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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI5402BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5402bdct1e3-datasheets-8444.pdf | 8-SMD, Flat Lead | 8 | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 30 | 1.3W | 1 | FET General Purpose Powers | 10 ns | 10ns | 10 ns | 27 ns | 6.1A | 20V | SILICON | 1V | 1.3W Ta | 4.9A | 0.035Ohm | 30V | N-Channel | 35m Ω @ 4.9A, 10V | 3V @ 250μA | 4.9A Ta | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ348DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz348dtt1ge3-datasheets-0284.pdf | 8-PowerWDFN | 14 Weeks | 8-Power33 (3x3) | 30V | 3.7W Ta 16.7W Tc | 2 N-Channel (Dual) | 820pF @ 15V | 7.12mOhm @ 15A, 10V | 2.4V @ 250μA | 18A Ta 30A Tc | 18.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB455EDK-T1-GE3 | Vishay Siliconix | $4.31 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib455edkt1ge3-datasheets-2439.pdf | PowerPAK® SC-75-6L | 3 | 6 | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 6 | Single | NOT SPECIFIED | 13W | 1 | Other Transistors | Not Qualified | S-XDSO-N3 | 3.2 ns | 7.8A | 10V | SILICON | DRAIN | SWITCHING | 12V | 2.4W Ta 13W Tc | 9A | 25A | 0.027Ohm | -12V | P-Channel | 27m Ω @ 5.6A, 4.5V | 1V @ 250μA | 9A Tc | 30nC @ 8V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA778DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sia778djt1ge3-datasheets-3238.pdf | PowerPAK® SC-70-6 Dual | 6 | 18 Weeks | 6 | yes | EAR99 | No | 5W | 260 | SIA778 | 6 | 2 | 40 | 1.9W | 2 | FET General Purpose Powers | 1.5A | SILICON | DRAIN | SWITCHING | 12V 20V | METAL-OXIDE SEMICONDUCTOR | 6.5W 5W | 4.5A | 2 N-Channel (Dual) | 500pF @ 6V | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 4.5A 1.5A | 15nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR838DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir838dpt1ge3-datasheets-2564.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 40 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 11ns | 10 ns | 23 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.4W Ta 96W Tc | 60A | 0.033Ohm | 45 mJ | 150V | N-Channel | 2075pF @ 75V | 33m Ω @ 8.3A, 10V | 4V @ 250μA | 35A Tc | 50nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6562CDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6562cdqt1ge3-datasheets-4119.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.7W | DUAL | GULL WING | 260 | SI6562 | 8 | 2 | 30 | 2 | Other Transistors | 150°C | 30 ns | 25ns | 25 ns | 45 ns | 6.1A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 1.6W 1.7W | 6.7A | 20V | N and P-Channel | 850pF @ 10V | 22m Ω @ 5.7A, 4.5V | 1.5V @ 250μA | 6.7A 6.1A | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI7856ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7856adpt1e3-datasheets-3144.pdf | PowerPAK® SO-8 | Lead Free | 5 | 3.7mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 21 ns | 15ns | 15 ns | 100 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 30V | N-Channel | 3.7m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 55nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI4590DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4590dyt1ge3-datasheets-5123.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 183mOhm | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 8 | 30 | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 2.4W 3.4W | 5.6A | N and P-Channel | 360pF @ 50V | 57m Ω @ 2A, 10V | 2.5V @ 250μA | 3.4A 2.8A | 11.5nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9410BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si9410bdyt1e3-datasheets-0261.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 10 ns | 15ns | 11 ns | 30 ns | 8.1A | 20V | SILICON | 30V | 30V | 1V | 1.5W Ta | 6.2A | 0.024Ohm | N-Channel | 1 V | 24m Ω @ 8.1A, 10V | 3V @ 250μA | 6.2A Ta | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI1965DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1965dht1e3-datasheets-1509.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 390mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1965 | 6 | 2 | Dual | 30 | 740mW | 2 | Other Transistors | 12 ns | 27ns | 10 ns | 15 ns | 1.14A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 1.3A | -12V | 2 P-Channel (Dual) | 120pF @ 6V | -400 mV | 390m Ω @ 1A, 4.5V | 1V @ 250μA | 1.3A | 4.2nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SIR874DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir874dpt1ge3-datasheets-3233.