ns | 220 ns | -8A | 8V | 12V | P-Channel | 12.5m Ω @ 8A, 4.5V | 850mV @ 450μA | 6.8A Ta | 70nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6954ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si6954adqt1e3-datasheets-6320.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 14 Weeks | 157.991892mg | Unknown | 8 | No | 830mW | SI6954 | 2 | Dual | 830mW | 2 | 8-TSSOP | 12 ns | 10ns | 10 ns | 23 ns | 3.4A | 20V | 30V | 1V | 830mW | 53mOhm | 2 N-Channel (Dual) | 53mOhm @ 3.4A, 10V | 1V @ 250μA (Min) | 3.1A | 16nC @ 10V | Logic Level Gate | 53 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1473DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1473dht1e3-datasheets-8072.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 7.512624mg | Unknown | 100MOhm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.5W | 1 | Other Transistors | 2.8A | 20V | SILICON | SWITCHING | 30V | 1.5W Ta 2.78W Tc | 2.7A | 8A | -30V | P-Channel | 365pF @ 15V | -1 V | 100m Ω @ 2A, 10V | 3V @ 250μA | 2.7A Tc | 6.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3987EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sq3987evt1ge3-datasheets-4406.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | unknown | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.67W | 3A | 0.185Ohm | 74 pF | 2 P-Channel (Dual) | 570pF @ 15V | 133m Ω @ 1.5A, 10V | 2.5V @ 250μA | 3A Tc | 12.2nC @ 10V | Standard |