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | 8 | yes | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | Not Qualified | R-PDSO-C5 | 14 ns | 12ns | 9 ns | 19 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 25V | 25V | 3.9W Ta 29.8W Tc | 50A | 0.0094Ohm | 20 mJ | N-Channel | 985pF @ 15V | 9.4m Ω @ 10A, 10V | 2.2V @ 250μA | 20A Tc | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI1967DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1967dht1e3-datasheets-1153.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 490MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1967 | 6 | Dual | 30 | 740mW | 2 | Other Transistors | 150°C | 2 ns | 27ns | 10 ns | 12 ns | -1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 1A | -20V | 2 P-Channel (Dual) | 110pF @ 10V | 490m Ω @ 910mA, 4.5V | 1V @ 250μA | 1.3A | 4nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SUD40N02-3M3P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud40n023m3pe3-datasheets-3276.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3.3mOhm | 3 | EAR99 | No | GULL WING | 4 | Single | 3.3W | 1 | FET General Purpose Power | R-PSSO-G2 | 40 ns | 30ns | 33 ns | 67 ns | 24.4A | 20V | SILICON | DRAIN | 3.3W Ta 79W Tc | 40A | 100A | 20V | N-Channel | 6520pF @ 10V | 3.3m Ω @ 20A, 10V | 3V @ 250μA | 24.4A Ta 40A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110P04-04L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110p0404le3-datasheets-0474.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | 4.2MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 3.75W | 1 | Other Transistors | R-PSSO-G2 | 25 ns | 30ns | 110 ns | 190 ns | 110A | 20V | SILICON | SWITCHING | 40V | 3.75W Ta 375W Tc | 240A | -40V | P-Channel | 11200pF @ 25V | 4.2m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 350nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-16P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0316pe3-datasheets-3289.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.437803g | 16mOhm | 1 | Single | 15A | 20V | 30V | 6.5W Ta 40.8W Tc | N-Channel | 1150pF @ 25V | 16m Ω @ 15A, 10V | 3V @ 250μA | 13nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4946BEY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4946beyt1e3-datasheets-5417.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 41MOhm | 8 | EAR99 | No | e3 | MATTE TIN | 3.7W | GULL WING | 260 | SI4946 | 8 | Dual | 30 | 2.4W | 2 | 10 ns | 12ns | 10 ns | 25 ns | 5.3A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 2.4V | 30A | 60V | 2 N-Channel (Dual) | 840pF @ 30V | 41m Ω @ 5.3A, 10V | 3V @ 250μA | 6.5A | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SUP40N10-30-GE3 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 | 3 | 3 | EAR99 | No | SINGLE | 3 | 1 | 11 ns | 12ns | 12 ns | 30 ns | 38.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 3.1W Ta 89W Tc | TO-220AB | 75A | 61 mJ | N-Channel | 2400pF @ 25V | 30m Ω @ 15A, 10V | 4V @ 250μA | 38.5A Tc | 60nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9926CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9926cdyt1e3-datasheets-1229.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 18mOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.1W | GULL WING | 260 | SI9926 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Powers | 150°C | 15 ns | 12ns | 10 ns | 35 ns | 8A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 8A | 20V | 2 N-Channel (Dual) | 1200pF @ 10V | 18m Ω @ 8.3A, 4.5V | 1.5V @ 250μA | 33nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SUM110N04-03-E3 | Vishay Siliconix | $2.25 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0403e3-datasheets-5402.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 437.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 170ns | 110 ns | 55 ns | 110A | 20V | 40V | SILICON | SWITCHING | 4V | 3.75W Ta 375W Tc | 60 ns | 440A | 0.0028Ohm | 40V | N-Channel | 8250pF @ 25V | 4 V | 2.8m Ω @ 30A, 10V | 4V @ 250μA | 110A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI2309CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2309cdst1ge3-datasheets-7356.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 345mOhm | 3 | EAR99 | No | 12A | e3 | Matte Tin (Sn) | 60V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.7W | 1 | Other Transistors | 40 ns | 35ns | 35 ns | 15 ns | 1.2A | 20V | SILICON | SWITCHING | -1V | 1W Ta 1.7W Tc | -60V | P-Channel | 210pF @ 30V | 345m Ω @ 1.25A, 10V | 3V @ 250μA | 1.6A Tc | 4.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-09P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud50n0309pge3-datasheets-3255.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 1.437803g | 9.5MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 7.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 15ns | 8 ns | 22 ns | 63A | 20V | SILICON | DRAIN | SWITCHING | 7.5W Ta 65.2W Tc | 50A | 50A | 30V | N-Channel | 2200pF @ 25V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 63A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI1469DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1469dht1e3-datasheets-7724.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 7.512624mg | Unknown | 80mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 5 ns | 20ns | 9 ns | 22 ns | 1.6A | 12V | SILICON | SWITCHING | 20V | -1.5V | 1.5W Ta 2.78W Tc | 3.2A | 8A | -20V | P-Channel | 470pF @ 10V | 80m Ω @ 2A, 10V | 1.5V @ 250μA | 2.7A Tc | 8.5nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| SI1405DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1405dlt1ge3-datasheets-6027.pdf | 6-TSSOP, SC-88, SOT-363 | 2.3876mm | 990.6μm | 1.3462mm | Lead Free | 125mOhm | 6 | No | Single | 568mW | SC-70-6 (SOT-363) | 8 ns | 36ns | 36 ns | 33 ns | 1.6A | 8V | 8V | 568mW Ta | 210mOhm | 8V | P-Channel | 125mOhm @ 1.8A, 4.5V | 450mV @ 250μA (Min) | 1.6A Ta | 7nC @ 4.5V | 54 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD210PBF | Vishay Siliconix | $1.21 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd210pbf-datasheets-0562.pdf | 200V | 600mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 4 | 8 Weeks | Unknown | 1.5Ohm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | 1 | Single | 1W | 1 | FET General Purpose Power | R-PDIP-T3 | 8.2 ns | 17ns | 17 ns | 14 ns | 600mA | 20V | SILICON | DRAIN | SWITCHING | 4V | 1W Ta | 0.6A | 200V | N-Channel | 140pF @ 25V | 1.5 Ω @ 360mA, 10V | 4V @ 250μA | 600mA Ta | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 3N163-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-3n1632-datasheets-9363.pdf | TO-206AF, TO-72-4 Metal Can | 4 | EAR99 | Lead, Tin | unknown | 8541.21.00.95 | BOTTOM | WIRE | 1 | Not Qualified | O-MBCY-W4 | 5 ns | 13ns | 25 ns | 50mA | 30V | SILICON | SINGLE | SUBSTRATE | 40V | 40V | 375mW Ta | 0.05A | 300Ohm | 0.7 pF | P-Channel | 3.5pF @ 15V | 250 Ω @ 100μA, 20V | 5V @ 10μA | 50mA Ta | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40P10-40L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40p1040lge3-datasheets-1274.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 12 Weeks | 1 | 136W | 175°C | TO-252AA | 11 ns | 78 ns | -38A | 20V | 100V | 136W Tc | 33mOhm | -100V | P-Channel | 5540pF @ 15V | 40mOhm @ 8.2A, 10V | 2.5V @ 250μA | 38A Tc | 144nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3N163-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-3n1632-datasheets-9363.pdf | TO-206AF, TO-72-4 Metal Can | Lead Free | Unknown | 250Ohm | 4 | Tin | No | 1 | Single | 375mW | TO-72 | 3.5pF | 5 ns | 13ns | 25 ns | -50mA | 30V | 40V | -2.5V | 375mW Ta | 250Ohm | -40V | P-Channel | 3.5pF @ 15V | -2.5 V | 250Ohm @ 100μA, 20V | 5V @ 10μA | 50mA Ta | 250 Ω | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD19N20-90-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud19n2090e3-datasheets-2162.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 90mOhm | 3 | yes | EAR99 | Tin | No | 19A | e3 | 200V | GULL WING | 260 | 4 | 1 | Single | 30 | 3W | 1 | FET General Purpose Powers | R-PSSO-G2 | 15 ns | 50ns | 60 ns | 30 ns | 19A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 3W Ta 136W Tc | 200V | N-Channel | 1800pF @ 25V | 4 V | 90m Ω @ 5A, 10V | 4V @ 250μA | 19A Tc | 51nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFPS38N60L | Vishay Siliconix | $75.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps38n60lpbf-datasheets-4956.pdf | TO-274AA | 15.6mm | 20.3mm | 5mm | 3 | No | 1 | Single | SUPER-247™ (TO-274AA) | 7.99nF | 44 ns | 130ns | 69 ns | 92 ns | 38A | 30V | 600V | 540W Tc | 150mOhm | 600V | N-Channel | 7990pF @ 25V | 150mOhm @ 23A, 10V | 5V @ 250μA | 38A Tc | 320nC @ 10V | 150 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7157DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7157dpt1ge3-datasheets-4683.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 6.25W | 1 | R-PDSO-C5 | 20 ns | 14ns | 55 ns | 220 ns | -60A | 12V | SILICON | DRAIN | SWITCHING | 20V | -1.4V | 6.25W Ta 104W Tc | 300A | -20V | P-Channel | 22000pF @ 10V | 1.6m Ω @ 25A, 10V | 1.4V @ 250μA | 60A Tc | 625nC @ 10V | 2.5V 10V | ±12V |
